A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15...A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.展开更多
We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and m...We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.展开更多
This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the tem...This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the temperature-and bias-dependent photocurrent spectra of very long wavelength(VLW) GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. Aided by band structure calculations, we propose a model of the double excited states that determine the working mechanism in VLW QWIPs. Secondly, we present an overview of a VLW QWIP focal plane array(FPA)with 320×256 pixels based on the bound to quasi-bound(BTQB) design. The technology of the manufacturing FPA based on the QWIP structures has been demonstrated. At the operating temperature of 45 K, the detectivity of QWIP FPA is larger than 1.4×10^(10) cm·Hz^(1/2)/W with a cutoff wavelength larger than 16 μm. Finally, to meet the needs of space applications, we proposed a new long wavelength quantum cascade detector with a broadband detection ranging from 7.6 μm to 10.4 μm. With a pair of identical coupled quantum wells separated by a thin barrier, acting as absorption regions, the relative linewidth(?E/E) of response can be dramatically broadened to 30.7%. It is shown that the spectral shape and linewidth can be tuned by the thickness of the thin barrier, while it is insensitive to the working temperature. The device can work above liquid nitrogen temperature with a peak responsivity of 63 mA/W and Johnson noise limited detectivity of 5.1×10~9 cm·Hz^(1/2)/W.展开更多
We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, ...We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.展开更多
A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution inf...A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution infrared focal plane array applications is proposed. The detector bias error in this structure is less than 0.1 mV. The input resistance is ideally zero, which is important to obtain high injection efficiency. Unit-cell occupies 10 μm× 15 μm area and consumes less than 0.4 mW power. Charge storage capacity is 3 × 108 electrons. The function and performance of the proposed readout circuit have been verified by experimental results.展开更多
Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and...Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and bad pixel compensation. The proposed detection algorithm is a combination of median filtering and statistic method. Single frame median filtering is used to locate approximate map, then statistic method and threshold value is used to get the accurate location map of bad pixels. When the bad pixel detection is done, neighboring pixel replacement algorithm is used to compensate them in real-time. The effectiveness of this approach is test- ed by applying it to I-IgCATe infrared video. Experiments on real infrared imaging sequences demonstrate that the proposed algorithm requires only a few frames to obtain high quality corrections. It is easy to combine with traditional static methods, update the pre-defined location map in real-time.展开更多
For infrared focal plane graded during signal acquisition array sensors, imagery is departicularly nonuniformity. In this paper, an adaptive nonuniformity correction technique is proposed which simultaneously estimate...For infrared focal plane graded during signal acquisition array sensors, imagery is departicularly nonuniformity. In this paper, an adaptive nonuniformity correction technique is proposed which simultaneously estimates detector-level and readout- channel-level correction parameters using neural network approaches. Firstly, an improved neural network framework is designed to compute the desired output. Secondly, an adaptive learning rate rule is used in the gain and offset parameter estimation process. Experimental results show the proposed algorithm can achieve a faster convergence speed and better stability, remove nonuniformity and track parameters drift effectively, and present a good adaptability to scene changes and nonuniformity conditions.展开更多
A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS inv...A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K （F / # = 0.8） and 588 inK, respectively.展开更多
基金supported by the National Basic Research Program of China(Grant Nos.2013CB932904 and 2011CB922201)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)the National Natural Science Foundation of China(Grant Nos.61274013,61290303,and 61306013)
文摘A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10732080 and 10627201)the National Basic Research Program of China (Grant No. 2006CB300404)
文摘We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.
基金Project supported by National Key Research and Development Program of China(Grant No.2016YFB0402402)the National Natural Science Foundation of China(Grant No.61521005)
文摘This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the temperature-and bias-dependent photocurrent spectra of very long wavelength(VLW) GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. Aided by band structure calculations, we propose a model of the double excited states that determine the working mechanism in VLW QWIPs. Secondly, we present an overview of a VLW QWIP focal plane array(FPA)with 320×256 pixels based on the bound to quasi-bound(BTQB) design. The technology of the manufacturing FPA based on the QWIP structures has been demonstrated. At the operating temperature of 45 K, the detectivity of QWIP FPA is larger than 1.4×10^(10) cm·Hz^(1/2)/W with a cutoff wavelength larger than 16 μm. Finally, to meet the needs of space applications, we proposed a new long wavelength quantum cascade detector with a broadband detection ranging from 7.6 μm to 10.4 μm. With a pair of identical coupled quantum wells separated by a thin barrier, acting as absorption regions, the relative linewidth(?E/E) of response can be dramatically broadened to 30.7%. It is shown that the spectral shape and linewidth can be tuned by the thickness of the thin barrier, while it is insensitive to the working temperature. The device can work above liquid nitrogen temperature with a peak responsivity of 63 mA/W and Johnson noise limited detectivity of 5.1×10~9 cm·Hz^(1/2)/W.
基金supported by the National Natural Science Foundation of China(Nos.U1037602,61274013,61290303)the National Basic Research Program of China(Nos.2010CB327602,2012CB932701,2013CB932904)
文摘We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.
文摘A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution infrared focal plane array applications is proposed. The detector bias error in this structure is less than 0.1 mV. The input resistance is ideally zero, which is important to obtain high injection efficiency. Unit-cell occupies 10 μm× 15 μm area and consumes less than 0.4 mW power. Charge storage capacity is 3 × 108 electrons. The function and performance of the proposed readout circuit have been verified by experimental results.
基金Sponsored by the National Natural Science Foundation of China(60877060)
文摘Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and bad pixel compensation. The proposed detection algorithm is a combination of median filtering and statistic method. Single frame median filtering is used to locate approximate map, then statistic method and threshold value is used to get the accurate location map of bad pixels. When the bad pixel detection is done, neighboring pixel replacement algorithm is used to compensate them in real-time. The effectiveness of this approach is test- ed by applying it to I-IgCATe infrared video. Experiments on real infrared imaging sequences demonstrate that the proposed algorithm requires only a few frames to obtain high quality corrections. It is easy to combine with traditional static methods, update the pre-defined location map in real-time.
基金supported by the National Natural Science Foundation of China (61101199)the Natural Science Foundation of Jiangsu Province (K2011699)the Colleges and Universities Innovation Projects (CX08B 045Z)
文摘For infrared focal plane graded during signal acquisition array sensors, imagery is departicularly nonuniformity. In this paper, an adaptive nonuniformity correction technique is proposed which simultaneously estimates detector-level and readout- channel-level correction parameters using neural network approaches. Firstly, an improved neural network framework is designed to compute the desired output. Secondly, an adaptive learning rate rule is used in the gain and offset parameter estimation process. Experimental results show the proposed algorithm can achieve a faster convergence speed and better stability, remove nonuniformity and track parameters drift effectively, and present a good adaptability to scene changes and nonuniformity conditions.
基金Project supported by the Chinese Academy of Sciences Knowledge Innovation Project(No.07YF031001)the Natural Science Foundation of Jiangsu Province,China(No.BK2012219),the Key Lab of Microelectronics Device and Integration Technology,China
文摘A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K （F / # = 0.8） and 588 inK, respectively.
