Research on the Effect of High Power Microwave on Low Noise Amplifier and Limiter Based on the Injection Method

The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics

For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.

High-repetition-rate and high-power efficient picosecond thin-disk regenerative amplifier

We present an effective approach to realize a highly efficient,high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser diode.The amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump passes.The exceptional thermal management on the thin disk through high-quality bonding,efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61%and a near-diffraction-limit beam quality with an M2 factor of 1.06.To the best of our knowledge,this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative amplifiers.Furthermore,the amplifier operates at room temperature and exhibits exceptional stability,with root mean square stability of less than 0.33%.This study significantly represents advances in the field of laser amplification systems,particularly in terms of efficiency and average power.This advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

A 600W Broadband Doherty Power Amplifier with Improved Linearity for Wireless Communication System

An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.

High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.

Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC

By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

Evolution of modes in double-clad Raman fiber amplifier

Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.

0.2~2.0GHz100W超宽带GaN功率放大器

设计并实现了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的100 W超宽带功率放大器。基于SiC无源工艺设计了集成无源器件(IPD)输入预匹配电路芯片;设计了基于陶瓷基片的T型集成输出预匹配电路;基于建立的传输线变压器(TLT)的精确模型,设计了宽带阻抗变换器,在超宽频带内将50Ω的端口阻抗变换至约12.5Ω,再通过多节微带电路与预匹配后的GaN HEMT芯片实现阻抗匹配。最终,以较小的电路尺寸实现了功率放大器的超宽带性能指标。测试结果表明,功率放大器在0.2~2.0 GHz频带内,在漏极电压36 V、输入功率9 W、连续波的工作条件下,输出功率大于103 W,漏极效率大于50%,输入电压驻波比(VSWR)≤2.5。

基于谐波控制的Doherty功率放大器设计

功率放大器是无线通信里面重要的射频前端电路。为满足现代无线通信对功率放大器高效率的要求,首先基于谐波控制理论分析,设计了一种新型谐波控制电路,此新型谐波控制电路可对功率管产生的封装寄生参数进行补偿,也可对二次谐波、三次谐波进行谐波控制,提高了Doherty功率放大器效率。随后,针对传统Doherty功率放大器限制带宽的问题,提出了采用后匹配结构的方式设计Doherty功率放大器,提高了Doherty功率放大器的带宽。最后,采用Cree公司的CGH40010F GaN HEMT设计一款Doherty功率放大器并进行测试。在1.85~2.15 GHz工作频带内,Doherty功率放大器输出功率可达到44.3~44.8 dBm,增益为12~15 dB,输出漏极效率(DE)大于75%,6 dB回退效率大于60%。结果表明,提出的Doherty功率放大器在效率方面具有显著优势。

虚拟仿真技术在“通信电子线路”实验课程教学中应用

针对“通信电子线路”实验课程教学中操作复杂、数据测量困难和实验现象难以观察等缺点,引入虚拟仿真技术进行仿真实验。通过在谐振功率放大器实验教学过程中进行虚拟仿真,利用虚拟仿真仪器能方便地观测到电路的三种工作状态,精准测量参数,实用性强。实践证明,先进行仿真实验,在进入实验室完成硬件电路实验,能提高实验教学的质量和效率,提高学生对电路的理解和分析能力。

基于LUT的HPA数字基带预失真方法研究

该文深入研究了OFDM系统中基于查询表LUT方法的HPA数字预失真技术。针对传统LUT方法收敛速度非常慢的不足,有关文献提出了相应的改进措施。该文从误码率BER,功率谱密度PSD和算法收敛速度几个方面进行了算法性能的仿真比较分析,指出以上算法存在的不足,并提出了新的改进方法,仿真及分析结果表明了该文提出改进方法在性能上的优越性。

辅助光对高功率掺镱光纤激光放大器受激拉曼散射效应的抑制作用

提出一种利用辅助光调控高功率掺镱光纤放大器中增益分布,以控制信号光的受激拉曼散射(SRS)增益、提高SRS阈值的方法.基于数值模拟分析了辅助光的波长以及辅助光和信号光的功率比例对放大器SRS阈值的影响规律.计算结果显示,通过引入适当波长和功率的辅助光可以有效提升放大器的SRS阈值.

基于自适应扩展卡尔曼滤波与神经网络的HPA预失真算法

针对强记忆功放的非线性问题,提出一种基于自适应扩展卡尔曼滤波与神经网络的高功放(High power amplifier,HPA)预失真算法.采用实数固定延时神经网络(Real-valued focused time-delay neural network,RVFTDNN)对间接学习结构预失真系统中的预失真器和逆估计器进行建模,扩展卡尔曼滤波(Extended Kalman filter,EKF)算法训练神经网络,从理论上指出Levenberg-Marquardt(LM)算法是EKF算法的特殊情况,并用李亚普诺夫稳定性理论分析EKF算法的稳定收敛条件,推导出测量误差矩阵的自适应迭代公式.结果表明:自适应EKF算法的训练误差和泛化误差均比LM算法更低,预失真后的邻道功率比(Adjacent channel power ratio,ACPR)比LM算法改善了2 d B.

S波段GaAs超低噪声限幅低噪声放大器芯片的研制

本文将限幅器嵌入到了低噪声放大器的输入级匹配电路,使得整体限幅放大电路的噪声系数为低噪声放大器的最小噪声系数而不需再加上限幅器的损耗,从而有效降低了整体限幅低噪声放大器的噪声系数。在此基础上,设计并实现了一款S波段限幅低噪声放大器芯片,实现了超低噪声与高耐功率的性能。测试结果表明,该款芯片在目前相近频段所有限幅低噪声放大器产品中噪声系数最小。在2.7 GHz~3.5 GHz工作频带内,实测噪声系数NF≤0.85 dB,增益≥29 dB,带内增益平坦度≤±0.3 dB,静态工作电流≤25 mA,1 dB压缩点输出功率≥8 dBm。在耐功率50 W(250μs脉宽、25%占空比)下试验30 min后不烧毁,恢复到常温时,噪声几乎无变化。芯片尺寸为3450μm×1600μm×100μm。

一种基于神经网络的非线性卫星HPA预失真器

卫星通信中放大器使用的行波管(TWT)会引起信号的非线性畸变,对通信质量造成较大影响。为解决这种不利影响,在放大器前端采用非线性预失真,能较理想地消除放大器的非线性。由于神经网络能够对非线性函数进行较好地拟合,可以将其引入预失真器的设计。为简化神经网络中的LM算法,提出了一种采用LMS算法的系统模型,并建立新的自适应预失真器的结构模型,大大降低计算复杂度,有利于系统性能的提高。仿真表明,采用含有一个隐层(9个神经元)的神经网络模型来设计预失真器,能够达到较好的预校正效果。

基于微通道散热的板条激光放大器热仿真分析

众所周知,热效应是限制大功率高能量激光器发展的一大瓶颈,在高能激光产生的过程中伴随着大量的废热产生,影响高能量激光器的光束质量甚至会影响其正常工作。为了保证高能量激光器的稳定运作并研究其工作物质的散热过程中的热分布状态,本文建立了一种用于高能Zig Zag板条激光放大器的双端入水微通道散热模型,利用CFD模拟仿真软件在额定工况下对微通道与空腔热沉进行散热对比,还研究了模型的可变参量:通道高度、翅片厚度,以及水流量对于散热性能的影响。模拟研究发现本文提出的微通道热沉冷却效果优于全腔水冷效果,微通道热沉将晶体表面最高温差控制在4℃以内,表面温度也降低了32;同时在压降允许范围内优化通道参数能再将冷却效果提升10,实现增益介质分布式高效散热。

基于RBF神经网络的HPA自适应预失真算法

卫星通信中,高速数据传输系统要求使用频谱利用率高的高阶调制技术,但高阶调制对高功率放大器(HPA)的非线性非常敏感,会造成码间干扰和邻信道间干扰。提出一种基于RBF神经网络的自适应预失真算法,以实现HPA的线性化,同时推导了自适应算法的迭代公式。仿真结果表明,该算法能明显改善信号星座图,并能大大提高系统的误比特率性能。

基于简易实频技术的宽带高效率功率放大器设计

为了满足5G通信系统对功率放大器带宽和效率的要求,基于CGH40010F晶体管,采用简易实频技术,设计了一款工作在n77频段(3.3 GHz~4.2 GHz)的宽带高效率功率放大器。首先采用负载牵引的方法对各频点的基波最佳阻抗值以及二次谐波阻抗空间进行提取,选择简易实频技术设计宽带匹配网络,在其仿真性能良好的前提下,进行了加工测试。测试结果表明,该功率放大器在3.3 GHz~4.2 GHz频段内,漏极效率为58.1%~64.5%,增益为11.1 dB~12.9 dB,饱和输出功率为39.6 dBm~41.3 dBm。该功率放大器的性能良好,且带宽和效率具有一定的优势,可为后续宽带高效率功率放大器的设计提供参考。