Non-mechanical beam scanner based on VCSEL integrated amplifier with resonant wavelength detuning design

We demonstrate the non-mechanical beam steering and amplifier operation of a vertical cavity surface emitting laser(VCSEL)integrated Bragg reflector waveguide amplifier with a cut-off wavelength detuning design,which enables unidirectional lateral coupling,continuous electrical beam steering,and diffraction-limited divergence angle.We present the modeling of the proposed structure for unidirectional coupling between a seed single-mode VCSEL and slow-light amplifier.We also present the detailed operating characteristics including the near-field and far-field patterns,light/current characteristics,and lasing spectrum.The experimental measurements exhibit a single-mode output of over 8 mW under CW operation,a continuous beam steering range of 16°,and beam divergence below 0.1°as an optical beam scanner.The integrated amplifier length is as small as 0.9 mm,and thus we could expect much higher powers and higher resolution points by increasing the amplifier lengths.

Human blood plasma-based electronic integrated circuit amplifier configuration

Dear Editor： There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit （IC） configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology.

Magnification Ratio of Mechanical Displacement Amplifier in Sensing Device

In order to monitor deformation of high temperature components for a long time,a sensing device integrating a bridge-shaped mechanical displacement amplifier has been designed.This sensing device has higher resolution and accuracy than conventional extensometers.However,the relation between the magnification ratio and the structure size of the displacement amplifier is a bottleneck of sensing device design.Addressing this,the magnification ratio of a mechanical displacement amplifier is analytically derived based on its geometry structure.Six prototypes of the displacement amplifier made in propathene are manufactured,and an experimental system is set up to validate the accuracy of the established magnification ratio equation.Theoretical magnification ratios and experimental magnification ratios are compared and agree well,which verifies that the proposed equation is reliable.This analytical equation provides an effective design method for bridge-shaped mechanical displacement amplifiers with an expected magnification ratio.

A microstrip filter direct-coupled amplifier based on active

This paper presents a methodology of designing an amplifier integrated with a microstrip filter using an active coupling matrix.The microstrip filter is directly coupled to the active device,and the integrated filter amplifier can achieve filtering as well as matching functionalities,simultaneously,eliminating the need for separate matching networks.The filter amplifier is repre-sented by an active coupling matrix,with additional columns and rows in the matrix corresponding to the active transistor.The matrix can be used to calculate the S-parameter responses(i.e.,the return loss and the gain)and the initial dimensions of the integrated device.Moreover,the integration of a filter and an amplifier leads to a reduced loss and a more compact architecture of the devices.An X-band microstrip filter amplifier has been designed and demonstrated as an example.Microstrip technology has been chosen because of its appealing advantages of easy fabrication,low cost,and most importantly,easy integration with active devices.

A 3.8 GHz programmable gain amplifier with a 0.1 dB gain step

A broadband programmable gain amplifier（PGA） with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A two-stage gain control method, which consists of a resistor ladder attenuator and an active fine gain control stage, provides the small gain step. A look-up table based gain control method is introduced in the fine gain control stage to lower the gain error.The proposedPGAshows a decibel-linear variable gainfrom4 to20 dB with a gain step of 0.1 dB and a gain error less than˙0.05 dB. The 3-dB bandwidth and maximum IIP3 are 3.8 GHz and 17 dBm, respectively.

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.