The inverse slope method (ISM) was used to interpret electric sounding data to determine the geoelectric parameters of the alteration zones (continuous media) and rocky environments (discontinuous environments) of the...The inverse slope method (ISM) was used to interpret electric sounding data to determine the geoelectric parameters of the alteration zones (continuous media) and rocky environments (discontinuous environments) of the Bouna Department. Having both qualitative and quantitative interpretation, the inverse slope method (ISM) has the ability to determine the different geoelectric layers while characterizing their resistivities and true thicknesses. In the Bouna department, this method allowed us to count a maximum of four (4) geoelectric layers with a total thickness ranging from 12.99 m to 24.66 m. The alteration thicknesses calculated by the ISM in comparison with those measured in the boreholes showed a linear agreement of the coefficient of determination R2 = 0.8269 with the support of the Nash criterion which showed that this method gave thicknesses of alteration close to 76.76% of that obtained during the drillings.展开更多
Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-dra...Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.展开更多
基金This research was supported by the Hydrogeology Research Group of the Geosciences and Environment Laboratory at Nangui Abrogoua University in Abidjan,Ivory Coast.
文摘The inverse slope method (ISM) was used to interpret electric sounding data to determine the geoelectric parameters of the alteration zones (continuous media) and rocky environments (discontinuous environments) of the Bouna Department. Having both qualitative and quantitative interpretation, the inverse slope method (ISM) has the ability to determine the different geoelectric layers while characterizing their resistivities and true thicknesses. In the Bouna department, this method allowed us to count a maximum of four (4) geoelectric layers with a total thickness ranging from 12.99 m to 24.66 m. The alteration thicknesses calculated by the ISM in comparison with those measured in the boreholes showed a linear agreement of the coefficient of determination R2 = 0.8269 with the support of the Nash criterion which showed that this method gave thicknesses of alteration close to 76.76% of that obtained during the drillings.
文摘Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.
