Hydrophobic Poplar Prepared via High Voltage Electric Field(HVEF)with Copper as Electrode Plate

In order to improve hydrophobic characteristics which will affect the service performance of fast-growing poplar due to growing bacteria in the humid environment.In this study,a simple method was proposed to treat poplar via the high voltage electric field(HVEF)with copper as the electrode plate.Scanning electron microscope(SEM),Fourier transforms infrared spectroscopy(FTIR),X-ray diffraction(XRD)and contact angle tester were adopted to evaluate the surface morphology,surface group of poplar,crystallinity and wettability under HVEF.It was found by SEM that a large number of copper particles were uniformly attached to the surface of poplar.In all three sections,the weight percentage of the Cu element was accounting for more than half.The diffraction peaks of copper-containing compounds appeared in the(XRD).FTIR analysis confirmed that the reaction between copper and poplar took place.The surface contact angle of three sections of poplar increased in the following order:cross section<radial section<tangential section(increased by 34°,45°and 53°,respectively).An environmentfriendly and efficient method of HVEF treating fast-growing wood with copper as the electrode plate can promote its outdoor application.

Corona with Streamers in Atmospheric Pressure Air in a Highly Inhomogeneous Electric Field

The paper presents research data on positive and negative coronas inatmospheric pressure air in a highly inhomogeneous electric field. Thedata show that irrespective of the polarity of pointed electrodes placed ina high electric field (200 kV/cm), this type of discharge develops via ballstreamers even if the gap voltage rises slowly (0.2 kV/ms). The start voltageof first positive streamers, compared to negative ones, is higher andthe amplitude and the frequency of their current pulses are much lower:about two times and more than two orders of magnitude, respectively.The higher frequency of current pulses from negative streamers provideshigher average currents and larger luminous areas of negative coronascompared to positive ones. Positive and negative cylindrical streamersfrom a pointed to a plane electrode are detected and successive dischargetransitions at both polarities are identified.

High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor

A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.

Structure Design and Properties of Three-Layer Particleboard Based on High Voltage Electrostatic Field(HVEF)

In this study,the effects of three different particle sizes of wood wastes(A=–8+12 mesh;B=–12+20 mesh;C=–20+30 mesh)and factory shavings(D)on the properties of particleboard were investigated.According to the test results,three-layer particleboard was designed.Particleboard face layers made with mixture of A,B,and C.The core layer made with D.The ratio of core layer to face layers is 50:50.Three-layer particleboard were fabricated with 12%urea-formaldehyde(UF)resins and three different high voltage electrostatic field intensities(0 kv,30 kv,60 kv).The internal bond(IB)strength,modulus of rupture(MOR),modulus of elasticity(MOE),thickness swelling(TS),and water absorption(WA)of particleboard were evaluated.The density distribution of the three-layer particleboard were examined by vertical density profiles(VDP),and the bonding mechanism and functional groups changes in the particles were analyzed by FTIR analysis.The results showed that HVEF treatment intensity play a remarkable role in properties of particleboard.The particleboard with higher electrostatic field intensities treatment has higher MOE,MOR,IB,and TS.Under HVEF treatment(60 kv),the MOR,modulus of MOE,and IB of three-layer particleboard were 23.61 N/mm^(2),2787.09 N/mm^(2),and 0.86 N/mm^(2),respectively.FTIR indicated that the surface activity of wood particles was increased electric field treatment.

Air breakdown induced by the microwave with two mutually orthogonal and heterophase electric field components

The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.

Noise performance in AlGaN/GaN HEMTs under high drain bias

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias.