Synchronization errors directly deteriorate the machining accuracy of metal parts and the existed method cannot keep high synchronization precision because of external disturbances. A new double position servo synchro...Synchronization errors directly deteriorate the machining accuracy of metal parts and the existed method cannot keep high synchronization precision because of external disturbances. A new double position servo synchronous driving scheme based on semi-closed-loop cross- coupling integrated feedforward control is proposed. The scheme comprises a position error cross-coupling feedfor-ward control and a load torque identification with feed- forward control. A digital integrated simulation system for the dual servo synchronous drive system is established. Using a 20 t servo broacher, performance analysis of the scheme is conducted based on this simulation system and the simulation results show that systems with traditional parallel or single control have problems when the work- table works with an unbalanced load. However, the system with proposed scheme shows good synchronous perfor- mance and positional accuracy. Broaching tests are performed and the experimental results show that the maximum dual axis synchronization error of the system is only 8μm during acceleration and deceleration processes and the error between the actual running position and the given position is almost zero. A double position servo synchronous driving scheme is presented based on crosscoupled integrated feedforward compensation control, which can improve the synchronization precision.展开更多
Based on the mechanisms of gravity displacement,miscibility,viscosity reduction,and imbibition in natural gas flooding,an integrated reservoir construction technology of oil displacement and underground gas storage(UG...Based on the mechanisms of gravity displacement,miscibility,viscosity reduction,and imbibition in natural gas flooding,an integrated reservoir construction technology of oil displacement and underground gas storage(UGS)is proposed.This paper systemically describes the technical connotation,site selection principle and optimization process of operation parameters of the gas storage,and advantages of this technology.By making full use of the gravity displacement,miscibility,viscosity reduction,and imbibition features of natural gas flooding,the natural gas can be injected into oil reservoir to enhance oil recovery and build strategic gas storage at the same time,realizing the win-win situation of oil production and natural gas peak shaving.Compared with the gas reservoir storage,the integrated construction technology of gas storage has two profit models:increasing crude oil production and gas storage transfer fee,so it has better economic benefit.At the same time,in this kind of gas storage,gas is injected at high pressure in the initial stage of its construction,gas is injected and produced in small volume in the initial operation stage,and then in large volume in the middle and late operation stage.In this way,the gas storage wouldn’t have drastic changes in stress periodically,overcoming the shortcomings of large stress variations of gas reservoir storage during injection-production cycle due to large gas injection and production volume.The keys of this technology are site selection and evaluation of oil reservoir,and optimization of gravity displacement,displacement pressure,and gas storage operation parameters,etc.The pilot test shows that the technology has achieved initial success,which is a new idea for the rapid development of UGS construction in China.展开更多
Based on electromagnetics and mechanics, electromechanical coupled dynamic equations for the drive were developed. Using method of perturbation, free vibrations of the mechanical system under electric disturbance were...Based on electromagnetics and mechanics, electromechanical coupled dynamic equations for the drive were developed. Using method of perturbation, free vibrations of the mechanical system under electric disturbance were investigated. The forced responses of the mechanical system to mechanical excitation under electric disturbance were also presented. It is known that for the system with electric disturbance, as time grows, beat occurs. When electric disturbing frequency is near to the natural frequencies of the mechanical system or their integer multiple, resonance vibrations occur. The forced responses of the mechanical system to mechanical excitation under electric disturbance are compound vibrations decided by mechanical excitation, electric disturbance and parameters of the system. The coupled resonance vibration caused by electric disturbance and mechanical excitation was discussed as well. The conditions under which above coupled resonance occurs were presented. The results show that when the difference of the excitation frequency and the perturbation frequency is equal to some order of natural frequency, coupled resonance vibrations occur.展开更多
Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap an...Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fab- ricated Si0.73Ge0.27 pMOSFETs with gate length of 3Onto exhibit good performance with high drive current (~428μA/μm at VDD = 1 V) and suppressed short-channel effects (DIBL^77mV/V and SS^90mV/decade). It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.展开更多
A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is exp...A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.展开更多
The development of vehicle integrated photovoltaics-powered electric vehicles (VIPV-EV) significantly reduces CO<sub>2</sub> emissions from the transport sector to realize a decarbonized society. Although ...The development of vehicle integrated photovoltaics-powered electric vehicles (VIPV-EV) significantly reduces CO<sub>2</sub> emissions from the transport sector to realize a decarbonized society. Although long-distance driving of VIPV-EV without electricity charging is expected in sunny regions, driving distance of VIPV-EV is affected by climate conditions such as solar irradiation and temperature rise of PV modules. In this paper, detailed analytical results for effects of climate conditions such as solar irradiation and temperature rise of PV modules upon driving distance of the VIPV-EV were presented by using test data for Toyota Prius and Nissan Van demonstration cars installed with high-efficiency InGaP/GaAs/InGaAs 3-junction solar cell modules with a module efficiency of more than 30%. The temperature rise of some PV modules studied in this study was shown to be expressed by some coefficients related to solar irradiation, wind speed and radiative cooling. The potential of VIPV-EV to be deployed in 10 major cities was also analyzed. Although sunshine cities such as Phoenix show the high reduction ratio of driving range with 17% due to temperature rise of VIPV modules, populous cities such as Tokyo show low reduction ratio of 9%. It was also shown in this paper that the difference between the driving distance of VIPV-EV driving in the morning and the afternoon is due to PV modules’ radiative cooling. In addition, the importance of heat dissipation of PV modules and the development of high-efficiency PV modules with better temperature coefficients was suggested in order to expand driving range of VIPV-EV. The effects of air-conditioner usage and partial shading in addition to the effects of temperature rise of VIPV modules were suggested as the other power losses of VIPV-EV.展开更多
In order to improve the bias stability of the micro-electro mechanical system(MEMS) gyroscope and reduce the impact on the bias from environmental temperature,a digital signal processing method is described for impr...In order to improve the bias stability of the micro-electro mechanical system(MEMS) gyroscope and reduce the impact on the bias from environmental temperature,a digital signal processing method is described for improving the accuracy of the drive phase in the gyroscope drive mode.Through the principle of bias signal generation,it can be concluded that the deviation of the drive phase is the main factor affecting the bias stability.To fulfill the purpose of precise drive phase control,a digital signal processing circuit based on the field-programmable gate array(FPGA) with the phase-lock closed-loop control method is described and a demodulation method for phase error suppression is given.Compared with the analog circuit,the bias drift is largely reduced in the new digital circuit and the bias stability is improved from 60 to 19 °/h.The new digital control method can greatly increase the drive phase accuracy,and thus improve the bias stability.展开更多
The purpose of this work relates to study on the characteristics of ultra thin gate oxide (2 5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments...The purpose of this work relates to study on the characteristics of ultra thin gate oxide (2 5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments are carried out by depositing a few ppm contaminated metal and low pH solutions on the wafers.The maximum metal surface concentration is controlled at about 10 12 cm -2 level in order to simulate metal contamination during ultra clean processing.A ramped current stress for intrinsic charge to breakdown measurements with gate injection mode is used to examine the characteristics of these ultra thin gate oxides and the effect of metal contamination on GOI.It is the first time to investigate the influence of metal Zr and Ta contamination on 2 5nm ultra thin gate oxide.It is demonstrated that there is little effect of Al contamination on GOI,while Zr contamination is the most detrimental to GOI,and early breakdown has happened to wafers contaminated by Ta.展开更多
基金Supported by National Natural Science Foundation of China(Grant No.51307151)Zhejiang Provincial Public Welfare Technology Application Research Project of China(Grant No.2015C31078)+2 种基金Zhejiang Provincial Natural Science Foundation of China(Grant No.LY14E070008)Zhejiang Postdoctoral Science Foundation of China(Grant No.BSH1402065)Science Foundation of Zhejiang SciTech University(Grant No.13022151-Y)
文摘Synchronization errors directly deteriorate the machining accuracy of metal parts and the existed method cannot keep high synchronization precision because of external disturbances. A new double position servo synchronous driving scheme based on semi-closed-loop cross- coupling integrated feedforward control is proposed. The scheme comprises a position error cross-coupling feedfor-ward control and a load torque identification with feed- forward control. A digital integrated simulation system for the dual servo synchronous drive system is established. Using a 20 t servo broacher, performance analysis of the scheme is conducted based on this simulation system and the simulation results show that systems with traditional parallel or single control have problems when the work- table works with an unbalanced load. However, the system with proposed scheme shows good synchronous perfor- mance and positional accuracy. Broaching tests are performed and the experimental results show that the maximum dual axis synchronization error of the system is only 8μm during acceleration and deceleration processes and the error between the actual running position and the given position is almost zero. A double position servo synchronous driving scheme is presented based on crosscoupled integrated feedforward compensation control, which can improve the synchronization precision.
基金Supported by the Petro China Preliminary Research Project(2021-40217-000041)Changqing Oilfield Technology Development Project(RIPED-JS-50016)。
文摘Based on the mechanisms of gravity displacement,miscibility,viscosity reduction,and imbibition in natural gas flooding,an integrated reservoir construction technology of oil displacement and underground gas storage(UGS)is proposed.This paper systemically describes the technical connotation,site selection principle and optimization process of operation parameters of the gas storage,and advantages of this technology.By making full use of the gravity displacement,miscibility,viscosity reduction,and imbibition features of natural gas flooding,the natural gas can be injected into oil reservoir to enhance oil recovery and build strategic gas storage at the same time,realizing the win-win situation of oil production and natural gas peak shaving.Compared with the gas reservoir storage,the integrated construction technology of gas storage has two profit models:increasing crude oil production and gas storage transfer fee,so it has better economic benefit.At the same time,in this kind of gas storage,gas is injected at high pressure in the initial stage of its construction,gas is injected and produced in small volume in the initial operation stage,and then in large volume in the middle and late operation stage.In this way,the gas storage wouldn’t have drastic changes in stress periodically,overcoming the shortcomings of large stress variations of gas reservoir storage during injection-production cycle due to large gas injection and production volume.The keys of this technology are site selection and evaluation of oil reservoir,and optimization of gravity displacement,displacement pressure,and gas storage operation parameters,etc.The pilot test shows that the technology has achieved initial success,which is a new idea for the rapid development of UGS construction in China.
基金Project(51075350)supported by the National Natural Science Foundation of China
文摘Based on electromagnetics and mechanics, electromechanical coupled dynamic equations for the drive were developed. Using method of perturbation, free vibrations of the mechanical system under electric disturbance were investigated. The forced responses of the mechanical system to mechanical excitation under electric disturbance were also presented. It is known that for the system with electric disturbance, as time grows, beat occurs. When electric disturbing frequency is near to the natural frequencies of the mechanical system or their integer multiple, resonance vibrations occur. The forced responses of the mechanical system to mechanical excitation under electric disturbance are compound vibrations decided by mechanical excitation, electric disturbance and parameters of the system. The coupled resonance vibration caused by electric disturbance and mechanical excitation was discussed as well. The conditions under which above coupled resonance occurs were presented. The results show that when the difference of the excitation frequency and the perturbation frequency is equal to some order of natural frequency, coupled resonance vibrations occur.
基金Supported by the National Basic Research Program of China under Grant No 2011CBA00605the National Natural Science Foundation of China under Grant No 61404165
文摘Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fab- ricated Si0.73Ge0.27 pMOSFETs with gate length of 3Onto exhibit good performance with high drive current (~428μA/μm at VDD = 1 V) and suppressed short-channel effects (DIBL^77mV/V and SS^90mV/decade). It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.
基金This work was supported by the National Nature Science Foundation of China under Grant No.60436030.
文摘A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.
文摘The development of vehicle integrated photovoltaics-powered electric vehicles (VIPV-EV) significantly reduces CO<sub>2</sub> emissions from the transport sector to realize a decarbonized society. Although long-distance driving of VIPV-EV without electricity charging is expected in sunny regions, driving distance of VIPV-EV is affected by climate conditions such as solar irradiation and temperature rise of PV modules. In this paper, detailed analytical results for effects of climate conditions such as solar irradiation and temperature rise of PV modules upon driving distance of the VIPV-EV were presented by using test data for Toyota Prius and Nissan Van demonstration cars installed with high-efficiency InGaP/GaAs/InGaAs 3-junction solar cell modules with a module efficiency of more than 30%. The temperature rise of some PV modules studied in this study was shown to be expressed by some coefficients related to solar irradiation, wind speed and radiative cooling. The potential of VIPV-EV to be deployed in 10 major cities was also analyzed. Although sunshine cities such as Phoenix show the high reduction ratio of driving range with 17% due to temperature rise of VIPV modules, populous cities such as Tokyo show low reduction ratio of 9%. It was also shown in this paper that the difference between the driving distance of VIPV-EV driving in the morning and the afternoon is due to PV modules’ radiative cooling. In addition, the importance of heat dissipation of PV modules and the development of high-efficiency PV modules with better temperature coefficients was suggested in order to expand driving range of VIPV-EV. The effects of air-conditioner usage and partial shading in addition to the effects of temperature rise of VIPV modules were suggested as the other power losses of VIPV-EV.
基金The National Natural Science Foundation of China (No.60974116)the Research Fund of Aeronautics Science (No. 20090869007)Specialized Research Fund for the Doctoral Program of Higher Education(No. 200802861063)
文摘In order to improve the bias stability of the micro-electro mechanical system(MEMS) gyroscope and reduce the impact on the bias from environmental temperature,a digital signal processing method is described for improving the accuracy of the drive phase in the gyroscope drive mode.Through the principle of bias signal generation,it can be concluded that the deviation of the drive phase is the main factor affecting the bias stability.To fulfill the purpose of precise drive phase control,a digital signal processing circuit based on the field-programmable gate array(FPGA) with the phase-lock closed-loop control method is described and a demodulation method for phase error suppression is given.Compared with the analog circuit,the bias drift is largely reduced in the new digital circuit and the bias stability is improved from 60 to 19 °/h.The new digital control method can greatly increase the drive phase accuracy,and thus improve the bias stability.
文摘The purpose of this work relates to study on the characteristics of ultra thin gate oxide (2 5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments are carried out by depositing a few ppm contaminated metal and low pH solutions on the wafers.The maximum metal surface concentration is controlled at about 10 12 cm -2 level in order to simulate metal contamination during ultra clean processing.A ramped current stress for intrinsic charge to breakdown measurements with gate injection mode is used to examine the characteristics of these ultra thin gate oxides and the effect of metal contamination on GOI.It is the first time to investigate the influence of metal Zr and Ta contamination on 2 5nm ultra thin gate oxide.It is demonstrated that there is little effect of Al contamination on GOI,while Zr contamination is the most detrimental to GOI,and early breakdown has happened to wafers contaminated by Ta.