Research on Switching Characteristics Based on Optimization Design of SiC MOSFET Drive Circuit

With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.

Simulation realization of skip cycle mode integrated control circuit in the switching power supply with low standby loss

This paper explores and proposes a design solution of an integrated skip cycle mode （SCM） control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V process. In order to meet the requirement of a wide temperature range and high yields of products, the schematic extracted from the layout is simulated with five process corners at 27℃ and 90℃. Simulation results demonstrate that the proposed integrated circuit is immune to noise and achieves skipping cycle control when switching mode power supply （SMPS） works with low load or without load.

A Novel Crowbar Impulse Current Circuit for Testing the Switch-Type SPD

A crowbar impulse current circuit for testing the switch-type surge protective device （SPD） is presented. The crowbar circuit consists of a computer control circuit, a trigger voltage pulse generator, a main discharging switch, and a crowbar pseudospark switch. The active trigger technology was studied in the crowbar impulse current circuit. The circuit monitors the main discharging current and generates a trigger signal at a proper time for the crowbar pseudospark switch operation. The trigger characteristics of the main discharge switch and the crowbar pseu- dospark switch were investigated. By monitoring the preset applied capacitor voltage, the gap distance of the main discharging switch could be adjusted to ensure a discharging delay time less than 2 μs. Equipped with a surface ttashover trigger device made of high relative perimittivity dielectric material BaTiO3 （εr = 3460）, the discharge delay time of the crowbar pseudospark switch is less than 85 ns, and the minimum operating voltage is less than 1% of its self-breakdown voltage. With a storage capacitor of 9 μF , an inductor of 18 μH and a crowbar pseudospark switch, a load of 30 mΩ and an applied capacitor voltage of 40 kV, an impulse current waveform of maximum 25 kA was generated with a rise time and time to half peak value of 17.2 μs and 336μs respectively.

DESIGN OF TERNARY CURRENT-MODE CMOS CIRCUITS BASED ON SWITCH-SIGNAL THEORY

By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is suitable to current-mode CMOS circuits is proposed. Thecircuits, such as ternary full-adder etc., designed by using this theory have simpler circuit struc-tures and correct logic functions. It is confirmed that this theory is efficient in guiding the logicdesign of current-mode CMOS circuits at switch level.

A novel circuit design for complementary resistive switch-based stateful logic operations

Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch（CRS）-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.

Change-over switch for quantum states transfer with topological channels in a circuit-QED lattice

We propose schemes to realize robust quantum states transfer between distant resonators using the topological edge states of a one-dimensional circuit quantum electrodynamics(QED)lattice.Analyses show that the distribution of edge states can be regulated accordingly with the on-site defects added on the resonators.And we can achieve different types of quantum state transfer without adjusting the number of lattices.Numerical simulations demonstrate that the on-site defects can be used as a change-over switch for high-fidelity single-qubit and two-qubit quantum states transfer.This work provides a viable prospect for flexible quantum state transfer in solid-state topological quantum system.

20 MHz Switched-Current Sample-and-Hold Circuit with Low Charge Injection

A switched-current sample-and-hold circuit with low charge injection was proposed. To obtain low noise and charge injection, the zero-voltage switching was used to remove the signal-dependent charge injection, and the signal-independent charge injection was reduced by removing the feed-through voltage from the input port of the memory transistor directly. This current sample-and-hold circuit was implemented using CMOS 180 nm 1.8 V technology. For a 0.8 MHz sinusoidal signal input, the simulated signal-to-noise and distortion ratio and total harmonic distortion were improved from 53.74 dB and -51.24 dB to 56.53 dB and -54.36 dB at the sampling rate of 20 MHz respectively, with accuracy of 9.01 bit and power consumption of 0.44 mW.

基于新能源发电改进型移相全桥变换器研究

新能源发电中需要广泛使用移相全桥变换器,以实现软开关技术从而减小系统的开关损耗。而传统移相全桥直流变换器滞后臂在轻载时难以实现ZVS,导致系统大功率输出时效率降低以及系统换路时容易产生尖峰电压、电流等现象,针对这一问题,提出了一种改进的有源软开关移相全桥DC-DC变换器拓扑。系统首先提出了改进变换器的拓扑结构,在此基础上对其工作模态进行了研究分析,并合理优化相关器件的选型,最后通过系统仿真及试验平台进行了系统仿真和试验测试,结果表明,所设计的加入辅助电路改进型移相全桥直流变换器在轻载情况下,能够使变换器滞后臂达到软开关效果,同时,在大功率输出情况下,对器件发热、电压波形振荡均有较好的抑制作用,系统整体效率变高,同时可靠性、稳定性变强。

高压断路器触头烧蚀及电寿命评估研究综述

随着高压断路器接近设计寿命年限其触头烧蚀情况越来越严重,评估高压断路器电寿命可提高利用效率同时保证其运行可靠性。根据近些年有关开关电器电寿命相关文献,首先从触头烧蚀数学模型出发剖析了断路器电寿命终结物理过程;然后对比了目前常用的断路器电寿命评估方法优缺点,指出数据模型是驱动设备寿命准确评估的关键,并借鉴其他类型开关电器电寿命相关研究为高压断路器靠性评估开拓了思路。最后指出高压断路器电寿命预测所面临挑战以及研究方向。

一种基于HTCC的高隔离度开关电路设计

基于开关芯片实现的开关电路是射频前端的基本单元之一,其功能是实现射频信号的导通和关断,在小功率射频信号传输中应用广泛。本文以6 GHz~15 GHz超宽带、60 dB隔离度为设计目标,采用高温共烧陶瓷基板工艺和级联腔体隔离技术,以级联开关芯片为基本电路结构,设计了高隔离度开关电路。该电路包含一只限幅器和两只吸收式砷化镓单刀单掷开关,装配于两个相邻的隔离腔体结构中,通过类同轴垂直传输过渡到基板内对称带状线传输结构,再辅以两侧地孔,实现电磁屏蔽。对开关电路进行电磁场建模仿真,结果表明该结构具有良好的传输特性和隔离特性;在射频前端电路制造完成后对开关电路进行装配和测试,测试结果与建模仿真结果一致性高,验证了本文设计的开关电路具有高隔离度特性。

基于改进型ZVT Buck电路的IPT充电系统设计

为了避免在感应式无线电能传输系统的耦合机构中增加多余的开关器件以及额外的无源元件,同时减小系统工作在高频率、大功率时全控型开关器件存在的开关损耗,提出基于改进型ZVT Buck电路闭环控制的方法实现对电池的恒流、恒压充电,通过分析改进型ZVT Buck电路的工作模态以及对电路参数的设计,确保在整个充电过程中DC-DC变换器均工作在软开关状态,最后搭建充电电流为35 A、充电电压为370 V的实验平台验证该方法的可行性。结果表明:该方法控制简单,并且降低了系统电路结构的复杂度,传输效率相对较高,能够满足恒流恒压充电需求。

一种基于磁耦合转移原理的10kV直流断路器

直流电流没有自然过零点,因此开断直流短路电流比开断交流短路电流更为困难。本文介绍一种基于磁耦合电流转移原理的中压10kV直流断路器拓扑方案,该断路器可实现对15kA直流电流的快速开断。首先,对直流断路器原理和控制逻辑进行介绍;然后,根据拓扑方案提出快速机械开关、电力电子开关、磁耦合装置等核心部件的设计思路;最后,搭建仿真模型对该方案进行仿真分析,模拟不同工况下的开断情况,仿真结果验证了该方案的有效性。

船用无线电标校信标机程控频点切换的设计

船用无线电标校信标机是指能够为船载统一测控设备提供稳定跟踪信号的射频信号发生器。一般安装于探空气球内部或悬挂于无人机底部,经过飞行至一定高度和距离后,船载统一测控设备对该信标信号进行跟踪试验。当前船用无线电标校信标机在空中仅能工作在一个频点,若需要对多个工作频点进行标校则需要重复释放多个无线电信标机。为解决此问题,设计一种标校信标机外围变频控制电路,将该电路连接至标校信标机即可完成释放一个信标机开展多频点标校的难题。该变频电路以低功耗单片机STC89C52RC作为基本控制单元,结合DC⁃DC降压模块和电平转换模块,实现将多个预置工作频点信息按预定帧格式定时发送至信标机的功能。经过十余次海上航天测量试验的检验,结果表明程控变频控制电路运行稳定、控制精度高,节省了标校时间和经费预算。

基于自然容错开关表的五相永磁同步电机直接转矩控制

五相永磁同步电机(permanent-magnetsynchronous motor,PMSM)传统直接转矩控制(direct torque control,DTC)存在相电流畸变严重、共模电压(common-modevoltage,CMV)高、转矩和磁链脉动大等问题,且无法实现相开路故障情况下的无扰运行。为解决上述问题,提出一种基于自然容错开关表的DTC策略。该策略根据PMSM开路故障前后基电压矢量的特点以及三次平面合成电压矢量为零的原则,构建虚拟矢量(virtual vector,VV),设计故障前后同一套自然容错开关表,进而不但抑制了故障导致的转矩脉动,而且在故障前后均能降低三次谐波电流、减小转矩和磁链脉动、抑制CMV。实验结果验证所提策略的可行性。

适用于电动汽车的单开关动作双向固态断路器

设计了一种适用于电动汽车的单开关动作直流固态断路器,该断路器在切除短路故障时只需要通过控制一个开关的通断实现短路故障的隔离与短路能量的耗散。这里对该固态断路器的不同工作状态进行分析,建立相应的数学模型,并以此作为参数设计的理论依据,设计完成后在电动汽车动力电池输出400 V/20 A工作模式下进行短路切除实验,实验结果表明:电动汽车没有发生短路故障时,单开关动作直流固态断路器不影响电路的正常运行;当电动汽车发生短路故障后,该断路器能在5 ms内自动关断,且可以平滑的吸收故障电流使固态开关所承受的峰值电压小于550 V,对电动汽车具有可靠的保护作用。

UC3842的开关电源项目式教学方法应用

基于UC3842的开关电源项目式教学方法应用实践,介绍开关电源的基本原理,分析基于UC3842的开关电源电路的教学内容、教学目标、学生的学情特点和重难点。采用将实训教学与项目式教学相结合的方法,将开关电源电路设计的具体应用场景融入到实际课程教学中。以“工作任务”为明线,以“思政融入”为暗线,运用混合式教学、任务驱动法、合作探究法等方法手段,以课前、课中和课后三段教学流程实施教学,取得良好的教学效果。

基于自学习的LSTM网络短路电流零点预测方法

短路故障在首个大半波内快速选相开断对提升电力系统稳定性具有重要意义。为此,本文研究并提出了一种基于自学习的长短期记忆(LSTM)网络短路电流零点预测方法。构建了基于自学习优化训练的LSTM短路电流预测模型,并采用循环迭代法对短路电流波形及过零点进行预测;搭建了RTDS试验平台,验证了自学习LSTM网络对零点预测的准确性、快速性以及稳定性;讨论了不同短路故障电流的起始相角、谐波含量、信噪比、衰减直流分量时间常数等因素对自学习LSTM预测精度的影响;仿真与试验结果表明自学习LSTM网络对短路电流零点具有较好的预测能力,当采样时间为3 ms时,自学习LSTM首零点预测精度已与RLS算法采样时间5 ms时预测精度相当,为在首个大半波内实现相控开断提供了依据。