It has been reported that application of pulsed biases in arc ion plating could effectively eliminate droplet particles. The present paper aims at experimental verification of a physical model proposed previously by u...It has been reported that application of pulsed biases in arc ion plating could effectively eliminate droplet particles. The present paper aims at experimental verification of a physical model proposed previously by us which is based on particle charging and repulsion in the pulsed plasma sheath. An orthogonal experiment was designed for this purpose, using the electrical parameters of the pulsed bias for the deposition of TiN films on stainless steel substrates. The effect of these parameters on the amount and the size distribution of the particles were analyzed, and the results provided sufficient evidence for the physical model.展开更多
[CoPt 1.5 ml/ZrO2 xnm]10 multilayer films were deposited on glass substrates by magnetron sputtering and then annealed in vacuum at 600℃ for 30 min. Their structures and magnetic properties were investigated as a fun...[CoPt 1.5 ml/ZrO2 xnm]10 multilayer films were deposited on glass substrates by magnetron sputtering and then annealed in vacuum at 600℃ for 30 min. Their structures and magnetic properties were investigated as a function of ZrO2 content. The results show that the grain size and coercivity first increase and then decrease with the increase in ZrO2 content. The maximum coercivity and grain size are obtained at 37 vol.% of ZrO2. The content of ZrO2 in the film plays an important role in the separation of CoPt grains and in the reduction of intergrain exchange interaction. On the basis of the studies of angular dependent coercivity, it is found that the magnetization reversal of CoPt films with （111 ） texture is different from either the domain wall motion or the S-W type of rotation mode.展开更多
In this work,metal–semiconductor–metal solar-blind ultraviolet photoconductors were fabricated based on theβ-Ga_(2)O_(3) thin films which were grown on the c-plane sapphire substrates by molecular beam epitaxy.Then...In this work,metal–semiconductor–metal solar-blind ultraviolet photoconductors were fabricated based on theβ-Ga_(2)O_(3) thin films which were grown on the c-plane sapphire substrates by molecular beam epitaxy.Then,the effects ofβ-Ga_(2)O_(3) annealing on both its material character-istics and the device photoconductivity were studied.Theβ-Ga_(2)O_(3) thin films were annealed at 800,900,1000,and 1100°C,respectively.Moreover,the annealing time was fixed at 2 h,and the annealing ambients were oxygen,nitro-gen,and vacuum(4.9×10^(-4 )Pa),respectively.The crys-talline quality and texture of theβ-Ga_(2)O_(3) thin films before and after annealing were investigated by X-ray diffraction(XRD),showing that higher annealing temperature can result in a weaker intensity of(402)diffraction peak and a lower device photoresponsivity.Furthermore,the vacuum-annealed sam-ple exhibits the highest photoresponsivity compared with the oxygen-and nitrogen-annealed samples at the same annealing temperature.In addition,the persistent photoconductivity effect is effectively restrained in the oxygen-annealed sample even with the lowest photoresponsivity.展开更多
Co-based amorphous films containing Nb are the ideal material to make thin film magnetic heads and thin film inductances because of their superior properties such as very high permeability, better frequency characteri...Co-based amorphous films containing Nb are the ideal material to make thin film magnetic heads and thin film inductances because of their superior properties such as very high permeability, better frequency characteristic, very low magnetostriction constant, higher crystalline temperature, low loss, wear-resistance and corrosion-resistance.展开更多
基金This work was supported by the National Natural Science Foundation of China(No.50071017)the National High-Tech Program of China(No.2002A A302507).
文摘It has been reported that application of pulsed biases in arc ion plating could effectively eliminate droplet particles. The present paper aims at experimental verification of a physical model proposed previously by us which is based on particle charging and repulsion in the pulsed plasma sheath. An orthogonal experiment was designed for this purpose, using the electrical parameters of the pulsed bias for the deposition of TiN films on stainless steel substrates. The effect of these parameters on the amount and the size distribution of the particles were analyzed, and the results provided sufficient evidence for the physical model.
基金This work was financially supported by the National Natural Science Foundation of China (10574085) the Natural Science Foundation of Shanxi Province, China (20041032).
文摘[CoPt 1.5 ml/ZrO2 xnm]10 multilayer films were deposited on glass substrates by magnetron sputtering and then annealed in vacuum at 600℃ for 30 min. Their structures and magnetic properties were investigated as a function of ZrO2 content. The results show that the grain size and coercivity first increase and then decrease with the increase in ZrO2 content. The maximum coercivity and grain size are obtained at 37 vol.% of ZrO2. The content of ZrO2 in the film plays an important role in the separation of CoPt grains and in the reduction of intergrain exchange interaction. On the basis of the studies of angular dependent coercivity, it is found that the magnetization reversal of CoPt films with （111 ） texture is different from either the domain wall motion or the S-W type of rotation mode.
基金the National Natural Science Foundation of China(No.61223002)the Research Foundation for the Doctoral Program of Higher Education of China(No.2012018530003)。
文摘In this work,metal–semiconductor–metal solar-blind ultraviolet photoconductors were fabricated based on theβ-Ga_(2)O_(3) thin films which were grown on the c-plane sapphire substrates by molecular beam epitaxy.Then,the effects ofβ-Ga_(2)O_(3) annealing on both its material character-istics and the device photoconductivity were studied.Theβ-Ga_(2)O_(3) thin films were annealed at 800,900,1000,and 1100°C,respectively.Moreover,the annealing time was fixed at 2 h,and the annealing ambients were oxygen,nitro-gen,and vacuum(4.9×10^(-4 )Pa),respectively.The crys-talline quality and texture of theβ-Ga_(2)O_(3) thin films before and after annealing were investigated by X-ray diffraction(XRD),showing that higher annealing temperature can result in a weaker intensity of(402)diffraction peak and a lower device photoresponsivity.Furthermore,the vacuum-annealed sam-ple exhibits the highest photoresponsivity compared with the oxygen-and nitrogen-annealed samples at the same annealing temperature.In addition,the persistent photoconductivity effect is effectively restrained in the oxygen-annealed sample even with the lowest photoresponsivity.
基金Project supported by the National Natural Science Foundation of China
文摘Co-based amorphous films containing Nb are the ideal material to make thin film magnetic heads and thin film inductances because of their superior properties such as very high permeability, better frequency characteristic, very low magnetostriction constant, higher crystalline temperature, low loss, wear-resistance and corrosion-resistance.
