Two measurement systems are developed for in-situ dielectric property measurement under high pressure in a wide-temperature range from 77K to 1273 K. The high-temperature system ranging from room temperature up to 127...Two measurement systems are developed for in-situ dielectric property measurement under high pressure in a wide-temperature range from 77K to 1273 K. The high-temperature system ranging from room temperature up to 1273K is equipped with a hexahedron anvils press, while the low-temperature system ranging from liquid nitrogen temperature to normal condition is equipped using the piston cylinder setup with a specially designed sample chamber. Using these configurations, the dielectric property measurement of ferroelectrie BaTiO3 and multiferroie Tm0.5Gd0.5MnO3 compounds are demonstrated, which proves the validity of the systems through the tuning of the polarization and phase transition boundary by high pressure. These two systems will be equally applicable to a wide variety of electronic and transport property measurements of insulators, semiconductors, as well as battery materials.展开更多
In this paper,Carbon-doped Zinc Oxide(C-ZnO)samples were prepared using the solid-state reaction method.The influence of carbon-doping on the structural and dielectric properties of ZnO samples was studied.The shift i...In this paper,Carbon-doped Zinc Oxide(C-ZnO)samples were prepared using the solid-state reaction method.The influence of carbon-doping on the structural and dielectric properties of ZnO samples was studied.The shift in the highest peak position(101)in XRD patterns of carbon-doped samples was observed.The Raman peak at 581 cm^(-1) in undoped ZnO was shifted and broadened in carbon-doped ZnO samples.The ZnO samples doped with carbon show higher values of dielectric constant(~2400 at 1 kHz)compared to pure ZnO(~9 at 1 kHz)which was due to increase in native point defects in the samples.The ac conductivity(σ_(ac))value of the carbon-doped sample was enhanced by 103 times for((ZnO)_(0.9) C_(0.1))sample.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2009CB623301
文摘Two measurement systems are developed for in-situ dielectric property measurement under high pressure in a wide-temperature range from 77K to 1273 K. The high-temperature system ranging from room temperature up to 1273K is equipped with a hexahedron anvils press, while the low-temperature system ranging from liquid nitrogen temperature to normal condition is equipped using the piston cylinder setup with a specially designed sample chamber. Using these configurations, the dielectric property measurement of ferroelectrie BaTiO3 and multiferroie Tm0.5Gd0.5MnO3 compounds are demonstrated, which proves the validity of the systems through the tuning of the polarization and phase transition boundary by high pressure. These two systems will be equally applicable to a wide variety of electronic and transport property measurements of insulators, semiconductors, as well as battery materials.
基金The author(MD.Parvez Ahmad)thanks the Department of Science&Technology(DST),Government of India,for the award of DST-FIST level-1(SR/FST/PS-1/2018/35)scheme to Department of Physics,KLEF.
文摘In this paper,Carbon-doped Zinc Oxide(C-ZnO)samples were prepared using the solid-state reaction method.The influence of carbon-doping on the structural and dielectric properties of ZnO samples was studied.The shift in the highest peak position(101)in XRD patterns of carbon-doped samples was observed.The Raman peak at 581 cm^(-1) in undoped ZnO was shifted and broadened in carbon-doped ZnO samples.The ZnO samples doped with carbon show higher values of dielectric constant(~2400 at 1 kHz)compared to pure ZnO(~9 at 1 kHz)which was due to increase in native point defects in the samples.The ac conductivity(σ_(ac))value of the carbon-doped sample was enhanced by 103 times for((ZnO)_(0.9) C_(0.1))sample.
