Optically Activated Charge Domain Model for High-Gain GaAs Photoconductive Switches

A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) is proposed.The switching transition of high gain PCSS's can be described with an optically activated charge domain. The switching characteristics including rise time,delay and their relationship to electric field strength,optical trigger energies are discussed.The formation and radiation transit,accumulation of the charge domain are related with the triggering and sustaining phases of PCSS's,respectively.The results of the mathematical model on this mechanism agree with experimental results.

Noticeable positive Doppler effect on optical bistability in an N-type active Raman gain atomic system

We theoretically investigate the Doppler effect on optical bistability in an N-type active Raman gain atomic system inside an optical ring cavity. It is shown that the Doppler effect can greatly enhance the dispersion and thus create the bistable behaviour or greatly increase the bistable region, which has been known as the positive Doppler effect on optical bistability. In addition, we find that a positive Doppler effect can change optical bistability from the hybrid dispersion-gain type to a dispersive type.

Influence of Refractive Index Distribution on Brillouin Gain Spectrum in GeO_(2)-Doped Optical Fibers

GeO_(2) is commonly used as dopant to adjust the refractive index profile(RIP)and the acoustic velocity profile(AVP)in the fiber,thereby forming different Brillouin gain spectrum(BGS)characteristics such as Brillouin gain,acoustic mode number and peak intensity difference.When an optical fiber is used in optical fiber sensing or communication system,its BGS characteristics may play an important role in determining the performance of the system.In this paper,finite element analysis(FEA)method is used to study the influence of refractive index distribution and its corresponding AVP on the BGS in step-index,graded-index,and complex-index optical fibers.A new method has also been proposed to efficiently discriminate acoustic mode solution and obtain the new and full images of total Brillouin gain and acoustic modes number of the fiber as a function of the refractive index distribution,considering the influence of changing the refractive index difference and the geometric size simultaneously.For each type of optical fiber,the recommended parameter range is provided for optical fiber sensing and optical fiber communication.Moreover,the suitable optical fiber with close peak intensity in its multi-peak BGS is explored and achieved,which can be used in Brillouin beat spectrum detection systems to improve sensing accuracy.

Semiconductor Optical Amplifier and Gain Chip Used in Wavelength Tunable Lasers

The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.

Temperature dependent direct-bandgap light emission and optical gain of Ge

Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.

Analysis of gain distribution in cladding-pumped thulium-doped fiber laser and optical feedback inhibition problem in fiber-bulk laser system

The steady-state gain distribution in cladding pumped thulium-doped fiber laser（TDFL） is analytically and numerically solved based on the rate equations including loss coefficients and cross relaxation effect. With the gain curve, a problem, which is named optical feedback inhibition（OFI） and always occurs in tandem TDFL-Ho：YAG laser system, is analyzed quantitatively. The actual characteristics of output spectra and power basically prove the conclusion of theoretical analysis. Then a simple mirror-deflected L-shaped cavity is employed to restrain the external feedback and simplify the structure of fiber-bulk Ho：YAG laser. Finally, 25 W of 2097-nm laser power and 51.2% of optical-to-optical conversion efficiency are obtained, and the beam quality factor is less than 1.43 obtained by knife-edge method.

Annealing behaviour of structure and morphology and its effects on the optical gain of Er^3＋/yb^3＋ co-doped Al2O3 planar waveguide amplifier

Using transmission electron microscopy （TEM） and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped A1203 films in the temperature range from 600℃-900℃. By comparison with TEM observation, the annealing behaviours of photoluminescence （PL） emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800℃ might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.

Gain-induced large optical torque in optical twist settings

Inducing a significant optical torque remains a challenging task,since the law of angular momentum conservation implies that one has to harvest a lot of light.Such a problem was partially resolved by using optical twist via strong internal multiple scattering to recycle the photons,and one can induce a large torque per unit of radiation cross section.By using the Maxwell stress tensor and the generalized Lorentz-Mie scattering theory for multi-spheres,we investigate the influence of gain materials in further amplifying optical torque in the optical twist settings.It is found that,when combined with a gain layer,the optical torque of lossy(both in PT-and non-PT-symmetric structures)or lossless(low dielectric materials)clusters at resonance could be one order of magnitude larger than those of a single layer and previous studied plasmonic double layer structures.Moreover,the gain-enhanced large opposite rotations(i.e.,optical twist)of the two layers arise at resonances in these structures.In contrast,in the gain-gain double-layer cluster,optical torques on both layers have no significant increase and the two layers rotate in the same direction at resonances.This work provides an elaborate investigation on the gain media-induced optical twist,which offers more choices for optical micromanipulation.

Propagation of Optical Pulses in a Deviated Gaussian Gained Kerr Medium

This paper presents the theoretical studies on the propagation of optical pulses in a deviated Gaussian gained Kerr medium.Our numerical results have shown,for the first time,that the compression of optical pulse widths varies considerably for differently deviated Gaussian gain.

Gain Characteristics of Fiber Optical Parametric Amplifier

The theory model of fiber optical parametric amplifier (FOPA) was introduced, which is based on optical nonlinear effect. And then numerical simulation was done to analyze and discuss the gain spectral characteristics of one-pump and two-pump FOPA. The results show that for one-pump FOPA, when pump wavelength is near to fiber zero-dispersion wavelength(ZDW), the gain flatness is better, and with the increase of the pump power, fiber length and its nonlinear coefficient, the gain value will increase while the gain bandwidth will become narrow. For two-pump FOPA, when the pump central wavelength is near to fiber ZDW, the gain flatness is better. Moreover, by decreasing the space of two pumps wavelength, the gain flatness can be improved. Finally, some problems existing in FOPA were addressed.

Optical Gain Coefficient Measurements for 1-(4’-(Diphenylamino)-[1,1’-biphenyl]-4-yl)ethanone

In this study, the optical gain coefficient due to spontaneous emission for the conjugated compound 1-(4’-(diphenylamino)-[1,1’-biphenyl]-4-yl)ethanone (DBE) in two solvents, Tetrahydrofuran (THF) and Dichloromethane (DCM) was investigated using the variable stripe length method. The solutions were placed in 10 mm cuvettes and pumped optically with N2 laser (337 nm) with pulse duration of 1.2 ns and repetition rate of 10 Hz. A maximum net gain of 12 cm−1 for the compound in THF, and 7 cm−1 for the compound in DCM were recorded at the input energy of 162 μJ. The fluorescence quantum yields (∅f) of the compound were determined at the excitation wavelength of 337 nm using coumarin as a standard. The values of (∅f) for the samples in DCM and THF solvents were found to be 0.68 and 0.61, respectively. The high values of quantum yields suggest the possibility of using this material as an active media for lasing and for LED.

Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model

Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k·p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3 um lasers at room temperature because they can easily be used to obtain 1.3 um for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.

Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.

ZTE Gains Second Largest Share of the Global Optical Networking Market in 2011

ZTE gained the second largest share of the global optical networking market of any company for the second year in a row. ZTE gained 1.8 share points on 2010. In two years, the company moved from world No. 5 to world No. 2 in the global optical network market, and its annual revenues now surpass $1.7 billion.

ZTE Gains Second Largest Share of the Global Optical Networking Market in 2011

22 August 2012 -- ZTE Corporation, a publicly listed global provider of telecommunications equipment and network solutions, announced its interim results for the six months ended 30 June 2012. Based on both HKFRS and PRC ASBE, ZTE recorded revenue of RMB 42.64 billion for the period, an increase of 15.2% year-on-year. Pre-tax profit in the period was RMB 656 million, a decrease of 48.5% year-on-year. Basic earnings per share for the period were RMB 0.07. During the reporting period,

一种全透明宽带高增益离子液体透镜天线

基于5G美化移动基站和军用领域中光学/微波多模复合制导隐身等对天线光学透明和易伪装隐蔽的现实需求,本文设计了一种全透明宽带高增益离子液体天线。天线由离子液体,椭球透镜容器,锥形辐射引向器,以及带有透明导电膜的反射地板组成。首先,利用介质透镜上对频率的无选择性使得天线获得宽带特性。其次,通过使用低损耗离子液体和椭球透镜结构,使得液体介质透镜产生一个同相射线场,从而可以产生极强的方向性。最后,在液体介质周围加载一个锥形辐射引向器,使得辐射波束进一步集中,从而提高增益。此外,通过在天线的背面加载透明导电膜反射地板,进一步降低了后瓣,并且使整个天线呈现了光学全透明的效果。仿真和实验表明,天线工作在9.9 GHz~18 GHz(S11≤-10 dB)频带范围,最大实测增益可达12.1 dBi。天线在雷达探测、5G基站、电子对抗以及透明电子产品等领域中具有广泛的应用前景。

用于多模态非线性光学显微成像的增益管理放大全光纤飞秒激光技术

基于增益管理非线性放大的机制,求解非线性薛定谔方程和速率方程对脉冲在增益光纤中的传播过程进行仿真,研究了脉冲在增益光纤中的演化过程。结果表明,优化预啁啾量和种子光强度,可改变脉冲在增益光纤中的增益曲线。在动态增益曲线与非线性效应的共同作用下,输出光脉冲的频谱会迅速展宽数倍并带有线性啁啾,进而脉冲可被压缩至近傅里叶变换极限。为验证该超短脉冲产生方式的可行性,采用仿真结果中的最佳参数设置,成功设计并搭建了一台高能量、短脉宽、高质量的超快光纤光源。该光源可实现中心波长为1060 nm、重复频率为35 MHz、平均功率为267.4 mW以及脉冲宽度仅为39.5 fs的激光输出,与仿真结果高度一致。同现有的超短脉冲产生方式相比,本实验装置的结构更简单、造价更低、装置更紧凑、产生光束品质更佳。

高性能PtS_(2)/MoTe_(2)异质结红外光电探测器

由于光电探测器的工作性能直接关系到系统数据采集质量,为此,对高性能PtS_(2)/MoTe_(2)异质结红外光电探测器进行了研究。通过选取材料、试剂和设备制作了PtS_(2)/MoTe_(2)异质结红外光电探测器。搭建探测器性能测试环境,并利用光响应度、探测率、响应时间和光电导增益4个指标,分析探测器性能。结果表明,随着测试时间的推移,PtS_(2)/MoTe_(2)异质结红外光电探测器的光响应度数值始终处于5 A/W限值以上;无论对采集何种材质反射的红外光,探测器探测率均大于10 cm·Hz1/2 W^(-1);无论光生电流是处于上升还是下降时间,其响应时间始终在限值150μs以下;光电导增益值保持在80%以上。

基于光注入电流调制弱谐振腔法布里珀罗激光器获取光学频率梳

提出了一种基于电流调制弱谐振腔法布里珀罗激光器在外部光注入下产生光学频率梳的方案,实验研究了关键参量对所产生的光学频率梳性能的影响。在该方案中,首先采用频率为1.6 GHz(激光器弛豫振荡频率)、功率为19 dBm的正弦信号直接电流调制弱谐振腔法布里珀罗激光器,使其进入增益开关状态;进一步引入单光注入以及双光注入以获取高性能光学频率梳。实验研究结果表明:采用单光注入时,在合适的注入光功率条件下,连续变化注入光波长可使产生的光学频率梳的中心波长在1525~1560 nm内实现连续调谐。光学频率梳的梳线数目呈现周期性变化,变化周期为激光器的纵模间距0.28 nm(35 GHz);在给定注入光波长条件下,逐渐增加注入光功率,光学频率梳的梳线数目先在一个较高水平附近振荡,然后急剧下降,最后趋于平缓,而光学频率梳的载噪比呈现先增加后饱和的趋势;在优化单光注入参数条件下,获得了梳线功率在10 dB变化范围内包含49根梳线的光学频率梳。引入额外的注入光构建双光注入,在优化的参数条件下,获得了梳线功率在10 dB变化范围内包含92根梳线的光学频率梳。最后,对单光注入和双光注入以及不同注入波长间距的双光注入所产生的光学频率梳各梳齿之间的相干性进行了分析,发现各种光注入方式下所产生的光学频率梳各梳齿之间均具有强的相干性,其拍频信号中基频的单边带相位噪声均处于−125.0 dBc/Hz@10 kHz左右的水平。

我国关键有源光纤材料发展战略研究

光纤激光器及放大器广泛应用于智能制造、生命健康、新一代信息技术以及国防军事等领域,而有源光纤是光纤激光器和放大器的关键材料。本文综述了红外波段(近红外1.0μm、近中红外1.3~1.5μm、中红外2.0~3.0μm)关键有源光纤材料的研究进展,从增益系数、增益带宽、特种光纤应用等角度分析了国内外有源光纤材料的发展现状和趋势,指出了我国在该领域所面临的生产设备国产化率不高、高端工业化产品不足等问题,提出了我国关键有源光纤材料未来的重点发展思路、发展方向和发展目标。最后从基本理论自主创新、产业可持续发展、推动政策体系构建、高技术产品引领、全产业链循环发展、领域人才梯队培养等方面提出了对策建议,以期推动我国关键有源光纤材料领域优质、快速发展。