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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors(HEMTs)
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作者 范隆 郝跃 +3 位作者 赵元富 张进城 高志远 李培咸 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第7期2912-2919,共8页
Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high elec... Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high electron mobility transistor (HEMT) to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results,consistent with the experimental results,indicate that thin AlGaN barrier layer,high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT;when the acceptor concentration induced is less than 10^14cm-3,the shifts in threshold voltage are not obvious;only when the acceptor concentration induced is higher than 10^16cm-3,will the shifts of threshold voltage remarkably increase;the increase of threshold voltage,resulting from radiation induced acceptor,mainly contributes to the degradation in drain saturation current of the current-voltage (Ⅰ-Ⅴ) characteristic,but has no effect on the transconductance in the saturation area. 展开更多
关键词 GaN-based high electron mobility transistor (hemt radiation ACCEPTOR DEFECTS
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High performance InAlN/GaN high electron mobility transistors for low voltage applications 被引量:2
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作者 Minhan Mi Meng Zhang +6 位作者 Sheng Wu Ling Yang Bin Hou Yuwei Zhou Lixin Guo Xiaohua Ma Yue Hao 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第5期469-472,共4页
A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduc... A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance.Highly scaled lateral dimension(1.2μm source-drain spacing)is to reduce access resistance.Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance(Ron)of 0.9Ω·mm.Small signal measurement shows an fT/fmax of 131 GHz/196 GHz.Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7%(Vds=6-10 V)power added efficiency(PAE)associated with 1.6-2.4 W/mm output power density at 8 GHz.These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field,but also are attractive for low voltage mobile compatible rf applications. 展开更多
关键词 InAlN/GaN high electron mobility transistor(hemt) low voltage
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Breakdown voltage analysis of Al_(0.25)Ga_(0.75)N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer 被引量:1
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作者 段宝兴 杨银堂 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第5期561-568,共8页
In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field p... In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. 展开更多
关键词 ALGAN/GAN high electron mobility transistors(hemts) two-dimensional electron gas(2DEG) electric field modulation
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Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate 被引量:1
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作者 Minglong Zhao Xiansheng Tang +7 位作者 Wenxue Huo Lili Han Zhen Deng Yang Jiang Wenxin Wang Hong Chen Chunhua Du Haiqiang Jia 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第4期512-515,共4页
We have successfully prepared GaN based high electron mobility transistors(HEMTs)on metallic substrates transferred from silicon substrates by electroplating technique.GaN HEMTs on Cu substrates are demonstrated to ba... We have successfully prepared GaN based high electron mobility transistors(HEMTs)on metallic substrates transferred from silicon substrates by electroplating technique.GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates.Furthermore,the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging,showing the promising potential for very high-power and high-temperature operation.This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity,high yield,and low production requirement. 展开更多
关键词 GaN high electron mobility transistor(hemt) electric CHARACTERISTICS ELECTROPLATING heat DISSIPATION
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Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers 被引量:1
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作者 罗俊 赵胜雷 +3 位作者 林志宇 张进成 马晓华 郝跃 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期121-124,共4页
A novel A1GaN/GaN high electron mobility transistor (HEMT) with double buried p-type layers (DBPLs) in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long ... A novel A1GaN/GaN high electron mobility transistor (HEMT) with double buried p-type layers (DBPLs) in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate-drain length of 8μm. 展开更多
关键词 AlGaN on is Enhancement of Breakdown Voltage in AlGaN/GaN high electron mobility Transistors Using Double Buried p-Type Layers hemt of in
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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors 被引量:1
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作者 罗俊 赵胜雷 +5 位作者 宓珉瀚 侯斌 杨晓蕾 张进成 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第11期460-463,共4页
Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors (HEMTs) quantitatively. For the non-recess... Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors (HEMTs) quantitatively. For the non-recessed HEMT, the trap state density decreases from 2.48 × 1013 cm-2.eV-1 at an energy of 0.29 eV to 2.79 × 1012 cm-2.eV-1 at ET = 0.33 eV. In contrast, the trap state density of 2.38 × 1013-1.10× 1014 cm-2.eV-1 is located at ET in a range of 0.30-0.33 eV for the recessed HEMT. Thus, lots of trap states with shallow energy levels are induced by the gate recess etching. The induced shallow trap states can be changed into deep trap states by 350 ℃ annealing process. As a result, there are two different types of trap sates, fast and slow, in the annealed HEMT. The parameters of the annealed HEMT are ET = 0.29-0.31 eV and DT = 8.16× 1012-5.58 × 1013 cm-2.eV-1 for the fast trap states, and ET = 0.37-0.45 eV and DT = 1.84×1013- 8.50 × 1013 cm-2.eV-1 for the slow trap states. The gate leakage currents are changed by the etching and following annealing process, and this change can be explained by the analysis of the trap states. 展开更多
关键词 AlGaN/GaN high-electron mobility transistors (hemts) ANNEALING reactive ion etching trapstates
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A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
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作者 马龙 黄应龙 +2 位作者 张杨 杨富华 王良臣 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第10期2422-2426,共5页
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a G... This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Alo.24Gao.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property. 展开更多
关键词 resonant tunnelling diode (RTD) beam epitaxy (MBE) bistability high electron mobility transistor (hemt molecular self-latching
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Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors
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作者 Shahzaib Anwar Sardar Muhammad Gulfam +3 位作者 Bilal Muhammad Syed Junaid Nawaz Khursheed Aurangzeb Mohammad Kaleem 《Computers, Materials & Continua》 SCIE EI 2021年第10期1021-1037,共17页
High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims ... High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT.The impact of variations in gate length,mole concentration,barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated.An increase in the gate length causes a decrease in the drain current and transconductance,while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium(Al).For Al mole fractions of 23%,25%,and 27%,within Al gallium nitride(AlGaN)barrier,the GaN HEMT devices provide a maximum drain current of 347,408 and 474 mA/μm and a transconductance of 19,20.2,21.5 mS/μm,respectively.Whereas,for Al mole fraction of 10%and 15%,within AlGaN buffer,these devices are observed to provide a drain current of 329 and 283 mA/μm,respectively.Furthermore,for a gate length of 2.4,3.4,and 4.4μm,the device is observed to exhibit a maximum drain current of 272,235,and 221 mA/μm and the transconductance of 16.2,14,and 12.3 mS/μm,respectively.It is established that a maximum drain current of 997 mA/μm can be achieved with an Al concentration of 23%,and the device exhibits a steady drain current with enhanced transconductance.These observations demonstrate tremendous potential for two-dimensional electron gas(2DEG)for securing of the normally-off mode operation.A suitable setting of gate length and other design parameters is critical in preserving the normally-off mode operation while also enhancing the critical performance parameters at the same time.Due to the normallyon depletion-mode nature of GaN HEMT,it is usually not considered as suitable for high power levels,frequencies,and temperature.In such settings,a negative bias is required to enter the blocking condition;however,in the before-mentioned normally-off devices,the negative bias can be avoided and the channel can be depleted without applying a negative bias. 展开更多
关键词 high electron mobility GAN hemt bipolar transistors gallium nitride HETEROJUNCTIONS MOS devices
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors
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作者 Hao Zou Lin-An Yang +1 位作者 Xiao-Hua Ma Yue Hao 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第4期166-172,共7页
The effects of various notch structures on direct current(DC) and radio frequency(RF) performances of AlGaN/GaN high electron mobility transistors(HEMTs) are analyzed.The AlGaN/GaN HEMTs,each with a 0.8-μm gate lengt... The effects of various notch structures on direct current(DC) and radio frequency(RF) performances of AlGaN/GaN high electron mobility transistors(HEMTs) are analyzed.The AlGaN/GaN HEMTs,each with a 0.8-μm gate length,50-μm gate width,and 3-μm source-drain distance in various notch structures at the AlGaN/GaN barrier layer,are manufactured to achieve the desired DC and RF characteristics.The maximum drain current(I_(ds,max)),pinch-off voltage(V_(th)),maximum transconductance(gm),gate voltage swing(GVS),subthreshold current,gate leakage current,pulsed I-V characteristics,breakdown voltage,cut-off frequency(f_(T)),and maximum oscillation frequency(f_(max)) are investigated.The results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing,a 42.2% improvement of breakdown voltage,and a 9% improvement of cut-off frequency compared with the conventional HEMT.The notch structure also has a good suppression of the current collapse. 展开更多
关键词 ALGAN/GAN high electron mobility transistors(hemts) barrier layer NOTCH
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Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor
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作者 齐海涛 冯震 +3 位作者 李亚丽 张雄文 商耀辉 郭维廉 《Transactions of Tianjin University》 EI CAS 2007年第4期282-285,共4页
The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconducto... The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography, metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process. 展开更多
关键词 resonant tunneling diode (RTD) high electron mobility transistor (hemt monolithic integration
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
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作者 罗俊 赵胜雷 +5 位作者 宓珉瀚 陈伟伟 侯斌 张进成 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第2期421-425,共5页
The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors(HEMTs) with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then satura... The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors(HEMTs) with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG= 3 μm. For the HEMT with L_G= 1 μm, breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G= 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage.A similar suppression of the impact ionization exists in the HEMTs with LG〉 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG= 3 μm^20 μm, and their breakdown voltages are in a range of 140 V–156 V. 展开更多
关键词 A1GaN/GaN high-electron-mobility transistors (hemts) breakdown voltage gate length
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一种抑制栅极正负向串扰的GaN HEMT无源驱动电路
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作者 王忠 秦世清 +1 位作者 王福学 边国辉 《半导体技术》 CAS 北大核心 2024年第5期483-491,共9页
GaN器件由于其更快的开关速度,比硅器件更容易发生严重的开关振荡,也更容易受到栅源电压振荡的影响。为了抑制GaN基半桥结构中的串扰,提出了一种抑制GaN高电子迁移率晶体管(HEMT)栅极正负向串扰的无源钳位驱动电路来抑制栅源电压振荡。... GaN器件由于其更快的开关速度,比硅器件更容易发生严重的开关振荡,也更容易受到栅源电压振荡的影响。为了抑制GaN基半桥结构中的串扰,提出了一种抑制GaN高电子迁移率晶体管(HEMT)栅极正负向串扰的无源钳位驱动电路来抑制栅源电压振荡。采用基本无源元件建立自举驱动回路,并增加三极管以构成从驱动电路到GaN HEMT的低阻抗米勒电流路径,抑制正负向串扰。在LTspice软件下进行电路模拟仿真,并搭建实验平台进行实测验证,结果表明栅源电压的最大正向串扰可降至1.2 V,最大负向串扰可降至1.6 V,漏源电流的正向和负向串扰均降至2 A以下,证明该电路对栅源电压以及漏源电流的振荡均有良好的抑制效果。 展开更多
关键词 GaN高电子迁移率晶体管(hemt) 驱动电路 串扰 桥式电路 电路振荡
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基于101.6 mm晶圆35 nm InP HEMT工艺的340 GHz低噪声放大器芯片研制
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作者 孙远 陈忠飞 +4 位作者 陆海燕 吴少兵 任春江 王维波 章军云 《固体电子学研究与进展》 CAS 2024年第5期379-383,共5页
实现了在101.6 mm InP晶圆上制备35 nm的增强型InP高电子迁移率晶体管。通过InAs复合沟道外延结构设计,使得室温二维电子气迁移率面密度乘积达到4.2×10^(16)/(V·s)。采用了铂钛铂金埋栅工艺技术,典型器件最大跨导达到2900 mS/... 实现了在101.6 mm InP晶圆上制备35 nm的增强型InP高电子迁移率晶体管。通过InAs复合沟道外延结构设计,使得室温二维电子气迁移率面密度乘积达到4.2×10^(16)/(V·s)。采用了铂钛铂金埋栅工艺技术,典型器件最大跨导达到2900 mS/mm,电流增益截止频率达到460 GHz,最高振荡频率为720 GHz。同时研制出340 GHz低噪声放大器芯片,在310~350 GHz内小信号增益22~27 dB,噪声系数在8 dB以下。建立了340 GHz InP低噪声放大器芯片技术平台,为太赫兹低噪声单片微波集成电路的发展奠定基础。 展开更多
关键词 磷化铟(InP) 高电子迁移率晶体管(hemt) 电子束直写 太赫兹 低噪声放大器
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一种改进的基于110 GHz在片S参数测试的HEMT器件寄生电阻提取方法
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作者 李织纯 吕渊婷 +1 位作者 张傲 高建军 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2024年第1期85-90,共6页
提出了一种改进的高电子迁移率晶体管寄生电阻提取方法,该方法利用了特殊偏置点(V_(gs)>V_(th),V_(ds)=0V)的等效电路模型,推导了寄生电阻的表达式,采用半分析法对寄生电阻进行了优化。1~110 GHz S参数实测结果和仿真的S参数一致,证... 提出了一种改进的高电子迁移率晶体管寄生电阻提取方法,该方法利用了特殊偏置点(V_(gs)>V_(th),V_(ds)=0V)的等效电路模型,推导了寄生电阻的表达式,采用半分析法对寄生电阻进行了优化。1~110 GHz S参数实测结果和仿真的S参数一致,证明该方法是有效的。 展开更多
关键词 InP高电子迁移率晶体管 等效电路模型 寄生电阻 器件建模
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基于InP HEMT的太赫兹分谐波混频器芯片设计
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作者 何锐聪 王亚冰 +1 位作者 何美林 胡志富 《半导体技术》 北大核心 2024年第2期151-157,共7页
基于70 nm InP高电子迁移率晶体管(HEMT)工艺,研制了一款175~205 GHz分谐波混频器太赫兹单片集成电路(TMIC)。使用三线耦合Marchand巴伦实现本振信号的平衡-不平衡转换。在射频端口设计了紧凑型耦合线结构的带通滤波器,实现对射频信号... 基于70 nm InP高电子迁移率晶体管(HEMT)工艺,研制了一款175~205 GHz分谐波混频器太赫兹单片集成电路(TMIC)。使用三线耦合Marchand巴伦实现本振信号的平衡-不平衡转换。在射频端口设计了紧凑型耦合线结构的带通滤波器,实现对射频信号低损耗带通传输的同时缩小了芯片尺寸。测试结果表明混频器在175~205 GHz频率范围内,单边带(SSB)变频损耗小于15 dB,典型值14 dB。混频器中频频带为DC~25 GHz,射频端口对本振二次谐波信号的隔离度大于20 dB。芯片尺寸为1.40 mm×0.97 mm,能够与相同工艺的功率放大器、低噪声放大器实现片上集成,从而满足太赫兹通信等不同领域的应用需求。 展开更多
关键词 INP 高电子迁移率晶体管(hemt) 太赫兹单片集成电路 分谐波混频器 带通滤波器 Marchand巴伦
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基于建模数据和最优化算法的GaN HEMT精确电热行为建模方法
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作者 肖龙 陈冬冬 《电源学报》 CSCD 北大核心 2024年第1期153-162,共10页
为了实现对氮化镓高电子迁移率晶体管GaN HEMT(gallium nitride high electron mobility transistor)高速开关带来的开通过压、误导通、开关振荡和EMI噪声等问题展开定量的仿真分析,提出了一种基于建模数据和最优化算法的门极增强型GaN ... 为了实现对氮化镓高电子迁移率晶体管GaN HEMT(gallium nitride high electron mobility transistor)高速开关带来的开通过压、误导通、开关振荡和EMI噪声等问题展开定量的仿真分析,提出了一种基于建模数据和最优化算法的门极增强型GaN HEMT电热行为模型建模方法。相比较于常规GaN HEMT行为模型,所提出的建模方法采用2个简单的建模公式实现了对GaN HEMT在第一和第三象限宽工作温度范围内的电热特性进行准确的建模。同时采用一个紧凑的建模公式实现对GaN HEMT非线性寄生电容的精确建模。此外,提出了一种遗传算法和Levenberg-Marquardt算法组合的优化算法,基于该优化算法和建模数据实现了对建模参数的快速提取,在较大程度上减小了建模时间和工作量。仿真表明,所提出的建模方法能够实现对不同公司多个型号的GaN HEMT器件展开精确的建模。最后通过吻合的动态仿真和实验数据验证了所提建模方法的正确性和有效性。 展开更多
关键词 氮化镓高电子迁移率晶体管 电热行为模型 最优化算法 参数提取
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用于GaN基HEMT栅极金属TiN的ICP刻蚀工艺
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作者 高阳 周燕萍 +3 位作者 王鹤鸣 左超 上村隆一郎 杨秉君 《微纳电子技术》 CAS 2024年第3期136-143,共8页
GaN基高电子迁移率晶体管(HEMT)在射频(RF)通信及新能源汽车领域有着巨大的应用潜力。TiN材料因其良好的热稳定性、化学稳定性及工艺兼容性,可用作GaN基HEMT的栅极材料。采用ULVAC公司生产的NE-550型电感耦合等离子体(ICP)刻蚀设备对Ti... GaN基高电子迁移率晶体管(HEMT)在射频(RF)通信及新能源汽车领域有着巨大的应用潜力。TiN材料因其良好的热稳定性、化学稳定性及工艺兼容性,可用作GaN基HEMT的栅极材料。采用ULVAC公司生产的NE-550型电感耦合等离子体(ICP)刻蚀设备对TiN材料进行了干法刻蚀工艺的研究。采用光刻胶作为刻蚀掩膜,Cl_(2)和BCl_(3)混合气体作为工艺气体,通过调整工艺参数,研究了ICP源功率、射频(RF)偏压功率、腔体压力、气体体积流量以及载台温度对TiN刻蚀速率和侧壁角度的影响。最后通过优化工艺参数,得到了TiN刻蚀速率为333 nm/min,底部平整且侧壁角度为81°的栅极结构。 展开更多
关键词 氮化镓(GaN) 高电子迁移率晶体管(hemt) 电感耦合等离子体(ICP)刻蚀 TIN Cl2和BCl3混合气体 栅极结构 新能源汽车
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P-GaN栅结构GaN基HEMT器件研究进展 被引量:1
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作者 朱彦旭 宋潇萌 +3 位作者 李建伟 谭张杨 李锜轩 李晋恒 《北京工业大学学报》 CAS CSCD 北大核心 2023年第8期926-936,共11页
增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型... 增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。 展开更多
关键词 氮化镓(GaN) P-GaN栅技术 高电子迁移率晶体管(high electron mobility transistor hemt) 增强型器件 结构优化 制备工艺优化
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基于AlGaN/GaN HEMT结构的ZnO纳米线感光栅极光电探测器
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作者 朱彦旭 李建伟 +4 位作者 李锜轩 宋潇萌 谭张杨 李晋恒 王晓冬 《北京工业大学学报》 CAS CSCD 北大核心 2023年第2期188-196,共9页
在传统的采用ZnO薄膜的AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)光电探测器件中,存在光吸收、光电转换效率低,光电流小等诸多局限.为改善上述问题,基于AlGaN/GaN HEMT结构,提出并成功制备了一种ZnO纳米线... 在传统的采用ZnO薄膜的AlGaN/GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)光电探测器件中,存在光吸收、光电转换效率低,光电流小等诸多局限.为改善上述问题,基于AlGaN/GaN HEMT结构,提出并成功制备了一种ZnO纳米线感光栅极光电探测器.实验中首先通过水热法将ZnO纳米线成功制备到Si衬底材料及AlGaN/GaN HEMT衬底材料上,并利用X射线衍射(X-ray diffraction,XRD)仪、扫描电子显微镜(scanning electron microscope,SEM)、光致发光(photo luminescence,PL)光谱仪等仪器进行了一系列测试.结果表明,生长在AlGaN/GaN HEMT衬底材料上的ZnO纳米线具有更低的缺陷密度、更好的结晶度和更优异的光电特性.然后,将ZnO纳米线成功集成到AlGaN/GaN HEMT器件的栅极上,制备出具有ZnO纳米线感光栅极的AlGaN/GaN HEMT紫外光电探测器.将实验中制备出的具有ZnO纳米线感光栅极的AlGaN/GaN HEMT器件与常规的AlGaN/GaN HEMT器件进行对比,发现具有ZnO纳米线的器件在紫外波段能达到1.15×104A/W的峰值响应度,相比常规结构的AlGaN/GaN HEMT,峰值响应度提升约2.85倍,并且制备的ZnO纳米线器件的响应时间和恢复时间缩短为τr=10 ms和τf=250 ms,提高了探测器的性能. 展开更多
关键词 水热法 紫外 ZNO纳米线 高电子迁移率晶体管(high electron mobility transistor hemt) 探测器 响应度
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热阻降低39.5%的4英寸金刚石基GaN HEMT工艺
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作者 廖龙忠 武毅畅 +2 位作者 周国 付兴中 张力江 《微纳电子技术》 CAS 北大核心 2023年第8期1326-1331,共6页
散热问题是制约GaN大功率器件应用的瓶颈,为解决这个问题,研究人员将注意力集中到金刚石上的GaN结构(金刚石基GaN)。研发了一种将4英寸(1英寸=2.54 cm)GaN高电子迁移率晶体管(HEMT)转移到金刚石上来提高散热效率的工艺技术。首先采用GaN... 散热问题是制约GaN大功率器件应用的瓶颈,为解决这个问题,研究人员将注意力集中到金刚石上的GaN结构(金刚石基GaN)。研发了一种将4英寸(1英寸=2.54 cm)GaN高电子迁移率晶体管(HEMT)转移到金刚石上来提高散热效率的工艺技术。首先采用GaN HEMT标准工艺制备GaN器件,然后将衬底进行剥离去除,接着将纳米级粘接层沉积到GaN和多晶金刚石的表面,最后通过4英寸晶圆级键合工艺,将去除衬底的GaN HEMT转移到金刚石上。测试结果显示,转移后的GaN HEMT的热阻较转移前热阻降低了39.5%,6.5 W总耗散功率下GaN HEMT的结温降低了33.77℃。而且,在48 V下对转移后的GaN HEMT进行了测试,结果表明,栅源电压1 V下漏极电流密度为0.93 A/mm,频率3.5 GHz下输出功率密度达到10.45 W/mm,功率附加效率(PAE)为51%,增益为13.9 dB。 展开更多
关键词 GAN 高电子迁移率晶体管(hemt) 大功率器件 金刚石 晶圆级键合
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