A New Method for Blood NT-proBNP Determination Based on a Near-infrared Point of Care Testing Device with High Sensitivity and Wide Scope

Objective To develop a rapid, highly sensitive, and quantitative method for the detection of NT-proBNP levels based on a near-infrared point-of-care diagnostic （POCT） device with wide scope. Methods The lateral flow assay （LFA） strip of NT-proBNP was first prepared to achieve rapid detection. Then, the antibody pairs for NT-proBNP were screened and labeled with the near-infrared fluorescent dye Dylight-800. The capture antibody was fixed on a nitrocellulose membrane by a scribing device. Serial dilutions of serum samples were prepared using NT-proBNP-free serum series. The prepared test strips, combined with a near-infrared POCT device, were validated by known concentrations of clinical samples. The POCT device gave the output of the ratio of the intensity of the fluorescence signal of the detection line to that of the quality control line. The relationship between the ratio value and the concentration of the specimen was plotted as a work curve. The results of 62 clinical specimens obtained from our method were compared in parallel with those obtained from the Roche E411 kit. Results Based on the log-log plot, the new method demonstrated that there was a good linear relationship between the ratio value and NT-proBNP concentrations ranging from 20 pg/mL to 10 ng/mL. The results of the 62 clinical specimens measured by our method showed a good linear correlation with those measured by the Roche E411 kit. Conclusion The new LFA detection method of NT-proBNP levels based on the near-infrared POCT device was rapid and highly sensitive with wide scope and was thus suitable for rapid and early clinical diagnosis of cardiac impairment.

Design and Realization of Infrared Telecontrol Code Measuring Device

The paper mainly introduces concrete design of the hardware and program steps of Infrared Telecontrol Code Measuring Device based on AT89C51RC. In addition, it also gives out the design circuit of infrared transmitter and infrared receiver and the typical design circuit of the system, and the application method as well. Through particularly researching on sending and receiving technology of in- frared, a precise method decoding the signal send by infrared controller and its circuit is designed.

TEM study on Si_(0.65) Ge_(0.35) /p Si HIP infrared detector

Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si1-xGex/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (RoA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.

128×128 element PtSi infrared CCD image sensor

A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill factor of 40 percent,the nonuniformity of 5% or less and the dynamic range of over or equal to 50 dB.The noise equivalent temperature difference is 0.2 K with f/1.0 optics at 300 K background. In this paper,the principle of operation,design consideration and fabrication technology for the device are described.

Dot Size Thermal Objects Detection in Atmosphere of Infrared Range

The article deals with the experimental studies of atmosphere indistinct radiation structure. The information extraction background of dot size thermal object presence in atmosphere is reasonable. Indistinct generalization of experimental study regularities technique of space-time irregularity radiation structure in infrared wave range is offered. The approach to dot size thermal object detection in atmosphere is proved with a help of threshold method in the thermodynamic and turbulent process conditions, based on the indistinct statement return task solution.

Dynamic infrared scene simulation using grayscale modulation of digital micro-mirror device

Dynamic infrared scene simulation is for discovering and solving the problems encountered in designing, developing and manufacturing infrared imaging guidance weapons. The infrared scene simulation is explored by using the digital grayscale modulation method. The infrared image modulation model of a digital micro-mirror device （DMD） is established and then the infrared scene simulator prototype which is based on DMD grayscale modulation is developed. To evaluate its main parameters such as resolution, contrast, minimum temperature difference, gray scale, various DMD subsystems such as signal decoding, image normalization, synchronization drive, pulse width modulation （PWM） and DMD chips are designed. The infrared scene simulator is tested on a certain infrared missile seeker. The test results show preliminarily that the infrared scene simulator has high gray scale, small geometrical distortion and highly resolvable imaging resolution and contrast and yields high-fidelity images, thus being able to meet the requirements for the infrared scene simulation inside a laboratory.

Integrative Multi-Spectral Sensor Device for Far-Infrared and Visible Light Fusion

Infrared and visible light image fusion technology is a hot spot in the research of multi-sensor fusion technology in recent years. Existing infrared and visible light fusion technologies need to register before fusion because of using two cameras. However, the application effect of the registration technology has yet to be improved. Hence, a novel integrative multi-spectral sensor device is proposed for infrared and visible light fusion, and by using the beam splitter prism, the coaxial light incident from the same lens is projected to the infrared charge coupled device （CCD） and visible light CCD, respectively. In this paper, the imaging mechanism of the proposed sensor device is studied with the process of the signals acquisition and fusion. The simulation experiment, which involves the entire process of the optic system, signal acquisition, and signal fusion, is constructed based on imaging effect model. Additionally, the quality evaluation index is adopted to analyze the simulation result. The experimental results demonstrate that the proposed sensor device is effective and feasible.

Self-powered electrochromic devices with tunable infrared intensity

Triboelectric nanogenerator （TENG） is an efficient way to convert ambient mechanical energy into electricity to power up portable electronics. In this work, a flexible inflared electrochromical device （IR-ECD） with stable performances was assembled with a TENG for building self-powered infrared detector with tunable intensity. As driven by TENG, the electrochromic device could be operated in the mid-lR region due to the reversible electrochromic reactions. An average infrared reflectance contrast of 46% was achieved in 8-14 μm regions and as well a clear thermal image change can be observed. This work indicates that the TENG-driven infrared electrochromical device has potential for use in self-powered camouflage and tbermal control.

First-principles calculations of nitrogen-doped antimony triselenide： A prospective material for solar cells and infrared optoelectronic devices

This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb2Se3 crystal. When one and two N atoms are introduced into the Sb2Se3 lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb2Se3 from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants el（0） for Sb16Se24, SblsN1Se24, Sb14N2Se24, Sb16Se23N1, and Sb16Se22N2 are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n（0） for Sb16Se24, SblsN1Se24, Sb14N2Se24, Sb16Se23N1, and Sb16Se22N2 are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb2Se3is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.

基于ToF红外图像的手部轻量化检测算法设计与优化

嵌入式设备上实现快速精准的手部检测主要面临两个挑战:一是复杂的深度学习网络很难实现实时的手部检测;二是场景复杂性导致基于RGB彩色图像的手部检测算法准确率下降。与主流基于RGB图像的检测技术不同,基于ToF红外图像的轻量化手部检测算法实现了红外图像中手部的精准快速检测。首先,通过自主研发设备采集了22 419张静态红外图片,构建了用于手部检测的红外数据集;其次,通过对通用目标检测算法进行轻量化改进,设计了RetinaHand轻量化手部检测网络,其中采用了MobileNetV1和ShuffleNetV2两种不同的轻量化网络作为模型骨干网络,并提出了一种融合注意力机制的特征金字塔结构Attention-FPN;最后,在红外数据集上与常规方法进行了对比实验,验证了该方法的有效性。

医用润滑剂组成结构的红外光谱研究

采用中红外(MIR)光谱开展了避孕套中医用润滑剂结构的研究。结果发现:医用润滑剂主要包括固态润滑剂和液态润滑剂,其中固态润滑剂的主要结构是高岭石族物质,而液态润滑剂的主要结构是水溶性硅油。研究为探索计生用品中的医用润滑剂结构建立了一种方法,具有一定的应用价值。

红外光疼痛治疗仪结合甲氨蝶呤治疗类风湿关节炎患者疼痛、焦虑抑郁的对照研究

目的 对于红外光疼痛治疗仪联合甲氨蝶呤对类风湿关节炎患者的治疗效果和安全性进行评估,同时观察其对患者焦虑、抑郁状况的改善能力。方法 选取76名存在焦虑或抑郁病症的类风湿性关节炎患者,随机分为对照组和治疗组,各38名。两组均进行常规药物治疗,治疗组的患者另加红外光疼痛治疗仪的附加治疗,疗程为10d。采用ACR50、多项临床观察指标、焦虑自评量表(SAS)、抑郁自评量表(SDS)对干预前后进行比较。结果治疗10d后,治疗组ACR50有效率高于对照组,但差异无显著性(P>0.05)。治疗组自我VAS评定、医生评定评分均降低,晨僵情况改善,疼痛关节及肿胀关节缓解数目优于对照组,差异有统计学意义(P<0.05)。治疗组SAS、SDS评分改善程度优于对照组,差异有统计学意义(P<0.05)。结论 使用红外光疼痛治疗仪对改善类风湿关节炎症状、控制疾病活动度有积极效果,同时也能减少患者焦虑、抑郁等不良情绪。

低压开关柜中温升监测装置的应用分析

旨在研究低压开关柜的温升监测装置设计与应用,考虑到开关柜结构复杂、部件温度过高可能导致过热故障的问题。通过研究发现,温升在线监测装置能够有效感知开关柜内零部件温度变化,为控制温度提供有力支持。设计包括远红外测温技术、数据采集模块、上位机软件以及报警系统的综合应用,以全面监测开关柜区域。通过大数据和计算机技术分析温度变化数据,预防过热故障的发生,提高设备可靠性,延长寿命,对电力系统的稳定运行具有积极意义。

不同结构及新型材料在硅基光电探测器上的应用展望

硅基光电探测器是硅光子集成电路中的核心器件,在导弹制导系统中起着高效探测目标并精确跟踪目标的关键作用。本文综述了国内外关于硅基光电探测器的研究进展和应用前景,并探讨了不同结构和材料对探测器性能的影响。通过回顾相关文献并分析研究成果,重点关注了PIN结构、肖特基结构、GeSn材料和二维材料在硅基光电探测器中的应用情况。随着研究的深入,硅基光电探测器的响应速度和灵敏度得到了显著提高,并且实现了对从紫外波段到红外波段宽范围内的探测需求,旨在提高硅基光电探测器的响应度、缩短响应时间和降低暗电流的同时,探索新的结构和材料,以进一步拓展硅基光电探测器在红外成像和光通信系统等领域的应用范围。

聚苯胺红外电致变色器件研究进展

电致变色是材料反射、吸收等光学性质在外加电场驱动下发生稳定、可逆变化的现象,在不同波段可表现为颜色、红外发射率等变化。红外电致变色器件(IR-ECDs)能够动态调节物体的红外光学特性,在自适应伪装、热管理等应用中受到广泛关注。作为最有代表性的有机电致变色材料,聚苯胺(PANI)制备方法简单,电化学性能优异,在多波段电致变色领域有着巨大的潜在应用价值。本文从电致变色器件结构出发,介绍了从可见电致变色到红外电致变色的原理和器件结构的演变,对近年来增强聚苯胺红外电致变色器件性能的策略和最新进展进行了归纳和分析,讨论了其多功能化应用的拓展方向,最后对所面临的挑战与未来的发展方向进行了总结与展望,为今后发展优异性能的IR-ECDs提供了参考,希望能够对本领域研究者有所启发,促进电致变色领域的发展。

手持式马铃薯干物质含量无损检测装置设计与试验

面向马铃薯品质抽检的需求,研发了手持式马铃薯干物质无损检测装置。装置硬件部分包括光谱采集模块、电路控制模块、控制与显示模块、外壳模块,装置设计为枪形,尺寸为180 mm×85 mm×210 mm。利用装置采集可见近红外漫反射光谱,比较Savitzky-Golay卷积平滑(SM)、一阶导数(first-order derivative,FD)、多元散射校正(multiple scattering correction,MSC)和标准正态变量变换(standard normal variate transformation,SNV)的预处理方式,SM结果较优。采用竞争性自适应重加权采样(competitive adapative reweighted sampling,CARS)筛选27个特征波长,建立马铃薯干物质含量的支持向量回归(support vector regression,SVR)预测模型,结果显示,验证集决定系数和均方根误差分别为0.802和0.98%。基于QT开发工具编写装置软件,包括黑白校正与测量模块、电量显示模块、光谱数据显示模块、保存数据模块、光谱数据刷新模块、检测结果显示模块。开展装置验证,预测均方根误差为1.01%,单次测量平均耗时为0.62 s。结果表明,手持式马铃薯干物质无损检测装置可快速、准确检测干物质含量,具有在马铃薯生产源头与加工现场应用的潜力。

面向阿尔茨海默病的非侵入性光生物调节治疗

据我国阿尔茨海默病协会官方网站显示,在我国60岁及以上老年人中约有1500万痴呆患者,其中1000万是阿尔茨海默病患者。随着我国人口结构老龄化,这一数据还将不断攀升。目前,按照现代医学寻找治疗靶点的逻辑思路,尚无有效治疗阿尔茨海默病的因应对策,药物治疗有许多限制,外科手术也无能为力。对此,我们不得不重新思考传统的系统化、整体化和功能化观点,并针对产生阿尔茨海默病背后的先导因素采取相应的治疗策略。近年来,关于光生物调节(PBM)治疗神经退行性疾病的研究逐渐增多,越来越多的学者尝试采用非侵入性PBM方式延缓、抑制,甚至逆转神经元退行性病变。在神经疾病治疗方面,PBM作为一种新的治疗方式,具有无创伤、无副作用、可以调节氧自由基浓度、激活干细胞调节细胞转录、刺激神经递质分泌、激发突触与神经元生长等显著优点。这些优点是其他治疗方式无与伦比的。本文综述了现代医学关于阿尔茨海默病治疗的靶点,阐释了PBM治疗阿尔茨海默病的机制,从动物模型、临床试验、病理与细胞模型方面系统总结了PBM治疗阿尔茨海默病的进展,并对未来发展做出展望,旨在为探索阿尔茨海默病临床干预新措施以及发展先进治疗方法和医疗器械提供参考。

Hot-carrier engineering for two-dimensional integrated infrared optoelectronics

Plasmonic hot carrier engineering holds great promise for advanced infrared optoelectronic devices.The process of hot carrier transfer has the potential to surpass the spectral limitations of semiconductors,enabling detection of subbandgap infrared photons.By harvesting hot carriers prior to thermalization,energy dissipation is minimized,leading to highly efficient photoelectric conversion.Distinguished from conventional band-edge carriers,the ultrafast interfacial transfer and ballistic transport of hot carriers present unprecedented opportunities for high-speed photoelectric conversion.However,a complete description on the underlying mechanism of hot-carrier infrared optoelectronic device is still lacking,and the utilization of this strategy for tailoring infrared response is in its early stages.This review aims to provide a comprehensive overview of the generation,transfer and transport dynamics of hot carriers.Basic principles of hot-carrier conversion in heterostructures are discussed in detail.In addition,progresses of two-dimensional(2D)infrared hot-carrier optoelectronic devices are summarized,with a specific emphasis on photodetectors,solar cells,light-emitting devices and novel functionalities through hot-carrier engineering.Furthermore,challenges and prospects of hot-carrier device towards infrared applications are highlighted.

中红外硅基光波导的发展现状

作为硅光子集成芯片中基本无源器件的硅基光波导是进行光信号传输的通道,其具有良好的性能,且与CMOS(Complementary Metal Oxide Semiconductor)工艺相兼容因而得到广泛应用。用于电信和数据中心的硅光子集成电路已逐步走向商业化。近年来,中红外波段在自由空间通信、传感以及环境监测等领域的潜在应用受到研究者们的广泛关注。文中分析了中红外硅基光波导的研究现状,归纳了SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si_(3)N_(4))、GON(Ge-on Si_(3)N_(4))等波导材料平台和SOPS(Si on Porous Si)、Undercut、Pedestal、Freestanding、Suspended、LOCOS(Local Oxidation of Silicon)以及等离子体结构等制造工艺平台的研究成果。迄今为止,多数单晶硅在MIR(Mid-Infrared)平台的传播损耗大约在0.7~3.0 dB·cm^(-1)。文中讨论并对比了不同类型波导的应用前景,为中红外硅基光波导的研发、应用和商业化提供了参考。