Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and ph...Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant （e）, loss tangent （tan6）, and AC conductivity （cry） reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium （4.04 at%）, a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.展开更多
文摘Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant （e）, loss tangent （tan6）, and AC conductivity （cry） reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium （4.04 at%）, a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.
