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Image Inpainting Detection Based on High-Pass Filter Attention Network
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作者 Can Xiao Feng Li +3 位作者 Dengyong Zhang Pu Huang Xiangling Ding Victor S.Sheng 《Computer Systems Science & Engineering》 SCIE EI 2022年第12期1145-1154,共10页
Image inpainting based on deep learning has been greatly improved.The original purpose of image inpainting was to repair some broken photos, suchas inpainting artifacts. However, it may also be used for malicious oper... Image inpainting based on deep learning has been greatly improved.The original purpose of image inpainting was to repair some broken photos, suchas inpainting artifacts. However, it may also be used for malicious operations,such as destroying evidence. Therefore, detection and localization of imageinpainting operations are essential. Recent research shows that high-pass filteringfull convolutional network (HPFCN) is applied to image inpainting detection andachieves good results. However, those methods did not consider the spatial location and channel information of the feature map. To solve these shortcomings, weintroduce the squeezed excitation blocks (SE) and propose a high-pass filter attention full convolutional network (HPACN). In feature extraction, we apply concurrent spatial and channel attention (scSE) to enhance feature extraction and obtainmore information. Channel attention (cSE) is introduced in upsampling toenhance detection and localization. The experimental results show that the proposed method can achieve improvement on ImageNet. 展开更多
关键词 Image inpainting detection spatial attention channel attention full convolutional network high-pass filter
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High-resolution Image Reconstruction by Neural Network and Its Application in Infrared Imaging
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作者 张楠 金伟其 苏秉华 《Defence Technology(防务技术)》 SCIE EI CAS 2005年第2期177-181,共5页
As digital image techniques have been widely used, the requirements for high-resolution images become increasingly stringent. Traditional single-frame interpolation techniques cannot add new high frequency information... As digital image techniques have been widely used, the requirements for high-resolution images become increasingly stringent. Traditional single-frame interpolation techniques cannot add new high frequency information to the expanded images, and cannot improve resolution in deed. Multiframe-based techniques are effective ways for high-resolution image reconstruction, but their computation complexities and the difficulties in achieving image sequences limit their applications. An original method using an artificial neural network is proposed in this paper. Using the inherent merits in neural network, we can establish the mapping between high frequency components in low-resolution images and high-resolution images. Example applications and their results demonstrated the images reconstructed by our method are aesthetically and quantitatively (using the criteria of MSE and MAE) superior to the images acquired by common methods. Even for infrared images this method can give satisfactory results with high definition. In addition, a single-layer linear neural network is used in this paper, the computational complexity is very low, and this method can be realized in real time. 展开更多
关键词 HIGH resolution reconstruction infrared HIGH frequency component MAE(mean absolute error) MSE(mean squared error) neural network linear interpolation Gaussian low-pass filter
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X波段宽带数控移相器180°移相单元的设计
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作者 陈思婷 陈铖颖 +2 位作者 马骁 杨新豪 王尘 《厦门理工学院学报》 2023年第1期17-23,共7页
基于0.25μm GaAs pHEMT工艺,设计出一种应用于X波段宽带数控移相器的180°移相单元。该设计采用SPDT开关和五阶高通-低通滤波拓扑结构,通过改进SPDT开关、提升滤波器的阶数和改变180°移相单元的切换方式改善电路的插入损耗和... 基于0.25μm GaAs pHEMT工艺,设计出一种应用于X波段宽带数控移相器的180°移相单元。该设计采用SPDT开关和五阶高通-低通滤波拓扑结构,通过改进SPDT开关、提升滤波器的阶数和改变180°移相单元的切换方式改善电路的插入损耗和相位平坦度,消除由前32个相位产生的相位累积误差。仿真结果表明,180°移相单元插入损耗为2.42~2.67 dB,相移范围为179°~182°,输入输出电压驻波比小于1.15,在同样的结构下,本设计可实现更优异的性能和更紧凑的芯片面积。 展开更多
关键词 X波段数控移相器 高通-低通网络型移相器结构 180°移相单元 GaAs pHEMT工艺
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S波段六位高精度移相器设计 被引量:13
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作者 杨小峰 史江义 +1 位作者 马佩军 郝跃 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2014年第2期125-129,共5页
采用0.25μmGaAs高电子迁移率晶体管(HEMT)7-艺设计了一款六位S波段数字移相器.移相器采用高低通和全通网络结构,运用了提高相位精度和抑制级联散射的方法.移相器在0°~360°相位范围内以5.625°步进,在2.1~2.7... 采用0.25μmGaAs高电子迁移率晶体管(HEMT)7-艺设计了一款六位S波段数字移相器.移相器采用高低通和全通网络结构,运用了提高相位精度和抑制级联散射的方法.移相器在0°~360°相位范围内以5.625°步进,在2.1~2.7GHz频率范围内,最小相位均方根误差仅为1.13°.频带范围内插入损耗小于6.3dB,幅度均衡小于0.4dB,输入输出反射系数小于一10dB. 展开更多
关键词 高电子迁移率晶体管 数字移相器 高低通 相位精度 级联散射抑制
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Design of High-Efficiency broadband power amplifier using low-pass bias network 被引量:1
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作者 Yu Qijin Yu Cuiping +1 位作者 Tang Bihua Liu Yuan'an 《The Journal of China Universities of Posts and Telecommunications》 EI CSCD 2016年第1期91-96,共6页
A novel design of high-efficiency broadband power amplifier (BPA) with the low-pass bias networkto enhance the efficiency and output power is presented in this paper. Compared with other bias networks, the proposed ... A novel design of high-efficiency broadband power amplifier (BPA) with the low-pass bias networkto enhance the efficiency and output power is presented in this paper. Compared with other bias networks, the proposed low-pass bias network shows a smaller baseband impedance, which can reduce the electrical memory effect. While it provides a larger radio frequency (RF) impedance, which can prevent the leakage of the output power from bias network. A BPA with the proposed bias network is designed using commercial GaN device Cree40025F. The designed BPA shows a fractional bandwidth of 40%, from 1.8 GHz to 2.7 GHz. The measured results exhibit 73.9 % drain efficiency (DE) value with output power of 43.5 dBm at 2.7 GHz, which appears an enhancement of 9.5% and 2.5 dBm comparing with that adopts LC bias network. 展开更多
关键词 broadband power amplifier low-pass bias network high-efficiency BROADBAND
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元件模拟MOSFET-C连续时间滤波器的设计
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作者 郑书铭 奚柏清 《南京邮电学院学报》 北大核心 1993年第2期77-82,共6页
本文在MOGFET-C有源元件的基础上,利用嵌入技术设计出各种元件模拟MOS-FET-c连续时间滤波器及其改进型电路,并导出了全平衡结掏,完善了这类滤波器的设计方法。
关键词 高通滤波器 低通滤波器 有源网络
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0.8~3.2 GHz 6 bit MMIC数字移相器的设计与实现 被引量:1
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作者 王坤 周宏健 +2 位作者 周睿涛 李光超 苏郁秋 《半导体技术》 CAS 北大核心 2022年第4期320-324,共5页
基于0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款0.8~3.2 GHz高精度6 bit单片微波集成电路(MMIC)数字移相器。该移相器的5.625°、11.25°和22.5°移相单元采用开关选择型全通/T型低通网络拓扑结构,45°... 基于0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款0.8~3.2 GHz高精度6 bit单片微波集成电路(MMIC)数字移相器。该移相器的5.625°、11.25°和22.5°移相单元采用开关选择型全通/T型低通网络拓扑结构,45°、90°和180°移相单元采用开关选择型全通网络(APN)拓扑结构。通过在APN两侧增加串联电容,在两级APN之间增加高通网络(HPN)及简化APN结构实现了芯片的高移相精度和小型化。移相器驱动单元采用直接耦合场效应晶体管逻辑(DCFL)结构。测试结果表明:在0.8~3.2 GHz频率范围内插入损耗小于18 dB,移相态的均方根(RMS)相位误差小于4.5°,移相寄生调幅小于±1 dB,输入电压驻波比(VSWR)小于1.7,输出VSWR小于1.9。芯片尺寸为5.0 mm×2.0 mm×0.1 mm。 展开更多
关键词 移相器 GaAs 赝配高电子迁移率晶体管(PHEMT) 超宽带(UWB) 高精度 全通网络(APN) 低通网络(LPN)
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C-band 6-bit phase shifter for a phase array antenna 被引量:2
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作者 杨小峰 史江义 《Journal of Semiconductors》 EI CAS CSCD 2013年第4期112-115,共4页
A C-band 6-bit digital phase shifter is presented. The phase shifter is based on the synthetic design of a high-pass/low-pass network and the all-pass network. The series scatter restrain method is also discussed. The... A C-band 6-bit digital phase shifter is presented. The phase shifter is based on the synthetic design of a high-pass/low-pass network and the all-pass network. The series scatter restrain method is also discussed. The phase shifter is fabricated in 0.25/zm GaAs PHEMT technology and developed for C-band phased arrays, and the relative phase shift varies from 0 to 360 in step of 5.625°. The phase shifter, with a chip size of 4 × 1.95 mm2, has achieved an insertion loss better than 6.4 dB, RMS phase error of less than 1.73°, and an input and output VSWR less than 1.6 at all conditions. 展开更多
关键词 MMIC high-pass/low-pass network all-pass network series scatter restrain
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同轴电缆之上的802.11无线网络 被引量:1
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作者 李峰 陶洋 李牧 《通信技术》 2008年第8期139-140,143,共3页
在文中介绍并实现了一种新的高带宽应用和服务的无线局域网,即一种使用同轴电缆传输WIFI信号的无线局域网。该无线网络仍然使用现有的802.11标准,数据传输速率最高可达54 Mb/s,同时有有效的QOS机制和安全机制,完全可以保证其实用性。研... 在文中介绍并实现了一种新的高带宽应用和服务的无线局域网,即一种使用同轴电缆传输WIFI信号的无线局域网。该无线网络仍然使用现有的802.11标准,数据传输速率最高可达54 Mb/s,同时有有效的QOS机制和安全机制,完全可以保证其实用性。研发它的关键点是设计一种能够利用有线电视同轴电缆实现无线宽带信号接入的分配/混合电路,这种混合/分配电路由高频信号分配/混合电路、高通滤波电路和低通滤波电路构成。设计完成后我们对设计出来的电路进行了简单的实际效果测试。 展开更多
关键词 无线网络 IEEE802.11 高通滤波 低通滤波 同轴电缆
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A highly linear baseband G_m-C filter for WLAN application
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作者 杨利君 龚正 +1 位作者 石寅 陈治明 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第9期112-118,共7页
A low voltage,highly linear transconductance-C(G_m-C) low-pass filter for wireless local area network (WLAN) transceiver application is proposed.This transmitter(Tx) filter adopts a 9.8 MHz 3rd-order Chebyshev l... A low voltage,highly linear transconductance-C(G_m-C) low-pass filter for wireless local area network (WLAN) transceiver application is proposed.This transmitter(Tx) filter adopts a 9.8 MHz 3rd-order Chebyshev low pass prototype and achieves 35 dB stop-band attenuation at 30 MHz frequency.By utilizing pseudo-differential linear-region MOS transconductors,the filter IIP_3 is measured to be as high as 9.5 dBm.Fabricated in a 0.35μm standard CMOS technology,the proposed filter chip occupies a 0.41×0.17 mm^2 die area and consumes 3.36 mA from a 3.3-V power supply. 展开更多
关键词 wireless local area network transconductance-C low-pass filter LINEARITY linear-region MOS transconductors pseudo-differential transconductors
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