Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an eval...Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an evaluation method of theinfluence of V_(TH) hysteresis on the switching characteristics ofSiC MOSFETs. This method can eliminate the impact of triggerlevel and obtain the dynamic V_(TH). Furthermore, the influence ofparasitic parameters on dynamic V_(TH) hysteresis is theoreticallyanalyzed. Double pulse tests under different parasitic parametersare performed on three SiC MOSFETs with different gatestructures to verify the analysis. Results show that gate resistance(R_(G)) and source inductance (L_(S)) have more significant effectson dynamic V_(TH) hysteresis compared with gate inductance anddrain inductance. V_(TH) hysteresis phenomenon weakens withincrease of R_(G) or L_(S), which is related to device structure.The results presented in this paper can provide guidance forthe design of circuit parasitic parameters of SiC MOSFETs toregulate V_(TH) hysteresis.展开更多
In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modula...In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.展开更多
基金the Science andTechnology Project of State Grid Corporation of China (No. 52094021N012).
文摘Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an evaluation method of theinfluence of V_(TH) hysteresis on the switching characteristics ofSiC MOSFETs. This method can eliminate the impact of triggerlevel and obtain the dynamic V_(TH). Furthermore, the influence ofparasitic parameters on dynamic V_(TH) hysteresis is theoreticallyanalyzed. Double pulse tests under different parasitic parametersare performed on three SiC MOSFETs with different gatestructures to verify the analysis. Results show that gate resistance(R_(G)) and source inductance (L_(S)) have more significant effectson dynamic V_(TH) hysteresis compared with gate inductance anddrain inductance. V_(TH) hysteresis phenomenon weakens withincrease of R_(G) or L_(S), which is related to device structure.The results presented in this paper can provide guidance forthe design of circuit parasitic parameters of SiC MOSFETs toregulate V_(TH) hysteresis.
基金supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)+5 种基金in part by CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by IMECAS-HKUST-Joint Laboratory of Microelectronics。
文摘In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.
