High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Low-noise and low-power pixel sensor chip for gas pixel detectors

Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.

In-flight Energy Calibration of the GECAM Gamma-ray Detectors

The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor(GECAM)mission is designed to monitor the Gamma-Ray Bursts(GRBs)associated with gravitational waves and other high-energy transient sources.The mission consists of two microsatellites which are planned to operate at the opposite sides of the Earth.Each GECAM satellite could detect and localize GRBs in about 8 keV-5 MeV with its 25 Gamma-Ray Detectors(GRDs).In this work,we report the in-flight energy calibration of GRDs using the characteristic gamma-ray lines in the background spectra,and show their performance evolution during the commissioning phase.Besides,a preliminary cross-calibration of energy response with Fermi GBM data is also presented,validating the energy response of GRDs.

Flexibility potential of Cs_(2)BX_(6)(B=Hf,Sn,Pt,Zr,Ti;X=I,Br,Cl)with application in photovoltaic devices and radiation detectors

As interest in double perovskites is growing,especially in applications like photovoltaic devices,understanding their mechanical properties is vital for device durability.Despite extensive exploration of structure and optical properties,research on mechanical aspects is limited.This article builds a vacancyordered double perovskite model,employing first-principles calculations to analyze mechanical,bonding,electronic,and optical properties.Results show Cs_(2)Hfl_(6),Cs_(2)SnBr_(6),Cs_(2)SnI_(6),and Cs_(2)PtBr_(6)have Young's moduli below 13 GPa,indicating flexibility.Geometric parameters explain flexibility variations with the changes of B and X site composition.Bonding characteristic exploration reveals the influence of B and X site electronegativity on mechanical strength.Cs_(2)SnBr_(6)and Cs_(2)PtBr_(6)are suitable for solar cells,while Cs_(2)HfI_(6)and Cs_(2)TiCl_(6)show potential for semi-transparent solar cells.Optical property calculations highlight the high light absorption coefficients of up to 3.5×10^(5) cm^(-1)for Cs_(2)HfI_(6)and Cs_(2)TiCl_(6).Solar cell simulation shows Cs_(2)PtBr_(6)achieves 22.4%of conversion effciency.Cs_(2)ZrCl_(6)holds promise for ionizing radiation detection with its 3.68 eV bandgap and high absorption coefficient.Vacancy-ordered double perovskites offer superior flexibility,providing valuable insights for designing stable and flexible devices.This understanding enhances the development of functional devices based on these perovskites,especially for applications requiring high stability and flexibility.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

FPGA implementation of 500-MHz high-count-rate high-time-resolution real-time digital neutron-gamma discrimination for fast liquid detectors

Fast neutron flux measurements with high count rates and high time resolution have important applications in equipment such as tokamaks.In this study,real-time neutron and gamma discrimination was implemented on a self-developed 500-Msps,12-bit digitizer,and the neutron and gamma spectra were calculated directly on an FPGA.A fast neutron flux measurement system with BC-501A and EJ-309 liquid scintillator detectors was developed and a fast neutron measurement experiment was successfully performed on the HL-2 M tokamak at the Southwestern Institute of Physics,China.The experimental results demonstrated that the system obtained the neutron and gamma spectra with a time accuracy of 1 ms.At count rates of up to 1 Mcps,the figure of merit was greater than 1.05 for energies between 50 keV and 2.8 MeV.

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.

Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors

In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.

Countermeasure against blinding attack for single-photon detectors in quantum key distribution

Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting single-photon detectors.Here,we propose a concise,robust defense strategy for protecting single-photon detectors in QKD systems against blinding attacks.Our strategy uses a dual approach:detecting the bias current of the avalanche photodiode(APD)to defend against con-tinuous-wave blinding attacks,and monitoring the avalanche amplitude to protect against pulsed blinding attacks.By integrat-ing these two branches,the proposed solution effectively identifies and mitigates a wide range of bright light injection attempts,significantly enhancing the resilience of QKD systems against various bright-light blinding attacks.This method forti-fies the safeguards of quantum communications and offers a crucial contribution to the field of quantum information security.

Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors

Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.

Surgical Management of Lumbar Spinal Canal Stenosis with Instrumentation at the Yaounde Central Hospital: Comparison of Unilateral versus Bilateral Pedicle Screw Fixation Combined with Transforaminal Lumbar Interbody Fusion

Introduction: The choice of adopting unilateral pedicle screw fixation or using bilateral pedicle screw fixation in lumbar spinal stenosis remains controversial. In our context, very few studies have been performed comparing the clinical effectiveness of unilateral versus bilateral fixation in the surgical management of lumbar spinal canal stenosis. Objective: Evaluate the impact on quality of life and clinical efficacy of unilateral spondylodesis compared to bilateral spondylodesis in the surgical management of lumbar spinal canal stenosis at the Yaounde Central Hospital. Methods: This was a retrospective descriptive cross-sectional study for a period of 4 years, from June 2015 to June 2019. It involved all patients operated for lumbar canal stenosis and who underwent spondylodesis or spinal fusion at the neurosurgery department of the Yaounde Central Hospital. Results: A total of 68 participants were recruited during our study period. 32 (47%) of the study population were in the 50 - 60 age group, with a mean age of 56.98 years ranging from 41 to 75 years. Females, housewives and farmers were the most affected. In our study, 72% of patients had unilateral spondylodesis and 28% had bilateral fusion. Preoperatively, 71% of patients had insurmountable pain, refractory to medical treatment. At 3 months postoperatively, 73.7% of patients with bilateral setup had moderate pain compared to 69% of those with unilateral setup. At 6 months postoperatively, 79% of patients with bilateral fusion had mild pain compared to 82% of patients with unilateral setup. At 1 year postoperatively, all patients had mild pain. Preoperatively, 66.2% of patients were unable to walk and 19.1% of patients were bedridden according to the Oswestry score. At 3 months postoperatively, 10.2% of patients with unilateral setup were unable to walk compared to 10.5% of patients with bilateral fixation, while 67.3% of patients with unilateral fixation had moderate disability compared to 52.6% of patients with bilateral fixation. At 6 months postoperatively, 51% of patients with unilateral setup had moderate disability compared to 47.4% of patients with bilateral fixation, while 42.9% of patients with unilateral fixation had mild disability compared to 42.1% of patients with bilateral fixation. At 1 year postoperatively, 81.6% of patients who underwent unilateral fixation had only mild disability compared to 73.7% of patients with bilateral fixation. Conclusion: The assessment of quality of life according to the set-up used shows similar results at 3 months, 6 months and 1 year, with no statistically significant differences. Single-sided pedicle screw fixation combined with transforaminal lumbar interbody fusion or mounting has the advantage of being faster, with less bleeding and is less expensive compared to bilateral fixation.

基于InVEST&GEO-detectors模型的会仙湿地生境质量变化及影响因素研究

喀斯特湿地是广泛分布在喀斯特地区的一种特殊的湿地类型,其生态地位举足轻重,探索喀斯特湿地生境质量变化的影响因素对喀斯特地区生态建设具有重要的意义。本文基于会仙湿地保护区2000和2020年的土地利用数据,通过InVEST模型评估会仙湿地保护区的生境质量,利用地理探测器探测影响会仙湿地保护区生境质量变化的自然和人为因素。研究结果表明:1)研究区2000至2020年建设用地明显扩张,草地和水体显著减少;2)会仙湿地保护区生境质量总体呈现下降的趋势,生境退化度有所上升,生境质量较差的区域主要集中在研究区的北部、中部和东北部;3)地理探测器识别出会仙湿地保护区生境质量空间变化受自然和人为因子的综合作用,主导影响因子是GDP(q为0.135),其次为夜间灯光指数(DMSP)(q为0.053);交互作用探测结果表明,各因子对生境质量影响呈现出双因子增强效果。研究结果有助于揭示会仙湿地保护区生境质量的时空演变过程,可针对会仙湿地生态建设的问题提出可行的应对策略。

Development of small pixel HgCdTe infrared detectors

After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.

Past,present and future of the Resonant-Mass gravitational wave detectors

Resonant-mass gravitational wave detectors are reviewed from the concept of gravitational waves and its mathematical derivation, using Einstein＇s general relativity, to the present status of bars and spherical detectors, and their prospects for the future, which include dual detectors and spheres with non-resonant transducers. The review not only covers technical aspects of detectors and sciences that will be done, but also analyzes the subject in a historical perspective, covering the various detection efforts over four decades, starting from Weber＇s pioneering work.

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.

Simulation of GaN micro-structured neutron detectors for improving electrical properties

Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.

Calibration and Unfolding of the Pulse Height Spectra of Liquid Scintillator-Based Neutron Detectors Using Photon Sources

An accurate energy calibration of a 5＂× 2＂ BC501A liquid scintillator-based neutron detector by means of photon sources and the unfolding of pulse height spectra are described. The photon responses were measured with 22Na, 137Cs and 54Mn photon sources and simulated using the GRESP code, which was developed at the Physiknlisch Technische Bundesanstalt in Germany. Pulse height spectra produced by three different photon sources were employed to investigate the effects of the unfolding techniques. It was found that the four unfolding codes of the HEPRO and UMG3.3 packages, including GRAVEL, UNFANA, MIEKE and MAXED, performed well with the test spectra and produced generally consistent results. They could therefore be used to obtain neutron energy spectra in toknmak experiments.

Ohmic Contacts to n-Type Al_(0.6)Ga_(0.4)N for Solar-Blind Detectors

We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors＇ performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized.

Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition

Chemical vapor deposition(CVD)-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond(SCD) detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence(CL), and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency(CCE). This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.

Computerised tomography vs magnetic resonance imaging for modeling of patient-specific instrumentation in total knee arthroplasty

AIM: To summarise and compare currently available evidence regarding accuracy of pre-operative imaging, which is one of the key choices for surgeons contemplating patient-specific instrumentation(PSI) surgery.METHODS: The MEDLINE and EMBASE medical literature databases were searched, from January 1990 to December 2013, to identify relevant studies. The data from several clinical studies was assimilated to allow appreciation and comparison of the accuracy of each modality. The overall accuracy of each modality was calculated as proportion of outliers > 3% in the coronal plane of both computerised tomography(CT) or magnetic resonance imaging(MRI). RESULTS: Seven clinical studies matched our inclusion criteria for comparison and were included in our study for statistical analysis. Three of these reported series using MRI and four with CT. Overall percentage of outliers > 3% in patients with CT-based PSI systems was 12.5% vs 16.9% for MRI-based systems. These results were not statistically significant. CONCLUSION: Although many studies have been undertaken to determine the ideal pre-operative imaging modality, conclusions remain speculative in the absence of long term data. Ultimately, information regarding accuracy of CT and MRI will be the main determining factor. Increased accuracy of pre-operative imaging could result in longer-term savings, and reduced accumulated dose of radiation by eliminating the need for post-operative imaging and revision surgery.