High Temperature Characteristics of 3C-SiC/SiHeterojunctionDiodes Grown by LPCVD

The high temperature (300 ～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabr icated by low-pressure chemical vapor deposition on Si (100) substrates are inv estigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage char acteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data meas ured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.

High temperature characteristics of AlGaN/GaN high electron mobility transistors

Direct current （DC） and pulsed measurements are performed to determine the degradation mechanisms of A1GaN/GaN high electron mobility transistors （HEMTs） under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas （2DEG）. The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

In this paper,high temperature direct current（DC） performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V（far from Dirac point）,the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of ＋8 V（near Dirac point）.The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.

Characteristics of High Temperature Rupture of a Cast Ni-Based Superalloy M963

The rupture behavior of a cast Ni-base superalloy M963 at high temperature has been investi- gated. The microstructure examination shows that there exists a large amount of the carbide and γ-γ' eutectic, which is very harmful to the mechanical properties of M963 superalloy. The tensile strength of M963 superalloy both at room temperature and at high temperatures is higher than that of K17G alloy, but the tensile ductility of the former is much lower than that of the latter. In tensile fracture process with the high strain rate, the open carbides are the initiation site and the carbide/matrix interface is the propagation path of cracks. But in fracture process with the low strain rate, the carbide/matrix interface and cast microvoids are the initiation sites, and the carbide/matrix interface is the propagation path of cracks. The effective ways to improve ductility of M963 superalloy are also suggested.

Martensite Aging Effect and Thermal Cyclic Characteristics in Ti-Pd and Ti-Pd-Ni High Temperature Shape Memory Alloys

The effect of thermal cycling and aging in martensitic state in Ti-Pd-Ni alloys were investigated by DSC and TEM observations. It is shown that the thermal cycling causes the decreases in M, and Af temperatures in Ti50Pd50-xNix (x=10, 20, 30) alloys, but no obvious thermal cycling effect was observed in Ti50Pd50Pd40Ni10 alloys and the aging effect shows a curious feature, i.e., the Af temperature does not saturate even after relatively long time aging, which is considered to be due to the occurrence of recovery recrystallization during aging.

SOICMOS Integrated Circuit of Laser Range Finding Working at High Temperatures

Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer pro- cessing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed, which can be applied in laser range finding. By manufacturing this device, further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.

Physical and mechanical properties of sandstone containing a single fissure after exposure to high temperatures

In order to investigate the physical and mechanical properties of sandstone containing fissures after exposure to high temperatures,fissures with different angles α were prefabricated in the plate sandstone samples,and the processed samples were then heated at 5 different temperatures.Indoor uniaxial compression was conducted to analyze the change rules of physical properties of sandstone after exposure to high temperature,and the deformation,strength and failure characteristics of sandstone containing fissures.The results show that,with increasing temperature,the volume of sandstone increases gradually while the quality and density decrease gradually,and the color of sandstone remains basically unchanged while the brightness increases markedly when the temperature is higher than 585 ℃;the peak strength of sandstone containing fissures first decreases then increases when the temperature is between 25℃and 400℃.The peak strain of sandstone containing fissures increases gradually while the average modulus decreases gradually with increasing temperature,and the mechanical properties of sandstone show obvious deterioration after 400 ℃.The peak strain of sandstone containing fissures increases gradually while the average modulus decreases gradually with increasing temperature;with increasing angle αof the fissure,the evolution characteristics of the macro-mechanical parameters of sandstone are closely related to the their own mechanical properties.When the temperature is 800 ℃,the correlation between the peak strength and average modulus of sandstone and the angle α of the fissure is obviously weakened.The failure modes of sandstone containing fissures after high temperature exposure are of three different kinds including:tensile crack failure,tensile and shear cracks mixed failure,and shear crack failure.Tensile and shear crack mixed failure occur mainly at low temperatures and small angles;tensile crack failure occurs at high temperatures and large angles.

High-temperature energy storage dielectric with inhibition of carrier injection/migration based on band structure regulation

Dielectric capacitors have a high power density,and are widely used in military and civilian life.The main problem lies in the serious deterioration of dielectric insulation performance at high temperatures.In this study,a polycarbonate(PC)-based energy storage dielectric was designed with BN/SiO_(2)heterojunctions on its surface.Based on this structural design,a synergistic suppression of the carrier injection and transport was achieved,significantly improving the insulating properties of the polymer film.In particular,the composite film achieves optimal high-temperature energy-storage properties.The composite film can withstand an electric field intensity of 760 MV m^(-1)at 100℃and obtain an energy storage density of 8.32 J cm^(-3),while achieving a breakthrough energy storage performance even at 150℃(610 MV m^(-1),5.22 J cm^(-3)).Through adjustment of the heterojunction structure,free adjustment of the insulation performance of the material can be realized;this is of great significance for the optimization of the material properties.