Optimization Design of Superluminescent Diodes with RWG Structure for High Efficiency Coupling with SMFs

With the aim of achieving high coupling power of RWG SLDs into SMFs,the structure dependences of the output power and the near field pattern are investigated. The thicknesses of the layers between the active region and the ridge waveguide are optimized by taking into account the injected carrier distribution and local material gain in the SLD cross section.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Recent strategies to enhance the efficiency of hematite photoanodes in photoelectrochemical water splitting

Photoelectrochemical(PEC)water splitting is one of the most promising approaches toward achieving the conversion of solar energy to hydrogen.Hematite is a widely applied photoanode material in PEC water splitting because of its appropriate band structure,non-toxicity,high stability,and low cost.Nevertheless,its relatively low photochemical conversion efficiency limits its application,and enhancing its PEC water splitting efficiency remains a challenge.Consequently,increasing efforts have been rendered toward improving the performance of hematite photoanodes.The entire PEC water splitting efficiency typically includes three parts:the photon absorption efficiency,the separation efficiency of the semiconductor bulk,and the surface injection efficiency.This review briefly discusses the recent advances in studies on hematite photoanodes for water splitting,and through the enhancement of the three above-mentioned efficiencies,the corresponding strategies toward improving the PEC performance of hematite are comprehensively discussed and summarized.

Efficiency analysis of a-SiC:H thin film light emitting diodes

The hole injection,the radiative recombination and the device luminescent efficiencies of amorphous silicon carbide thin film p-i-n junction light emitting diodes are quantitatively calculated,and the effect of the carrier(especially the hole) injection and recombination processes on the device luminescent characteristics are revealed.Without considering the device junction temperature,it is found that the device luminescent efficiency mainly depends on the hole injection efficiency at low field and the hole radiative recombination efficiency at high field respectively.The theoretical analyses are in well agreement with the experimental results.

Luminescent Efficiency in Single-layer Organic Electrophosphorescent Devices

Based on the charge injection and recombination processes and the triplet-triplet annihilation process, a model to calculate the electroluminescent(EL) efficiency is presented. The influences of the applied electric field on the injection efficiency, recombination efficiency and electroluminescent efficiency are discussed. It is found that: (1) The injection efficiency is increasing while the recombination efficiency is decreasing with the applied electric field increasing. (2) The EL efficiency is enhanced at low electric field slowly but is decreasing at high electric field with the increase of applied voltage. (3) The EL efficiency is decreasing with the increase of the host-guest molecular distance (R). So, it is concluded that the EL efficiency in single-layer organic electrophosphorescent devices is dominated by injection efficiency at lower electric field and recombination efficiency at higher electric field.

A new method for evaluating the injection effect of chemical flooding

Hall plot analysis,as a widespread injection evaluation method,however,often fails to achieve the desired result because of the inconspicuous change of the curve shape.Based on the cumulative injection volume,injection rate,and the injection pressure,this paper establishes a new method using the ratio of the pressure to the injection rate（RPI） and the rate of change of the RPI to evaluate the injection efficiency of chemical flooding.The relationship between the RPI and the apparent resistance factor（apparent residual resistance factor） is obtained,similarly to the relationship between the rate of change of the RPI and the resistance factor.In order to estimate a thief zone in a reservoir,the influence of chemical crossflow on the rate of change of the RPI is analyzed.The new method has been applied successfully in the western part of the Gudong 7th reservoir.Compared with the Hall plot analysis,it is more accurate in real-time injection data interpretation and crossflow estimation.Specially,the rate of change of the RPI could be particularly suitably applied for new wells or converted wells lacking early water flooding history.

Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor

Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized, the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.

A molecular cobaloxime cocatalyst and ultrathin FeOOH nanolayers co-modifiedBiVO_(4) photoanode for efficient photoelectrochemical water oxidation

BiVO_(4) has been attracting a lot of interest in photoelectrochemical (PEC) water oxidation due to its efficient solar absorption and appropriate band positions.So far,sluggish water oxidation kinetics and fast photogenerated charge recombination still hinder the PEC performance ofBiVO_(4) .In this study,a novel PEC photoanode was designed by depositing ultrathin FeOOH nanolayers on the surface of nanoporousBiVO_(4) electrode,followed by modification with a cobaloxime (Co(dmgH)_(2)(4-COOH-py)Cl) molecular cocatalyst.Under irradiation of a 100 mW cm^(-2)(AM 1.5G) Xe lamp,the photocurrent density of the cobaloxime/FeOOH/BiVO_(4) composite photoanode reached 5.1 mA cm^(-2)at 1.23 V vs.RHE in 1.0 M potassium borate buffer solution (pH=9.0).The onset potential of the optimal cobaloxime/FeOOH/BiVO_(4) photoanode exhibited a 460 m V cathodic shift relative to bareBiVO_(4) .In addition,the surface charge injection efficiency of the composite photoanode reached~80%at 1.23 V vs.RHE and the incident photon-to-current efficiency (IPCE) reached~88%at 420 nm.

Preparation of Sb2O3/Sb2S3/FeOOH composite photoanodes for enhanced photoelectrochemical water oxidation

A novel Sb2O3/Sb2S3/FeOOH photoanode was fabricated via a simple solution impregnation method along with chemical bath deposition and post-sulfidation.The X-ray diffractometry,Raman measurement,and X-ray photoelectron spectroscopy show that the Sb2O3/Sb2S3/FeOOH thin films are successfully prepared.SEM−EDS analyses reveal that the surface of Sb2O3/Sb2S3 thin films becomes rough after the immersion in the FeCl3 solution.The optimized impregnation time is found to be 8 h.The FeOOH co-catalyst loaded Sb2O3/Sb2S3 electrode exhibits an enhanced photocurrent density of 0.45 mA/cm2 at 1.23 V versus RHE under simulated 1 sun,which is approximately 1.41 times compared to the photocurrent density of the unloaded one.Through the further tests of UV−Vis spectroscopy,the electrochemical impedance spectra,and the PEC measurements,the enhancement can result from the increased light-harvesting ability,the decreased interface transmission impedance,and the remarkably enhanced carrier injection efficiency.

Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes

The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors （NPT-IGBTs） due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper.Wafer lifetimes are measured by aμ-PCD method,and well designed NPT-IGBTs with a final wafer thickness of 500μm are fabricated.The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered.This indicates that anode injection efficiency reduction must be considered in the breakdown model.Furthermore,the parameters related to anode injection efficiency reduction are estimated according to the experimental data.

Analysis of Power Distribution on Beamline Components at Different Neutralization Efficiencies on NBI Test Stand

Neutral beam injection is recognized as one of the most effective means for plasma heating. According to the research plan of the EAST physics experiment, two sets of neutral beam injector（4–8 MW, 10–100 s） were built and operated in 2014. Neutralization efficiency is one of the important parameters for neutral beam. High neutralization efficiency can not only improve injection power at the same beam energy, but also decrease the power deposited on the heat-load components in the neutral beam injector（NBI）. This research explores the power deposition distribution at different neutralization efficiencies on the beamline components of the NBI device. This work has great significance for guiding the operation of EAST-NBI, especially in long pulse and high power operation, which can reduce the risk of thermal damage of the beamline components and extend the working life of the NBI device.

High performance of hot-carrier generation,transport and injection in TiN/TiO_(2)junction

Improving the performance of generation,transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications.However,the conversion efficiency of hot carriers in the commonly used noble metals(e.g.,Au)is extremely low.Herein,through a systematic study by first-principles calculation and Monte Carlo simulation,we show that TiN might be a promising plasmonic material for high-efficiency hot-carrier applications.Compared with Au,TiN shows obvious advantages in the generation(high density of low-energy hot electrons)and transport(long lifetime and mean free path)of hot carriers.We further performed a device-oriented study,which reveals that high hotcarrier injection efficiency can be achieved in core/shell cylindrical TiN/TiO_(2)junctions.Our findings provide a deep insight into the intrinsic processes of hot-carrier generation,transport and injection,which is helpful for the development of hot-carrier devices and applications.