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Phase shift effects of radio-frequency bias on ion energy distribution in continuous wave and pulse modulated inductively coupled plasmas
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作者 Chan Xue Fei Gao +2 位作者 Yong-Xin Liu Jia Liu You-Nian Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第4期346-351,共6页
A retarding field energy analyzer(RFEA) is used to measure the time-averaged ion energy distributions(IEDs) on the substrate in both continuous wave(CW) and synchronous pulse modulated radio-frequency(RF) indu... A retarding field energy analyzer(RFEA) is used to measure the time-averaged ion energy distributions(IEDs) on the substrate in both continuous wave(CW) and synchronous pulse modulated radio-frequency(RF) inductively coupled Ar plasmas(ICPs).The effects of the phase shift θ between the RF bias voltage and the RF source on the IED is investigated under various discharge conditions.It is found that as θ increases from 0 to π,the IED moves towards the low-energy side,and its energy width becomes narrower.In order to figure out the physical mechanism,the voltage waveforms on the substrate are also measured.The results show that as θ increases from 0 to π,the amplitude of the voltage waveform decreases and,meanwhile,the average sheath potential decreases as well.Specifically,the potential drop in the sheath on the substrate exhibits a maximum value at the same phase(i.e.,θ = 0) and a minimum value at the opposite phase(i.e.,θ = π).Therefore,when ions traverse across the sheath region above the substrate,they obtain less energies at lower sheath potential drop,leading to lower ion energy.Besides,as θ increases from π to 2π,the IEDs and their energy widths change reversely. 展开更多
关键词 ion energy distribution phase shift synchronous pulse modulated inductively coupled plasmas
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Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)
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作者 李茂洋 莫超超 +7 位作者 陈佳丽 季佩宇 谭海云 张潇漫 崔美丽 诸葛兰剑 吴雪梅 黄天源 《Plasma Science and Technology》 SCIE EI CAS CSCD 2024年第7期116-122,共7页
This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,att... This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers. 展开更多
关键词 RF magnetron sputtering ITO film ion energy distribution functions plasma diagnosis
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Reconstruction of Ionization Density Distribution in Hall Thruster Channel from Ion Energy Spectrum of Plasma Jet
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作者 李玉全 于达仁 《Plasma Science and Technology》 SCIE EI CAS CSCD 2006年第6期666-669,共4页
Propellant ionization in the Hall thruster discharge channel is a significant process and has strong influence on the thruster's efficiency. In this work, the functional relation has been established between the ioni... Propellant ionization in the Hall thruster discharge channel is a significant process and has strong influence on the thruster's efficiency. In this work, the functional relation has been established between the ionization density distribution and the function of the ion energy distribution through the basic equations governing the ion flow in the Hall thruster channel and the method achieved for reconstructing the ionization density distribution inside the channel by ordinary plasma diagnosis of the potential distribution and ion energy spectrum of the plasma jet. The ionization density distributions of single and double charged ions in an ATON-thruster channel have been reconstructed according to the experimental data of the potential distribution along the axis of the channel and the ion energy spectrum of the plasma jet. The agreement between the calculation and experimental results of the percentage of double charged ions proves the validity of our method achieved in this work. 展开更多
关键词 ionization density distribution ion energy spectrum ion energy distribution function atom densitv acceleration voltage
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Effect of Frequency and Power of Bias Applied to Substrate on Plasma Property of Very-High-Frequency Magnetron Sputtering 被引量:1
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作者 刘毅 叶超 +1 位作者 何海杰 王响英 《Plasma Science and Technology》 SCIE EI CAS CSCD 2015年第7期583-588,共6页
The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz(VHF) magnetron sputtering was investigated.The plasma properties include the ion velocity distribution funct... The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz(VHF) magnetron sputtering was investigated.The plasma properties include the ion velocity distribution function(IVDF),electron energy probability function(EEPF),electron density ne,ion flux Γi,and effective electron temperature Teff.These parameters were measured by a retarding field energy analyzer and a Langmuir probe in the 60 MHz magnetron sputtering,assisted with 13.56 MHz or 27.12 MHz substrate bias.The 13.56 MHz substrate bias led to broadening and multi-peaks IVDFs,Maxwellian EEPFs,as well as high electron density,ion flux,and low electron temperature.The 27.12 MHz substrate bias led to a further increase of electron density and ion flux,but made the IVDFs narrow.Therefore,the frequency of the substrate bias was a possible way to control the plasma properties in VHF magnetron sputtering. 展开更多
关键词 VHF magnetron sputtering RF substrate bias ion energy distribution elec-tron energy distribution
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