Ultra-Low Linewidth Frequency Stabilized Integrated Lasers: A New Frontier in Integrated Photonics

With the advancement of photonic integration technology,ultra-low linewidth frequency-stabilized lasers have demonstrated significant potential in precision measurement,quantum communication,atomic clocks,etc.This review summarizes the latest developments in integrated photonics for achieving ultra-low linewidth lasers,particularly breakthroughs made by integrating Brillouin lasers.We discuss the design principles,manufacturing processes,performance characteristics,and potential value of these lasers in various applications.

Multifunctional interface between integrated photonics and free space

The combination of photonic integrated circuits and free-space metaoptics has the ability to untie technological knots that require advanced light manipulation due to their conjoined ability to achieve strong light-matter interaction via wave-guiding light over a long distance and shape them via large space-bandwidth product.Rapid prototyping of such a compound system requires component interchangeability.This represents a functional challenge in terms of fabrication and alignment of high-performance optical systems.Here,we report a flexible and interchangeable interface between a photonic integrated circuit and the free space using an array of low-loss metaoptics and demonstrate multifunctional beam shaping at a wavelength of 780 nm.We show that robust and high-fidelity operation of the designed optical functions can be achieved without prior precise characterization of the free-space input nor stringent alignment between the photonic integrated chip and the metaoptics chip.A diffraction limited spot of∼3μm for a hyperboloid metalens of numerical aperture 0.15 is achieved despite an input Gaussian elliptical deformation of up to 35%and misalignments of the components of up to 20μm.A holographic image with a peak signal-to-noise ratio of>10 dB is also reported.

Stochastic collocation for device-level variability analysis in integrated photonics

We demonstrate the use of stochastic collocation to assess the performance of photonic devices under the effect of uncertainty. This approach combines high accuracy and efficiency in analyzing device variability with the ease of implementation of sampling-based methods. Its flexibility makes it suitable to be applied to a large range of photonic devices. We compare the stochastic collocation method with a Monte Carlo technique on a numerical analysis of the variability in silicon directional couplers.

Nonlinear integrated photonics

The field of nonlinear photonics is in full development. This special issue of Photonics Research takes you through the current issues of this fast-growing field of research, drawing on the current state of the art and seeking, through a selection of articles, to outline some trends for the future.

Applications of thin-film lithium niobate in nonlinear integrated photonics

Photonics on thin-film lithium niobate(TFLN)has emerged as one of the most pursued disciplines within integrated optics.Ultracompact and low-loss optical waveguides and related devices on this modern material platform have rejuvenated the traditional and commercial applications of lithium niobate for optical modulators based on the electro-optic effect,as well as optical wavelength converters based on secondorder nonlinear effects,e.g.,second-harmonic,sum-,and difference-frequency generations.TFLN has also created vast opportunities for applications and integrated solutions for optical parametric amplification and oscillation,cascaded nonlinear effects,such as low-harmonic generation;third-order nonlinear effects,such as supercontinuum generation;optical frequency comb generation and stabilization;and nonclassical nonlinear effects,such as spontaneous parametric downconversion for quantum optics.Recent progress in nonlinear integrated photonics on TFLN for all these applications,their current trends,and future opportunities and challenges are reviewed.

Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era.Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed,less power dissipation,and lower cost in IC industry,because their COMS compatibility,fast response,and high monolithic integration capability.Particularly,compared with other on-chip resonators(e.g.microrings,2D photonic crystal cavities)silicon-on-insulator(SOI)-based photonic crystal nanobeam cavity(PCNC)has emerged as a promising platform for on-chip integration,due to their attractive properties of ultra-high Q/V,ultra-compact footprints and convenient integration with silicon bus-waveguides.In this paper,we present a comprehensive review on recent progress of on-chip PCNC devices for lasing,modulation,switching/filting and label-free sensing,etc.

Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states

Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.

Graphene integrated photodetectors and opto-electronic devices — a review

Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation, high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics, We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.

Recent progress in integrated electro-optic frequency comb generation

Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwave waveform synthesis,signal processing,and communications.Several techniques exist to generate optical frequency combs,such as mode-locked lasers,Kerr micro-resonators,and electro-optic modulation.Important characteristics of optical frequency combs include the number of comb lines,their spacing,spectral shape and/or flatness,and intensity noise.While mode-locked lasers and Kerr micro-resonators can be used to obtain a large number of comb lines compared to electro-optic modulation,the latter provides increased flexibility in tuning the comb spacing.For some applications in optical communications and microwave photonics,a high degree of integration may be more desirable over a very large number of comb lines.In this paper,we review recent progress on integrated electro-optic frequency comb generators,including those based on indium phosphide,lithium niobate,and silicon photonics.

High performance integrated photonic circuit based on inverse design method

The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The overall size of the circuit is large,usually reaches hundreds of microns.Besides,it is difficult to balance the ultrafast response and ultra-low energy consumption problem,and the crosstalk between two traditional devices is difficult to overcome.Here,we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density,ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate.The feature size of the whole circuit is only 2.5μm×7μm,and that of a single device is 2μm×2μm.The distance between two adjacent devices is as small as 1.5μm,within wavelength magnitude scale.Theoretical response time of the circuit is 150 fs,and the threshold energy is within 10 fJ/bit.We have also considered the crosstalk problem.The circuit also realizes a function of identifying two-digit logic signal results.Our work provides a new idea for the design of ultrafast,ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.

Avalanche photodiodes on silicon photonics

Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.

Hybrid material integration in silicon photonic integrated circuits

Hybrid integration ofⅢ-Ⅴand ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon PICs.Similar approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths,higher linearity,lower optical loss integrated optical modulators on chip.In this paper,we review existing integration strategies ofⅢ-Ⅴmaterials and present a route towards hybrid integration of bothⅢ-Ⅴand ferroelectrics on the same chip.We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to approaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybridⅢ-Ⅴintegration with silicon PICs.Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

Science Letters:The Moore’s Law for photonic integrated circuits

We formulate a “Moore’s law” for photonic integrated circuits (PICs) and their spatial integration density using two methods. One is decomposing the integrated photonics devices of diverse types into equivalent basic elements, which makes a comparison with the generic elements of electronic integrated circuits more meaningful. The other is making a complex compo- nent equivalent to a series of basic elements of the same functionality, which is used to calculate the integration density for func- tional components realized with different structures. The results serve as a benchmark of the evolution of PICs and we can con- clude that the density of integration measured in this way roughly increases by a factor of 2 per year. The prospects for a continued increase of spatial integration density are discussed.

Photonic integrated neuro-synaptic core for convolutional spiking neural network

Neuromorphic photonic computing has emerged as a competitive computing paradigm to overcome the bottlenecks of the von-Neumann architecture.Linear weighting and nonlinear spike activation are two fundamental functions of a photonic spiking neural network(PSNN).However,they are separately implemented with different photonic materials and devices,hindering the large-scale integration of PSNN.Here,we propose,fabricate and experimentally demonstrate a photonic neuro-synaptic chip enabling the simultaneous implementation of linear weighting and nonlinear spike activation based on a distributed feedback(DFB)laser with a saturable absorber(DFB-SA).A prototypical system is experimentally constructed to demonstrate the parallel weighted function and nonlinear spike activation.Furthermore,a fourchannel DFB-SA laser array is fabricated for realizing matrix convolution of a spiking convolutional neural network,achieving a recognition accuracy of 87%for the MNIST dataset.The fabricated neuro-synaptic chip offers a fundamental building block to construct the large-scale integrated PSNN chip.

Silicon photonics for telecom and data‐com applications

In recent decades,silicon photonics has attracted much attention in telecom and data-com areas.Constituted of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared spectrum.The main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low cost.On the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in networks.In practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned above.CMOS-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.

Digital synthesis of programmable photonic integrated circuits

Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular synthesis algorithm often only accounts for a specific function with a specific cell configuration.In this paper,we try to synthesize the programmable waveguide mesh to support multiple configurations with a more general digital signal processing platform.To show the feasibility of this technique,photonic waveguide meshes in different configurations(square,triangular and hexagonal meshes)are designed to realize optical signal interleaving with arbitrary duty cycles.The digital signal processing(DSP)approach offers an effective pathway for the establishment of a general design platform for the software-defined programmable photonic integrated circuits.The use of well-developed DSP techniques and algorithms establishes a link between optical and electrical signals and makes it convenient to realize the computer-aided design of optics–electronics hybrid systems.

High-intensity spatial-mode steerable frequency up-converter toward on-chip integration

Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.

Eight-channel microwave photonics transceiver photonic integrated circuit

Microwave photonics(MWP)studies the interaction between microwaves and light waves,including the generation,transmission,and processing of microwave signals.Integrated MWP using photonic integrated circuits(PICs)can achieve compact,reliable,and green implementation.However,most PICs have recently been developed that only contain one or a few devices.Here,we propose a multi-channel PIC that covers almost all devices in MWP.Our PIC integrates lasers,modulators,amplifiers,and detectors in the module,successfully manufacturing an eight-channel array transceiver module.We conducted performance tests on the encapsulated transceiver module and found that the cascaded bandwidth of the eightchannel transceiver module was greater than 40 GHz,and the spurious-free dynamic range(SFDR)of the broadband array receiver module was greater than 94 dBm·Hz2/3.The noise figure(NF)is less than-35 dB and the link gain is greater than-26 dB.The success of multi-channel PIC marks a crucial step forward in the implementation of large-scale MWP.

Robust optical mode converter based on topological waveguide arrays

Optical mode converters are essential for enhancing the capacity of optical communication systems. However, fabrication errors restrict the further improvement of conventional mode converters. To address this challenge, we have designed an on-chip TE0–TE1mode converter based on topologically protected waveguide arrays. The simulation results demonstrate that the converter exhibits a mode coupling efficiency of 93.5% near 1550 nm and can tolerate a relative fabrication error of 30%. Our design approach can be extended to enhance the robustness for other integrated photonic devices, beneficial for future development of optical network systems.

High polarization extinction ratio achieved base on thin-film lithium niobate

This article introduces a method of achieving high polarization extinction ratio using a subwavelength grating structure on a lithium niobate thin film platform,and the chip is formed on the surface of the lithium nio⁃bate thin film.The chip,with a length of just 20μm,achieved a measured polarization extinction ratio of 29 dB at 1550 nm wavelength.This progress not only proves the possibility of achieving a high extinction ratio on a lith⁃ium niobate thin film platform,but also offers important technical references for future work on polarization beam splitters,integrated fiber optic gyroscopes,and so on.