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A Novel Framework to Construct S-Box Quantum Circuits Using System Modeling: Application to 4-Bit S-Boxes
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作者 Yongjin Jeon Seungjun Baek Jongsung Kim 《Computer Modeling in Engineering & Sciences》 SCIE EI 2024年第10期545-561,共17页
Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the... Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the performance of attacks using quantum computers depends on the efficiency of the quantum circuit of the encryption algorithms,research research on the implementation of quantum circuits is essential.This paper presents a new framework to construct quantum circuits of substitution boxes(S-boxes)using system modeling.We model the quantum circuits of S-boxes using two layers:Toffoli and linear layers.We generate vector spaces based on the values of qubits used in the linear layers and apply them to find quantum circuits.The framework finds the circuit bymatching elements of vector spaces generated fromthe input and output of a given S-box,using the forward search or themeet-in-the-middle strategy.We developed a tool to apply this framework to 4-bit S-boxes.While the 4-bit S-box quantum circuit construction tool LIGHTER-R only finds circuits that can be implemented with four qubits,the proposed tool achieves the circuits with five qubits.The proposed tool can find quantum circuits of 4-bit odd permutations based on the controlled NOT,NOT,and Toffoli gates,whereas LIGHTER-R is unable to perform this task in the same environment.We expect this technique to become a critical step toward optimizing S-box quantum circuits. 展开更多
关键词 System modeling quantum circuit S-box circuit quantum computer
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Lg-Q model and its implication on high-frequency ground motion for earthquakes in the Sichuan and Yunnan region 被引量:3
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作者 Zhi Wei Li Zhao 《Earth and Planetary Physics》 CSCD 2019年第6期526-536,共11页
Low-rise buildings are susceptible to high-frequency ground motion.The high-frequency ground motions at regional distances are mainly controlled by crustal Lg waves whose amplitudes are typically much larger than thos... Low-rise buildings are susceptible to high-frequency ground motion.The high-frequency ground motions at regional distances are mainly controlled by crustal Lg waves whose amplitudes are typically much larger than those of body waves.In this study,we develop a Lg-wave Q model for the Sichuan and Yunnan region in the frequency band of 0.3–2.0 Hz using regional seismic records of 1166 earthquakes recorded at 152 stations.Comparison between the observed pattern of ground motion from real earthquake and model prediction demonstrates the robustness and effectiveness of our Lg-Q model.Then,assuming that the Lg-wave Q structure is the main factor affecting the propagation of the high-frequency ground motions,we calculate the spatial distributions of high-frequency ground motions from scenario earthquakes at different locations in the region using the average Lg-wave attenuation model over the frequency band of 0.3–2.0 Hz.We also use the Lg-Q model to estimate the distribution of cumulative energy of high-frequency ground motions based on the historical seismicity of the Sichuan and Yunnan region.Results show that the Lg-Q model can be used effectively in estimating the spatial distribution of high-frequency seismic energies and thus can contribute to the assessment of seismic hazard to low-rise buildings. 展开更多
关键词 Lg-wave attenuation model high-frequency ground motions seismic hazards LOW-RISE buildings
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Total ionizing dose effect modeling method for CMOS digital-integrated circuit
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作者 Bo Liang Jin-Hui Liu +3 位作者 Xiao-Peng Zhang Gang Liu Wen-Dan Tan Xin-Dan Zhang 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2024年第2期32-46,共15页
Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID eff... Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs. 展开更多
关键词 CMOS digital-integrated circuit Total ionizing dose IBIS model Behavior-physical hybrid model Physical parameters
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Fluid-chemical modeling of the near-cathode sheath formation process in a high current broken in DC air circuit breaker
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作者 彭世东 李静 +3 位作者 段薇 曹云东 刘树鑫 黄浩 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期523-538,共16页
When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop thr... When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment. 展开更多
关键词 near-cathode sheath atmospheric pressure air arc fluid-chemical model high current DC air circuit breaker(DCCB)
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Modeling and simulation of a high-frequency micro-pump based on giant magnetostrictive material (GMM)
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作者 WANG Chuan-li CHENG Xia AN Ping 《Journal of Coal Science & Engineering(China)》 2010年第2期206-209,共4页
A new type of high-frequency micro-pump was designed, in which GMA (Giant Magnetostrictive Actuator) was employed to replace the traditional motor drive, owing to its significant characteristics of fast response, high... A new type of high-frequency micro-pump was designed, in which GMA (Giant Magnetostrictive Actuator) was employed to replace the traditional motor drive, owing to its significant characteristics of fast response, high accuracy, easily miniaturized and so on. Both the mathematic and simulation models of the micro-pump were built.A set of raw data was used for simulation studies.The results show that the micro-pump based on GMA has achieved the features of high-frequency response and high accuracy, theoretically displaying the performance merits of a giant magnetostrictive material (GMM) high-frequency micro-pump. 展开更多
关键词 giant magnetostrictive material (GMM) high-frequency micro-pump model SIMULATION
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A Thermal-Conscious Integrated Circuit Power Model and Its Impact on Dynamic Voltage Scaling Techniques 被引量:2
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作者 刘勇攀 杨华中 汪蕙 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第4期530-536,共7页
We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underes... We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underestimated by 52 % if thermal effects are omitted. Furthermore, an inconsistency arises when energy and temperature are simultaneously optimized by dynamic voltage scaling. Temperature is a limiting factor for future integrated circuits,and the thermal optimization approach can attain a temperature reduction of up to 12℃ with less than 1.8% energy penalty compared with the energy optimization one. 展开更多
关键词 CMOS integrated circuits power model TEMPERATURE DVS
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Small-Signal Equivalent Circuit Modeling of a Photodetector Chip 被引量:1
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作者 苗昂 李轶群 +4 位作者 吴强 崔海林 黄永清 黄辉 任晓敏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1878-1882,共5页
A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector's RF performance i... A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector's RF performance into consideration,is first determined based on the device's physical structure. The photodetector's S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip's high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits. 展开更多
关键词 small-signal equivalent circuit model of photodetector parameter extraction high frequency meas-urement genetic algorithm
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Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers
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作者 毛陆虹 陈弘达 +5 位作者 梁琨 唐君 吴荣汉 粘华 郭维廉 吴霞宛 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第1期82-86,共5页
Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are presented.The modulation properties both in analytic equation calculation and in circuit mo... Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are presented.The modulation properties both in analytic equation calculation and in circuit model simulation are studied.The analytic equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulated by using Pspice program respectively.The results of calculation and the simulation are in good agreement with each other.Experiment is performed to testify the circuit model. 展开更多
关键词 VCSEL circuit model modulation property
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A Slice Analysis-Based Bayesian Inference Dynamic Power Model for CMOS Combinational Circuits
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作者 陈杰 佟冬 +2 位作者 李险峰 谢劲松 程旭 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期502-509,共8页
To improve the accuracy and speed in cycle-accurate power estimation, this paper uses multiple dimensional coefficients to build a Bayesian inference dynamic power model. By analyzing the power distribution and intern... To improve the accuracy and speed in cycle-accurate power estimation, this paper uses multiple dimensional coefficients to build a Bayesian inference dynamic power model. By analyzing the power distribution and internal node state, we find the deficiency of only using port information. Then, we define the gate level number computing method and the concept of slice, and propose using slice analysis to distill switching density as coefficients in a special circuit stage and participate in Bayesian inference with port information. Experiments show that this method can reduce the power-per-cycle estimation error by 21.9% and the root mean square error by 25.0% compared with the original model, and maintain a 700 + speedup compared with the existing gate-level power analysis technique. 展开更多
关键词 slice analysis Bayesian inference power model CMOS combinational circuit
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Nonlinear Auto-Companding Method for Behavioral Modeling of Switched-Current Circuits
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作者 王伟 曾璇 +2 位作者 陶俊 苏仰峰 唐璞山 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第12期1254-1261,共8页
A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distri... A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distribution obtained through approximating the input output function of the SI circuit by conventional wavelet collocation method.In practical applications,the proposed method is a general purpose approach,by which both the small signal effect and the large signal effect are modeled in a unified formulation to ease the process of modeling and simulation.Compared with the published modeling approaches,the proposed nonlinear auto companding method works more efficiently not only in controlling the error distribution but also in reducing the modeling errors.To demonstrate the promising features of the proposed method,several SI circuits are employed as examples to be modeled and simulated. 展开更多
关键词 wavelet collocation method behavioral modeling switched current circuits nonlinear auto companding
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Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities
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作者 胡江 孙玲玲 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第12期2320-2329,共10页
Novel accurate and efficient equivalent circuit trained artificial neural-network (EC-ANN) models,which inherit and improve upon EC model and EM-ANN models' advantages,are developed for coplanar waveguide (CPW) d... Novel accurate and efficient equivalent circuit trained artificial neural-network (EC-ANN) models,which inherit and improve upon EC model and EM-ANN models' advantages,are developed for coplanar waveguide (CPW) discontinuities. Modeled discontinuities include : CPW step, interdigital capacitor, symmetric cross junction, and spiral inductor, for which validation tests are performed. These models allow for circuit design, simulation, and optimization within a CAD simulator. Design and realization of a coplanar lumped element band pass filter on GaAs using the developed CPW EC-ANN models are demonstrated. 展开更多
关键词 CPW DISCONTINUITIES modelS equivalent circuit artificial neural-network band pass filter
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A Comparative Study on Open Circuit Voltage Models for Lithium-ion Batteries 被引量:10
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作者 Quan-Qing Yu Rui Xiong +1 位作者 Le-Yi Wang Cheng Lin 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2018年第4期84-91,共8页
The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little att... The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given. 展开更多
关键词 State of charge Open circuit voltage model Lithium-ion battery NMC LFP
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Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance 被引量:9
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作者 JI Yan-ju QIU Shi-lin LI Gang 《Journal of Central South University》 SCIE EI CAS CSCD 2020年第9期2606-2613,共8页
With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in ... With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model. 展开更多
关键词 lithium battery equivalent circuit model parameter identification SOC estimation
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LOW-FREQUENCY LOW-NOISE CIRCUITS DESIGN USING AN E_n-I_n MODEL 被引量:1
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作者 Wang Jun (China Academy of Engineering and Physics, Chengdu 610003)Dai Yisong(Jilin University of Technology, Changchun 130025) 《Journal of Electronics(China)》 1999年第1期58-65,共8页
In view of the limitations of a Rn-Gn model in the low frequency range and the defects of an En-In model in common use now, this paper builds a complete En-In model according to the theory of random harmonic. The para... In view of the limitations of a Rn-Gn model in the low frequency range and the defects of an En-In model in common use now, this paper builds a complete En-In model according to the theory of random harmonic. The parameters for the low-noise design such as the equivalent input noisy voltage Ens, the optimum source impedance Zsopt and the minimum noise figure Fmin can be calculated accurately by using this En-In model because it considers the coherence between the noise sources fully. Moreover, this paper points out that it will cause the maximum 30% miscalculation when neglecting the effects of the correlation coefficient 7. Using the series-series circuits as an example, this paper discusses the methods for the En-In noise analysis of electronic circuits preliminarily and demonstrates its correctness through the comparison between the simulated and measured results of the minimum noise figure Fmin of a single current series negative feedback circuit. 展开更多
关键词 En-In model LOW-FREQUENCY circuitS LOW-NOISE DESIGN
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BALANCED TRUNCATED MODELS OF C INTERCONNECT CIRCUITS AND THEIR SIMULATION 被引量:1
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作者 YuanBaoguo WangBen WangShengguo 《Journal of Electronics(China)》 2005年第4期403-408,共6页
The Balanced Truncation Method (BTM) is applied to an even distributed RC interconnect case by using Wang's closed-forms of even distributed RC interconnect models. The results show that extremely high order RC in... The Balanced Truncation Method (BTM) is applied to an even distributed RC interconnect case by using Wang's closed-forms of even distributed RC interconnect models. The results show that extremely high order RC interconnect can be high-accurately approximated by only third order balanced model. Related simulations are executed in both time domain and frequency domain. The results may be applied to VLSI interconnect model reduction and design. 展开更多
关键词 VLSI INTERCONNECT RC distributed circuit modeling Balanced model reduction
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High-frequency interference waves in low strain dynamic testing of X-section concrete piles 被引量:1
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作者 Qu Liming Fan Yuming +2 位作者 Ding Xuanming Yang Changwei Zhang Yanling 《Earthquake Engineering and Engineering Vibration》 SCIE EI CSCD 2021年第4期877-885,共9页
Stress waves propagate along vertical,radial and circumferential directions when a non-uniformly distributed load is applied at one end of a three-dimensional shaft.As a result,the receiving signals are usually mixed ... Stress waves propagate along vertical,radial and circumferential directions when a non-uniformly distributed load is applied at one end of a three-dimensional shaft.As a result,the receiving signals are usually mixed with undesired interference components,often featuring as high-frequency fluctuations.Previous studies have revealed that sectional geometry(shape and size)greatly affects the high-frequency interference.In this study,low strain dynamic testing on full-scale X-section concrete is conducted in order to investigate the influences of high-frequency interference on velocity responses at the pile head.Emphasis is placed on the frequency and peak value of interference waves at various receiving points.Additionally,the effects of the geometrical,and mechanical properties of the pile shaft on high-frequency interference are elaborated on through the three-dimensional finite element method.The results show that the measured wave is obscured by interference waves superposed by two types of high-frequency components.The modulus and cross-sectional area are contributing factors to the frequency and peak value of the interference waves.On the other hand,the position with the least interference is determined,to some extent,by the accurate shape of the X-section. 展开更多
关键词 low strain dynamic testing X-section concrete pile high-frequency interference full-scale model test finite element method
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Small Signal Circuit Model of Double Photodiodes 被引量:1
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作者 HANJian,zhong NiGuo-qiang MAOLu-hong 《Semiconductor Photonics and Technology》 CAS 2004年第3期164-167,173,共5页
The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission d... The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs. 展开更多
关键词 PHOTODETECTOR circuit model Device simulation
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Applying Graph Theory and Mathematical-Computational Modelling to Study a Neurophysiological Circuit 被引量:1
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作者 Camila de Andrade Kalil Maria Clícia Stelling de Castro +1 位作者 Dilson Silva Célia Martins Cortez 《Open Journal of Modelling and Simulation》 2021年第2期159-171,共13页
The aim of the present study is to contribute to the knowledge about the functioning of the neuronal circuits. We built a mathematical-computational model using graph theory for a complex neurophysiological circuit co... The aim of the present study is to contribute to the knowledge about the functioning of the neuronal circuits. We built a mathematical-computational model using graph theory for a complex neurophysiological circuit consisting </span><span style="font-family:Verdana;">of a reverberating neuronal circuit and a parallel neuronal circuit, which</span><span style="font-family:Verdana;"> could </span><span style="font-family:Verdana;">be coupled. Implementing our model in C++ and applying</span><span style="font-family:Verdana;"> neurophysiological values found in the literature, we studied the discharge pattern of the reverberant circuit and the parallel circuit separately for the same input signal pattern, examining the influence of the refractory period and the synaptic delay on the respective output signal patterns. Then, the same study was performed for the complete circuit, in which the two circuits were coupled, and the parallel circuit could then influence the functioning of the reverberant. The results showed that the refractory period played an important role in forming the pattern of the output spectrum of a reverberating circuit. The inhibitory action of the parallel circuit was able to regulate the reverberation frequency, suggesting that parallel circuits may be involved in the control of reverberation circuits related to motive activities underlying precision tasks and perhaps underlying neural work processes and immediate memories. 展开更多
关键词 Mathematical-Computational modelling Neurophysiological circuit Reverberating circuit Parallel circuit
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Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs 被引量:1
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作者 Can Li Cong-Wei Liao +3 位作者 Tian-Bao Yu Jian-Yuan Ke Sheng-Xiang Huang Lian-Wen Deng 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第2期93-96,共4页
An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating mo... An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance(C_(TI)/C_(BI)).Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure. 展开更多
关键词 TFT Concise modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated circuit Designs Zn
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Value of High-Frequency Relic Gravitational Wave (HFRGW) Detection to Astrophysics and Fabrication and Utilization of the Li-Baker HFRGW Detector 被引量:2
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作者 Andrew Walcott Beckwith Robert M. L. Baker Jr 《Journal of High Energy Physics, Gravitation and Cosmology》 2020年第1期103-122,共20页
Up to the present time gravitational-wave detectors, such as LIGO and Virgo, have been sensitive to frequencies on the order of a few thousand to a small fraction of an Hz. They have been most effective in the study o... Up to the present time gravitational-wave detectors, such as LIGO and Virgo, have been sensitive to frequencies on the order of a few thousand to a small fraction of an Hz. They have been most effective in the study of black-hole mergers. We suggest that high-frequency relic gravitational wave (HFRGW) detectors be developed, especially the Li-Baker HFRGW detector, in the gigahertz and higher frequency range. We believe collecting cosmological, primordial observational data especially generated during the first few seconds after the beginning of our Universe is extremely important. One motivation for this paper is, therefore, that we are confident that observation of relic gravitational waves will provide vital information about the birth of our Universe and its early dynamical evolution. Other astrophysical applications of HFRGW detectors involve the entropy growth of the early Universe, an ability to study alternatives to inflation and to provide clues about the symmetries underlying new physics at the highest energies. A working hypothesis or theory, based upon the rollout of our Universe from infinitesimal Planck Length and Planck Time is presented. This theory involves the rapid motion of time and matter during that early time having frequencies on the order of trillions of cycles per second or more. Several alternative HFRGW detectors are described and the proposed Li-Baker HFRGW detector, which is theoretically sensitive to GW amplitudes, A, as small as 10-32, is discussed in detail. Such sensitivity may provide a means for verifying or falsifying the rollout of our Universe working hypothesis. Essentially a combination of theory and experimentation is presented. It is recommended that plans and detailed specifications for the Li-Baker HFRGW detector be prepared in order to expedite its fabrication. 展开更多
关键词 high-frequency GRAVITATIONAL Waves DARK Energy DARK Matter Variation of Speed of Time Beyond the Standard model of COSMOLOGY Early UNIVERSE
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