1.IntroductionRecently,progress of vapour phasegrowth of diamond fihn under non-equilib-rium reaction condition has shown theprospect of its commercial production in re-spect of effectiveness and economy.Theprocess pr...1.IntroductionRecently,progress of vapour phasegrowth of diamond fihn under non-equilib-rium reaction condition has shown theprospect of its commercial production in re-spect of effectiveness and economy.Theprocess proceeds in the thermodynamical展开更多
Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arra...Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arranged is investigated.The self-supported diamond tubes are obtained by etching away the tungsten substrates.The quality of the diamond film before and after the removal of substrates is observed by scanning electron microscope（SEM）and Raman spectrum.The results show that the cylindrical diamond tubes with good quality and uniform thickness are obtained on tungsten wires by using bias enhanced hot filament CVD.The compressive stress in diamond film formed during the deposition is released after the substrate etches away by mixture of H2O2 and NH4 OH.There is no residual stress in diamond tube after substrate removal.展开更多
A sheet plasma is generated by a mesh anode and a single hot-filament cathode with a DC power supply, and its characteristics are experimentally investigated. The sheet plasma is observed to locate around the anode. B...A sheet plasma is generated by a mesh anode and a single hot-filament cathode with a DC power supply, and its characteristics are experimentally investigated. The sheet plasma is observed to locate around the anode. Both electron density and electron temperature derived from the average energy of the energetic electrons in nitrogen are estimated to be 10s cm^-3 and 20- 40 eV, respectively, using the optical emission spectroscopy （OES） method based on a kinetic model of low-pressure nitrogen discharge. The electron density, electron temperature and their spatial distributions are found to be affected by the supplying voltage on the anode（70 V to 300 V）, filament temperature （600℃ to 780℃） and gas pressure （2 Pa to 20 Pa）. By adjusting these parameters the discharge status can be easily controlled.展开更多
In a steady-state plasma,the loss rate of plasma particles to the chamber wall and surfaces in contact with plasma is balanced by the ionization rate of background neutrals in the hot-filament discharges.The balance b...In a steady-state plasma,the loss rate of plasma particles to the chamber wall and surfaces in contact with plasma is balanced by the ionization rate of background neutrals in the hot-filament discharges.The balance between the loss rate and ionization rate of plasma particles(electrons and ions)maintains quasi-neutrality of the bulk plasma.In the presence of an external perturbation,it tries to retain its quasi-neutrality condition.In this work,we studied how the properties of bulk plasma are affected by an external DC potential perturbation.An auxiliary biased metal disk electrode was used to introduce a potential perturbation to the plasma medium.A single Langmuir probe and an emissive probe,placed in the line of the discharge axis,were used for the characterization of the bulk plasma.It is observed that only positive bias to the auxiliary metal disk increases the plasma potential,electron temperature,and plasma density but these plasma parameters remain unaltered when the disk is biased with a negative potential with respect to plasma potential.The observed plasma parameters for two different-sized,positively as well as negatively biased,metal disks are compared and found inconsistent with the existing theoretical model at large positive bias voltages.The role of the primary energetic electrons population in determining the plasma parameters is discussed.The experimentally observed results are qualitatively explained on the basis of electrostatic confinement arising due to the loss of electrons to a biased metal disk electrode.展开更多
In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant is hydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless number...In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant is hydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless numbers for heat and mass transfer reveals that thermal conduction and diffusion are the dominant mechanisms for gas-phase heat and mass transfer, respectively. A simplified model has been established to simulate gas-phase temperature and H concentration distributions between the filament and the substrate. Examination of the relative importance of homogeneous and heterogeneous production of H atoms indicates that filament-surface decomposition of molecular hydrogen is the dominant source of H and gas-phase reaction plays a negligible role. The filament-surface dissociation rates of H2 for various filament temperatures were calculated to match H-atom concentrations observed in the literature or derived from power consumption by filaments. Arrhenius plots of the filament-surface hydrogen dissociation rates suggest that dissociation of H2 at refractory filament surface is a catalytic process, which has a rather lower effective activation energy than homogeneous thermal dissociation. Atomic hydrogen, acting as an important heat transfer medium to heat the substrate, can freely diffuse from the filament to the substrate without recombination.展开更多
文摘1.IntroductionRecently,progress of vapour phasegrowth of diamond fihn under non-equilib-rium reaction condition has shown theprospect of its commercial production in re-spect of effectiveness and economy.Theprocess proceeds in the thermodynamical
基金Selected from Proceedings of the 7th International Conference on Frontiers of Design and Manufacturing(ICFDM'2006)This project is supported by National Natural Science Foundation of China(No.50475026,No.50275095,No.50575135).
文摘Deposition of diamond thin films on tungsten wire substrate with the gas mixture of acetone and hydrogen by using bias-enhanced hot filament chemical vapor deposition（CVD）with the tantalum wires being optimized arranged is investigated.The self-supported diamond tubes are obtained by etching away the tungsten substrates.The quality of the diamond film before and after the removal of substrates is observed by scanning electron microscope（SEM）and Raman spectrum.The results show that the cylindrical diamond tubes with good quality and uniform thickness are obtained on tungsten wires by using bias enhanced hot filament CVD.The compressive stress in diamond film formed during the deposition is released after the substrate etches away by mixture of H2O2 and NH4 OH.There is no residual stress in diamond tube after substrate removal.
基金supported by National Defence Research Foundation of China (No.A1420060181)
文摘A sheet plasma is generated by a mesh anode and a single hot-filament cathode with a DC power supply, and its characteristics are experimentally investigated. The sheet plasma is observed to locate around the anode. Both electron density and electron temperature derived from the average energy of the energetic electrons in nitrogen are estimated to be 10s cm^-3 and 20- 40 eV, respectively, using the optical emission spectroscopy （OES） method based on a kinetic model of low-pressure nitrogen discharge. The electron density, electron temperature and their spatial distributions are found to be affected by the supplying voltage on the anode（70 V to 300 V）, filament temperature （600℃ to 780℃） and gas pressure （2 Pa to 20 Pa）. By adjusting these parameters the discharge status can be easily controlled.
文摘In a steady-state plasma,the loss rate of plasma particles to the chamber wall and surfaces in contact with plasma is balanced by the ionization rate of background neutrals in the hot-filament discharges.The balance between the loss rate and ionization rate of plasma particles(electrons and ions)maintains quasi-neutrality of the bulk plasma.In the presence of an external perturbation,it tries to retain its quasi-neutrality condition.In this work,we studied how the properties of bulk plasma are affected by an external DC potential perturbation.An auxiliary biased metal disk electrode was used to introduce a potential perturbation to the plasma medium.A single Langmuir probe and an emissive probe,placed in the line of the discharge axis,were used for the characterization of the bulk plasma.It is observed that only positive bias to the auxiliary metal disk increases the plasma potential,electron temperature,and plasma density but these plasma parameters remain unaltered when the disk is biased with a negative potential with respect to plasma potential.The observed plasma parameters for two different-sized,positively as well as negatively biased,metal disks are compared and found inconsistent with the existing theoretical model at large positive bias voltages.The role of the primary energetic electrons population in determining the plasma parameters is discussed.The experimentally observed results are qualitatively explained on the basis of electrostatic confinement arising due to the loss of electrons to a biased metal disk electrode.
文摘In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant is hydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless numbers for heat and mass transfer reveals that thermal conduction and diffusion are the dominant mechanisms for gas-phase heat and mass transfer, respectively. A simplified model has been established to simulate gas-phase temperature and H concentration distributions between the filament and the substrate. Examination of the relative importance of homogeneous and heterogeneous production of H atoms indicates that filament-surface decomposition of molecular hydrogen is the dominant source of H and gas-phase reaction plays a negligible role. The filament-surface dissociation rates of H2 for various filament temperatures were calculated to match H-atom concentrations observed in the literature or derived from power consumption by filaments. Arrhenius plots of the filament-surface hydrogen dissociation rates suggest that dissociation of H2 at refractory filament surface is a catalytic process, which has a rather lower effective activation energy than homogeneous thermal dissociation. Atomic hydrogen, acting as an important heat transfer medium to heat the substrate, can freely diffuse from the filament to the substrate without recombination.
