Rice with high K utilization efficiency

China is short of potassium resources, it only produces about 30 t of potash fertilizers per year. While China used about 650 t of potash fertilizer in 2000 by importing more than 95% of its potash fertilizers from Canada or Europe. So, using varieties with high K utilization efficiency was very important.

Designing high k dielectric films with LiPON-Al_(2)O_(3)hybrid structure by atomic layer deposition

A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency response.Here,atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the Li PON-Al_(2)O_(3) hybrid structure.The Li PON thin film is periodically stacked in the Al_(2)O_(3) matrix.This hybrid structure presents a frequency-dependent dielectric constant,of which k is significantly higher than the aluminum oxide matrix from 1 k Hz to 200 k Hz in frequency.The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field,which shows an additional polarization to the Al_(2)O_(3) matrix.This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.

MOS器件Hf基高k栅介质的研究综述

随着金属氧化物半导体(MOS)器件尺寸的持续缩小,HfO2因其介电常数(k)高、带隙大等特点,成为取代传统SiO2栅介质最有希望的候选材料.本文综述了Hf基高k栅介质薄膜的近年的研究进展.针对HfO2结晶温度低、在HfO2薄膜和Si衬底间易形成界面层导致漏电流大、界面态密度高、击穿电压低等问题,回顾了最近论文报道的两种策略,即掺杂改性和插入缓冲层.接着举例讨论了Hf基材料从二元到掺杂氧化物/复合物的演变、非Si衬底上淀积Hf基高k栅介质、Hf基高k栅介质的非传统MOS器件结构,为集成电路(IC)中MOS器件的长期发展提供一些思路.

U型高K介质膜槽栅垂直场板LDMOS

近年来,随着汽车电子和电源驱动的发展,集成度较高的LDMOS作为热门功率器件受到了关注,如何提高其击穿电压与降低其比导通电阻成为提高器件性能的关键。基于SOI LDMOS技术,文章提出了在被4μm的高K介质膜包围的SiO_(2)沟槽中引入垂直场板的新型结构。与传统沟槽LDMOS相比,垂直场板和高K介质膜充分地将电势线引导至沟槽中,提高了击穿电压。此外垂直场板与高K介质和漂移区形成的MIS金属-绝缘层-半导体电容结构能增加漂移区表面的电荷量,降低比导通电阻。通过二维仿真软件,在7.5μm深的沟槽中引入宽0.3μm、深6.8μm的垂直场板,实现了具有300 V的击穿电压和4.26 mΩ·cm^(2)的比导通电阻,以及21.14 MW·cm^(-2)的Baliga品质因数的LDMOS器件。

6 W@80 K空间同轴脉管制冷机设计与实验研究

针对某空间红外载荷需求,基于Sage平台搭建了同轴脉管制冷机整机模型,根据仿真结果对冷头结构参数进行了设计计算。在此基础上,利用实验方法探究了回热器填充方式、惯性管组合方式、充气压力、输入功率、冷头方向对制冷机性能的影响,并与仿真结果比较,两者吻合度较高。研制成功的脉管制冷机整机质量为3.5 kg,输入功率150 W时,无负荷制冷温度为39.74 K,可获得7.23 W@80 K的冷量,整机相对卡诺效率13.26%,在空间用同轴脉管制冷机中处于先进水平。

一次性条件下top-k高平均效用序列模式挖掘算法

针对传统序列模式挖掘(SPM)不考虑模式重复性且忽略各项的效用(单价或利润)与模式长度对用户兴趣度影响的问题,提出一次性条件下top-k高平均效用序列模式挖掘(TOUP)算法。TOUP算法主要包括两个核心步骤:平均效用计算和候选模式生成。首先,提出基于各项出现位置与项重复关系数组的CSP(Calculation Support of Pattern)算法计算模式支持度,从而实现模式平均效用的快速计算;其次,采用项集扩展和序列扩展生成候选模式,并提出了最大平均效用上界,基于该上界实现对候选模式的有效剪枝。在5个真实数据集和1个合成数据集上的实验结果表明,相较于TOUP-dfs和HAOP-ms算法,TOUP算法的候选模式数分别降低了38.5%~99.8%和0.9%~77.6%;运行时间分别降低了33.6%~97.1%和57.9%~97.2%。TOUP的算法性能更优,能更高效地挖掘用户感兴趣的模式。

High-k材料研究进展与存在的问题

随着集成电路的飞速发展,SiO2作为传统的栅介质将不能满足MOSFET器件高集成度的要求,需要一种新型High-k材料来代替传统的SiO2,这就要综合考虑以下几个方面问题:(1)介电常数和势垒高度;(2)热稳定性;(3)薄膜形态;(4)界面质量;(5)与Si基栅兼容;(6)工艺兼容性;(7)可靠性。本文综述了几类High-k栅介质材料的研究现状及存在的问题。目前任何一种有望替代SiO2的栅介质材料都不能完全满足上述几点要求。但是,科学工作者们已经发现了几种有希望的High-k候选材料。

TiO_2/Al_2O_3堆栈结构high-k薄膜的制备及性能

采用磁控溅射法制备了TiO_2/Al_2O_3堆栈结构高k栅介质薄膜,研究了不同后处理条件对等效氧化物厚度,界面电荷和界面扩散的影响。实验结果表明:400℃退火后,TiO_2已经结晶,退火可以降低漏电流密度和介电层中的电荷密度。同时,退火使Ti进一步向Al_2O3层扩散,形成TiO_2和Al_2O_3的混合层,Al_2O_3层过薄时不能有效阻挡TiO_2的扩散。

High-k材料MOS器件的PISCES-II模拟

High-k材料是指介电常数k高于SiO2的材料。使用high-k材料做栅绝缘层,是减小MOS器件栅绝缘层直接隧道击穿(DirectTunneling,DT)电流的有效方法。文章在二维器件模拟软件PISCES-II中添加了模拟以high-k材料为栅绝缘层的MOS器件模型,并对SiO2和high-k材料的MOS晶体管器件特性进行了模拟比较,成功地验证了所加high-k材料MOS器件模型的正确性。改进后的PISCES-II程序,可以方便地对以各种high-k材料为栅绝缘层的器件性能进行模拟。

A review of rare-earth oxide films as high k dielectrics in MOS devices——Commemorating the 100th anniversary of the birth of Academician Guangxian Xu

Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).

高速列车运行时车体传热系数K值研究

车体传热系数K值是轨道车辆热工性能的重要指标,是高速列车空调系统能耗的重要影响参数。文章主要采用数值计算的方式,研究了高速列车车体传热系数K值。通过计算高速列车中间车的静止车体传热系数K值及运行条件下的车体传热系数K值,分析了不同运行速度时高速列车中间车车体传热系数K值的变化规律。计算结果表明:列车运行速度越高,车体传热系数K值越大,但增加幅度越来越小。此外,文章还分析了车体传热系数K值的变化对整车空调系统能耗的影响:高速列车以时速380 km运行时,相对于静止状态,由车体传热系数K值增大引起的整车空调系统能耗增加值不大。在设计高速列车时,相对于车体传热系数K值,更应注重列车高速运行时车体气密性。虽然车体传热系数K值增大引起的整车空调系统能耗增加值不大,但通过车体传入车内的热量仍较大,高速列车车体传热系数K值仍需控制在合理的范围内。

基于K-medoids-NCA-SMOTE-BSVM融合模型的网络交易平台高质量数据资源识别研究

随着数据服务形态不断衍生,数据资源作为一种新兴生产要素,其交易流通需求呈现爆发式增长。如何从海量数据中识别高质量数据资源,挖掘要素价值,成为数据交易平台获取竞争优势以及提升要素配置效率的关键。本文旨在发现平台交易情境下高质量数据形成的关键因素,提出从大规模、异质数据资源中高效识别高质量数据的方法。首先,基于高质量数据形成过程,构建“固有品质-商品表征”二维识别指标体系;然后,提出K-medoids-NCA-SMOTE-BSVM融合模型,对高、中、低三类不同质量数据进行分类预测;最后,收集真实数据交易平台的API交易数据,开展实证研究。结果显示:相比SVM,WOA-SVM,PSO-SVM,MLP和CNN等方法,K-medoids-NCA-SMOTE-BSVM模型在预测准确率和训练时间方面,均有良好的性能表现。本文提出的识别指标及分类模型,为平台经济下数据质量判断与预测提供了依据,对产品视角下数据质量标准制定以及数据交易定价优化具有一定实践意义。

Geochemical Characteristics of Cenozoic Basaltic High-K Volcanic Rocks from Maguan Area, Eastern Tibet

The major element, trace element and Nd-Sr isotopic composition of Cenozoic basaltic volcanic rocks from the Maguan area, eastern Tibet, indicates that the volcanic rocks are enriched in alkalis, especially K (K-2O up to {3.81%}) and depleted in Ti (TiO-2={1.27%}-{2.00%}). These rocks may be classified as two groups, based on their Mg+# numbers: one may represent primary magma (Mg+# numbers from 68 to 69), and the other, the evolved magma (Mg+# numbers from 49 to 57). Their REE contents are very high (∑REE={155.06}-{239.04}μg/g). Their REE distribution patterns are of the right-inclined type, characterized by LREE enrichment [(La/Yb)-N={12.0}-{19.2}], no Ce anomaly (Ce/Ce+*={1.0}), and weak negative Eu anomaly (Eu/Eu+*={0.9}). The rocks are highly enriched in Rb, Sr and Ba ({59.5}-{93.8} μg/g, 732-999 μg/g, and 450-632 μg/g, respectively), high in U and Th ({1.59}-{2.31} μg/g and {4.73}-{8.16} μg/g, respectively), and high in Nb, Ta, Zr and Hf (70-118 μg/g, {3.72}-{5.93} μg/g, 215-381 μg/g, and {5.47}-{9.03} μg/g, respectively). In the primitive mantle-normalized incompatible element spidergram, Nb, Ta, Zr, Hf and P show positive anomalies, whereas Ba, Ti and Y show negative anomalies. The {{}+{87}Sr/+{86}Sr} ratios range from {0.704029} to {0.704761}; {{}+{143}Nd/+{144}Nd} from {0.512769} to {0.512949}; and εNd from {+2.6} to {+6.1}. These geochemical features might suggest that the potential source of the basaltic high-K volcanic rocks in the Maguan area is similar to the OIB-source mantle of Hawaii and Kergeulen volcanic rocks.

Petrogenesis of the Langdu High-K Calc-Alkaline Intrusions in Yunnan Province: Constraints from Geochemistry and Sr-Nd Isotopes

The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite porphyry. The K20 content of majority of these rocks is greater than 3%, and, in the K20-SiO2 diagram, all the samples fall into the high-K calc-alkaline to shoshonitic fields. They are enriched in light rare earth elements （LREEs） and depleted in heavy rare earth elements （HREEs; LaN/YbN = 14.3-21.2）, and show slightly negative Eu anomalies （6Eu = 0.77-1.00）. These rocks have high K, Rb, Sr, and Ba contents; moderate to high enrichment of compatible elements （Cr = 36.7-79.9 ppm, Co = 9.6-16.4 ppm, and MgO = 2.2%-3.4%）; low Nb, Ta, and Ti contents, and characteristic of low high field strength elements（HFSEs） versus incompatible elements ratios （Nb/Th = 0.75, Nb/La = 0.34） and incompatible elements ratios （Nb/U = 3.0 and Ce/Pb = 5.1, Ba/Rb = 12.0）. These rocks exhibit restricted Sr and Nd isotopic compositions, with （87Sr/S6Sr）i values ranging from 0.7044 to 0.7069 and ENd（t） values from -2.8 to -2.2. The Sr-Nd isotope systematic and specific trace element ratios suggest that Langdu high-K calc-alkaline intrusive rocks derived from a metasomatized mantle source. The unique geochemical feature of intrusive rocks can be modeled successfully using different members of a slightly enriched mantle, a slab-derived fluid, and terrigenous sediments. It can be inferred that the degree of partial melting and the presence of specific components are temporally related to the tectonic evolution of the Zhongdian island arc. Formation of these rocks can be explained by the various degrees of melting within an ascending region of the slightly enriched mantle, triggered by the subduction of the Garz^--Litang ocean, and an interaction between the slab-derived fluid and the terrigenous sediments.

Element Geochemistry and Petrogenesis of High-K Potassic Dike Rocks in Two Types of Gold Ore Fields in Northwest Jiaodong, Shandong, China

This paper deals with the high\|K, potassic dike rocks in two types of gold ore fields at Linglong and Dayigezhuang, Northwest Jiaodong. The rocks can be divided into three types, i.e., (1) lamprophyre, (2) andesite porphyrite, and (3) dacite porphyrite, based on their geological occurrence and space\|time relationship with gold mineralization. These rocks were the products of early, synchronous and late mineralization, respectively. Element geochemistry shows that variations in chemical composition of major oxides follow the general rules of magmatic fractional crystallization. The fractional crystallization of mineral phases of augite in the early stage (namely in the lamprophyre stage) and hornblende and plagioclase in the late stage (namely from the andesite\|porphyrite to dacite porphyrite stage) controlled the magma evolution. The rocks are enriched in alkali and have higher K\-2O and lower TiO\-2 contents, as well as strongly enriched in large ion lithophile elements such as Ba, Sr and Rb, and LREE but strongly depleted in transition elements such as Cr and Ni. Rb is depleted relative to Sr and Ba, and Rb/Sr ratios are low. Volatile constituents are abundant. These characteristics indicate that the initial magma originated from the metamorphic subduction ocean\|crust that had been intensively contaminated by crustal materials, and retrogressive metamorphism is characterized by low\|degree partial melting during back\|arc spreading. Varying degrees of partial melting and different emplacement environments may be the main causes for the evolution of the rocks and mineralization in different degrees in the two gold ore fields at Linglong and Dayigezhuang, Shandong.

Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.

Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.

Current Progress of Hf(Zr)-Based High-k Gate Dielectric Thin Films

With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.