Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

Indium doped CsPbI3 films for inorganic perovskite solar cells with efficiency exceeding 17%

In recent years,all-inorganic perovskite materials have set off a research boom owing to features,such as good thermal stability,suitable bandgap,and fascinating optical properties.However,the power conversion efficiency(PCE)and the ambient stability of all-inorganic perovskite solar cells still remain a challenge.Herein,we investigate the effect of the addition of InI3 into CsPbI3 film on the corresponding device.InI3 incorporation could retard the crystallization process and control the growth rate of CsPbI3 polycrystalline films,yielding a high quality film with large grains and few voids.The increment in electrostatic potential and the reduction of carrier recombination enabled the open-circuit voltage of fabricated perovskite solar cell to be increased from 0.89 to 0.99 V.The champion device delivered a power conversion efficiency of 17.09%,which is higher than 14.36%for the reference device.And the InI3-included solar cell without any encapsulation retained 77%of its original efficiency after 860 h aging at room temperature in N2 condition.

Promoted CO2 electroreduction over indium-doped SnP3: A computational study

It is generally considered that the hydrogenation of CO2 is the critical bottleneck of the CO2 electroreduction.In this work,with the aid of density functional theory(DFT)calculations,the catalytic hydrogenation of CO2 molecules over Indium-doped SnP3 catalyst were systematically studied.Through doping with indium(In)atom,the energy barrier of CO2 protonation is reduced and OCHO*species could easily be generated.This is mainly due to the p orbital of In exhibits strong hybridization with the p orbital of O,indicating that there is a strong interaction between OCHO*and In-doped SnP3 catalyst.As a result,In-doped SnP3 possesses high-efficiency and high-selectivity for converting CO2 into HCOOH with a low limiting potential of-0.17 V.Our findings will offer theoretical guidance to CO2 electroreduction.

Realizing n-type CdSb with promising thermoelectric performance

Realizing high performance in both n-type and p-type materials is essential for designing efficient ther-moelectric devices.However,the doping bottleneck is often encountered,i.e.,only one type of conduction can be realized.As one example,p-type CdSb with high thermoelectric performance has been discovered for several decades,while its n-type counterpart has rarely been reported.In this work,the calculated band structure of CdSb demonstrates that the valley degeneracy is as large as ten for the conduction band,and it is only two for the valence band.Therefore,the n-type CdSb can potentially realize an ex-ceptional thermoelectric performance.Experimentally,the n-type conduction has been successfully real-ized by tuning the stoichiometry of CdSb.By further doping indium at the Cd site,an improved room-temperature electron concentration has been achieved.Band modeling predicts an optimal electron con-centration of∼2.0×1019 cm−3,which is higher than the current experimental values.Therefore,future optimization of the n-type CdSb should mainly focus on identifying practical approaches to optimize the electron concentration.

Photoanode Activity of ZnO Nanotube Based Dye-Sensitized Solar Cells

Vertical ZnO nanotube （ZNT） arrays were synthesized onto an indium doped tin oxide （ITO） glass substrate by a simple electrochemical deposition technique followed by a selective etching process. Scanning electron microscopy （SEM） showed formation of well-faceted hexagonal ZNT arrays spreading uniformly over a large area. X-ray diffraction （XRD） of ZNT layer showed substantially higher intensity for the （0002） diffraction peak, indicating that the ZnO crystallites were well aligned with their c-axis. Profilometer measurements of the ZNT layer showed an average thickness of -7 μm. Diameter size distribution （DSD） analysis showed that ZNTs exhibited a narrow diameter size distribution in the range of 65-120 nm and centered at -75 nm. The photoluminescence （PL） spectrum measurement showed violet and blue luminescence peaks that were centered at 410 and 480 nm, respectively, indicating the presence of internal defects. Ultra-violet （UV） spectroscopy showed major absorbance peak at ,-348 nm, exhibiting an increase in energy gap value of 3.4 eV. By employing the formed ZNTs as the photo-anode for a dye-sensitized solar cell （DSSC）, a full-sun conversion efficiency of 1.01% was achieved with a fill factor of 54%. Quantum efficiency studies showed the maximum of incident photon-to-electron conversion efficiency in a visible region located at 590-550 nm range.