An in-situ self-etching enabled high-power electrode for aqueous zinc-ion batteries

Sluggish storage kinetics is considered as the main bottleneck of cathode materials for fast-charging aqueous zinc-ion batteries(AZIBs).In this report,we propose a novel in-situ self-etching strategy to unlock the Palm tree-like vanadium oxide/carbon nanofiber membrane(P-VO/C)as a robust freestanding electrode.Comprehensive investigations including the finite element simulation,in-situ X-ray diffraction,and in-situ electrochemical impedance spectroscopy disclosed it an electrochemically induced phase transformation mechanism from VO to layered Zn_(x)V_(2)O_5·nH_(2)O,as well as superior storage kinetics with ultrahigh pseudocapacitive contribution.As demonstrated,such electrode can remain a specific capacity of 285 mA h g^(-1)after 100 cycles at 1 A g^(-1),144.4 mA h g^(-1)after 1500 cycles at 30 A g^(-1),and even 97 mA h g^(-1)after 3000 cycles at 60 A g^(-1),respectively.Unexpectedly,an impressive power density of 78.9 kW kg^(-1)at the super-high current density of 100 A g^(-1)also can be achieved.Such design concept of in-situ self-etching free-standing electrode can provide a brand-new insight into extending the pseudocapacitive storage limit,so as to promote the development of high-power energy storage devices including but not limited to AZIBs.

Controllable thermal rectification design for buildings based on phase change composites

Phase-change material(PCM)is widely used in thermal management due to their unique thermal behavior.However,related research in thermal rectifier is mainly focused on exploring the principles at the fundamental device level,which results in a gap to real applications.Here,we propose a controllable thermal rectification design towards building applications through the direct adhesion of composite thermal rectification material(TRM)based on PCM and reduced graphene oxide(rGO)aerogel to ordinary concrete walls(CWs).The design is evaluated in detail by combining experiments and finite element analysis.It is found that,TRM can regulate the temperature difference on both sides of the TRM/CWs system by thermal rectification.The difference in two directions reaches to 13.8 K at the heat flow of 80 W/m^(2).In addition,the larger the change of thermal conductivity before and after phase change of TRM is,the more effective it is for regulating temperature difference in two directions.The stated technology has a wide range of applications for the thermal energy control in buildings with specific temperature requirements.

Numerical Investigation on Thermal Performance of Two-Phase Immersion Cooling Method for High-Power Electronics

The power density of electronic components grows continuously,and the subsequent heat accumulation and temperature increase inevitably affect electronic equipment’s stability,reliability and service life.Therefore,achieving efficient cooling in limited space has become a key problem in updating electronic devices with high performance and high integration.Two-phase immersion is a novel cooling method.The computational fluid dynamics(CFD)method is used to investigate the cooling performance of two-phase immersion cooling on high-power electronics.The two-dimensional CFD model is utilized by the volume of fluid(VOF)method and Reynolds StressModel.Lee’s model was employed to calculate the phase change rate.The heat transfer coefficient along the heatedwalls and the shear-lift force on bubbles are calculated.The simulation data are verified with the literature results.The cooling performance of different coolants has been studied.The results indicate that the boiling heat transfer coefficient can be enhanced by using a low boiling point coolant.The methanol is used as the cooling medium for further research.In addition,the mass flow rate and inlet temperature are investigated to assess the thermal performance of twophase immersion cooling.The average temperature of the high-power electronics is 80℃,and the temperature difference can be constrained to 8℃.Meanwhile,the convective heat transfer coefficient reaches 2740 W/(m2・℃)when the inlet temperature is 50℃,and the mass flow rate is 0.3 kg/s.In conclusion,the results demonstrated that two-phase immersion cooling has provided an effective method for the thermal management of high-power electronics.

Applications of Wide Bandgap Semiconductor Materials in High-Power Electronic Devices

Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems.

Analysis of high-power disk laser welding stability based on classification of plume and spatter characteristics

Classification of plume and spatter images was studied to evaluate the welding stability. A high-speed camera was used to capture the instantaneous images of plume and spatters during high power disk laser welding. Characteristic parameters such as the area and number of spatters, the average grayscale of a spatter image, the entropy of a spatter grayscale image, the coordinate ratio of the plume centroid and the welding point, the polar coordinates of the plume centroid were defined and extracted. Karhunen-Loeve transform method was used to change the seven characteristics into three primary characteristics to reduce the dimensions. Also, K-nearest neighbor method was used to classify the plume and spatter images into two categories such as good and poor welding quality. The results show that plume and spatter have a close relationship with the welding stability, and two categories could be recognized effectively using K-nearest neighbor method based on Karhunen-Loeve transform.

Effect of flame rectification on corrosion property of Al-Zn-Mg alloy

The corrosion resistance of Al？Zn？Mg alloy subjected to different times in flame rectification was investigated based on the exfoliation corrosion test. The results indicate that the flame rectification deteriorates the exfoliation corrosion resistance of Al？Zn？Mg alloy. The corrosion resistance of Al-Zn-Mg alloy is ranked in the following order： base metal〉two times〉three times〉one time of flame rectification. The exfoliation corrosion behavior was discussed based on the transformation of precipitates at grain boundaries and matrix. With increasing the number of times in flame rectification, the precipitate-free zones disappeared and the precipitates experienced dissolution and re-precipitation. The sample was seriously corroded after one time of flame rectification, because the precipitates at grain boundaries are more continuous than those in other samples.

Relationship between rectification moment and angle of shield based on numerical simulation

The finite element method is used to simulate the rectification process of shield machine, to study the relationship between rectification moment and angle and to explore the influence laws of different soil parameters and buried depth on rectification moment. It is hoped that the reference value of rectification moment can be offered to operator, and theoretical foundation can be laid for future automatic rectification technology. The results show that the rectification moment and angle generally exhibit good linear behavior in clay layers with different soil parameters or buried depths, and then the concept of rectification coefficient, that is, the ratio of rectification angle to rectification moment, is proposed; different soil parameters and buried depths have different influences on rectification coefficient, in which elastic modulus has great influence but others have little influences; the simulations of rectification process are preformed in clay layers with different elastic modulus, and fitting results show that elastic modulus and rectification coefficient present the quadratic function relation.

Polaron effect on the optical rectification in spherical quantum dots with electric field

The polaron effect on the optical rectification in spherical quantum dots with a shallow hydrogenic impurity in the presence of electric field is theoretically investigated by taking into account the interactions of the electrons with both confined and surface optical phonons. Besides, the interaction between impurity and phonons is also considered. Numerical calculations are presented for typical Zn1-xCdxSe/ZnSe material. It is found that the polaronic effect or electric field leads to the redshifted resonant peaks of the optical rectification coefficients. It is also found that the peak values of the optical rectification coefficients with the polaronic effect are larger than without the polaronic effect, especially for smaller Cd concentrations or stronger electric field.

Optical Rectification Induced by Al-Si Schottky Barrier Potential and Mechanism of Two-Photon Response

By observing two-photon response and anisotropy of the light-induced voltage in Al-Si Schottky barrier potential,it is certified from the experimental and theoretical analysis that the built-in electric field generated by the Schottky barrier potential will induce the phenomena of optical rectification in Si photodiode.Thus,it is deduced that there must be double-frequency absorption caused by phase-mismatch in the mechanism of two-photon response of Si photodiode.If the intensity of the built-in electric field is strong enough,the double-frequency absorption will be the main factor of the two-photon response,which is different from the conventional opinion that the two-photon response is just the two-photon absorption.

Impact of GCP distribution on the rectification accuracy of Landsat TM imagery in a coastal zone

The purpose is to explore the effect of the spatial distribution of ground control points （GCPs） on the accuracy of imagery rectification. Both area-distributed and linearly distributed GCPs were used to rectify a Landsat TM image of a coastal zone. Rectification accuracy was checked against 99 independent points over the intertidal mudflats with no ground control. Results indicate that the root-mean-square error of residuals over these areas is several times larger than its GCPs-measured counterpart. If the GCPs are spatially dispersed over an area, residuals fluctuate but increase steadily with distance to the source of control in easting （R^2= 0. 827）. in northing they fluctuate around 150 m until 15 km, beyond which they rise steadily at a small range of fluctuation. These residuals are less predictable from distance to the source of control than in easting （R^2= 0.517 ）. If the GCPs are distributed along a control line, residuals rise with distance to it linearly and predictably （R^2 = 0. 877） in the direction perpendicular to it. In a direction parallel to it, the distance has little impact on rectification residuals.

NEW VERSATILE CAMERA CALIBRATION TECHNIQUE BASED ON LINEAR RECTIFICATION

A new versatile camera calibration technique for machine vision usingoff-the-shelf cameras is described. Aimed at the large distortion of the off-the-shelf cameras, anew camera distortion rectification technology based on line-rectification is proposed. Afull-camera-distortion model is introduced and a linear algorithm is provided to obtain thesolution. After the camera rectification intrinsic and extrinsic parameters are obtained based onthe relationship between the homograph and absolute conic. This technology needs neither ahigh-accuracy three-dimensional calibration block, nor a complicated translation or rotationplatform. Both simulations and experiments show that this method is effective and robust.

Sliding mode robust controller for automatic rectification of shield machine

According to the actual engineering problem that the precise load model of shield machine is difficult to achieve,a design method of sliding mode robust controller oriented to the automatic rectification of shield machine was proposed. Firstly,the nominal load model of shield machine and the ranges of model parameters were obtained by the soil mechanics parameters of certain geological conditions and the messages of the self-learning of shield machine by tunneling for previous segments. Based on this rectification mechanism model with known ranges of parameters,a sliding mode robust controller was proposed. Finally,the simulation analysis was developed to verify the effectiveness of the proposed controller. The simulation results show that the sliding mode robust controller can be implemented in the attitude rectification process of the shield machine and it has stronger robustness to overcome the soil disturbance.

Three-dimensional simulation method of multipactor in microwave components for high-power space application

Based on the particle-in-cell technology and the secondary electron emission theory, a three-dimensional simulation method for multipactor is presented in this paper. By combining the finite difference time domain method and the panicle tracing method, such an algorithm is self-consistent and accurate since the interaction between electromagnetic fields and particles is properly modeled. In the time domain aspect, the generation of multipactor can be easily visualized, which makes it possible to gain a deeper insight into the physical mechanism of this effect. In addition to the classic secondary electron emission model, the measured practical secondary electron yield is used, which increases the accuracy of the algorithm. In order to validate the method, the impedance transformer and ridge waveguide filter are studied. By analyzing the evolution of the secondaries obtained by our method, multipactor thresholds of these components are estimated, which show good agreement with the experimental results. Furthermore, the most sensitive positions where multipactor occurs are determined from the phase focusing phenomenon, which is very meaningful for multipactor analysis and design.

Ti-containing hydrogenated carbon films fabricated by high-power plasma magnetron sputtering

To improve the characteristics of a diamond-like carbon （DLC） film, Ti-containing amorphous hydrogenated carbon thin films were deposited on sus304 stainless steel substrates by high-power plasma-sputtering with titanium metal as the solid plasma source in a mixed ArC2H2 atmosphere. The films were fabricated to obtain a multilayered structure of Ti/TiC/DLC gradient for improving adhesion and reducing residual stress. The effects of substrate bias and target-substrate distance on the films＇ properties were studied by glow discharge spectroscope, X-ray diffractometer, Raman spectroscope, nanoindenter, and a pin-on-disk tribometer. The results indicate that the films possess superior adhesive strength and toughness.

The First Principle Study on the Rectification of Molecular Junctions Based on the Alkyl-chain-modified Phenyl Benzothiophene Derivative

Using density functional theory（DFT） combined with nonequilibrium Green＇s function investigates the electron-transport properties of several molecular junctions based on the PBTDT-CH=NH molecule, which is modified by one to four alkyl groups forming PBTDT-（CH2）nCH=NH. The electronic structures of the isolated molecules（thiol-ended PBTDT-（CH2）nCH=N） have been investigated before the electron-transport calculations are performed. The asymmetric current-voltage characteristics have been obtained for the molecular junctions. Rectifying performance of Au/S-PBTDT-CH=N-S/Au molecular junction can be regulated by introducing alkyl chain. The N3 molecular junction exhibits the best rectifying effect. Its maximum rectifying ratio is 878, which is 80 times more than that of the molecular junction based on the original N molecular junction. The current-voltage（I-V） curves of all the sandwich systems in this work are illustrated by transmission spectra and molecular projection density analysis.

Rectification of magnetic force tracker using neural network inaugmented reality system

Nonlinear errors always exist in data obtained from tracker in augmented reality （AR）, which badly influence the effect of AR. This paper proposes to rectify the errors using BP neural network. As BP neural network is prone to getting into local extrema and convergence is slow, genetic algorithm is employed to optimize the initial weights and threshold of neural network. This paper discusses how to set the crucial parameters in the algorithm. Experimental results show that the method ensures that the neural network achieves global convergence quickly and correctly. Tracking precision of AR system is improved after the tracker is rectified, and the third dimension of AR system is enhanced.

Effect of proportion on rectification in organic co-oligomer spin rectifiers

The rectification behaviours in organic magnetic/nonmagnetic co-oligomer spin rectifiers are investigated theoretically. It is found that both the charge current and the spin current through the device are rectified at the same time. By adjusting the proportion between the magnetic and nonmagnetic components, the threshold voltage and the rectification ratio of the rectifier are modulated. A large rectification ratio is obtained when the two components are equal in length. The intrinsic mechanism is analysed in terms of the asymmetric localization of molecular orbitals under biases. The effect of molecular length on the rectification is also discussed. These results will be helpful in the future design of organic spin diodes.

Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

A GaN/Si nanoheterojunction is prepared through growing Ga N nanocrystallites（nc-GaN） on a silicon nanoporous pillar array（Si-NPA） by a chemical vapor deposition（CVD） technique at a relatively low temperature. The average size of nc-Ga N is determined to be ~10 nm. The spectral measurements disclose that the photoluminescence（PL） from GaN/SiNPA is composed of an ultraviolet（UV） band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence（EL）. The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of Ga N is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current（SCLC） model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.

First Principle Study on the Rectification of Molecular Junctions Based on the Thiol-ended Oligosilane

The electron transport properties of various molecular junctions based on the thiol-ended oligosilane are investigated through density functional theory combined with non-equilibrium Green＇s function formalism. Our calculations show that oligosilanes doped by the phenyl and -C10H6 groups demonstrate better rectifying effect and their rectification ratios are up to 15.41 and 65.13 for their molecular junctions. The current-voltage （I-V） curves of all the Au/ modified oligosilane/Au systems in this work are illustrated by frontier molecular orbitals, transmission spectra and density of states under zero bias. And their rectifying behaviors are analyzed through transmission spectra.

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.