Ultrafast dynamics of femtosecond laser-induced high spatial frequency periodic structures on silicon surfaces

Femtosecond laser-induced periodic surface structures(LIPSS)have been extensively studied over the past few decades.In particular,the period and groove width of high-spatial-frequency LIPSS(HSFL)is much smaller than the diffraction limit,making it a useful method for efficient nanomanufacturing.However,compared with the low-spatial-frequency LIPSS(LSFL),the structure size of the HSFL is smaller,and it is more easily submerged.Therefore,the formation mechanism of HSFL is complex and has always been a research hotspot in this field.In this study,regular LSFL with a period of 760 nm was fabricated in advance on a silicon surface with two-beam interference using an 800 nm,50 fs femtosecond laser.The ultrafast dynamics of HSFL formation on the silicon surface of prefabricated LSFL under single femtosecond laser pulse irradiation were observed and analyzed for the first time using collinear pump-probe imaging method.In general,the evolution of the surface structure undergoes five sequential stages:the LSFL begins to split,becomes uniform HSFL,degenerates into an irregular LSFL,undergoes secondary splitting into a weakly uniform HSFL,and evolves into an irregular LSFL or is submerged.The results indicate that the local enhancement of the submerged nanocavity,or the nanoplasma,in the prefabricated LSFL ridge led to the splitting of the LSFL,and the thermodynamic effect drove the homogenization of the splitting LSFL,which evolved into HSFL.

Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.

Electronic Structures and Alloying Behaviors of Ferrite Phases in High Co-Ni Secondary Hardened Martensitic Steels

The electronic structure of ferrite (tempered martensite phase) in high Co-Ni secondary hardened martensitic steel has been investigated. The local density of states (LOOS) of alloying elements in the steel displays the relationship between solid solubility and the shape of the LDOS. The bond order integral (BOI) between atoms in the steel shows that the directional bonding of the p orbital of Si or C leads to the brittleness of the steel. At last, ΣBOI between atoms demonstrate that C, Co, Mn, Cr, Mo, Si strengthen the alloyed steel through solid-solution effects.

RECALESCENCE BEHAVIOUR AND SOLIDIFICATION STRUCTURE OF HIGHLY UNDERCOOLED Ni-32.5%Sn EUTECTIC ALLOY

Large undercoolings up to 395K (0.28TE) are obtained for 15g samples of Ni-32.5%Sn eutectic alloy by superheating the alloy melt to 108-700K above its eutectic temperature and consequently destroying most of the inherent heterogeneous nuclei. The recalcscence phenomenon and its dependence on undercooling and on crystal nuclcation and growth, as well as its relationship to solidification microstructures are studied. The crystalli/ation fraction during recalcsccnce is also calculated. Experiments reveal that recalcscence degree increases with undercooling when the latter is below a certain critical value∧Te, but it decreases as undercooling increases above A 7'( (under present conditions∧Te= 245K, i. c. 0.17TE). The greater the recalescencc degree, the larger the proportion of anomalous eutectic in solidified structures. It is inferred that anomalous eutectic is the product of rapid solidification while lamellar eutectic forms at much slower nuclcation rate and growth velocity.

Theoretical design of diamondlike superhard structures at high pressure

Diamond, as the hardest known material, has been widely used in industrial applications as abrasives, coatings, and cutting and polishing tools, but it is restricted by several shortcomings, e.g., its low thermal and chemical stability. Considerable efforts have been devoted to designing or synthesizing the diamond-like B-C-N-O compounds, which exhibit excellent mechanical property. In this paper, we review the recent theoretical design of diamond-like superhard structures at high pressure. In particular, the recently designed high symmetric phase of low-energy cubic BC3 meets the experimental observation, and clarifies the actual existence of cubic symmetric phase for the compounds formed by B-C-N-O system,besides the classical example of cubic boron nitride.

Optical and Structural Properties of In_(0.52)Al_(0.48)As/InP Structures Grown at Very High Arsenic Overpressures by Molecular Beam Epitaxy

Growth of ln0.52Al0.48As epitaxial layers on lnP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressures (V/III flux ratios from 30 to 300) has been carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) shows a strong and prominent dependence of the PL and XRD linewidths on the V/III flux ratio. Under our growth conditions, both the PL and XRD linewidths exhibit a minimum point at a V/III flux ratio of 150 which corresponds to a maximum in the PL intensity and XRD intensity ratio. Flux ratios exceeding 150 result in an increase in both the PL and XRD linewidths corresponding to a reduction in their associated intensities. Room temperature Raman scattering measurements show a narrowing in the lnAs-like and AlAs-like longitudinal-optic (LO)phonon linewidths which broaden at high flux ratios, while the LO phonon frequencies exhibit a gradual reduction as the flux ratio is increased. PL spectra taken at increasing temperatures show a quenching of the main emission peak followed by the evolution of a broad lower energy emission which is possibly associated with deep lying centres. This effect is more prominent in samples grown at lower V/III flux ratios. Hall effect measurements show a gradual reduction in the mobility in correspondence to an increase in the electron concentration as the flux ratio is increased.

DUCTILE CRACK INITIATION AND STEADY-STATE PROPAGATION OF HIGH STRENGTH STRUCTURAL STEEL

The resistance to crack propagation at earlier stage for a high strength structural steel with certain ductility and its correlation to microstructures,stress states,deformation history and strain characteristics have been investigated.The resistance to crack propagation is mainly de- termined by the plastic constrain ahead of the crack tip,the elastic energy and plastic work absorbed in the stress-strain field.These are connected with the state function of triaxial stress.The deformation history and strain characteristic during deformation of material are described by the flow line in which the deformation history and strain characteristic restrain the crack initiation at stage Ⅱ and the crack propagation at stage Ⅲ.The strain hardening rate may sensitively reflect the stress distribution and micro-fracture mechanism in the interi- or of material.

Highly integrated sulfur cathodes with strong sulfur/high-strength binder interactions enabling durable high-loading lithium-sulfur batteries

The development of high-sulfur-loading Li-S batteries is a key prerequisite for their commercial applications.This requires to surmount the huge polarization,severe polysulfide shuttling and drastic volume change caused by electrode thickening.High-strength polar binders are ideal for constructing robust and long-life high-loading sulfur cathodes but show very weak interfacial interaction with non-polar sulfur materials.To address this issue,this work devises a highly integrated sulfur@polydopamine/highstrength binder composite cathodes,targeting long-lasting and high-sulfur-loading Li-S batteries.The super-adhesion polydopamine(PD)can form a uniform nano-coating over the graphene/sulfur(G-S)surface and provide strong affinity to the cross-linked polyacrylamide(c-PAM)binder,thus tightly integrating sulfur with the binder network and greatly boosting the overall mechanical strength/conductivity of the electrode.Moreover,the PD coating and c-PAM binder rich in polar groups can form two effective blockades against the effusion of soluble polysulfides.As such,the 4.5 mg cm−2 sulfur-loaded G-S@PD-c-PAM cathode achieves a capacity of 480 mAh g−1 after 300 cycles at 1 C,while maintaining a capacity of 396 mAh g−1 after 50 cycles at 0.2 C when the sulfur loading rises to 9.1 mg cm−2.This work provides a system-wide concept for constructing high-loading sulfur cathodes through integrated structural design.

Effect of Morphology for Novel Bainite/Martensite Dual-Phase High Strength Steel on Its Hydrogen Embrittlement Susceptibility

With TEM、SEM, various high temperature deformed structures in W9Mo3Cr4V steel were investigated. The sub structures,recrystallized nuclei, as well as the dynamic precipitation were also studied and analyzed. The relationship between recrystallized structures and dynamic precipitation was discussed. The results showed that the deformed structures in W9Mo3Cr4V steel are more complicated than those in low alloy steels. Because W9Mo3Cr4V steel is a high speed steel, there are a large number of residual carbides on the matrix. Also, much dynamic precipitating carbides will precipitate during deformation at high temperature.

Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs：A new candidate of host material of diluted magnetic semiconductors

The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized.Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.

Design of Novel Compact Electromagnetic Bandgap Structures with Enhanced Bandwidth

Two kinds of compact electromagnetic band gap （EBG） structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Because of its significantly enlarged equivalent inductor and capacitance, the period of the lattice is approximately 4.5% of the free space wavelength. By insetting several narrow slits in the ground plane, the bandwidth of the main bandgap is enhanced by nearly 19%. Further effort has been made for designing a three layer compact EBG structure. Simulation results show that its period is reduced by about 26% compared to that of proposed two layer EBG structure, and the bandwidth of the main bandgap is about 3 times as that of the proposed two layer EBG structure. The detailed designs including a two layer compact 3×7 EBG array with and without defect ground plane and the three layer EBG array are given and simulation results are presented.

STRUCTURE PARAMETERS DESIGN AND PERFORMANCE TEST OF FUEL INJECTION SYSTEM

Based on the numerical simulation analysis, structure parameters of the high pressure fuel pump and common rail as well as flow limiter are designed and the GD-1 high pressure common rail fuel injection system is self-developed. Fuel injection characteristics experiment is performed on the GD-1 system. And double-factor variance analysis is applied to investigate the influence of the rail pressure and injection pulse width on the consistency of fuel injection quantity, thus to test whether the design of structure parameters is sound accordingly. The results of experiment and test show that rail pressure and injection pulse width as well as their mutual-effect have no influence on the injection quantity consistency, which proves that the structure parameters design is successful and performance of GD-1 system is sound.

Hot Spot in Materials with Structural Defects under High Shear Loading Rates

The response of three-dimensional sample of Al, containing vacancy complex, under shear loading was simulated. The molecular dynamics method was used and interaction between atoms was described on the base of pseudopotential theory Solitary waves were generated in the sample under mechanical loading. Their interaction with the vacancy complexes was shown to be able to initiate hot spot in that local region of the complexes. Some parameters of the hot spot as well as solitary waves were calculated. The initiation of the hot spot is accompanied with sufficient local structural relaxation.

Design of MEMS C-Band Microstrip Antenna Array Based on High-Resistance Silicon for Intelligent Ammunition

In recent years, microstrip antennas have been more widely applied in satellite communications, mobile phones, unmanned aerial vehicle （UAV）, and weapons. A micro-electro-mechanical systems-based （MEMS-based） high-resistance silicon C-band microstrip antenna array has been designed for the intelligent ammunition. The center frequency is 4.5 GHz. A cavity has been designed in substrate to reduce the dielectric constant of silicon and high-resistance silicon has been used as the material of substrate to improve the gain of antenna. It is very easy to be manufactured by using MEMS technology because of the improved structure of the antenna. The results show that the gain of the antenna is 8 dB and voltage standing wave ratio （VSWR） is less than 2 by the analysis and simulation in high freauencv structure simulator （HFSS）.

Relationship between the Vitória-Ecoporanga Dyke Swarm and the Vitória Structural High,Brazil

In Espírito Santo State,Brazil,between the municipalities of Vitória,Colatina and Ecoporanga,there is a mountainous region characterized by a shear zone which trends NNW-SSE and is filled by a diabase

LaB6 Work Function and Structural Stability under High Pressure

The work functions of the （110） and （10（3） surfaces of LaB6 are determined from ambient pressure to 39.1 GPa. The work function of the （110） surface slowly decreases but that of the （100） surface remains at a relatively constant value. To determine the reason for this difference, the electron density distribution （EDD） is determined from high-pressure single-crystal x-ray diffraction data by the maximum entropy method. The EDD results show that the chemical bond properties in LaB6 play a key role also investigated by single-crystal x-ray diffraction. In observed from ambient pressure to 39.1 GPa. The structural stability of LaB6 under high pressure is this study, no structural or electronic phase transition is

Structural Phase Transitions of ZnTe under High Pressure Using Experiments and Calculations

The pressure-induced structural transitions of ZnTe are investigated at pressures up to 59.2 GPa in a diamond anvil cell by using synchrotron powder x-ray diffraction method. A phase transition from the initial zinc blende （ZB, ZnTe-Ⅰ） structure to a cinnabar phase （ZnTe-Ⅱ） is observed at 9.6 GPa, followed by a high pressure orthorhombic phase （ZnTe-Ⅲ） with Cmcm symmetry at 12.1 GPa. The ZB, cinnabar （space group P3121）, Cmcm, P31 and rock salt structures of ZnTe are investigated by using density functional theory calculations. Based on the experiments and calculations, the ZnTe-Ⅱ phase is determined to have a cinnabar structure rather than a P3 1 symmetry.

Producing ultra-high-speed nitrogen jets by arc heating in a low-pressure chamber

Pure nitrogen gas was heated with direct current arc, at input powers from several hundred Watt to over 5 kW, and then injected through a nozzle into a chamber at 1 or 10 Pa pressure, with the purpose of accelerating the gas to very high speed around 7 km/s. Various structures of the arc generator and gas expansion nozzle were examined. Results show that bypass exhausting of the boundary layer before it enters the nozzle divergent section can greatly increase flow speed of the jet, thus it might be possible to use nitrogen as a working gas in high speed gas dynamic test facilities.

High Resolution Electron Microscopy Observations of Structural Changes in Iron Nitride Films Annealed in Vacuum

Iron-nitride films were prepared by reactive sputtering, and the effect of annealing treatment on the structures was investigated by means of in-situ electron microscopy and high resolution electron microscopy (HREM). As-deposited films were observed to be a mixed structure of a few ultrafine epsilon-Fe2-3N particles existing in the amorphous matrix. it was found that the structure-relaxation in the amorphous occurred at 473 K, and the ultrafine grains began to grow at the higher annealing temperatures. The transition of the amorphous to epsilon-Fe2-3N was almost completed at 673 K. It is considered that the formation of the ideal epsilon-Fe3N is originated from the ordering of the nitrogen atoms during the annealing in vacuum. On the other hand, gamma'-phase (Fe4N) was seen to precipitation of epsilon-phase at 723 K. Two possible modes are proposed in the precipitation of gamma'-phase, depending on the heating rate and crystallographic orientation relationships, i.e. [121](epsilon)//[001](gamma), (2(1) over bar0$)(epsilon)//(110)(gamma) and [100](epsilon)//[110](gamma), (001)(epsilon)//(111)(gamma). In addition, alpha-Fe particles were observed to form from the gamma'-phase at high temperatures. We assumed that these structural changes are due to the diffusion of nitrogen and iron atoms during the annealing, except for the case of the precipitation of the gamma'-phase as depicted above. The results obtained in this work are in a good agreement with the assumption.

Prismatic and full-waveform joint inversion

Prismatic wave is that it has three of which is located at the reflection interface reflection paths and two reflection points, one and the other is located at the steep dip angle reflection layer, so that contains a lot of the high and steep reflection interface information that primary cannot reach. Prismatic wave field information can be separated by applying Born approximation to traditional reverse time migration profile, and then the prismatic wave is used to update velocity to improve the inversion efficiency for the salt dame flanks and some other high and steep structure. Under the guidance of this idea, a prismatic waveform inversion method is proposed （abbreviated as PWI）. PWI has a significant drawback that an iteration time of PWI is more than twice as that of FWI, meanwhile, the full wave field information cannot all be used, for this problem, we propose a joint inversion method to combine prismatic waveform inversion with full waveform inversion. In this method, FWI and PWI are applied alternately to invert the velocity. Model tests suggest that the joint inversion method is less dependence on the high and steep structure information in the initial model and improve high inversion efficiency and accuracy for the model with steep dip angle structure.