A tightly linked dual ring antenna is designed,and it is specifically tailored for uniformly coupling the microwave magnetic field to the nitrogen-vacancy(NV)center.The designed antenna operates at a center frequency ...A tightly linked dual ring antenna is designed,and it is specifically tailored for uniformly coupling the microwave magnetic field to the nitrogen-vacancy(NV)center.The designed antenna operates at a center frequency of about 2.87 GHz,with a bandwidth of around 200 MHz,allowing it to address multiple resonance peaks in the optically detected magnetic resonance(ODMR)spectrum in an external magnetic field.Moreover,the antenna generates a fairly uniform magnetic field in a range with a radius of 0.75 mm.High resolution imaging of the magnetic field distribution on the surface of the antenna is conducted by using a fiber diamond probe.We also investigate the effect of magnetic field uniformity on the linewidth of ODMR,so as to provide insights into reducing the inhomogeneous broadening of ODMR.展开更多
Quantum-dot laser diodes （QD-LDs） with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers （QD-SOAs） with 7° tilted cavity were fabricated. The infuence of a tilted cavity on optoelectronic ...Quantum-dot laser diodes （QD-LDs） with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers （QD-SOAs） with 7° tilted cavity were fabricated. The infuence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QDSOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design. A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm, which is approximately equal to the homogeneous broadening of quantum dots.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFB2012600)the Shanghai Aerospace Science and Technology Innovation Fund(Grant No.SAST-2022-102).
文摘A tightly linked dual ring antenna is designed,and it is specifically tailored for uniformly coupling the microwave magnetic field to the nitrogen-vacancy(NV)center.The designed antenna operates at a center frequency of about 2.87 GHz,with a bandwidth of around 200 MHz,allowing it to address multiple resonance peaks in the optically detected magnetic resonance(ODMR)spectrum in an external magnetic field.Moreover,the antenna generates a fairly uniform magnetic field in a range with a radius of 0.75 mm.High resolution imaging of the magnetic field distribution on the surface of the antenna is conducted by using a fiber diamond probe.We also investigate the effect of magnetic field uniformity on the linewidth of ODMR,so as to provide insights into reducing the inhomogeneous broadening of ODMR.
基金Project supported by the State Key Development Program for Basic Research of China (No.2006CB604904)the National Natural Science Foundation of China (Nos.60676029,60776037)
文摘Quantum-dot laser diodes （QD-LDs） with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers （QD-SOAs） with 7° tilted cavity were fabricated. The infuence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QDSOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design. A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm, which is approximately equal to the homogeneous broadening of quantum dots.
