The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and...The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and Cu_(2)O/Ni O/NF electrodes via in situ pulsed laser irradiation in liquids(PLIL)for the bifunctional electrocatalysis of oxygen evolution reaction(OER)and furfural oxidation reaction(FOR),respectively.Simultaneous oxidation of NF surface to NiO and deposition of CoO and/or Cu_(2)O on NF during PLIL offer distinct advantages for enhancing both the OER and FOR.CoO/NiO/NF electrocatalyst provides a consistently low overpotential of~359 m V(OER)at 10 m A/cm^(2),achieving the maximum FA yield(~16.37 m M)with 61.5%selectivity,79.5%carbon balance,and a remarkable Faradaic efficiency of~90.1%during 2 h of FOR at 1.43 V(vs.reversible hydrogen electrode).Mechanistic pathway via in situ electrochemical-Raman spectroscopy on CoO/NiO/NF reveals the involvement of phase transition intermediates(NiOOH and CoOOH)as surface-active centers during electrochemical oxidation.The carbonyl carbon in FF is attacked by hydroxyl groups to form unstable hydrates that subsequently undergo further oxidation to yield FA products.This method holds promise for large-scale applications,enabling simultaneous production of renewable building materials and fuel.展开更多
We investigated the role of metal atomization and solvent decomposition into reductive species and carbon clusters in the phase formation of transition-metal carbides(TMCs;namely,Co_(3)C,Fe_(3)C,TiC,and MoC)by pulsed ...We investigated the role of metal atomization and solvent decomposition into reductive species and carbon clusters in the phase formation of transition-metal carbides(TMCs;namely,Co_(3)C,Fe_(3)C,TiC,and MoC)by pulsed laser ablation of Co,Fe,Ti,and Mo metals in acetone.The interaction between carbon s-p-orbitals and metal d-orbitals causes a redistribution of valence structure through charge transfer,leading to the formation of surface defects as observed by X-ray photoelectron spectroscopy.These defects influence the evolved TMCs,making them effective for hydrogen and oxygen evolution reactions(HER and OER)in an alkaline medium.Co_(3)C with more oxygen affinity promoted CoO(OH)intermediates,and the electrochemical surface oxidation to Co_(3)O_(4)was captured via in situ/operando electrochemical Raman probes,increasing the number of active sites for OER activity.MoC with more d-vacancies exhibits strong hydrogen binding,promoting HER kinetics,whereas Fe_(3)C and TiC with more defect states to trap charge carriers may hinder both OER and HER activities.The results show that the assembled membrane-less electrolyzer with Co_(3)C∥Co_(3)C and MoC∥MoC electrodes requires~2.01 and 1.99 V,respectively,to deliver a 10 mA cm−2 with excellent electrochemical and structural stability.In addition,the ascertained pulsed laser synthesis mechanism and unit-cell packing relations will open up sustainable pathways for obtaining highly stable electrocatalysts for electrolyzers.展开更多
High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa (001). Both the electric resisti...High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa (001). Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,展开更多
Effects of laser pulse distance and reinforcing of 5456 aluminum alloy were investigated on laser weldability of Al alloy to duplex stainless steel (DSS) plates. The aluminum alloy plate was reinforced by nickel-base ...Effects of laser pulse distance and reinforcing of 5456 aluminum alloy were investigated on laser weldability of Al alloy to duplex stainless steel (DSS) plates. The aluminum alloy plate was reinforced by nickel-base BNi-2 brazing powder via friction stir processing. The DSS plates were laser welded to the Al5456/BNi-2 composite and also to the Al5456 alloy plates. The welding zones were studied by scanning electron microscopy, X-ray diffractometry, micro-hardness and shear tests. The weld interface layer became thinner from 23 to 5 μm, as the laser pulse distance was increased from 0.2 to 0.5 mm. Reinforcing of the Al alloy modified the phases at interface layer from Al-Fe intermetallic compounds (IMCs) in the DSS/Al alloy weld, to Al-Ni-Fe IMCs in the DSS/Al composite one, since more nickel was injected in the weld pool by BNi-2 reinforcements. This led to a remarkable reduction in crack tendency of the welds and decreased the hardness of the interface layer from ~950 HV to ~600 HV. Shear strengths of the DSS/Al composite welds were significantly increased by ~150%, from 46 to 114 MPa, in comparison to the DSS/Al alloy ones.展开更多
Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α...Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.展开更多
We report a high repetition frequency, high power stability and low laser noise laser-diode(LD) end-pumped Nd: YAG ceramic passively Q-switched laser at 1123 nm based on a Ti_(3)C_(2)T_(x)-polyvinyl alcohol(PVA) film ...We report a high repetition frequency, high power stability and low laser noise laser-diode(LD) end-pumped Nd: YAG ceramic passively Q-switched laser at 1123 nm based on a Ti_(3)C_(2)T_(x)-polyvinyl alcohol(PVA) film as a saturable absorber(SA). A Brewster polarizer(BP) and a birefringent crystal(BC) are incorporated to enable frequency selection and filtering for the passively Q-switched 1123 nm pulsed laser to improve the power stability and reduce the noise. When the pump power is 5.1 W, an average output power of 457.9 m W is obtained, corresponding to a repetition frequency of 1.09 MHz,a pulse width of 56 ns, a spectral line width of 0.65 nm, a power instability of ±0.92%, and a laser noise of 0.89%.The successful implementation of the “Ti_(3)C_(2)T_(x)-PVA film passively Q-switching” combined with “frequency selection and filtering of BP + BC” technology path provides a valuable reference for developing pulsed laser with high repetition frequency, high stability and low noise.展开更多
Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morpho...Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.展开更多
We theoretically investigate the high-order-harmonic generation from the H2^+ molecular ion exposed to the combi- nation of an intense trapezoidal laser and a static field. The results show that the harmonic spectrum...We theoretically investigate the high-order-harmonic generation from the H2^+ molecular ion exposed to the combi- nation of an intense trapezoidal laser and a static field. The results show that the harmonic spectrum is obviously extended and the short quantum path is selected to contribute to the spectrum, because the corresponding long path is seriously suppressed. Then the combined Coulomb and laser field potentials and the time-dependent electron wave packet distributions are applied to illustrate the physical mechanism of high-order harmonic gen- eration. Finally, by adjusting the intensity of the static field and superposing a properly selected range of the HHG spectrum, a 90-as isolated attosecond pulse is straightforwardly obtained.展开更多
The study focused on the modification with platinum of dark defective titania obtained via pulsed laser ablation. Both the method of Pt introduction and the nature of the Pt precursor were varied. All samples exhibite...The study focused on the modification with platinum of dark defective titania obtained via pulsed laser ablation. Both the method of Pt introduction and the nature of the Pt precursor were varied. All samples exhibited similar phase compositions, specific surface areas, and Pt contents. High-resolution transmission electron microscopy coupled with pulsed CO adsorption revealed increased dispersity when photoreduction and the hydroxonitrate complex (Me _(4) N) _(2) [Pt _(2) (OH) _(2) (NO _(3) ) _(8) ] were used. The sample featured a high content of single-atom species and subnano-sized Pt clusters. The X-ray photoelectron spectroscopy results showed that the photoreduction method facilitated the appearance of a larger number of Pt ^(2+) states, which appeared owing to the strong metal-support interaction (SMSI) eff ect of the transfer of electron density from the electron-saturated defects on the TiO _(2) surface to Pt ^(4+) . In the hydrogen evolution reaction, samples with a significant fraction of the Pt ^(2+) ionic component, capable of generating short-lived Pt^(0) single-atom sites under irradiation due to the SMSI eff ect, exhibited the highest photocatalytic activity. The 0.5Pt(C)/TiO_(2) -Ph sample exhibited the highest hydrogen yield with a quantum efficiency of 0.53, retaining its activity even after 8 h of operation.展开更多
TiO2 thin films were prepared on glass substrates using the PLD (Pulsed Laser Deposition) technique. In order to carry out the ablation process, a Nd:YAG laser was used emitting in 1064 nm wavelength at 10 Hz repetiti...TiO2 thin films were prepared on glass substrates using the PLD (Pulsed Laser Deposition) technique. In order to carry out the ablation process, a Nd:YAG laser was used emitting in 1064 nm wavelength at 10 Hz repetition rate, set up for operating in both single-pulse and multi-pulse regimes. A comparison of the deposition rate, the optical and morphological properties of the layers obtained from both ablation regimes was made, which showed that the multi-pulsed ablation produced layers with a higher surface quality and better optical properties.展开更多
The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their appl...The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).展开更多
基金supported by the Korea Basic Science Institute(National research Facilities and Equipment Center)grant funded by the Ministry of Education(2019R1A6C1010042,2021R1A6C103A427)the financial support from the National Research Foundation of Korea(NRF)(2022R1A2C2010686,2022R1A4A3033528,2021R1I1A1A01060380,2021R1C1C2010726,2019H1D3A1A01071209)。
文摘The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and Cu_(2)O/Ni O/NF electrodes via in situ pulsed laser irradiation in liquids(PLIL)for the bifunctional electrocatalysis of oxygen evolution reaction(OER)and furfural oxidation reaction(FOR),respectively.Simultaneous oxidation of NF surface to NiO and deposition of CoO and/or Cu_(2)O on NF during PLIL offer distinct advantages for enhancing both the OER and FOR.CoO/NiO/NF electrocatalyst provides a consistently low overpotential of~359 m V(OER)at 10 m A/cm^(2),achieving the maximum FA yield(~16.37 m M)with 61.5%selectivity,79.5%carbon balance,and a remarkable Faradaic efficiency of~90.1%during 2 h of FOR at 1.43 V(vs.reversible hydrogen electrode).Mechanistic pathway via in situ electrochemical-Raman spectroscopy on CoO/NiO/NF reveals the involvement of phase transition intermediates(NiOOH and CoOOH)as surface-active centers during electrochemical oxidation.The carbonyl carbon in FF is attacked by hydroxyl groups to form unstable hydrates that subsequently undergo further oxidation to yield FA products.This method holds promise for large-scale applications,enabling simultaneous production of renewable building materials and fuel.
基金National Research Foundation of Korea,Grant/Award Numbers:2019H1D3A1A01071209,2021R1I1A1A01060380,2022R1A2C2010686,2022R1A4A3033528Korea Basic Science Institute,Grant/Award Numbers:2019R1A6C1010042,2021R1A6C103A427。
文摘We investigated the role of metal atomization and solvent decomposition into reductive species and carbon clusters in the phase formation of transition-metal carbides(TMCs;namely,Co_(3)C,Fe_(3)C,TiC,and MoC)by pulsed laser ablation of Co,Fe,Ti,and Mo metals in acetone.The interaction between carbon s-p-orbitals and metal d-orbitals causes a redistribution of valence structure through charge transfer,leading to the formation of surface defects as observed by X-ray photoelectron spectroscopy.These defects influence the evolved TMCs,making them effective for hydrogen and oxygen evolution reactions(HER and OER)in an alkaline medium.Co_(3)C with more oxygen affinity promoted CoO(OH)intermediates,and the electrochemical surface oxidation to Co_(3)O_(4)was captured via in situ/operando electrochemical Raman probes,increasing the number of active sites for OER activity.MoC with more d-vacancies exhibits strong hydrogen binding,promoting HER kinetics,whereas Fe_(3)C and TiC with more defect states to trap charge carriers may hinder both OER and HER activities.The results show that the assembled membrane-less electrolyzer with Co_(3)C∥Co_(3)C and MoC∥MoC electrodes requires~2.01 and 1.99 V,respectively,to deliver a 10 mA cm−2 with excellent electrochemical and structural stability.In addition,the ascertained pulsed laser synthesis mechanism and unit-cell packing relations will open up sustainable pathways for obtaining highly stable electrocatalysts for electrolyzers.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 10904030)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091301120002)
文摘High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa (001). Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,
文摘Effects of laser pulse distance and reinforcing of 5456 aluminum alloy were investigated on laser weldability of Al alloy to duplex stainless steel (DSS) plates. The aluminum alloy plate was reinforced by nickel-base BNi-2 brazing powder via friction stir processing. The DSS plates were laser welded to the Al5456/BNi-2 composite and also to the Al5456 alloy plates. The welding zones were studied by scanning electron microscopy, X-ray diffractometry, micro-hardness and shear tests. The weld interface layer became thinner from 23 to 5 μm, as the laser pulse distance was increased from 0.2 to 0.5 mm. Reinforcing of the Al alloy modified the phases at interface layer from Al-Fe intermetallic compounds (IMCs) in the DSS/Al alloy weld, to Al-Ni-Fe IMCs in the DSS/Al composite one, since more nickel was injected in the weld pool by BNi-2 reinforcements. This led to a remarkable reduction in crack tendency of the welds and decreased the hardness of the interface layer from ~950 HV to ~600 HV. Shear strengths of the DSS/Al composite welds were significantly increased by ~150%, from 46 to 114 MPa, in comparison to the DSS/Al alloy ones.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51872187,51302174,11774241,and 61704111)the National Key Research and Development Program of China(Grant No.2017YFB0400304)+3 种基金the Natural Science Foundation of Guangdong Province,China(Grant Nos.2016A030313060 and 2017A030310524)the Project of Department of Education of Guangdong Province,China(Grant No.2014KTSCX110)the Fundamental Research Project of Shenzhen,China(Grant No.JCYJ20180206162132006)the Science and Technology Foundation of Shenzhen,China(Grant No.JCYJ2015-2018)
文摘Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.
基金Project supported by the Serving Local Special Project of Shaanxi Provincial Department of Education of China (Grant No. 19JC040)the National Natural Science Foundation of China (Grant No. 61905193)。
文摘We report a high repetition frequency, high power stability and low laser noise laser-diode(LD) end-pumped Nd: YAG ceramic passively Q-switched laser at 1123 nm based on a Ti_(3)C_(2)T_(x)-polyvinyl alcohol(PVA) film as a saturable absorber(SA). A Brewster polarizer(BP) and a birefringent crystal(BC) are incorporated to enable frequency selection and filtering for the passively Q-switched 1123 nm pulsed laser to improve the power stability and reduce the noise. When the pump power is 5.1 W, an average output power of 457.9 m W is obtained, corresponding to a repetition frequency of 1.09 MHz,a pulse width of 56 ns, a spectral line width of 0.65 nm, a power instability of ±0.92%, and a laser noise of 0.89%.The successful implementation of the “Ti_(3)C_(2)T_(x)-PVA film passively Q-switching” combined with “frequency selection and filtering of BP + BC” technology path provides a valuable reference for developing pulsed laser with high repetition frequency, high stability and low noise.
基金Project supported by the Guizhou Provincial Science and Technology Planning Project,China(Grant No.2018-5781)the National Natural Science Foundation of China(Grant No.51762010)+1 种基金the Guizhou Provincial Science and Technology Foundation,China(Grant Nos.2020-1Y021 and 2020-1Y271)the Guizhou Provincial High-level Innovative Talents,China(Grant No.2018-4006)。
文摘Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.
基金Supported by the National Natural Science Foundation of China under Grant No 11404204the Key Project of the Ministry of Education of China under Grant No 211025+1 种基金the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20111404120004the Natural Science Foundation for Young Scientists of Shanxi Province of China under Grant No2009021005
文摘We theoretically investigate the high-order-harmonic generation from the H2^+ molecular ion exposed to the combi- nation of an intense trapezoidal laser and a static field. The results show that the harmonic spectrum is obviously extended and the short quantum path is selected to contribute to the spectrum, because the corresponding long path is seriously suppressed. Then the combined Coulomb and laser field potentials and the time-dependent electron wave packet distributions are applied to illustrate the physical mechanism of high-order harmonic gen- eration. Finally, by adjusting the intensity of the static field and superposing a properly selected range of the HHG spectrum, a 90-as isolated attosecond pulse is straightforwardly obtained.
文摘The study focused on the modification with platinum of dark defective titania obtained via pulsed laser ablation. Both the method of Pt introduction and the nature of the Pt precursor were varied. All samples exhibited similar phase compositions, specific surface areas, and Pt contents. High-resolution transmission electron microscopy coupled with pulsed CO adsorption revealed increased dispersity when photoreduction and the hydroxonitrate complex (Me _(4) N) _(2) [Pt _(2) (OH) _(2) (NO _(3) ) _(8) ] were used. The sample featured a high content of single-atom species and subnano-sized Pt clusters. The X-ray photoelectron spectroscopy results showed that the photoreduction method facilitated the appearance of a larger number of Pt ^(2+) states, which appeared owing to the strong metal-support interaction (SMSI) eff ect of the transfer of electron density from the electron-saturated defects on the TiO _(2) surface to Pt ^(4+) . In the hydrogen evolution reaction, samples with a significant fraction of the Pt ^(2+) ionic component, capable of generating short-lived Pt^(0) single-atom sites under irradiation due to the SMSI eff ect, exhibited the highest photocatalytic activity. The 0.5Pt(C)/TiO_(2) -Ph sample exhibited the highest hydrogen yield with a quantum efficiency of 0.53, retaining its activity even after 8 h of operation.
文摘TiO2 thin films were prepared on glass substrates using the PLD (Pulsed Laser Deposition) technique. In order to carry out the ablation process, a Nd:YAG laser was used emitting in 1064 nm wavelength at 10 Hz repetition rate, set up for operating in both single-pulse and multi-pulse regimes. A comparison of the deposition rate, the optical and morphological properties of the layers obtained from both ablation regimes was made, which showed that the multi-pulsed ablation produced layers with a higher surface quality and better optical properties.
文摘The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).