By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1...By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-2.eV^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.展开更多
将高频率分辨力谱估计技术与优化算法相结合而提出一种新的异步电动机转子故障检测方法。针对两种典型的高频率分辨力谱估计技术——多重信号分类(multiple signalclassification,MUSIC)与旋转不变信号参数估计技术(estimation of signa...将高频率分辨力谱估计技术与优化算法相结合而提出一种新的异步电动机转子故障检测方法。针对两种典型的高频率分辨力谱估计技术——多重信号分类(multiple signalclassification,MUSIC)与旋转不变信号参数估计技术(estimation of signal parameters via rotational invariancetechnique,ESPRIT),应用模拟转子故障的定子电流信号测试其频率分辨力、精度等性能,结果表明:即使对于短时信号,二者仍具高频率分辨力,可以准确地分辨定子电流信号中转子故障特征分量、主频分量之频率;但对其幅值、初相角,仅能提供"粗糙"估计。为此,尝试以优化算法——模拟退火算法(simulated annealing algorithm,SAA)与模式搜索算法(pattern search algorithm,PSA)确定各分量的幅值与初相角。同时,分别对MUSIC与ESPRIT、SAA与PSA做了性能对比,遴选优者并应用于转子故障检测。最后,针对转子断条故障进行实验,结果表明:基于高频率分辨力谱估计技术与优化算法的异步电动机转子故障检测方法有效、可行,即使在负载波动、噪声等干扰严重情况下仍然适用。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,10774001,60736033,and 60890193)the National Basic Research Program of China (Grant Nos.2006CB604908 and 2006CB921607)
文摘By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-2.eV^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.
文摘将高频率分辨力谱估计技术与优化算法相结合而提出一种新的异步电动机转子故障检测方法。针对两种典型的高频率分辨力谱估计技术——多重信号分类(multiple signalclassification,MUSIC)与旋转不变信号参数估计技术(estimation of signal parameters via rotational invariancetechnique,ESPRIT),应用模拟转子故障的定子电流信号测试其频率分辨力、精度等性能,结果表明:即使对于短时信号,二者仍具高频率分辨力,可以准确地分辨定子电流信号中转子故障特征分量、主频分量之频率;但对其幅值、初相角,仅能提供"粗糙"估计。为此,尝试以优化算法——模拟退火算法(simulated annealing algorithm,SAA)与模式搜索算法(pattern search algorithm,PSA)确定各分量的幅值与初相角。同时,分别对MUSIC与ESPRIT、SAA与PSA做了性能对比,遴选优者并应用于转子故障检测。最后,针对转子断条故障进行实验,结果表明:基于高频率分辨力谱估计技术与优化算法的异步电动机转子故障检测方法有效、可行,即使在负载波动、噪声等干扰严重情况下仍然适用。
