A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration i...A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration is high up to 7.8 × 10-12. The calibration curve of boron concentration in high-purity silicon has been obtained, from which the experimental value of calibration factor of boron concentration in silicon is demonstrated to be 1.15 × 1013 cm-1.展开更多
文摘A Nicolet-200SXV FT-IR spectrometer combined with an exciting light set-up has been applied to determine the shallow impurity concentration in detector-grade silicon. The detection sensitivity of boron concentration is high up to 7.8 × 10-12. The calibration curve of boron concentration in high-purity silicon has been obtained, from which the experimental value of calibration factor of boron concentration in silicon is demonstrated to be 1.15 × 1013 cm-1.