Fast source mask co-optimization method for high-NA EUV lithography

Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.

The study of lithographic variation in resistive random access memory

Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.

Two-photon polymerization lithography for imaging optics

Optical imaging systems have greatly extended human visual capabilities,enabling the observation and understanding of diverse phenomena.Imaging technologies span a broad spectrum of wavelengths from x-ray to radio frequencies and impact research activities and our daily lives.Traditional glass lenses are fabricated through a series of complex processes,while polymers offer versatility and ease of production.However,modern applications often require complex lens assemblies,driving the need for miniaturization and advanced designs with micro-and nanoscale features to surpass the capabilities of traditional fabrication methods.Three-dimensional(3D)printing,or additive manufacturing,presents a solution to these challenges with benefits of rapid prototyping,customized geometries,and efficient production,particularly suited for miniaturized optical imaging devices.Various 3D printing methods have demonstrated advantages over traditional counterparts,yet challenges remain in achieving nanoscale resolutions.Two-photon polymerization lithography(TPL),a nanoscale 3D printing technique,enables the fabrication of intricate structures beyond the optical diffraction limit via the nonlinear process of two-photon absorption within liquid resin.It offers unprecedented abilities,e.g.alignment-free fabrication,micro-and nanoscale capabilities,and rapid prototyping of almost arbitrary complex 3D nanostructures.In this review,we emphasize the importance of the criteria for optical performance evaluation of imaging devices,discuss material properties relevant to TPL,fabrication techniques,and highlight the application of TPL in optical imaging.As the first panoramic review on this topic,it will equip researchers with foundational knowledge and recent advancements of TPL for imaging optics,promoting a deeper understanding of the field.By leveraging on its high-resolution capability,extensive material range,and true 3D processing,alongside advances in materials,fabrication,and design,we envisage disruptive solutions to current challenges and a promising incorporation of TPL in future optical imaging applications.

Real-time generation of circular patterns in electron beam lithography

Electron beam lithography(EBL)involves the transfer of a pattern onto the surface of a substrate byfirst scanning a thin layer of organicfilm(called resist)on the surface by a tightly focused and precisely controlled electron beam(exposure)and then selectively removing the exposed or nonexposed regions of the resist in a solvent(developing).It is widely used for fabrication of integrated cir-cuits,mask manufacturing,photoelectric device processing,and otherfields.The key to drawing circular patterns by EBL is the graphics production and control.In an EBL system,an embedded processor calculates and generates the trajectory coordinates for movement of the electron beam,and outputs the corresponding voltage signal through a digital-to-analog converter(DAC)to control a deflector that changes the position of the electron beam.Through this procedure,it is possible to guarantee the accuracy and real-time con-trol of electron beam scanning deflection.Existing EBL systems mostly use the method of polygonal approximation to expose circles.A circle is divided into several polygons,and the smaller the segmentation,the higher is the precision of the splicing circle.However,owing to the need to generate and scan each polygon separately,an increase in the number of segments will lead to a decrease in the overall lithography speed.In this paper,based on Bresenham’s circle algorithm and exploiting the capabilities of afield-programmable gate array and DAC,an improved real-time circle-producing algorithm is designed for EBL.The algorithm can directly generate cir-cular graphics coordinates such as those for a single circle,solid circle,solid ring,or concentric ring,and is able to effectively realizes deflection and scanning of the electron beam for circular graphics lithography.Compared with the polygonal approximation method,the improved algorithm exhibits improved precision and speed.At the same time,the point generation strategy is optimized to solve the blank pixel and pseudo-pixel problems that arise with Bresenham’s circle algorithm.A complete electron beam deflection system is established to carry out lithography experiments,the results of which show that the error between the exposure results and the preset pat-terns is at the nanometer level,indicating that the improved algorithm meets the requirements for real-time control and high precision of EBL.

A Kernel-Based Convolution Method to Calculate Sparse Aerial Image Intensity for Lithography Simulation

Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results.

A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography

A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.

Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.

Nano-Level Electron Beam Lithography

The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

The theoretic analysis of maskless surface plasmon resonant interference lithography by prism coupling

The use of an attenuated total reflection-coupling mode of prism coated with metal film to excite the interference of the surface plasmon polaritons （SPPs） was proposed for periodic patterning with a resolution of subwavelength scale. High intensity of electric field can be obtained because of the coupling between SPPs and evanescence under a resonance condition, which can reduce exposure time and improve contrast. In this paper, several critical parameters for maskless surface plasmon resonant lithography are described, and the preliminary simulation based on a finite difference timedomain technique agrees well with the theoretical analysis, which demonstrates this scheme and provides the theoretical basis for further experiments.

Nanoimprint Lithography:A Processing Technique for Nanofabrication Advancement

Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological nodes.In this paper,we present an overview of nanoimprint lithography.The classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been demonstrated.Full-wafer nanoimprint lithography has been completed on a 12-inch wafer.Recently,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.

Electro-Optically Switchable Optical True Delay Lines of Meter-Scale Lengths Fabricated on Lithium Niobate on Insulator Using Photolithography Assisted Chemo-Mechanical Etching

Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm.

Current Status of Extreme Ultraviolet Lithography in Japan

ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.

Structured mirror array for two-dimensional collimation of a chromium beam in atom lithography

Direct-write atom lithography,one of the potential nanofabrication techniques,is restricted by some difficulties in producing optical masks for the deposition of complex structures.In order to make further progress,a structured mirror array is developed to transversely collimate the chromium atomic beam in two dimensions.The best collimation is obtained when the laser red detunes by natural line-width of transition 7S3 → 7P40 of the chromium atom.The collimation ratio is 0.45 vertically（in x axis）,and it is 0.55 horizontally（in y axis）.The theoretical model is also simulated,and success of our structured mirror array is achieved.

An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices

We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.

Fabrication of a 256-bits organic memory by soft x-ray lithography

This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.

Current Status of EUV Lithography

According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm×28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm×1mm. And using scanning stages, 100 nm L&S patterns have been replicated in the field of 10mm×5 mm.

Synchrotron Radiation Lithography and MEMS Technique at NSRL

Two beamlines and stations for soft X-ray lithography and hard X-ray lithography at NSRL are presented. Synchrotron radiation lithography (SRL) and mask techniques are developed, and the micro-electro-mechanical systems (MEMS) techniques are also investigated at NSRL. In this paper, some results based on SRL and MEMS techniques are reported, and sub-micron and high aspect ratio microstructures are given. Some micro-devices, such as microreactors are fabricated at NSRL.

Development of Debris-free Laser Plasma Sources for EUV Lithography in CIOMP

We have been developing debris-free laser plasma sources for EUV lithography since 1996. Two types of debris-free sources, such as cryogenic target and gas-puff target laser plasma sources, were designed and built up in CIOMP. EUV radiation spectra of the sources with a variety of targets have been obtained by different ways.

Confinement-induced nanocrystal alignment of conjugated polymer by the soft-stamped nanoimprint lithography

Soft-stamped nanoimprint lithography（NIL） is considered as one of the most effective processes of nanoscale patterning because of its low cost and high throughput. In this work, this method is used to emboss the poly（9, 9-dioctylfluorene）film. By reducing the linewidth of the nanogratings on the stamp, the orientations of nanocrystals are confined along the grating vector in the nanoimprint process, where the confinement linewidth is comparable to the geometrical size of the nanocrystal. When the linewidth is about 400 nm, the poly（9, 9-dioctylfluorene）（PFO） nanocrystals could be orderly arranged in the nanogratings, so that both pattern transfer and well-aligned nanocrystal arrangement could be achieved in a single step by the soft-stamped NIL. The relevant mechanism of the nanocrystalline alignment in these nanogratings is fully discussed. The modulation of nanocrystal alignment is of benefit to the charge mobilities and other performances of PFO-based devices for the future applications.