Ultrafast dynamics in photo-excited Mott insulator Sr_(3)Ir_(2)O_7 at high pressure

High-pressure ultrafast dynamics,as a new crossed research direction,are sensitive to subtle non-equilibrium state changes that might be unresolved by equilibrium states measurements,providing crucial information for studying delicate phase transitions caused by complex interactions in Mott insulators.With time-resolved transient reflectivity measurements,we identified the new phases in the spin–orbit Mott insulator Sr_(3)Ir_(2)O_7 at 300 K that was previously unidentified using conventional approaches such as x-ray diffraction.Significant pressure-dependent variation of the amplitude and lifetime obtained by fitting the reflectivity?R/R reveal the changes of electronic structure caused by lattice distortions,and reflect the critical phenomena of phase transitions.Our findings demonstrate the importance of ultrafast nonequilibrium dynamics under extreme conditions for understanding the phase transition of Mott insulators.

Optical study of magnetic topological insulator MnBi_(4)Te_7

We present an infrared spectroscopy study of the magnetic topological insulator MnBi_(4)Te_7 with antiferromagnetic(AFM) order below the Neel temperature TN= 13 K. Our investigation reveals that the low-frequency optical conductivity consists of two Drude peaks, indicating a response of free carriers involving multiple bands. Interestingly, the narrow Drude peak grows strongly as the temperature decreases, while the broad Drude peak remains relatively unchanged. The onset of interband transitions starts around 2000 cm^(-1), followed by two prominent absorption peaks around 10000 cm^(-1) and 20000 cm^(-1). Upon cooling, there is a notable transfer of spectral weight from the interband transitions to the Drude response. Below TN, the AFM transition gives rise to small anomalies of the charge response due to a band reconstruction.These findings provide valuable insights into the interplay between magnetism and the electronic properties in MnBi_(4)Te_7.

Quantitative determination of the critical points of Mott metal–insulator transition in strongly correlated systems

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal–insulator transition. The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition. Additionally, it presents a consistent description of the two distinct forms of the Mott transition points.

A Simple and Effective Surface Defect Detection Method of Power Line Insulators for Difficult Small Objects

Insulator defect detection plays a vital role in maintaining the secure operation of power systems.To address the issues of the difficulty of detecting small objects and missing objects due to the small scale,variable scale,and fuzzy edge morphology of insulator defects,we construct an insulator dataset with 1600 samples containing flashovers and breakages.Then a simple and effective surface defect detection method of power line insulators for difficult small objects is proposed.Firstly,a high-resolution featuremap is introduced and a small object prediction layer is added so that the model can detect tiny objects.Secondly,a simplified adaptive spatial feature fusion(SASFF)module is introduced to perform cross-scale spatial fusion to improve adaptability to variable multi-scale features.Finally,we propose an enhanced deformable attention mechanism(EDAM)module.By integrating a gating activation function,the model is further inspired to learn a small number of critical sampling points near reference points.And the module can improve the perception of object morphology.The experimental results indicate that concerning the dataset of flashover and breakage defects,this method improves the performance of YOLOv5,YOLOv7,and YOLOv8.In practical application,it can simply and effectively improve the precision of power line insulator defect detection and reduce missing detection for difficult small objects.

Higher-order topological Anderson insulator on the Sierpiński lattice

Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.

Pressure induced insulator to metal transition in quantum spin liquid candidate NaYbS_(2)

Pressure induced insulator to metal transition followed by the appearance of superconductivity has been observed recently in inorganic quantum spin liquid candidate NaYbSe_(2).In this paper,we study the properties of isostructural compound NaYbS_(2)under pressure.It is found that the resistance of Na YbS_(2)single crystal exhibits an insulating state below 82.9 GPa,but with a drop of more than six orders of magnitude at room temperature.Then a minimum of resistance is observed at about 100.1 GPa and it moves to lower temperature with further compression.Finally,a metallic state in the whole temperature range is observed at about 130.3 GPa accompanied by a non-Fermi liquid behavior below 100 K.The insulator to metal transition,non-monotonic resistance feature and non-Fermi liquid behavior of NaYbS_(2)under pressure are similar to those of NaYbSe_(2),suggesting that these phenomena might be the universal properties in NaLnCh_(2)(Ln=rare earth,Ch=O,S,Se)system.

Thermal Hall effect and the Wiedemann–Franz law in Chern insulator

Thermal Hall effect, where a transverse temperature difference is generated by implementing a longitudinal temperature gradient and an external magnetic field in the perpendicular direction to systems, is a useful tool to reveal transport properties of quantum materials. A systematic study of the thermal Hall effect in a Chern insulator is still lacking. Here,using the Landauer–Büttiker formula, we investigated the thermal Hall transport of the Harper–Hofstadter model with flux φ= 1/2 and its generalizations. We demonstrated that the Wiedemann–Franz law, which states that the thermal Hall conductivity is linearly proportional to the quantum Hall conductivity in the low temperature limit, is still valid in this Chern insulator, and that the thermal Hall conductivity can be used to characterize the topological properties of quantum materials.

Numerical Simulation of Contamination Accumulation Characteristics of Composite Insulators in Salt Fog Environment

To investigate the fouling characteristics of the composite insulator surface under the salt fog environment,the FXBW-110/120-2 composite insulator was taken as the research object.Based on the field-induced charge mechanism,the multi-physical field coupling software COMSOL was used to numerically simulate the fouling characteristics,explored the calculation method of ESDD,and demonstrated its rationality.Based on this method,the pollution characteristics of the composite insulator under the pollution fog environment were studied,and the influence of wind speed,droplet size,and voltage type on the pollution characteristics of the composite insulator was analyzed.The results showed that:with the increase in wind speed,the amount of accumulated pollution of insulator increases in the range of droplet size,and the relationship between wind speed and accumulated pollution is approximately linear;at the same wind speed,the amount of accumulated pollution increases with the increase of droplet size under the action of DC voltage;when there is no voltage,the amount of dirt on the upper surface of the insulator is more than that on the lower surface,while it is the opposite under DC voltage.

Magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulators

Control and detection of antiferromagnetic topological materials are challenging since the total magnetization vanishes.Here we investigate the magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulator Mn Bi2Te4.We find that by breaking the combined mirror symmetries with either perpendicular electric field or external magnetic moment,Kerr and Faraday effects occur.Under perpendicular electric field,antiferromagnetic topological insulators(AFMTI)show sharp peaks at the interband transition threshold,whereas trivial insulators show small adjacent positive and negative peaks.Gate voltage and Fermi energy can be tuned to reveal the differences between AFMTI and trivial insulators.We find that AFMTI with large antiferromagnetic order can be proposed as a pure magneto-optical rotator due to sizable Kerr(Faraday)angles and vanishing ellipticity.Under external magnetic moment,AFMTI and trivial insulators are significantly different in the magnitude of Kerr and Faraday angles and ellipticity.For the qualitative behaviors,AFMTI shows distinct features of Kerr and Faraday angles when the spin configurations of the system change.These phenomena provide new possibilities to optically detect and manipulate the layered topological antiferromagnets.

Measurement of alumina film induced ablation of internal insulator in solid rocket environment

This study investigates the ablation of internal insulation induced by the deposition of an alumina film with different lateral film speeds.A sub-scale test solid rocket motor(SRM)was designed in an impinging jet configuration to form an alumina film on the sample and to encourage the lateral movement of the film by a high-speed wall jet.Fifteen static fire tests of the test SRM were conducted with six different jet velocities(V_(jet)=100 m/s,150 m/s,200 m/s,268 m/s,330 m/s,and 450 m/s)that indirectly affected the velocity of the wall jet and the deposition rate of alumina droplets.The ablation velocity was deduced from the difference in the sample thickness after a test using a coordinate measuring machine.The droplet deposition mass flux and wall jet velocity were obtained via two-phase flow simulation with the same jet velocity and effective pressure.As a result,the characteristics of alumina-induced ablation and the changes in ablation with jet velocities were obtained.The area within0.8×jet diameter was focused upon,where the ratio of ablation velocity to incoming alumina mass was constant for each jet velocity,and showed a similarity in jet structure.When the ablation velocity was increased from 2.05 to 9.98 mm/s with increasing jet velocity,the ratio of the ablation velocity and alumina mass flux decreased from 1.07×10^(-4)to 0.49×10^(-4)m^(3)/kg as Al_(2)O_(3)-C reactions became less efficient with a reduced residence time of the film.Because the decrease in residence time by the wall jet is more pronounced for slow reactions involved in Al_(2)O_(3)-C reactions,fast reactions in Al_(2)O_(3)-C reactions are less affected and result in a convergence of the volumetric rate of ablation per unit mass of alumina.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect(QHE),as a class of quantum phenomena that occur in macroscopic scale,is one of the most important topics in condensed matter physics.It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application.Such a QHE free of Landau levels,can appear in topological insulators(TIs) with ferromagnetism as the quantized version of the anomalous Hall effect,i.e.,quantum anomalous Hall(QAH) effect.Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs.With molecular beam epitaxy,we prepare thin films of Cr-doped(Bi,Sb)2Te3 TIs with wellcontrolled chemical potential and long-range ferromagnetic order that can survive the insulating phase.In such thin films,we eventually observed the quantization of the Hall resistance at h/e2 at zero field,accompanied by a considerable drop in the longitudinal resistance.Under a strong magnetic field,the longitudinal resistance vanishes,whereas the Hall resistance remains at the quantized value.The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs,and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Electron localization in ultrathin films of three-dimensional topological insulators

The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature.

Design of insulator gray measurement system based on BH1750FVI

Ash dense(non-soluble sediment density,NSDD) is attached to the insulator surface material that can't dissolve in water,it is divided by the result of surface area and used for quantitative content of insulator surface non-soluble residues. Based on high voltage measurement,surface of outer insulation of ash can be used for the product line insulator pollution situation and determine whether it is able to withstand a variety of adverse factors. This paper proposes a method based on BH1750 FVI light intensity sensor for ash dense measurement.

Experimental Investigation on Ablation Characteristic of EPDM Insulator in Different Gas Environments

Some ablation experiments of Ethylene-Propylene-Diene Monomer(EPDM)insulator were carried out in quasi-static low temperature gas environment,gas-phase environment,two-phase environment with Al2O3 grain and high concentration Al2O3 grain gas environments.Their charring ablation rate,thickness,surface morphology and main ingredient of the charring layer were analyzed.The experiment results show that the main influent factors for the charring ablation rate are the gas temperature,grain concentration and state of grain impact;the main influent factors for the charring layer thickness are the gas velocity and environment pressure;and the process of SiO2 migrating in the charring layer occur commonly in different gas environments.They provide a foundation for the ablation mechanism research and modeling of EPDM insulator.

Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors

The effects of source-drain underlaps on the performance of a top gate silicon nanowire on insulator transistor are studied using a three dimensional(3D) self-consistent Poisson-Schrodinger quantum simulation. Voltage-controlled tunnel barrier is the device transport physics. The off current, the on/off current ratio, and the inverse subthreshold slope are improved while the on current is degraded with underlap. The physics behind this behavior is the modulation of a tunnel barrier with underlap. The underlap primarily affects the tunneling component of drain current. About 50% contribution to the gate capacitance comes from the fringing electric fields emanating from the gate metal to the source and drain. The gate capacitance reduces with underlap, which should reduce the intrinsic switching delay and increase the intrinsic cut-off frequency. However, both the on current and the transconductance reduce with underlap, and the consequence is the increase of delay and the reduction of cut-off frequency.

Influence of spacer insulator material temperature characteristics on its electric properties

Spacer insulators are important insulating component of gas insulated switchgear(GIS). In order to analyze the influence of spacer insulator materials temperature characteristics on the electric performance, we tested the temperature distribution under work condition and the temperature characteristics of the material's relative permittivity. Then established a spacer insulator simulation model in finite element numerical simulation software to calculate its temperature and electric field. Using the temperature test results as a reference to verify the temperature calculation, and in order to analyze changes of the electric field along the surface of the spacer insulator, the temperature characteristics of relative permittivity have to be considered. Through the experimental research and simulation analysis, we found that the temperature characteristics of the spacer insulator materials have great impacts on the spacer insulator performance. When the temperature increases, the material relative permittivity also increases. In the low-temperature region of spacer insulator, the electric field intensity along the surface increases, so the electrical performance deteriorates. The conclusion of this paper can provide an important reference for further research about spacer insulator's working performance analysis.

Hydrogenated antimonene as quantum spin Hall insulator:A first-principles study

Using first-principles calculations based on density functional theory(DFT), the structural and electronic properties of hydrogenated antimonene have been systematically investigated. Phonon dispersion and molecular dynamics(MD)simulation reveal that fully hydrogenated(FH) antimonene has high dynamic stability and could be synthesized. A newσ-type Dirac cone related to Sb-px,y orbitals is found in FH antimonene, which is robust to tensile strain. Noticeably, the spin orbital coupling(SOC) opens a quantum spin Hall(QSH) gap of 425 meV at the Dirac cone, sufficiently large for practical applications at room temperature. Semi-hydrogenated antimonene is a non-magnetic metal. Our results show that FH antimonene may have great potential applications in next generation high-performance devices.

Surface Structure of Aged Composite Insulator Studied by Slow Positron Beam

Slow positron beam was applied to study the depth profile structure of the virgin and the aged high-temperature vulcanized silicone rubber(HTV). Scanning electron microscope(SEM) images show that the surface of virgin sample is smooth, while the outdoor aged samples are all rough. According to the S(E) curves obtained by slow positron beam, in a depth of more than 1 μm, the S parameter of the sample aged at low-potential side keeps the same value with the virgin one;while the S values of the highpotential side aged sample remain rather low in a depth of about 5 μm. Thermo gravimetric analysis(TGA) results show that the sample in high potential side contains more inorganic constituents than that of other samples. The results are attributed to the strong electric field induced corona aging at high potential side of the composite insulator.

Tunable Weyl fermions and Fermi arcs in magnetized topological crystalline insulators

Based on k · p analysis and realistic tight-binding calculations, we find that time-reversal-breaking Weyl semimetals can be realized in magnetically-doped(Mn, Eu, Cr, etc.) Sn_(1-x)Pb_x(Te, Se) class of topological crystalline insulators. All the Weyl points are well separated in momentum space and possess nearly the same energy due to high crystalline symmetry.Moreover, both the Weyl points and Fermi arcs are highly tunable by varying Pb/Sn composition, pressure, magnetization,temperature, surface potential, etc., opening up the possibility of manipulating Weyl points and rewiring the Fermi arcs.

Weak antilocalization and interaction-induced localization of Dirac and Weyl Fermions in topological insulators and semimetals

Weak localization and antilocalization are quantum transport phenomena that arise from the quantum interference in disordered metals.At low temperatures,they can give distinct temperature and magnetic field dependences in conductivity,allowing the symmetry of the system to be explored.In the past few years,they have also been observed in newly emergent topological materials,including topological insulators and topological semimetals.In contrast from the conventional electrons,in these new materials the quasiparticles are described as Dirac or Weyl fermions.In this article,we review our recent efforts on the theories of weak antilocalization and interaction-induced localization for Dirac and Weyl fermions in topological insulators and topological semimetals.