Highly Conductive Proton Selectivity Membrane Enabled by Hollow Carbon Sieving Nanospheres for Energy Storage Devices

Ion conductive membranes(ICMs)with highly conductive proton selectivity are of significant importance and greatly desired for energy storage devices.However,it is extremely challenging to construct fast proton-selective transport channels in ICMs.Herein,a membrane with highly conductive proton selectivity was fabricated by incorporating porous carbon sieving nanospheres with a hollow structure(HCSNs)in a polymer matrix.Due to the precise ion sieving ability of the microporous carbon shells and the fast proton transport through their accessible internal cavities,this advanced membrane presented a proton conductivity(0.084 S·cm^(-1))superior to those of a commercial Nation 212(N212)membrane(0.033S·cm^(-1))and a pure polymer membrane(0.049 S·cm^(-1)).The corresponding proton selectivity of the membrane(6.68×10^(5) S·min·cm^(-3))was found to be enhanced by about 5.9-fold and 4.3-fold,respectively,compared with those of the N212 membrane(1.13×10^(5) S·min·cm^(-3))and the pure membrane(1.56×10^(5) S·min·cm^(-3)).Low-field nuclear magnetic resonance(LF-NMR)clearly revealed the fast protonselective transport channels enabled by the HCSNs in the polymeric membrane.The proposed membrane exhibited an outstanding energy efficiency(EE)of 84%and long-term stability over 1400 cycles with a0.065%capacity decay per cycle at 120 mA·cm^(-2) in a typical vanadium flow battery(VFB)system.

Flexible multiterminal photoelectronic neurotransistors based on self‐assembled rubber semiconductors for spatiotemporal information processing

A significant step toward constructing high‐efficiency neuromorphic systems is the electronic emulation of advanced synaptic functions of the human brain.While previous studies have focused on mimicking the basic functions of synapses using single‐gate transistors,multigate transistors offer an opportunity to simulate more complex and advanced memory‐forming behaviors in biological synapses.In this study,a simple and general method is used to assemble rubber semiconductors into suspended two‐phase composite films that are transferred to the surface of the ion‐conducting membrane to fabricate flexible multiterminal photoelectronic neurotransistors.The suspended ion conductive film is used as the gate dielectrics and supporting substrate.The prepared devices exhibit excellent electrical stability and mechanical flexibility after being bent.Basic photoelectronic synaptic behavior and pulse‐dependent plasticity are emulated.Furthermore,the device realizes the spatiotemporally integrated electrical and optical stimuli to mimic spatiotemporal information processing.This study provides a promising direction for constructing more complex spiking neural networks and more powerful neuromorphic systems with brain‐like dynamic spatiotemporal processing functions.