A polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa

A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain （LDD） nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection （LGVHHI）, gate-induced drain leakage induced hot-hole injection （GIDLIHHI） and substrate hot-hole injection （SHHI）, have different influences on the devices damaged already by the previous hot electron injection （HEI） because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device＇s performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride （PTCDA） doped N,N＇-di（1-naphthyl）- N,N＇-diphenylbenzidine （NPB）, has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m2, the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.

Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer

We improve the performance of organic light-emitting diodes （OLEDs） with both a MoO3 hole injection layer （HIL） and a MoO3 doped hole transport layer （HTL）, and present a systematical and comparative investigation on these devices. Compared with OLEDs with only MoO3 HIL or MoO3 doped HTL, OLEDs with both MoO3 HIL and MoO3 doped HTL show superior performance in driving voltage, power efficiency, and stability. Based on the typical NPB/Alq3 heterojunction structure, OLEDs with both MoO3 HIL and MoO3 doped HTL show a driving voltage of 5.4 V and a power efficiency of 1.41 lm/W for 1000 cd/m2, and a lifetime of around 0. 88 h with an initial luminance of 5268 cd/m2 under a constant current of 190 mA/cm2 operation in air without encapsulation. While OLEDs with only MoO3 HIL or MoO3 doped HTL show higher driving voltages of 6.4 V or 5.8 V and lower power efficiencies of 1.201m/W or 1.341m/W for 1000cd/m2, and a shorter lifetime of 0.33 or 0.60h with an initial luminance of around 5122 or 5300cd/m2 under a constant current of 200 or 216mA/cm2 operation. Our results demonstrate clearly that using both MoO3 HIL and MoO3 doped HTL is a simple and effective approach to simultaneoasly improve both the hole injection and transport efficiency, resulting from the lowered energy barrier at the anode interface and the increased hole carrier density in MoO3 doped HTL.

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene

We chose pentacene as a hole injection layer（HIL） to fabricate the high performance blue fluorescent organic lightemitting devices（OLEDs）. We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer（ETL） presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.

Trench gate GaN IGBT with controlled hole injection efficiency

In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.

Enhanced Hole-Injection Property in an OLED with a Self-assembled Monolayer of Hole-Transporting TPD on Thin Au as the Anode

A thioester-functionalized triphenylamine hole-transporting molecule （TPD-SAc） was synthesized and self-assembled to form a monolayer on an ultra-thin Au film supported on indium-tin oxide glass. The modified surface was characterized by aqueous contact angle, ellipsometer, atomic force microscopy, X-ray photoelectron spectroscopy, and ultraviolet pho- toelectron spectrometer to substantiate the formation of compact and pinhole-free monolayers. The modified organic light emitting diode device [indium-tin oxide/Au （5 nm）/self-assembled monolayers （SAM）/TPD （50 nm）/Alq3 （40 nm）/TPBI （15 nm）/LiF （1 nm）/A1 （100 nm）] showed a luminance of 7303.90 cd/m^2 and a current efficiency of 8.49 cd/A with 1.78 and 2.29-fold increase, respectively, compared to the control device without SAM. The improvements were attributed to the enhanced compatibility of the organic-inorganic interface, matched energy level by introduction of an energy mediating step and superior hole-injection property of SAM molecules.

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes[Invited]

The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers[VCSELs]to enhance the laser power.In this work,we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection.The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes,which can improve the thermionic emission proc-ess for holes to travel across the p-type electron blocking layer[p-EBL].Besides,the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer.Therefore,the better stimulated radiative recombination rate and the increased laser power are obtained,thus enhancing the 3 dB frequency bandwidth.Moreover,we also inves-tigate the impact of the p-AlGaN/p-GaN structure with various AIN compositions in the p-AlGaN layer on the hole injection capabilit,the laser power,and the了dB frequency bandwidth.

Macular hole closure following anti-vascular endothelial growth factor injection in an eye with myopic choroidal neovascularization

Dear Editor,I am Cheolmin Yun,from the Department of Ophthalmology,Korea University College of Medicine.I write to present a case report of a female patient with a myopic patient suffering from atrophic choroidal neovascularization（CNV）and a full thickness macular hole（FTMH）,who was treated with an intravitreal anti-vascular endothelial growth factor （VEGF） injection without vitrectomy.

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.

Accelerating directional charge separation via built-in interfacial electric fields originating from work-function differences

In this work,a hierarchical porous SnS_(2)/rGO/TiO_(2)hollow sphere heterojunction that allows highly-efficient light utilization and shortening distance of charge transformation is rationally designed and synthesized.More importantly,an rGO interlayer is successfully embedded between the TiO_(2)hollow sphere shells and outermost SnS_(2)nanosheets.This interlayer functions as a bridge to connect the two light-harvesting semiconductors and acts as a hole injection layer in the tandem heterojunction.The induced built-in electric fields on both sides of the interface precisely regulate the spatial separation and directional migration of the photo-generated holes from the light-harvesting semiconductor to the rGO hole injection interlayer.These synergistic effects greatly prolong the lifetime of the photo-induced charge carriers.The optimized tandem heterojunction with a 2 wt%rGO loading demonstrate enhanced visible-light-driven photocatalytic activity for Rhodamine B(RhB)dye degradation(removal rate:97.3%)and Cr(VI)reduction(removal rate:97.09%).This work reveals a new strategy for the rational design and assembly of hollow-structured photocatalytic materials with spatially separated reduction and oxidation surfaces to achieve excellent photocatalytic performance.

Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers

GaN-based multiple quantum well light-emitting diodes （LEDs） with conventional and superlattice barriers have been investigated numerically. Simulation results demonstrate using InGaN/GaN superlattices as barriers can effectively enhance performances of the GaN-Based LEDs, mainly owing to the improvement of hole injection and transport among the MQW active region. Meanwhile, the improved electron capture decreases the electron leakage and alleviates the efficiency droop. The weak polarization field induced by the superlattice structure strengthens the intensity of the emission spectrum and leads to a blue-shift relative to the conventional one.

Influence of Endwall Air Injection with Discrete Holes on Corner Separation of a Compressor Cascade

The aim of this study is to reveal the influence mechanism of endwall air injection with distributed holes on the corner separation of a highly loaded compressor cascade,so as to promote the application of injection in aero-engines.Single-hole and double-hole endwall injection schemes featuring different axial locations,pitchwise locations,injection mass rates and injection directions,were designed and investigated.Results showed that the corner separation was eliminated by endwall injection;the optimal single-hole injection scheme achieved an endwall loss coefficient reduction of 29.7%,with injection coefficient as low as 0.48%.The optimal axial location of single-hole endwall injection was at 82%axial chord,being the center of corner separation.However,as injection hole was located at upstream of it,endwall injection resulted in severer corner separation.The mid-span flow field was deteriorated after endwall injection,which was due to 3D flow effects,i.e.,AVDR(axial velocity density ratio)effect and low-momentum fluid spanwise migration effect.The optimal injection was achieved at low injection angle and from close to the suction surface on pitchwise.Double-hole injection exhibited inferior performance compared with single-hole,which was due to the interaction of the two injection streams and mixing of injection streams with the bulk stream.

Increased work function in PEDOT:PSS film under ultraviolet irradiation

An increase of work function （0.3 eV） is achieved by irradiating poly（3,4-ethylenedioxythiophene）：poly（styrene sul- fonate） （PEDOT：PSS） film in vacuum with 254-nm ultraviolet （UV） light. The mechanism for such an improvement is investigated by photoelectron yield spectroscopy, X-ray photo electron energy spectrum, and field emission technique. Sur- face oxidation and composition change are found as the reasons for work function increase. The UV-treated PEDOT：PSS film is used as the hole injection layer in a hole-only device. Hole injection is improved by UV-treated PEDOT：PSS film without baring the enlargement of film resistance. Our result demonstrates that UV treatment is more suitable for modifying the injection barrier than UV ozone exposure.

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

In this work,GaN-based light-emitting diodes(LEDs) with a p-GaN/i-InGaN short-period superlattice(SPSL) structure,p-GaN and undoped GaN last quantum barrier(LQB) have been numerically investigated by using the APSYS simulation software.It has been found that the efficiency droop is significantly improved when the undoped GaN LQB in a typical blue LED is replaced by a p-GaN/i-InGaN SPSL structure.According to the simulation analysis,using the p-GaN/i-InGaN SPSL structure as LQB is beneficial to increasing the hole injection efficiency and decreasing the electron current leakage.Therefore,the radiative recombination and optical power are enhanced.

Enhanced chemiluminescence from reactions between CdTe/CdS/ZnS quantum dots and periodate

A novel chemiluminescence（CL） performance of CdTe/CdS/ZnS quantum dots（QDs） with periodate（KIO_4） was studied.Effects of concentration and pH on the CL system were investigated.Electron spin resonance（ESR） and the effects of radical scavenger analysis were employed for identification of intermediate species.The CL spectra for this system showed only one maximum emission peak centered around 620 nm,which was similar with photoluminescence（PL） spectra of CdTe/CdS/ZnS QDs.The CL of CdTe/CdS/ZnS QDs was induced by direct chemical oxidation and the possible mechanism could be explained by radiative recombination of injected holes and electrons.This investigation not only provided new sight into the optical characteristics of CdTe/CdS/ZnS QDs,but also broadened their potential optical utilizations.

Improvement of carrier distribution in dual wavelength light-emitting diodes

The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.