Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit

We demonstrate a piezoelectric vibration energy harvester with the ZnO piezoelectric film and an improved synchronous electric charge extraction energy harvesting circuit on the basis of the beam-type mechanical structure,especially investigate its output performance in vibration harvesting and ability to generate charges.By establishing the theoretical model for each of vibration and circuit,the numerical results of voltage and power output are obtained.By fabricating the prototype of this harvester,the quality of the sputtered film is explored.Theoretical and experimental analyses are conducted in open-circuit and closed-circuit conditions,where the open-circuit mode refers to the voltage output in relation to the ZnO film and external excitation,and the power output of the closed-circuit mode is relevant to resistance.Experimental findings show good agreement with the theoretical ones,in the output tendency.It is observed that the properties of ZnO film achieve regularly direct proportion to output performance under different excitations.Furthermore,a maximum experimental power output of 4.5 mW in a resistance range of 3 kΩ-8 kΩis achieved by using an improved synchronous electric charge extraction circuit.The result is not only more than three times the power output of classic circuit,but also can broaden the resistance to a large range of 5 kΩunder an identical maximum value of power output.In this study we demonstrate the fundamental mechanism of piezoelectric materials under multiple conditions and take an example to show the methods of fabricating and testing the ZnO film.Furthermore,it may contribute to a novel energy harvesting circuit with high output performance.

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

高性能全加器电路版图优化设计研究

在现有全加器研究基础上,提出一种高性能全加器改进电路(improved full adder circuit,IFAC),通过改进全加器电路结构,优化电路元件工作数量,旨在提升加法器逻辑功能与运行状态。采用Candence软件搭载130 nm芯片锻造工艺,引入欧拉路径快速判寻法设计其电路版图,验证版图规则的合理性,并利用版图验证工具Dracula对电路进行仿真测试,结果表明本文所设计的全加器较常规全加器在处理复杂网络精确度、传输延迟时间、低功耗稳定运行及芯片面积方面有所提升。

An improved single-π equivalent circuit model for on-chip inductors in GaAs process

An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.