Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize...Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimental results show that the chemical state of tantalum is pure Taand the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound, NiTa. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.展开更多
Tantalum as an insulating barrier can take the place of Al in magnetic tunneljunctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectronspectroscopy (XPS) was used to characterize t...Tantalum as an insulating barrier can take the place of Al in magnetic tunneljunctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectronspectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimentalresults show that the chemical state of tantalum is pure Ta^(5+) and the thickness of the oxide is1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usuallyused in MTJs to form an intermetallic compound, NiTa_2. A magnetic 'dead layer' could be produced inthe NiFe/Ta interface. The 'dead layer' is likely to influence the spinning electron transport andthe magnetoresistance effect.展开更多
To increase the performance and efficiency of thermal barrier coating （TBC）, it is important to improve the thermal insulation property. In this work, a columnar AI film was deposited at the top of 7 wt% yttria- sta...To increase the performance and efficiency of thermal barrier coating （TBC）, it is important to improve the thermal insulation property. In this work, a columnar AI film was deposited at the top of 7 wt% yttria- stabilized zirconia （7YSZ） TBC by magnetron sputtering. A vacuum heat treatment was then carried out to improve the insulation property of Al-deposited TBC. Reaction mechanism of AI-ZrO2 system in AIdeposited TBC was studied by differential thermal analysis （DTA）. The phase structures of the assprayed TBC, the Al-deposited and vacuum-treated TBC were characterized. The microstructure evolution of M-deposited TBC was illustrated after vacuum heat treatment. And the insulation property of the assprayed TBC and treated TBC was compared. The results show that a multi-scaled layer, consisting of micron/ nano structured α-Al2O3 and AI3Zr grain was in situ synthesized at the top of 7YSZ coating via vacuum heat treatment. The TBC with the multi-scaled overlay has better insulation property than the asspraved TBC.展开更多
文摘Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimental results show that the chemical state of tantalum is pure Taand the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound, NiTa. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.
基金This work was financially supported by the National Natural Science Foundation of China and the Research Foundation for the Doctoral Program of Higher Education of China under Grant No.50271007 and 20030008003, respectively
文摘Tantalum as an insulating barrier can take the place of Al in magnetic tunneljunctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectronspectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimentalresults show that the chemical state of tantalum is pure Ta^(5+) and the thickness of the oxide is1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usuallyused in MTJs to form an intermetallic compound, NiTa_2. A magnetic 'dead layer' could be produced inthe NiFe/Ta interface. The 'dead layer' is likely to influence the spinning electron transport andthe magnetoresistance effect.
基金supported by the National Basic Research Program of China ("973" program, No. 2012CB625100)the National Hightech Research and Development Program of China ("863" program, No. 2012AA03A512)
文摘To increase the performance and efficiency of thermal barrier coating （TBC）, it is important to improve the thermal insulation property. In this work, a columnar AI film was deposited at the top of 7 wt% yttria- stabilized zirconia （7YSZ） TBC by magnetron sputtering. A vacuum heat treatment was then carried out to improve the insulation property of Al-deposited TBC. Reaction mechanism of AI-ZrO2 system in AIdeposited TBC was studied by differential thermal analysis （DTA）. The phase structures of the assprayed TBC, the Al-deposited and vacuum-treated TBC were characterized. The microstructure evolution of M-deposited TBC was illustrated after vacuum heat treatment. And the insulation property of the assprayed TBC and treated TBC was compared. The results show that a multi-scaled layer, consisting of micron/ nano structured α-Al2O3 and AI3Zr grain was in situ synthesized at the top of 7YSZ coating via vacuum heat treatment. The TBC with the multi-scaled overlay has better insulation property than the asspraved TBC.
