期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Analysis of reliability factors of MEMS disk resonator under the strong inertial impact
1
作者 董林玺 俞权 +1 位作者 包金艳 陶家平 《Journal of Semiconductors》 EI CAS CSCD 2014年第7期102-106,共5页
Increasing the bias voltage is a method of reducing the motional resistance of the capacitive disk res- onator to match the impedance of the RF circuit. But there are few reports on the study of reliable working range... Increasing the bias voltage is a method of reducing the motional resistance of the capacitive disk res- onator to match the impedance of the RF circuit. But there are few reports on the study of reliable working range of bias voltage under the shock and vibration environment. Therefore, the reliability of disk resonator under the step and pulse acceleration impact respectively is systematically analyzed in this paper. By the expression of the biggest inertial acceleration the disk can bear under the reliable condition, the maximal reliable range curves of the disk resonator under the dynamic impact environment are obtained. According to the actual sizes of disk in the literature, it can be seen that when a step shock of 13000g is supplied, the reliability range is reduced to 75% compared with the original state. For the pulse shock, the reliability range is related to the pulse amplitude and time width. Research of this paper can provide the basis for the selection of bias voltage of disk resonator under the inertial shock. 展开更多
关键词 MEMS resonator inertial impact bias voltage RELIABILITY
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部