Thermal conduetances between Cu and graphene covered carbon nanotubes （gCNTs） are calculated by molecular dynamics simulations. The results show that the thermal conductance is about ten times larger than that of Cu...Thermal conduetances between Cu and graphene covered carbon nanotubes （gCNTs） are calculated by molecular dynamics simulations. The results show that the thermal conductance is about ten times larger than that of Cu- CNT interface. The enhanced thermal conductance is due to the larger contact area introduced by the graphene layer and the stronger thermal transfer ability of the Cu-gCNT interface. From the linear increasing thermal conductance with the increasing total contact area, an effective contact area of such an interface can be defined.展开更多
Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high re...Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.展开更多
Atomic characterization on tetragonal FeAs layer and engineering FeAs superlattices is highly desirable to get deep insight into the multi-band superconductivity in iron-pnictides.We fabricate the tetragonal FeAs laye...Atomic characterization on tetragonal FeAs layer and engineering FeAs superlattices is highly desirable to get deep insight into the multi-band superconductivity in iron-pnictides.We fabricate the tetragonal FeAs layer by topotactic reaction of FeTe films with arsenic and then obtain KxFe_(2)As_(2)upon potassium intercalation using molecular beam epitaxy.The in-situ low-temperature√2×√2scanning tunneling microscopy/spectroscopy investigations demonstrate characteristic reconstruction of the FeAs layer and stripe pattern of KxFe_(2)As_(2),accompanied by the development of a superconducting-like gap.The ex-situ transport measurement with FeTe capping layers shows a superconducting transition with an onset temperature of 10 K.This work provides a promising way to characterize the FeAs layer directly and explore rich emergent physics with epitaxial superlattice design.展开更多
基金Supported by the National National Science Foundation of China under Grant No 61131004the Fundamental Research Funds for the Central Universities under Grant No DUT14LAB11
文摘Thermal conduetances between Cu and graphene covered carbon nanotubes （gCNTs） are calculated by molecular dynamics simulations. The results show that the thermal conductance is about ten times larger than that of Cu- CNT interface. The enhanced thermal conductance is due to the larger contact area introduced by the graphene layer and the stronger thermal transfer ability of the Cu-gCNT interface. From the linear increasing thermal conductance with the increasing total contact area, an effective contact area of such an interface can be defined.
基金supported by the National Key R&D Program of China under Grant No.2018YFA0701500the National Natural Science Foundation of China under Grant Nos.61825404,U20A20220,61732020,and 61851402+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000the China Postdoctoral Science Foundation under Grant No.2020M681167。
文摘Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.
基金supported by the National Natural Science Foundation of China(Nos.12074210,51788104,11790311,and 12141403)the Basic and Applied Basic Research Major Programme of Guangdong Province of China(No.2021B0301030003)Jihua Laboratory(Project No.X210141TL210).
文摘Atomic characterization on tetragonal FeAs layer and engineering FeAs superlattices is highly desirable to get deep insight into the multi-band superconductivity in iron-pnictides.We fabricate the tetragonal FeAs layer by topotactic reaction of FeTe films with arsenic and then obtain KxFe_(2)As_(2)upon potassium intercalation using molecular beam epitaxy.The in-situ low-temperature√2×√2scanning tunneling microscopy/spectroscopy investigations demonstrate characteristic reconstruction of the FeAs layer and stripe pattern of KxFe_(2)As_(2),accompanied by the development of a superconducting-like gap.The ex-situ transport measurement with FeTe capping layers shows a superconducting transition with an onset temperature of 10 K.This work provides a promising way to characterize the FeAs layer directly and explore rich emergent physics with epitaxial superlattice design.
