The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. T...The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.展开更多
A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, s...A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.展开更多
Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiat...Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage （C-V） technique after irradi- ation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C V data, secondary ion mass spectrometry （SIMS）, and Fourier transform infrared （FTIR） spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.展开更多
Antibacterial activity of AISI420 stainless steel (SS) implanted by copper was investigated. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 100keV energy and a dose range from 0.2×1017 to 2...Antibacterial activity of AISI420 stainless steel (SS) implanted by copper was investigated. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 100keV energy and a dose range from 0.2×1017 to 2.0×1017ions·cm-2. The saturation dose of Cu implantation in AISI420 SS and Cu surface concentration were calculated at the energy of 100keV. The effect of dose on the antibacterial activity was analyzed. Results of antibacterial test show that the saturation dose is the optimum implantation dose for best antibacterial activity, which is above 99% against both Escherichia coli and Staphylococcus aureus. Novel phases such as Fe4Cu3 and Cu9.9Fe0.1 were found in the implanted layer by glancing angle X-ray diffraction (GXRD). The antibacterial activity of AISI420 SS attributes to Cu-contained phase.展开更多
Silicon-on-insulator（SOI） devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the norm...Silicon-on-insulator（SOI） devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal–oxide–semiconductor transistor（CMOS） process is used to harden the SOI wafer.The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods.The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly.The metastable electron traps introduced by Si implantation is also investigated by electrical stress.The results show that these traps are very instable,and electrons will tunnel into or out of the metastable electron traps quickly after hot-electroninjection or hot-hole-injection.展开更多
Antibacterial activity has been studied by copper ion implantation into 0Cr18Ni9 stainless steel. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 60-100keV energy and a dose range (0.2-2.0)×...Antibacterial activity has been studied by copper ion implantation into 0Cr18Ni9 stainless steel. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 60-100keV energy and a dose range (0.2-2.0)×1017 ions cm-2. Saturation doses, surface concentration were calculated and the relationships between energy, dose and antibacterial activity were analyzed. Novel phases such as Fe4Cu3 and Cu0.81Ni0.19 were found after copper implantation by X-ray diffraction. The novel phases, effects on antibacterial activity have been investigated. The results show that saturation dose varies with the ions' energy. Antibacterial activity has close relation with copper,s concentration in implanted layer and Cu-rich phase.展开更多
we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsi...we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.展开更多
Human umbilical cord mesenchymal stem cells(hUC-MSCs)are a promising candidate for spinal cord injury(SCI)repair owing to their advantages of low immunogenicity and easy accessibility over other MSC sources.However,mo...Human umbilical cord mesenchymal stem cells(hUC-MSCs)are a promising candidate for spinal cord injury(SCI)repair owing to their advantages of low immunogenicity and easy accessibility over other MSC sources.However,modest clinical efficacy hampered the progression of these cells to clinical translation.This discrepancy may be due to many variables,such as cell source,timing of implantation,route of administration,and relevant efficacious cell dose,which are critical factors that affect the efficacy of treatment of patients with SCI.Previously,we have evaluated the safety and efficacy of 4×10^(6) hUC-MSCs/kg in the treatment of subacute SCI by intrathecal implantation in rat models.To search for a more accurate dose range for clinical translation,we compared the effects of three different doses of hUC-MSCs-low(0.25×10^(6) cells/kg),medium(1×10^(6) cells/kg)and high(4×10^(6) cells/kg)-on subacute SCI repair through an elaborate combination of behavioral analyses,anatomical analyses,magnetic resonance imaging-diffusion tensor imaging(MRI-DTI),biotinylated dextran amine(BDA)tracing,electrophysiology,and quantification of mRNA levels of ion channels and neurotransmitter receptors.Our study demonstrated that the medium dose,but not the low dose,is as efficient as the high dose in producing the desired therapeutic outcomes.Furthermore,partial restoration of theγ-aminobutyric acid type A(GABAA)receptor expression by the effective doses indicates that GABAA receptors are possible candidates for therapeutic targeting of dormant relay pathways in injured spinal cord.Overall,this study revealed that intrathecal implantation of 1×10^(6) hUC-MSCs/kg is an alternative approach for treating subacute SCI.展开更多
The critical surface energy of steels surface modified by ion implantation was evaluated. Zisman’s method was used to investigate the critical surface energy of 40Cr, # 45, GCr15, 1Crl8Ni9Ti steels implanted under th...The critical surface energy of steels surface modified by ion implantation was evaluated. Zisman’s method was used to investigate the critical surface energy of 40Cr, # 45, GCr15, 1Crl8Ni9Ti steels implanted under the different conditions from the contact angle data. The critical surface energy in steel shows a general tendency to decrease with the increase of implanting energy and dose. On the grounds of the relationship between the energy of adhesion of sliding interfaces and the solid surface energy, reduction of friction and increase of wear resistance of the implanted surfaces have been demonstrated experimentally.展开更多
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiat...In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.展开更多
36 MeV/u^(16)O^(8+)ion beams with different doses were used to implant into endosperms of seeds of cultivars 86336 and 14615,spring wheat(Triticum aestivum L.).The ions with 1×10~7,5×10~7,and 1×10~8 ion...36 MeV/u^(16)O^(8+)ion beams with different doses were used to implant into endosperms of seeds of cultivars 86336 and 14615,spring wheat(Triticum aestivum L.).The ions with 1×10~7,5×10~7,and 1×10~8 ion/cm2~ were for experiment of soluble protein assay of 86336 while that wittl 1×10~8 ion/cm^2 were for farm test of 86336展开更多
The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps intro...The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.展开更多
基金Project supported by the National Fund for Distinguished Young Scholars （Grant No 59925205）, the Basic Research Program of Shanghai （Grant No 02DJ14069）, and the National Natural Science Foundation of China （Grant No 10305018）.
文摘The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.
文摘A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.
文摘Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage （C-V） technique after irradi- ation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C V data, secondary ion mass spectrometry （SIMS）, and Fourier transform infrared （FTIR） spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.
基金This work was supported by the National Natural Science Foundation of China(No.50101009)
文摘Antibacterial activity of AISI420 stainless steel (SS) implanted by copper was investigated. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 100keV energy and a dose range from 0.2×1017 to 2.0×1017ions·cm-2. The saturation dose of Cu implantation in AISI420 SS and Cu surface concentration were calculated at the energy of 100keV. The effect of dose on the antibacterial activity was analyzed. Results of antibacterial test show that the saturation dose is the optimum implantation dose for best antibacterial activity, which is above 99% against both Escherichia coli and Staphylococcus aureus. Novel phases such as Fe4Cu3 and Cu9.9Fe0.1 were found in the implanted layer by glancing angle X-ray diffraction (GXRD). The antibacterial activity of AISI420 SS attributes to Cu-contained phase.
文摘Silicon-on-insulator（SOI） devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal–oxide–semiconductor transistor（CMOS） process is used to harden the SOI wafer.The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods.The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly.The metastable electron traps introduced by Si implantation is also investigated by electrical stress.The results show that these traps are very instable,and electrons will tunnel into or out of the metastable electron traps quickly after hot-electroninjection or hot-hole-injection.
基金The National Natural Science Foundation of China(Grant No.50101009).
文摘Antibacterial activity has been studied by copper ion implantation into 0Cr18Ni9 stainless steel. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 60-100keV energy and a dose range (0.2-2.0)×1017 ions cm-2. Saturation doses, surface concentration were calculated and the relationships between energy, dose and antibacterial activity were analyzed. Novel phases such as Fe4Cu3 and Cu0.81Ni0.19 were found after copper implantation by X-ray diffraction. The novel phases, effects on antibacterial activity have been investigated. The results show that saturation dose varies with the ions' energy. Antibacterial activity has close relation with copper,s concentration in implanted layer and Cu-rich phase.
基金supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201205)the National Natural Science Foundation of China(Grant No.61106103)
文摘we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.
基金supported by the National Key Research and Development Program of China,No.2017YFA0105401(to LMR)the National Natural Science Foundation of China,Nos.31671420 and 81602482(to MML)a grant from the Guangdong Provincial Key Laboratory of Bone and Joint Degeneration Diseases.
文摘Human umbilical cord mesenchymal stem cells(hUC-MSCs)are a promising candidate for spinal cord injury(SCI)repair owing to their advantages of low immunogenicity and easy accessibility over other MSC sources.However,modest clinical efficacy hampered the progression of these cells to clinical translation.This discrepancy may be due to many variables,such as cell source,timing of implantation,route of administration,and relevant efficacious cell dose,which are critical factors that affect the efficacy of treatment of patients with SCI.Previously,we have evaluated the safety and efficacy of 4×10^(6) hUC-MSCs/kg in the treatment of subacute SCI by intrathecal implantation in rat models.To search for a more accurate dose range for clinical translation,we compared the effects of three different doses of hUC-MSCs-low(0.25×10^(6) cells/kg),medium(1×10^(6) cells/kg)and high(4×10^(6) cells/kg)-on subacute SCI repair through an elaborate combination of behavioral analyses,anatomical analyses,magnetic resonance imaging-diffusion tensor imaging(MRI-DTI),biotinylated dextran amine(BDA)tracing,electrophysiology,and quantification of mRNA levels of ion channels and neurotransmitter receptors.Our study demonstrated that the medium dose,but not the low dose,is as efficient as the high dose in producing the desired therapeutic outcomes.Furthermore,partial restoration of theγ-aminobutyric acid type A(GABAA)receptor expression by the effective doses indicates that GABAA receptors are possible candidates for therapeutic targeting of dormant relay pathways in injured spinal cord.Overall,this study revealed that intrathecal implantation of 1×10^(6) hUC-MSCs/kg is an alternative approach for treating subacute SCI.
文摘The critical surface energy of steels surface modified by ion implantation was evaluated. Zisman’s method was used to investigate the critical surface energy of 40Cr, # 45, GCr15, 1Crl8Ni9Ti steels implanted under the different conditions from the contact angle data. The critical surface energy in steel shows a general tendency to decrease with the increase of implanting energy and dose. On the grounds of the relationship between the energy of adhesion of sliding interfaces and the solid surface energy, reduction of friction and increase of wear resistance of the implanted surfaces have been demonstrated experimentally.
文摘In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.
文摘36 MeV/u^(16)O^(8+)ion beams with different doses were used to implant into endosperms of seeds of cultivars 86336 and 14615,spring wheat(Triticum aestivum L.).The ions with 1×10~7,5×10~7,and 1×10~8 ion/cm2~ were for experiment of soluble protein assay of 86336 while that wittl 1×10~8 ion/cm^2 were for farm test of 86336
基金Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04)the Fund of SOI Research and Development Center(No.20106250XXX)
文摘The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.
