Effects of low-dose heavy ion irradiation on male germ cell adaptation and genetics

The heavy ions with high linear energy transfer and high relative biological effectiveness are much more deleterious on the male germ cells, ones of the most radiosensitive cells of the body,than low-LET ionizing radiation such as X-ray or gamma-ray. The effects of low-dose heavy ion irradiation on male germ cell adaptation and genetics and the possible mechanism of this adaptation are summarized in our laboratory. Our results showed that the heavy ion irradiation significantly increased the frequencies of chromosomal aberrations in spermatogonia and spermato-cytes of mice, the low dose heavy ion irradiation could induce significant adaptative response on mouse testes and human sperm, and pre-exposure of mouse testes with low-dose heavy ion can markedly alleviate damage effects in-duced by subsequent high-dose irradiation. The increase of SOD activity and decrease of lipid peroxidation levels induced by low-dose ionizing radiation may be involved in this adaptative response mechanism. These studies may provide useful theoretical and clinical bases for radioprotection of reproductive potential and assessment of genetic risks for human exposed to heavy ions in radiotherapy and in outer space environment.

Dose Effects of Ion Beam Exposure on Deinococcus Radiodurans: Survival and Dose Response

To explore the survival and dose response of organism for different radiation sources is of great importance in the research of radiobiology. In this study, the survival-dose response of Deinococcus radiodurans (E.coli, as the control) for ultra-violet (UV), γ-rays radiation and ion beam exposure was investigated. The shoulder type of survival curves were found for both UV and γ-ray ionizing radiation, but the saddle type of survival curves were shown for H+、 N+( 20keV and 30keV) and Ar+ beam exposure. This dose effect of the survival initially decreased with the increase in dose and then increased in the high dose range and finally decreased again in the higher dose range. Our experimental results suggest that D. radiodurans, which is considerably radio-resistant to UV and x-ray and γ-ray ionizing radiation, do not resist ion beam exposure.

Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX

In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.

A COMPUTER SIMULATION OF HIGH-DOSE ION IMPLANTATION INTO AMORPHOUS MATERIALS

A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

The influences of total ionizing dose （TID） on the single event effect （SEE） sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset （SEU） in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by 7-rays and heavy ions. Retention errors in floating gate （FG） cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer （LET） value. The underlying mechanism is identified as the combination of the defects induced by 7-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling （m- TAT） path across the tunnel oxide.

EFFECTS OF COPPER ION IMPLANTATION ON ANTIBACTERIAL ACTIVITY OF AISI420 STAINLESS STEEL

Antibacterial activity of AISI420 stainless steel (SS) implanted by copper was investigated. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 100keV energy and a dose range from 0.2×1017 to 2.0×1017ions·cm-2. The saturation dose of Cu implantation in AISI420 SS and Cu surface concentration were calculated at the energy of 100keV. The effect of dose on the antibacterial activity was analyzed. Results of antibacterial test show that the saturation dose is the optimum implantation dose for best antibacterial activity, which is above 99% against both Escherichia coli and Staphylococcus aureus. Novel phases such as Fe4Cu3 and Cu9.9Fe0.1 were found in the implanted layer by glancing angle X-ray diffraction (GXRD). The antibacterial activity of AISI420 SS attributes to Cu-contained phase.

EFFECT OF COPPER IMPLANTATION ON ANTIBACTERIAL ACTIVITY OF AUSTENITIC STAINLESS STEEL

Antibacterial activity has been studied by copper ion implantation into 0Cr18Ni9 stainless steel. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 60-100keV energy and a dose range (0.2-2.0)×1017 ions cm-2. Saturation doses, surface concentration were calculated and the relationships between energy, dose and antibacterial activity were analyzed. Novel phases such as Fe4Cu3 and Cu0.81Ni0.19 were found after copper implantation by X-ray diffraction. The novel phases, effects on antibacterial activity have been investigated. The results show that saturation dose varies with the ions' energy. Antibacterial activity has close relation with copper,s concentration in implanted layer and Cu-rich phase.

Research for radiation-hardened high-voltage SOI LDMOS

Based on the silicon-on-insulator(SOI) technology and radiation-hardened silicon gate(RSG) process, a radiation-hardened high-voltage lateral double-diffused MOSFET(LDMOS) device is presented in this paper. With the gate supply voltage of 30 V, the LDMOS device has a gate oxide thickness of 120 nm, and the RSG process is effective in reducing the total ionizing dose(TID) radiation-induced threshold voltage shift. The p-type ion implantation process and gate-enclosed layout topology are used to prevent radiation-induced leakage current through a parasitic path under the bird's beak and at the deep trench corner,and the device is compatible with high-voltage SOI CMOS process. In the proposed LDMOS, the total ionizing dose radiation degradation for the ON bias is more sensitive than the OFF bias. The experiment results show that the SOI LDMOS has a negative threshold voltage shift of 1.12 V, breakdown voltage of 135 V, and off-state leakage current of 0.92 pA/μm at an accumulated dose level of 100 krad(Si).

Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on ＂the shape of saddle＂, but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7x 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to Mr. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5×10^17 nitrogen ions/cm^2, and the weight of succulent root and the volume of growth were over twice the control＇s. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables＇ genetic improvement.

Research on the radiation hardened SOI devices with single-step Si ion implantation

Silicon-on-insulator（SOI） devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal–oxide–semiconductor transistor（CMOS） process is used to harden the SOI wafer.The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods.The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly.The metastable electron traps introduced by Si implantation is also investigated by electrical stress.The results show that these traps are very instable,and electrons will tunnel into or out of the metastable electron traps quickly after hot-electroninjection or hot-hole-injection.

Calculation of response of Chinese hamster cells to ions based on track structure theory

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Effect of Implantation Machine Parameters on N^+ ion Implantation for Upland Cotton(Gossypium hirsutum L.)Pollen

Effect of parameters of ion implantation machine, including ion energy, total dose, dose rate, impulse energy and implantation interval on the pollen grains of upland cotton implanted with nitrogen ion beam were studied. The best parameters were screened out. The results also showed that the vacuum condition before the nitrogen ion implantation does not affect the pollen viability.

INVESTIGATION INTO THE SURFACE ENERGY OF IMPLANTED SURFACES

The critical surface energy of steels surface modified by ion implantation was evaluated. Zisman’s method was used to investigate the critical surface energy of 40Cr, # 45, GCr15, 1Crl8Ni9Ti steels implanted under the different conditions from the contact angle data. The critical surface energy in steel shows a general tendency to decrease with the increase of implanting energy and dose. On the grounds of the relationship between the energy of adhesion of sliding interfaces and the solid surface energy, reduction of friction and increase of wear resistance of the implanted surfaces have been demonstrated experimentally.

Pre-exposure effect of low-dose ^(16)O^(8+) or γ-rays on testicular endocrine of mice

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Neutrons produced by 75 MeV/u ^(12)C-ion on thick targets

Fluence rates and angular distributions of the neutron emitted by75 MeV/u 12C-ion bombardment on thick Be and An targets have been measured bymeans of the threshold detector activation method. Based on that, the neutron yields,emission rates in the forward direction and neutron dose equivalent rate distributionswere deduced.

An online monitor ionization chamber used in particle therapy

The clinical trials of tumor therapy using heavy ions beam 12C are now in progress at Institute of Modern Physics in Lanzhou. In order to achieve the precise radiotherapy with the high energy 12C beam in active pencil beam scanning mode, we have developed an ionization chamber(IC) as an online monitor for beam intensity and also a dosimeter after calibration. Through the choosing of working gas and voltage, optimizing of the electrics and the read-out system, calibrating the linearity, the detector system provide us one of the simple and highly reliable way to monitoring the beam during the active pencil beam scanning treatments. The measurement results of this detector system show that it could work well under the condition of high energy 12C beam in active pencil beam scanning mode.

Neutron distribution and yield produced by 50 MeV/u^(18)O-ion on thick targets

Neutron energy, fluence rate, angular distributions and dose equivalent rate distributions around the thick Be, Cu, An targets bombarded by 50 MeV/u 18O-ion were measured using a threshold detector activation method. At the same time,the neutron yields of 18O-ion and the neutron emission rates in the forward direction were obtained approximately.

Low dose effects on cultured mammalian cells...

The low dose effects induced by carbon ions on Chinese hamster V79 cells and murine melanoma B16 cells were investigated in this paper. Both cell lines were divided into four groups for irradiation: (1) control, (2) 0.02 Gy or 0.05 Gy(D1), (3) 1 Gy(D2), (4) D1+D2. The survivors and micronuclei were studied as biological endpoints. The results of group (1) and group (2) showed that there were no obvious differences on micronucleus frequency but there were significant increases when irradiation dose was 0.02Gy on colony formation efficiency. Although low dose ion irradiation could not contribute to DNA damages, it could enhance the colony formation efficiency. In the study of group (3) and (4), when the ion dose was 0.02 Gy, there were evident increases on surviving fraction and decreases on micronucleus frequency, but there were no statistical changes on these endpoints when the ion dose was 0.05Gy. This meant that high LET radiation could induce the adaptive response of cultured cells, furthermore, in the range of inducing ion dose , low dose irradiation was more profitable than high dose one.