A new high-voltage LDMOS with folded drift region （FDR LDMOS） is proposed. The drift region is folded by introducing the interdigital oxide layer in the： Si active layer, the result of which is that the effective l...A new high-voltage LDMOS with folded drift region （FDR LDMOS） is proposed. The drift region is folded by introducing the interdigital oxide layer in the： Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has been improved by the shielding effect of the electric field from the holes accumulated in the surface of the device and the buried oxide layer. The numerical results indicate that the breakdown voltage of 700 V is obtained in the proposed device in comparison to 300 V of conventional LDMOS, while maintaining low on-resistance.展开更多
基金Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC(No.KFJJ201205)the Guangxi Department of Education(No.201202ZD041)+1 种基金the China Postdoctoral Science Foundation(Nos.2012M521127,2013T60566)the National Natural Science Foundation of China(Nos.61361011,61274077,61464003)
文摘A new high-voltage LDMOS with folded drift region （FDR LDMOS） is proposed. The drift region is folded by introducing the interdigital oxide layer in the： Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has been improved by the shielding effect of the electric field from the holes accumulated in the surface of the device and the buried oxide layer. The numerical results indicate that the breakdown voltage of 700 V is obtained in the proposed device in comparison to 300 V of conventional LDMOS, while maintaining low on-resistance.
