Chemical doping is a powerful method to intrinsically tailor the electrochemical properties of electrode materials.Here,an interstitial boron-doped tunnel-type VO_(2)(B)is constructed via a facile hydrothermal method....Chemical doping is a powerful method to intrinsically tailor the electrochemical properties of electrode materials.Here,an interstitial boron-doped tunnel-type VO_(2)(B)is constructed via a facile hydrothermal method.Various analysis techniques demonstrate that boron resides in the interstitial site of VO_(2)(B)and such interstitial doping can boost the zinc storage kinetics and structural stability of VO_(2)(B)cathode during cycling.Interestingly,we found that the boron doping level has a saturation limit peculiarity as proved by the quantitative analysis.Notably,the 2 at.%boron-doped VO_(2)(B)shows enhanced zinc ion storage performance with a high storage capacity of 281.7 mAh g^(-1) at 0.1 A g^(-1),excellent rate performance of 142.2 mAh g^(-1) at 20 A g^(-1),and long cycle stability up to 1000 cycles with the capacity retention of 133.3 mAh g^(-1) at 5 A g^(-1).Additionally,the successful preparation of the boron-doped tunneltype α-MnO_(2) further indicates that the interstitial boron doping approach is a general strategy,which supplies a new chance to design other types of functional electrode materials for multivalence batteries.展开更多
The AC aging characteristics and mechanism of ZnO varistors have been widely concerned for a long time.In this paper,accelerated aging test of ZnO varistors was carried out based on the "ten degrees and a half&qu...The AC aging characteristics and mechanism of ZnO varistors have been widely concerned for a long time.In this paper,accelerated aging test of ZnO varistors was carried out based on the "ten degrees and a half" rule,power loss and thermally stimulated current(TSC) of samples were tested during each aging stage.The test results show that with the increasing of aging time,the power loss increases,the trapped charges increase and the trap level becomes deeper.In addition,the increase of power loss and the increase of trapped charge with the aging time have the same trend.A preliminary analysis shows that the migration of interstitial zinc ions will change the space charge distribution and decrease the Schottky barrier height to cause the change of the trap level.展开更多
基金Key R&D projects of Henan Province,Grant/Award Number:221111240600National Natural Science Foundation of China,Grant/Award Numbers:U1704256,52272243,52202316+2 种基金Natural Science Foundation of Henan Province,Grant/Award Numbers:212300410300,212300410416PhD Research Fund Project,Grant/Award Number:13501050089School Key Project,Zhengzhou University of Light Industry,Grant/Award Number:2021ZDPY0203。
文摘Chemical doping is a powerful method to intrinsically tailor the electrochemical properties of electrode materials.Here,an interstitial boron-doped tunnel-type VO_(2)(B)is constructed via a facile hydrothermal method.Various analysis techniques demonstrate that boron resides in the interstitial site of VO_(2)(B)and such interstitial doping can boost the zinc storage kinetics and structural stability of VO_(2)(B)cathode during cycling.Interestingly,we found that the boron doping level has a saturation limit peculiarity as proved by the quantitative analysis.Notably,the 2 at.%boron-doped VO_(2)(B)shows enhanced zinc ion storage performance with a high storage capacity of 281.7 mAh g^(-1) at 0.1 A g^(-1),excellent rate performance of 142.2 mAh g^(-1) at 20 A g^(-1),and long cycle stability up to 1000 cycles with the capacity retention of 133.3 mAh g^(-1) at 5 A g^(-1).Additionally,the successful preparation of the boron-doped tunneltype α-MnO_(2) further indicates that the interstitial boron doping approach is a general strategy,which supplies a new chance to design other types of functional electrode materials for multivalence batteries.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50577021,50877025)the Doctor Program Foundation of Institutions Higher Education of China (Grant Nos. 200800790004)
文摘The AC aging characteristics and mechanism of ZnO varistors have been widely concerned for a long time.In this paper,accelerated aging test of ZnO varistors was carried out based on the "ten degrees and a half" rule,power loss and thermally stimulated current(TSC) of samples were tested during each aging stage.The test results show that with the increasing of aging time,the power loss increases,the trapped charges increase and the trap level becomes deeper.In addition,the increase of power loss and the increase of trapped charge with the aging time have the same trend.A preliminary analysis shows that the migration of interstitial zinc ions will change the space charge distribution and decrease the Schottky barrier height to cause the change of the trap level.
