Facilitating prelithiation of silicon carbon anode by localized high-concentration electrolyte for high-rate and long-cycle lithium storage

The commercialization of silicon-based anodes is affected by their low initial Coulombic efficiency(ICE)and capacity decay,which are attributed to the formation of an unstable solid electrolyte interface(SEI)layer.Herein,a feasible and cost-effective prelithiation method under a localized highconcentration electrolyte system(LHCE)for the silicon-silica/graphite(Si-SiO_(2)/C@G)anode is designed for stabilizing the SEI layer and enhancing the ICE.The thin SiO_(2)/C layers with-NH_(2) groups covered on nano-Si surfaces are demonstrated to be beneficial to the prelithiation process by density functional theory calculations and electrochemical performance.The SEI formed under LHCE is proven to be rich in ionic conductivity,inorganic substances,and flexible organic products.Thus,faster Li+transportation across the SEI further enhances the prelithiation effect and the rate performance of Si-SiO_(2)/C@G anodes.LHCE also leads to uniform decomposition and high stability of the SEI with abundant organic components.As a result,the prepared anode shows a high reversible specific capacity of 937.5 mAh g^(-1)after 400 cycles at a current density of 1 C.NCM 811‖Li-SSGLHCE full cell achieves a high-capacity retention of 126.15 mAh g^(-1)at 1 C over 750 cycles with 84.82%ICE,indicating the great value of this strategy for Si-based anodes in large-scale applications.

Defect Engineering with Rational Dopants Modulation for High‑Temperature Energy Harvesting in Lead‑Free Piezoceramics

High temperature piezoelectric energy harvester(HTPEH)is an important solution to replace chemical battery to achieve independent power supply of HT wireless sensors.However,simultaneously excellent performances,including high figure of merit(FOM),insulation resistivity(ρ)and depolarization temperature(Td)are indispensable but hard to achieve in lead-free piezoceramics,especially operating at 250°C has not been reported before.Herein,well-balanced performances are achieved in BiFeO3–BaTiO3 ceramics via innovative defect engineering with respect to delicate manganese doping.Due to the synergistic effect of enhancing electrostrictive coefficient by polarization configuration optimization,regulating iron ion oxidation state by high valence manganese ion and stabilizing domain orientation by defect dipole,comprehensive excellent electrical performances(Td=340°C,ρ250°C>10^(7)Ωcm and FOM_(250°C)=4905×10^(–15)m^(2)N^(−1))are realized at the solid solubility limit of manganese ions.The HT-PEHs assembled using the rationally designed piezoceramic can allow for fast charging of commercial electrolytic capacitor at 250°C with high energy conversion efficiency(η=11.43%).These characteristics demonstrate that defect engineering tailored BF-BT can satisfy high-end HT-PEHs requirements,paving a new way in developing selfpowered wireless sensors working in HT environments.

Advanced Nonflammable Localized High-Concentration Electrolyte For High Energy Density Lithium Battery

The key to realize long-life high energy density lithium batteries is to exploit functional electrolytes capable of stabilizing both high voltage cathode and lithium anode.The emergence of localized high-concentration electrolytes(LHCEs)shows great promise for ameliorating the above-mentioned interfacial issues.In this work,a lithium difluoro(oxalate)borate(LiDFOB)based nonflammable dual-anion LHCE is designed and prepared.Dissolving in the mixture of trimethyl phosphate(TMP)/1,1,2,2-tetrafluoroethyl-2,2,3,3-tetrafluoropropylether(D_(2)),the continuously consumption of LiDFOB is suppressed by simply introducing lithium nitrate(LiNO_(3)).Meantime,as most of the TMP molecular are coordinated with Li^(+),the electrolyte does not show incompatibility issue between neither metal lithium nor graphite anode.Therefore,it demonstrates excellent capability in stabilizing the interface of Ni-rich cathode and regulating lithium deposition morphology.The Li||LiNi_(0.87)Co_(0.08)Mn_(0.05)O_(2)(NCM87)batteries exhibit high capacity retention of more than 90%after 200 cycles even under the high cutoff voltage of 4.5 V,1 C rate.This study offers a prospective method to develop safe electrolytes suitable for high voltage applications,thus providing higher energy densities.

Mechanism of high-concentration electrolyte inhibiting the destructive effect of Mn(Ⅱ)on the performance of lithium-ion batteries

By optimizing electrolyte formulation to inhibit the deposition of transition metal ions(TMIs) on the surface of the graphite anode is an effective way to improve the electrochemical performance of lithium-ion batteries.At present,it is generally believed the formation of an effective interfacial film on the surface of the anode electrode is the leading factor in reducing the dissolution of TMIs and prevent TMIs from being embedded in the electrode.It ignores the influence of the solvation structures in the electrolyte system with different composition,and is not conducive to the design of the electrolyte formulation from the perspective of changing the concentration and the preferred solvent to inhibit the degradation of battery performance caused by TMIs deposition.In this work,by analyzing the special solvation structures of the high-concentra tion electrolyte,we study the main reason why high-concentration electrolyte inhibits the destructive effect of Mn(Ⅱ) on the electrochemical performance of LIBs.By combining the potentialresolved in-situ electrochemical impedance spectroscopy technology(PRIs-EIS) and density functional theory(DFT) calculation,we find that Mn(Ⅱ) mainly exists in the form of contact ions pairs(CIPs) and aggregates(AGGs) in high-concentration electrolyte.These solvation structures can reduce the destructive effect of Mn(Ⅱ) on battery performance from two aspects:on the one hand,it can rise the lowest unoccupied orbital(LUMO) value of the solvation structures of Mn(Ⅱ),thereby reducing the chance of its reduction;on the other hand,the decrease of Mn2+ions reduction can reduce the deposition of metallic manganese in the solid electrolyte interphase(SEI),thereby avoiding the continuous growth of the SEI.This study can be provided inspiration for the design of electrolytes to inhibit the destructive effect of TMls on LIBs.

Regulating solid electrolyte interphases on phosphorus/carbon anodes via localized high-concentration electrolytes for potassium-ion batteries

The resourceful and inexpensive red phosphorus has emerged as a promising anode material of potassium-ion batteries(PIBs) for its large theoretical capacities and low redox potentials in the multielectron alloying/dealloying reactions,yet chronically suffering from the huge volume expansion/shrinkage with a sluggish reaction kinetics and an unsatisfactory interfacial stability against volatile electrolytes.Herein,we systematically developed a series of localized high-concentration electrolytes(LHCE) through diluting high-concentration ether electrolytes with a non-solvating fluorinated ether to regulate the formation/evolution of solid electrolyte interphases(SEI) on phosphorus/carbon(P/C) anodes for PIBs.Benefitting from the improved mechanical strength and structural stability of a robust/uniform SEI thin layer derived from a composition-optimized LHCE featured with a unique solvation structure and a superior K+migration capability,the P/C anode with noticeable pseudocapacitive behaviors could achieve a large reversible capacity of 760 mA h g^(-1)at 100 mA g^(-1),a remarkable capacity retention rate of 92.6% over 200 cycles at 800 mA g^(-1),and an exceptional rate capability of 334 mA h g^(-1)at8000 mA g^(-1).Critically,a suppressed reduction of ether solvents with a preferential decomposition of potassium salts in anion-derived interfacial reactions on P/C anode for LHCE could enable a rational construction of an outer organic-rich and inner inorganic-dominant SEI thin film with remarkable mechanical strength/flexibility to buffer huge volume variations and abundant K+diffusion channels to accelerate reaction kinetics.Additionally,the highly reversible/durable full PIBs coupling P/C anodes with annealed organic cathodes further verified an excellent practical applicability of LHCE.This encouraging work on electrolytes regulating SEI formation/evolution would advance the development of P/C anodes for high-performance PIBs.

Structural optimization and performance trade-off strategies for semi-crystalline sulfonated poly(arylene ether ketone) membranes in high-concentration direct methanol fuel cells

Direct methanol fuel cells(DMFCs) have attracted extensive attention as promising next-generation energy conversion devices. However, commercialized proton exchange membranes(PEMs) hardly fulfill the demand of methanol tolerance for DMFCs employing high-concentration methanol solutions.Herein, we report a series of semi-crystalline poly(arylene ether ketone) PEMs with ultra-densely sulfonic-acid-functionalized pendants linked by flexible alkyl chains, namely, SL-SPEK-x(where x represents the molar ratio of the novel monomer containing multiple phenyl side chain to the bisfluoride monomers). The delicate structural design rendered SL-SPEK-x membranes with high crystallinity and well-defined nanoscale phase separation between hydrophilic and hydrophobic phases. The reinforcement from poly(ether ketone) crystals enabled membranes with inhibited dimensional variation and methanol penetration. Furthermore, microphase separation significantly enhanced proton conductivity. The SL-SPEK-12.5 membrane achieved the optimum trade-off between proton conductivity(0.182 S cm^(-1), 80 ℃), water swelling(13.6%, 80 ℃), and methanol permeability(1.6 × 10^(-7)cm~2 s^(-1)). The DMFC assembled by the SL-SPEK-12.5 membrane operated smoothly with a 10 M methanol solution, outputting a maximum power density of 158.3 mW cm^(-2), nearly twice that of Nafion 117(94.2 mW cm^(-2)). Overall, the novel structural optimization strategy provides the possibility of PEMs surviving in high-concentration methanol solutions, thus facilitating the miniaturization and portability of DMFC devices.

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.

Regulating the dopant clustering in LiZnAs-based diluted magnetic semiconductor

Tuning of the magnetic interaction plays the vital role in reducing the clustering of magnetic dopant in diluted magnetic semiconductors(DMS).Due to the not well understood magnetic mechanism and the interplay between different magnetic mechanisms,no efficient and universal tuning strategy is proposed at present.Here,the magnetic interactions and formation energies of isovalent-doped(Mn) and aliovalent(Cr)-doped LiZnAs are studied based on density functional theory(DFT).It is found that the dopant–dopant distance-dependent magnetic interaction is highly sensitive to the carrier concentration and carrier type and can only be explained by the interplay between two magnetic mechanisms,i.e.,superexchange and Zener’s p–d exchange model.Thus,the magnetic behavior and clustering of magnetic dopant can be tuned by the interplay between two magnetic mechanisms.The insensitivity of the tuning effect to U parameter suggests that our strategy could be universal to other DMS.

Growth process,defects,and dopants of bulk β-Ga_(2)O_(3) semiconductor single crystals

β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-size β-Ga_(2)O_(3) single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3) are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3) single crystals are summarized and compared in detail.Then,the defects of β-Ga_(2)O_(3) single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3) are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3) single crystals.

A review of Al-based material dopants for high-performance solid state lithium metal batteries

As the world transitions to green energy, there is a growing focus among many researchers on the requirement for high-efficient and safe batteries. Solid-state lithium metal batteries(SSLMBs) have emerged as a promising alternative to traditional liquid lithium-ion batteries(LIBs), offering higher energy density, enhanced safety, and longer lifespan. The rise of SSLMBs has brought about a transformation in energy storage, with aluminum(Al)-based material dopants playing a crucial role in advancing the next generation of batteries. The review highlights the significance of Al-based material dopants in SSLMBs applications, particularly its contributions to solid-state electrolytes(SSEs), cathodes, anodes,and other components of SSLMBs. Some studies have also shown that Al-based material dopants effectively enhance SSE ion conductivity, stabilize electrode and SSE interfaces, and suppress lithium dendrite growth, thereby enhancing the electrochemical performance of SSLMBs. Despite the above mentioned progresses, there are still problems and challenges need to be addressed. The review offers a comprehensive insight into the important role of Al in SSLMBs and addresses some of the issues related to its applications, endowing valuable support for the practical implementation of SSLMBs.

Cu掺杂SnS_(2)纳米花高效电化学还原CO_(2)合成甲酸盐的研究

为了提高Sn基材料表面CO_(2)电化学还原为甲酸盐的法拉第效率,利用一步溶剂热法合成了具有丰富硫空位的Cu掺杂SnS_(2)纳米花(Cu-SnS_(2-x))催化剂,在较宽的电位窗口实现了CO_(2)电化学还原制备甲酸盐。结果表明,通过调控催化剂制备过程中Cu和Sn的摩尔比,在-1.1 V vs.RHE电位条件下得到了72.64%的FE_(formate),电流密度J_(formate)达到-14.38 mA/cm^(2)。二维纳米片阵列增加了催化活性位点,Cu掺杂所产生的硫空位能够协同提高催化活性、促进电子转移,从而提高甲酸盐的选择性。

国产化叠层电容工艺的失效机理与可靠性研究

通过对国产运算放大器的一项失效分析研究,揭示了由于工艺变更引起的叠层MIS电容短路是导致器件失效的主要原因。在低电场条件下,电容表现正常,但在高电场条件下,由于Fowler Nordheim隧穿效应,热电子碰撞引发的缺陷积累最终导致了电容的短路失效。通过Sentaurus TCAD仿真分析,验证了界面掺杂原子浓度差异对氧化层生长速率的影响,并提出了相应的工艺改进建议,进而提升国产芯片的可靠性。

Effect of Sb dopant amount on the structure and electrocatalytic capability of Ti/Sb-SnO_2 electrodes in the oxidation of 4-chlorophenol

Ti/Sb-SnO2 anodes were prepared by thermal decomposition to examine the influence of the amount of Sb dopant on the structure and electrocatalytic capability of the electrodes in the oxidation of 4-chlorophenol. The physicochemical properties of the Sb-SnO2 coating were markedly influenced by different amounts of Sb dopant. The electrodes, which contained 5% Sb dopant in the coating, presented a much more homogenous surface and much smaller mud-cracks, compared with Ti/Sb-SnO2 electrodes containing 10% or 15% Sb dopant, which exibited larger mud cracks and pores on the surface. However, the main microstructure remained unchanged with the addition of the Sb dopant. No new crystal phase was observed by X-ray diffraction （XRD）. The electrochemical oxidation of 4-chlorophenol on the Ti/SnO2 electrode with 5% Sb dopant was inclined to electrochemical combustion; while for those containing more Sb dopant, intermediate species were accumulated. The electrodes with 5% Sb dopant showed the highest efficiency in the bulk electrolysis of 4-chlorophenol at a current density of 20 mA/cm^2 for 180 min; and the removal rates of 4-chlorophenol and COD were 51.0% and 48.9%, respectively.

The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.

Influences of anionic and cationic dopants on the morphology and optical properties of PbS nanostructures

Selenium and zinc are used as anionic and cationic dopant elements to dope PbS nanostructures. The undoped and doped PbS nanostructures are grown using a thermal evaporation method. Scanning electron microscopy （SEM） results show similar morphologies for the undoped and doped PbS nanostructures. X-ray diffraction （XRD） patterns of three sets of the nanostructures indicate that these nanostructures each have a PbS structure with a cubic phase. Evidence of dopant incorporation is demonstrated by X-ray photoelectron spectroscopy （XPS）. Raman spectra of the synthesized samples con- firm the XRD results and indicate five Raman active modes, which relate to the PbS cubic phase for all the nanostructures. Room temperature photoluminescence （PL） and UV-Vis spectrometers are used to study optical properties of the undoped and doped PbS nanostructures. Optical characterization shows that emission and absorption peaks are in the infrared （IR） region of the electromagnetic spectrum for all PbS nanostructures. In addition, the optical studies of the doped PbS nanos- tructures reveal that the band gap of the Se-doped PbS is smaller, and the band gap of the Zn-doped PbS is bigger than the band gap of the undoped PbS nanostructures.

Experimental Study on Treatment of High-concentrated Sulfur Wastewater by Process of Depositing Natrojarosite and Its Environmental Significance

High-concentrated sulfur wastewater with sodium and COD （chemical oxygen demand） up to 26000 mg/L from a chemical plant, Jiangsu Province of China has been treated by deposition of natrojarosite in lab. The results indicated that the COD of the wastewater was decreased sharply from 26000 mg/L to 1001 mg/L, with removal rate of COD up to 96% by twice precipitations of natrojarosite and twice oxidation of H202. The treated sulfur wastewater reached the requirement of subsequent biochemical treatment to water quality. The optimal operational parameters should be controlled on pH value between 2.50 and 3.20 and 50 g FeCly6H2O solid added in per liter wastewater. The study provided an experimental basis for pretreatment of high-concentrated sulfur wastewater and proposed a new mineralogical method on treatment of other wastewaters. Depositing process of jarosite and its analogs should be able to be used to treat wastewater from mine and other industries to remove S, Fe and other toxic and harmful elements, such as As, Cr, Hg, Pb, etc. in the water.

DASP: Defect and Dopant ab-initio Simulation Package

In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed of four modules for calculating:(ⅰ) elemental chemical potentials,(ⅱ) defect(dopant) formation energies and charge-state transition levels,(ⅲ) defect and carrier densities and(ⅳ) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemical potential that stabilizes compound semiconductors. DASP calls the ab-initio software to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different charge states, based on which the defect formation energies and charge-state transition levels are calculated. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence(PL) spectrum and carrier capture cross sections which can interpret the deep level transient spectroscopy(DLTS). Here we will show three application examples of DASP in studying the undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.

Effect of Some Metal Ion Dopants on Electrochemical Properties of Ni(OH)_2 Film Electrode

The Ni(OH) 2 film electrodes doped respectively with alkali-earth metal aluminum, lead, partial transition metal and some rare-earth metal(altogether 17 kinds of metals) ions were prepared by cathode electrodeposition. The electrode reaction reversibility, the difficult extent of oxygen evolution, the proton diffusion coefficient, the discharge potential of middle value and the active material utilization of the Ni(OH) 2 film electrode were compared with those of the ones doped with the metal ions by means of cyclic voltammetry, potential step and constant current charge-discharge experiments. It was found that Ca 2+ , Co 2+ , Cd 2+ , Al 3+ etc. have obviously positive effect.

Dopant Implantation into the Silicon Substrate with Non-Planar Surface

The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.

Threshold Lowering and by Intensity and Efficiency Enhancement by Dopants in Polymer Emitting Diodes

A new method to increase the luminance and quantum efficiency of polymer light emitting diodes with a lower threshold voltage has been reported.The threshold voltagef luminajice and quantum efficiency have been significantly improved by doping certain dopants with a lower highest occupied molecular orbital(HOMO)level into the hole transporting layer.A high performance device has been achieved by addition of the perylene and tri ph enylamin e as a dopant into poly(N-vinylcarbazole).The luminance and quantum efficiency increase by 2-3 times in comparison with the undoped device,reaching 10000cd/m^(2) in luminance and 0.58%in quantum efficiency,while threshold voltage is reduced to one half va/ue.The energy diagram has been obtained by measuring the HOMO levels and band gap values.Based on this,the carriers injection and balance between electrons and holes as well as the action of dopant are discussed.