Effect of Mg and Si on infiltration behavior of Al alloys pressureless infiltration into porous SiCp preforms

The effect of Mg and Si additon to Al matrix on infiltration kinetics and rates of Al alloys pressureless infiltration into porous SiCp preform was investigated by observing the change of infiltration distance with time as the Al alloys infiltrate into SiCp preforms at different temperatures.The results show that infiltration of SiCp preforms by Al melt is a thermal activation process and there is an incubation period before the infiltration becomes stable.With the increase of Mg content in the Al alloys from 0wt% to 8wt%,the infiltration will become much easier,the incubation period becomes shorter and the infiltration rate is faster,but these effects are not obvious when the Mg content is higher than 8wt%.As for Si addition to the Al alloys,it has no obvious effect on the incubation period,but the infiltration rate increases markedly with the increase of Si content from 0wt% to 12wt% and the rate has no obvious change when the content is bigger than 12wt%.The effect of Mg and Si on the incubation period is related to the infiltration mechanism of Al pressureless infiltration into SiCp preforms and their impact on the infiltration rate is a combined result from viscosity and surface tension of Al melt and SiC-Al wetting ability.

Picosecond Laser Machining of Deep Holes in Silicon Infiltrated Silicon Carbide Ceramics

Silicon infiltrated silicon carbide （Si-SiC） ceramics, as high hardness materials, are difficult to machine, especially drilling micro-holes. In this study, the interaction of picosecond laser pulses （1 ps at 1 030 nm） with Si-SiC ceramics was investigated. Variations of the diameter and depth of circular holes with the growth of the laser energy density were obtained. The results indicate that the increase of machining depth follows a nonlinear relation with the increasing of laser energy density, while the diameter has little change with that. Moreover, it is found that some debris and particles are deposited around and inside the holes and waviness is in the entrance and at walls of the holes after laser processing.

Capillary infiltration of liquid silicon in carbon nanotubes:A molecular dynamics simulation

In this work,by simplifying the nanopores of porous C/C preform with single-walled carbon nanotubes(SWCNT)or double-walled carbon nanotubes(DWCNTs),the infiltration of liquid Si in the SWCNTs and DWCNTs was studied by molecular dynamics(MD)simulations.As a result,a quantitative relationship between tube diameter and liquid Si infiltration rate was established,which has been successfully ap-plied to reproduce the available experiment result.The obtained relationship indicates that the capillary infiltration of liquid Si at the nanoscale still conforms to the classic Lucas-Washburn law,however,the liquid Si infiltration quickly stops in small tubes with a diameter of less than 3 nm due to an obvious contraction of the tube wall.This work may provide theoretical guidance for pore structure optimization of porous C/C preform to fabricate high-density C/SiC composites.

Oxidation behavior of CVI,MSI and CVI+MSI C/SiC composites

The oxidation behavior of chemical vapor infiltration(CVI),molten silicon infiltration(MSI)and CVI+MSI C/SiC composites at 500-1 400℃was studied.The oxidation below 900℃increased successively for CVI,CVI+MSI and MSI composites.However,the oxidation of CVI composite above 1 000 ℃was much faster thanthat of MSI and CVI+MSI composites. As active carbon atoms produced by siliconization of fibers during MSI process were oxidized first and decreased initial oxidation temperature.The initial oxidation temperature of MSI,MSI+CVI and CVI composites was 526,552 and 710℃,respectively.New active carbon atoms were generated due to the breaking of 2D molecular chains during oxidation,so the activation energy of three C/SiC composites was decreased gradually at 500-800℃with oxidation process,exhibiting a self-catalytic characteristic.

Progress in Recrystallized SiC and Its Composites

Recrystallized silicon carbide（ RSi C）,a high purity Si C material sintered by the process of evaporation-condensation without any additives,is one of the most important structural materials in the fields of high temperatures. However,its low density and porous structure caused by the sintering mechanism in the absence of shrinkage,restrict its wide applications in engineering.This paper reviews the research progress and related technologies on the preparation of high-density RSi C and its composites. RSi C with relative high density up to 2. 75g·cm- 3can be obtained by a combination of pretreatment to Si C raw materials such as reshaping,modification and particle size distribution,and appropriate forming method. Post treatments such as cyclic pyrolysis and impregnation- recrystallization,and slurry impregnation- recrystallization are needed for the further density increase of RSi C（ 2. 99 g·cm- 3）. In addition,high performance RSi C- Mo Si2 and RSi C- Al composites obtained by melt infiltration are also reviewed.

Effect of surface self-nanocrystallization and Si infiltration on Si diffusion behavior, hardness and magnetic properties of pure Fe

Surface nanocrystallization of pure Fe was performed using an improved surface treatment process. The phase transformation and Si infiltration depth of the pure Fe before and after surface mechanical attrition treatment （SMAT） were compared by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The results indicated that nanocrystallization of Fe surface was achieved using SMAT, which resulted in deeper penetration of Si. Prolonging time of SMAT and Si infiltration also resulted in increasing microhardness, with the hardness first increasing with increasing distance from the surface and then decreasing. Furthermore, longer Si infiltration time, nanocrystallization of Si and longer SMAT time resulted in higher saturation magnetization （MS）. The greatest Si penetration depth （150 μm）, maximum hardness （280 HV）, and maximum MS （1.849 × 10^6 A/m） were achieved after SMAT for 45 min and Si infiltration for 9 h. The interaction between adjacent grains after surface nanocrystallization leads to a region of the magnetic domain wall structure located at the grain boundary, which causes the remanence enhancement effect.

Biomorphic SiC from lotus root

Biomorphic silicon carbide （bioSiC） with macro-channels and alveolate micropores was prepared by spontaneous infiltration of melted silicon into a carbon template derived from lotus root at 1600cC. The carbon template and purified bioSiC samples were characterized by X-ray diffraction, scanning electron microscopy, camera and mercury intrusion. The results suggest that the bioSiC mainly consists of β-SiC and perfectly replicates the shape and microstructure of the carbon template. The bioSiC has a mean pore diameter of 91.1 μm and a porosity of 50.1%, both similar to those of the carbon template, 92.3 μm and 50.7%, respectively.