The meminductive system can be regarded as the generalization of the meminductor. This paper focuses on exploring the generic meminductive characteristics of the switched reluctance machine （SRM）. The dynamical equa...The meminductive system can be regarded as the generalization of the meminductor. This paper focuses on exploring the generic meminductive characteristics of the switched reluctance machine （SRM）. The dynamical equations of SRM sys- tems are derived and discussed in comparison with the typical constitutive relation equations of the meminductive system. Memory ability and pinched hysteresis loop （PHL） are taken as the indicative fingerprints to draw forth the theoretically comparative analysis. Based on the theoretical analysis, in addition to simulation and experimental confirmation, it can be concluded that from the viewpoint of circuit, SRM can be considered as a generic meminductive system.展开更多
Voltage-controlled conductance and switching induced by single molecules or atoms are ideally studied in scanning tunneling microscope （STM） tunnel junctions. While the objects under consideration are mostly used in...Voltage-controlled conductance and switching induced by single molecules or atoms are ideally studied in scanning tunneling microscope （STM） tunnel junctions. While the objects under consideration are mostly used in their original form, little is known of the possibilities of in situ adjustments of their properties. Here, we evidence properties of a tunnel junction made of a Ce atom/cluster built by atomic manipulation on Au（111） at a temperature of 4.6 K in the presence of H2. The conductance through the object is characterized by a switching voltage corresponding to an opening or closing of an inelastic electron tunneling conductance channel at 50 mV for a Ce atom and 140 mV for a Ce cluster and by charging. We demonstrate that the electronic properties of an STM junction can be engineered in a simple way by in situ guiding of the H2 pinning at an atomic cluster.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51277174)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120095110019)+1 种基金a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Research and Innovation Program of Postgraduates of Jiangsu Province,China(Grant No.KYLX 1382)
文摘The meminductive system can be regarded as the generalization of the meminductor. This paper focuses on exploring the generic meminductive characteristics of the switched reluctance machine （SRM）. The dynamical equations of SRM sys- tems are derived and discussed in comparison with the typical constitutive relation equations of the meminductive system. Memory ability and pinched hysteresis loop （PHL） are taken as the indicative fingerprints to draw forth the theoretically comparative analysis. Based on the theoretical analysis, in addition to simulation and experimental confirmation, it can be concluded that from the viewpoint of circuit, SRM can be considered as a generic meminductive system.
文摘Voltage-controlled conductance and switching induced by single molecules or atoms are ideally studied in scanning tunneling microscope （STM） tunnel junctions. While the objects under consideration are mostly used in their original form, little is known of the possibilities of in situ adjustments of their properties. Here, we evidence properties of a tunnel junction made of a Ce atom/cluster built by atomic manipulation on Au（111） at a temperature of 4.6 K in the presence of H2. The conductance through the object is characterized by a switching voltage corresponding to an opening or closing of an inelastic electron tunneling conductance channel at 50 mV for a Ce atom and 140 mV for a Ce cluster and by charging. We demonstrate that the electronic properties of an STM junction can be engineered in a simple way by in situ guiding of the H2 pinning at an atomic cluster.
