The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These incl...The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These include monolithic integration of QWIPs with GaAs based electronic and optoelectronic devices,high frequency and high speed QWIPs and applications,multicolor and multispectral detectors,and p-type QWIPs.展开更多
This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetecto...This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.展开更多
High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed th...High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.展开更多
本文报道了一种能够实现高速、高灵敏度的 In P基谐振腔增强型 (RCE)光电探测器。它采用衬底入光方式 ,解决了在 In P衬底上外延生长的 In P/In Ga As P介质膜分布布拉格反射镜 (DBR)反射率低的问题 ,该探测器的吸收层厚度为 0 .2 μm,...本文报道了一种能够实现高速、高灵敏度的 In P基谐振腔增强型 (RCE)光电探测器。它采用衬底入光方式 ,解决了在 In P衬底上外延生长的 In P/In Ga As P介质膜分布布拉格反射镜 (DBR)反射率低的问题 ,该探测器的吸收层厚度为 0 .2 μm,在波长 1.5 83μm处获得了 80 %的峰值量子效率。同时为了降低探测器的固有电容 ,利用质子注入技术使得器件的部分电极绝缘 。展开更多
文摘The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These include monolithic integration of QWIPs with GaAs based electronic and optoelectronic devices,high frequency and high speed QWIPs and applications,multicolor and multispectral detectors,and p-type QWIPs.
基金Project supported by the Preeminence Youth Fund of China(No.61625504)
文摘This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.
基金supported by the National Natural Science Foundation of China(Nos.61176053,61274069)the National Key Basic Research and Development Program of China(No.2012CB933503)the National High Technology Research and Development Program of China(Nos.2012AA012202,2013AA031401)
文摘High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.
文摘本文报道了一种能够实现高速、高灵敏度的 In P基谐振腔增强型 (RCE)光电探测器。它采用衬底入光方式 ,解决了在 In P衬底上外延生长的 In P/In Ga As P介质膜分布布拉格反射镜 (DBR)反射率低的问题 ,该探测器的吸收层厚度为 0 .2 μm,在波长 1.5 83μm处获得了 80 %的峰值量子效率。同时为了降低探测器的固有电容 ,利用质子注入技术使得器件的部分电极绝缘 。
