Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G&...Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G°=-2RTln(1.088×10~8-1.09×10^(11)·1/T) These seem to be applicable into practice under certain conditions.展开更多
Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it i...Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.展开更多
In recent years, the formate ion （HCO2^-） as a kind of hole-to-electron converter has attracted much attention of photographic researchers. The formate ions can trap photo-generated holes, eliminate or reduce the el...In recent years, the formate ion （HCO2^-） as a kind of hole-to-electron converter has attracted much attention of photographic researchers. The formate ions can trap photo-generated holes, eliminate or reduce the electron loss caused by electron-hole recombination in latent image formation process. Through the hole-to-electron conversion, it can also release an extra electron or electron carrier, improving photosensitivity. In this paper the microwave absorption and dielectric spectrum detection technique is used to detect the time evolution behaviour of free photoelectrons generated by 35ps laser pulses in cubic AgCl emulsions doped with formate ions. The influence of different doping conditions of formate ions on the photoelectron decay kinetics of AgC1 is analysed. It is found that when the HCO2^- content is 10^-3mol/mol Ag and the doping position is 90% the electron decay time and lifetime reach their maxima due to the efficient trap of holes by formate ions.展开更多
文摘Equilibrium constant K_T and free energy of formation △G°of the reaction (Ga_(As)As_(Ga)+(V_(Ga))(2|-)+(e|-)=As_(Ga)V(G|-)a+Ga_(As)V(G|-)a were deduced as: K_T=(1.088×10~8-1.09×10^(11)·1/T)~2 △G°=-2RTln(1.088×10~8-1.09×10^(11)·1/T) These seem to be applicable into practice under certain conditions.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10274017 and 10354001）, and the Natural Science Foundation of Hebei Province, China （Grant Nos 103097 and 603138）.
文摘Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10354001, 60478033, and 10274017）, the Natural Science Foundation of Hebei Province of China （Grant No 603138） and the Doctorate Foundation of Hebei Province of China （Grant No B2003119）.
文摘In recent years, the formate ion （HCO2^-） as a kind of hole-to-electron converter has attracted much attention of photographic researchers. The formate ions can trap photo-generated holes, eliminate or reduce the electron loss caused by electron-hole recombination in latent image formation process. Through the hole-to-electron conversion, it can also release an extra electron or electron carrier, improving photosensitivity. In this paper the microwave absorption and dielectric spectrum detection technique is used to detect the time evolution behaviour of free photoelectrons generated by 35ps laser pulses in cubic AgCl emulsions doped with formate ions. The influence of different doping conditions of formate ions on the photoelectron decay kinetics of AgC1 is analysed. It is found that when the HCO2^- content is 10^-3mol/mol Ag and the doping position is 90% the electron decay time and lifetime reach their maxima due to the efficient trap of holes by formate ions.
