Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors (HEMTs) quantitatively. For the non-recess...Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors (HEMTs) quantitatively. For the non-recessed HEMT, the trap state density decreases from 2.48 × 1013 cm-2.eV-1 at an energy of 0.29 eV to 2.79 × 1012 cm-2.eV-1 at ET = 0.33 eV. In contrast, the trap state density of 2.38 × 1013-1.10× 1014 cm-2.eV-1 is located at ET in a range of 0.30-0.33 eV for the recessed HEMT. Thus, lots of trap states with shallow energy levels are induced by the gate recess etching. The induced shallow trap states can be changed into deep trap states by 350 ℃ annealing process. As a result, there are two different types of trap sates, fast and slow, in the annealed HEMT. The parameters of the annealed HEMT are ET = 0.29-0.31 eV and DT = 8.16× 1012-5.58 × 1013 cm-2.eV-1 for the fast trap states, and ET = 0.37-0.45 eV and DT = 1.84×1013- 8.50 × 1013 cm-2.eV-1 for the slow trap states. The gate leakage currents are changed by the etching and following annealing process, and this change can be explained by the analysis of the trap states.展开更多
A method for etching the surface of a Pyrex glass substrate using the Reactive Ion Etching process without the use of masks is reported. Variations in the machined surface on an auxiliary plate, manufactured in alumin...A method for etching the surface of a Pyrex glass substrate using the Reactive Ion Etching process without the use of masks is reported. Variations in the machined surface on an auxiliary plate, manufactured in aluminum and placed below a Pyrex glass slide, were transferred to the upper surface of the substrate. SF6 as etching gas and low pressure chamber to promote the increase of mean free path of ions were used. Two etching ratios were found, general, that affects the entire surface of the substrate, and differential, which generates the relief on the surface of the glass. Differential etching depth showed a linear behavior with respect to time;the mean differential etching rate obtained was 43 nm/min. The same phase between the auxiliary plate machining and the etched pattern on the substrate is preserved. With this technique it was possible to manufacture convex and concave surfaces;some examples are given. The arithmetic mean roughness achieved with the proposed method was found to be N1 class, ideal for the development of optical corrector plates.展开更多
With the support by the National Natural Science Foundation of China,a collaboration by the research groups led by Prof.Cheng Gang(程纲)from Henan University and Prof.Wang Zhonglin(王中林)from Beijing Institute of Nan...With the support by the National Natural Science Foundation of China,a collaboration by the research groups led by Prof.Cheng Gang(程纲)from Henan University and Prof.Wang Zhonglin(王中林)from Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,invents'a sliding-mode triboelectric nanogenerator with chemical group grated structure by shadow mask reactive ion etching',which was published in ACS Nano(2017,11(9):8796-8803).展开更多
GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with pre...GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D-A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D-A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D-A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.展开更多
Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facil...Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching(including isotropic-etching and anisotropic-etching) have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.展开更多
Phase change random access memory (PCRAM) is one of the best candidates for next generation non- volatile memory, and phase change SiESbETe5 material is expected to be a promising material for PCRAM. In the fabricat...Phase change random access memory (PCRAM) is one of the best candidates for next generation non- volatile memory, and phase change SiESbETe5 material is expected to be a promising material for PCRAM. In the fabrication of phase change random access memories, the etching process is a critical step. In this paper, the etching characteristics of Si2Sb2Te5 films were studied with a CF4/Ar gas mixture using a reactive ion etching system. We observed a monotonic decrease in etch rate with decreasing CF4 concentration, meanwhile, Ar concentration went up and smoother etched surfaces were obtained. It proves that CF4 determines the etch rate while Ar plays an im- portant role in defining the smoothness of the etched surface and sidewall edge acuity. Compared with GeESbETe5, it is found that Si2Sb2Te5 has a greater etch rate. Etching characteristics of Si2SbETe5 as a function of power and pressure were also studied. The smoothest surfaces and most vertical sidewalls were achieved using a CF4/Ar gas mixture ratio of 10/40, a background pressure of 40 mTorr, and power of 200 W.展开更多
Reactive ion etching(RIE) of LiNbO_3(LN) in SF_6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid...Reactive ion etching(RIE) of LiNbO_3(LN) in SF_6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid with a chromium film mask that has a Mach-Zehnder interferometer(MZI) array pattern.The experimental results indicate that the LN-etching rate(R_(LN)) and the Cr-etching rate(R_(Cr)) as well as the rate ratio R_(LN)/R_(Cr) increase with either increasing the radio-frequency(RF) power at a given SF_6 flow rate or increasing the SF_6 flow rate at a fixed RF power.The maximum values of R_(LN) = 43.2 nm/min and R_(LN)/R_(Cr) = 3.27 were achieved with 300 W RF power and 40 sccm SF_6 flow.When the SF_6 flow rate exceeds 40 sccm,an increase in the flow rate causes the etching rates and the rate ratio to decrease.The scanning electron microscope images of the LN ridge prepared after~20 min etching show that the ridge height is 680 nm and the sidewall slope angle is about 60°.展开更多
We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths (around 800hm). The waveguides are fabricated by a combination of MeV co...We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths (around 800hm). The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti:sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm (at -30 dB points), from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.展开更多
[Objective] The aim was to study the mechanism of the removal effect of methylene blue(MB) by rice husk ash(RHA).[Method] The effects of contact time and pH on the adsorption of MB by rice husk ash were investigated,a...[Objective] The aim was to study the mechanism of the removal effect of methylene blue(MB) by rice husk ash(RHA).[Method] The effects of contact time and pH on the adsorption of MB by rice husk ash were investigated,and the mechanism was discussed.[Result] RHA exhibited a remarkable ability on the adsorption of MB.The process of adsorption reached the equilibrium after 30 min,at about pH 9.The adsorption effect was explored with the aid of ion beam etching technique,which displayed that there were two main adsorption manners.One was the electrostatic interactions,through which the negatively charged RHA could adsorb the positively charged MB,the other was the porous effect due to the huge specific surface area of the micro/nano-scale porous silica in RHA,and MB could be adsorbed and deposited into the pores.[Conclusion] RHA could be used in the treatment of textile wastewater.Ion beam technology might be used as an effective way to investigate the adsorption effect.展开更多
Out-of-plane microneedle structures are widely used in various applications such as transcutaneous drug delivery and neural signal recording for brain machine interface.This work presents a novel but simple method to ...Out-of-plane microneedle structures are widely used in various applications such as transcutaneous drug delivery and neural signal recording for brain machine interface.This work presents a novel but simple method to fabricate high-density silicon(Si)microneedle arrays with various heights and diverse cross-sectional shapes depending on photomask pattern designs.The proposed fabrication method is composed of a single photolithography and two subsequent deep reactive ion etching(DRIE)steps.First,a photoresist layer was patterned on a Si substrate to define areas to be etched,which will eventually determine the final location and shape of each individual microneedle.Then,the 1st DRIE step created deep trenches with a highly anisotropic etching of the Si substrate.Subsequently,the photoresist was removed for more isotropic etching;the 2nd DRIE isolated and sharpened microneedles from the predefined trench structures.Depending on diverse photomask designs,the 2nd DRIE formed arrays of microneedles that have various height distributions,as well as diverse cross-sectional shapes across the substrate.With these simple steps,high-aspect ratio microneedles were created in the high density of up to 625 microneedles mm^(-2)on a Si wafer.Insertion tests showed a small force as low as~172μN/microneedle is required for microneedle arrays to penetrate the dura mater of a mouse brain.To demonstrate a feasibility of drug delivery application,we also implemented silk microneedle arrays using molding processes.The fabrication method of the present study is expected to be broadly applicable to create microneedle structures for drug delivery,neuroprosthetic devices,and so on.展开更多
One of the major challenges faced by the biomedical industry is the development of robust synthetic surfaces that can resist bacterial colonization. Much inspiration has been drawn recently from naturally occurring me...One of the major challenges faced by the biomedical industry is the development of robust synthetic surfaces that can resist bacterial colonization. Much inspiration has been drawn recently from naturally occurring mechano-bactericidal surfaces such as the wings of cicada(Psaltoda claripennis) and dragonfly(Diplacodes bipunctata) species in fabricating their synthetic analogs. However,the bactericidal activity of nanostructured surfaces is observed in a particular range of parameters reflecting the geometry of nanostructures and surface wettability. Here,several of the nanometer-scale characteristics of black silicon(bSi) surfaces including the density and height of the nanopillars that have the potential to influence the bactericidal efficiency of these nanostructured surfaces have been investigated. The results provide important evidence that minor variations in the nanoarchitecture of substrata can substantially alter their performance as bactericidal surfaces.展开更多
Titanium and titanium alloys are currently being used for clinical biomedical applications due to their high strength, corrosion resistance and elastic modulus. The Ti-30Ta alloy has gotten extensive application as th...Titanium and titanium alloys are currently being used for clinical biomedical applications due to their high strength, corrosion resistance and elastic modulus. The Ti-30Ta alloy has gotten extensive application as the important biomedical materials. The substrate surface of the Ti-30Ta alloy was altered either by chemical or topographical surface modification. The biocompatibility of an implant is closely related to its surface properties. Thus surface modification is one of effective methods for improving the biocompatibility of implants. The development status of biomedical materials has been summarized firstly, the biomedical application. In this study Ti-30Ta alloy surface was investigate as-casting (Group 1) modified with alkaline and heat-treatments in NaOH with 1.5M at 60°C for 24 hrs (Group 2), alkaline and heat-treatments with SBF-coatings by immersion in NaOH and SBFX5 for 24hrs (Group 3), anodization process was performed in an electrolyte solution containing HF (48%) and H2SO4 (98%) with the addition of 5% dimethyl sulfoxide (DMSO) 35V for 40 min (Group 4) and ion beam etching with 1200 eV ions with a beam current of 200 mA for a 3 hrs etch (Group 5). SEM was used to investigate the topography, EDS the chemical composition, and surface energy was evaluate with water contact angle measurement. SEM results show different structure on the surface for each group. EDS spectra identified similarity on Group 1, 4 and 5. The results indicate for group 2 an amorphous sodium tantalate hydrogel layer on the substrate surface and for group 3 the apatite nucleation on substrate surface. The Group 4 shows unorganized and vertically nanotubes and Group 5 shows a little alteration in the topography on the substrate surfaces. Overall the contact angle shows Group 5 the most hydrophobic and Group 4 the most hydrophilic. The study indicates Group 3 and 4 with potential for biomedical application. The next step the authors need to spend more time to study group 3 and 4 in the biomedical sciences.展开更多
In the time of Internet of Things(IoT),alternating current electroluminescence(ACEL)has unique advantages in the fields of smart display and human–computer interaction.However,their reliance on external high-voltage ...In the time of Internet of Things(IoT),alternating current electroluminescence(ACEL)has unique advantages in the fields of smart display and human–computer interaction.However,their reliance on external high-voltage AC power supplies poses challenges in terms of wearability and limits their practical application.This paper proposed an innovative scheme for preparing a feather triboelectric nanogenerator(F-TENG)using recyclable and environmentally friendly material.The highest open-circuit voltage,short-circuit current,and transferred charge of SF6-treated F-TENGs can reach 449 V,63μA,and 152 nC,which enables easy lighting of BaTiO_(3)^(-)doped ACEL devices.Using a human electrical potential,a single-electrode F-TENG is combined with ACEL device for self-powered fingerprint recognition display.These works achieve self-powered flexible wearable ACEL devices,which are not only efficient and portable but also have good application prospects in the human–computer interaction,functional displays,and wearable electronic devices.展开更多
Based on an advanced technology, randomly-aligned subwavelength structures(SWSs) were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride...Based on an advanced technology, randomly-aligned subwavelength structures(SWSs) were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride(mainly ferrous-fluoride) nanodots induce and gather stable fluorocarbon polymer etching inhibitors in the reactive-ion-etching polymers as masks. Metal fluoride(mainly ferrous fluoride) is produced by the sputtering of argon plasma and the ion-enhanced chemical reaction of metal atoms. With an increase in CHF_3/Ar gas flow ratio, the average height of the SWSs increases, the number of SWSs per specific area increases and then decreases, and the optical transmittance of visible light increases and then decreases. The optimum CHF_3/Ar gas flow ratio for preparing SWSs is 1:5.展开更多
Three sample preparation techniques, focused ion beam (FIB), ion beam (IB) etching, and ultramicrotomy (UM) were used in comparison to analyze the interphase of carbon fiber 'epoxy composites using transmission...Three sample preparation techniques, focused ion beam (FIB), ion beam (IB) etching, and ultramicrotomy (UM) were used in comparison to analyze the interphase of carbon fiber 'epoxy composites using transmission electron microscopy. An intact interphase with a relatively uniform thickness was obtained by FIB. and detailed chemical analysis of the interphase was investigated by electron energy loss spectroscopy. It shows that the interphase region is 200 mn wide with an increasing oxygen-to-carbon ratio from 10% to 19% and an almost constant nitrogen-to-carbon ratio of about 3%. However, gallium implantation of FIB tends to hinder fine structure analysis of the interphase. For IB etching, the interphase region is observed with transition morphology frona amorphous resin to nano-crystalline carbon fiber, but the uneven sample thickness brings difficulty for quantitative chemical analysis. Moreover, UM tends to cause damage and/or deformation on the interphase. These results are meaningful for in-depth understanding on the interphase characteristic of carbon fiber composites.展开更多
Corrugated silicon nanocone(SiNC)arrays have been fabricated on a silicon wafer by two polystyrene-sphere-monolayer-masked etching steps in order to create high-performance antireflective coatings.The reflectance was ...Corrugated silicon nanocone(SiNC)arrays have been fabricated on a silicon wafer by two polystyrene-sphere-monolayer-masked etching steps in order to create high-performance antireflective coatings.The reflectance was reduced from above 35%to less than 0.7%in the range 400-1050 nm,and it remained below 0.5%at incidence angles up to 70°at 632.8 nm for both s-and p-polarized light.The fluorinated corrugated SiNC array surface exhibits superhydrophobic properties with a water contact angle of 164°.展开更多
A silicon pressure sensor is one of the very first MEMS components appearing in the microsystem area.The market for the MEMS pressure sensor is rapidly growing due to consumer electronic applications in recent years. ...A silicon pressure sensor is one of the very first MEMS components appearing in the microsystem area.The market for the MEMS pressure sensor is rapidly growing due to consumer electronic applications in recent years. Requirements of the pressure sensors with low cost, low power consumption and high accuracy drive one to develop a novel technology. This paper first overviews the historical development of the absolute pressure sensor briefly. It then reviews the state of the art technology for fabricating crystalline silicon membranes over sealed cavities by using the silicon migration technology in detail. By using only one lithographic step, the membranes defined in lateral and vertical dimensions can be realized by the technology. Finally, applications of MEMS through using the silicon migration technology are summarized.展开更多
The fabrication of bit-patterned media (BPM) is crucial for new types of hard disk drives. The development of methods for the production of BPM is progressing rapidly. Conventional lithography reaches the limit rega...The fabrication of bit-patterned media (BPM) is crucial for new types of hard disk drives. The development of methods for the production of BPM is progressing rapidly. Conventional lithography reaches the limit regarding lateral resolution, and new routes are needed. In this study, we mainly focus on the dependence of the size and shape of magnetic nanodots on the Ar+-ion etching duration, using silica dots as masks. Two-dimensional (2D) arrays of magnetic nanostructures are created using silica-filled diblock-copolymer micelles as templates. After the self-assembly of the micelles into 2D hexagonal arrays, the polymer shell is removed, and the SiO2 cores are utilized to transform the morphology into a (Co/Pt)2-multilayer via ion etching under normal incidence. The number of preparation steps is kept as low as possible to simplify the formation of the nanostructure arrays. High-resolution in situ grazing-incidence small-angle X-ray scattering (GISAXS) investigations are performed during the Ar+-ion etching to monitor and control the fabrication process. The in situ investigation provides information on how the etching conditions can be improved for further ex situ experiments. The GISAXS patterns are compared with simulations. We observe that the dots change in shape from cylindrical to conical during the etching process. The magnetic behavior is studied by utilizing the magneto-optic Kerr effect. The Co/Pt dots exhibit different magnetic behaviors depending on their size, interparticle distance, and etching time. They show ferromagnetism with an easy axis of magnetization perpendicular to the film. A systematic dependence of the coercivitv on the dot size is observed.展开更多
The silica microdisk optical resonator which exhibits whispering-gallery-type modes with quality factors of 9.67 x 104 is fabricated with photolithographic techniques. Reactive ion beam etching (RIBE) is used to get...The silica microdisk optical resonator which exhibits whispering-gallery-type modes with quality factors of 9.67 x 104 is fabricated with photolithographic techniques. Reactive ion beam etching (RIBE) is used to get the silica disks with photoresist masks on SiO2/Si made by standard ultraviolet (UV) photolithography, and spontaneous silicon etching by XeF2 is used to fabricate the silicon micropillars. This fabrication process can control the microcavity geometry, leading to high experiment repeatability and controllable cavity modes. These characteristics are important for many applications in which the microcavity is necessary, such as the auantum gate.展开更多
We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography(EBL) and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the...We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography(EBL) and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the highly sensitive chemically amplified resist(CAR),NEB-22,with negative tone was used.The EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching(RIE) on the SiNx to form the desired templates.The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask.Nevertheless,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106)
文摘Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors (HEMTs) quantitatively. For the non-recessed HEMT, the trap state density decreases from 2.48 × 1013 cm-2.eV-1 at an energy of 0.29 eV to 2.79 × 1012 cm-2.eV-1 at ET = 0.33 eV. In contrast, the trap state density of 2.38 × 1013-1.10× 1014 cm-2.eV-1 is located at ET in a range of 0.30-0.33 eV for the recessed HEMT. Thus, lots of trap states with shallow energy levels are induced by the gate recess etching. The induced shallow trap states can be changed into deep trap states by 350 ℃ annealing process. As a result, there are two different types of trap sates, fast and slow, in the annealed HEMT. The parameters of the annealed HEMT are ET = 0.29-0.31 eV and DT = 8.16× 1012-5.58 × 1013 cm-2.eV-1 for the fast trap states, and ET = 0.37-0.45 eV and DT = 1.84×1013- 8.50 × 1013 cm-2.eV-1 for the slow trap states. The gate leakage currents are changed by the etching and following annealing process, and this change can be explained by the analysis of the trap states.
文摘A method for etching the surface of a Pyrex glass substrate using the Reactive Ion Etching process without the use of masks is reported. Variations in the machined surface on an auxiliary plate, manufactured in aluminum and placed below a Pyrex glass slide, were transferred to the upper surface of the substrate. SF6 as etching gas and low pressure chamber to promote the increase of mean free path of ions were used. Two etching ratios were found, general, that affects the entire surface of the substrate, and differential, which generates the relief on the surface of the glass. Differential etching depth showed a linear behavior with respect to time;the mean differential etching rate obtained was 43 nm/min. The same phase between the auxiliary plate machining and the etched pattern on the substrate is preserved. With this technique it was possible to manufacture convex and concave surfaces;some examples are given. The arithmetic mean roughness achieved with the proposed method was found to be N1 class, ideal for the development of optical corrector plates.
文摘With the support by the National Natural Science Foundation of China,a collaboration by the research groups led by Prof.Cheng Gang(程纲)from Henan University and Prof.Wang Zhonglin(王中林)from Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,invents'a sliding-mode triboelectric nanogenerator with chemical group grated structure by shadow mask reactive ion etching',which was published in ACS Nano(2017,11(9):8796-8803).
文摘GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D-A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D-A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D-A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.
基金supported by National Natural Science Foundation of China(No.60908023)the Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials of China(No.Ilzxfkl9)
文摘Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching(including isotropic-etching and anisotropic-etching) have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.
基金supported by National Key Basic Research Program of China(Nos.2010CB934300,2011CBA00607,2011CB9328004)the National Integrate Circuit Research Program of China(No.2009ZX02023-003)+2 种基金the National Natural Science Foundation of China(Nos. 60906004,60906003,61006087,61076121,61176122,61106001)the Science and Technology Council of Shanghai(Nos.11DZ2261000, 11QA1407800)the Chinese Academy of Sciences(No.20110490761)
文摘Phase change random access memory (PCRAM) is one of the best candidates for next generation non- volatile memory, and phase change SiESbETe5 material is expected to be a promising material for PCRAM. In the fabrication of phase change random access memories, the etching process is a critical step. In this paper, the etching characteristics of Si2Sb2Te5 films were studied with a CF4/Ar gas mixture using a reactive ion etching system. We observed a monotonic decrease in etch rate with decreasing CF4 concentration, meanwhile, Ar concentration went up and smoother etched surfaces were obtained. It proves that CF4 determines the etch rate while Ar plays an im- portant role in defining the smoothness of the etched surface and sidewall edge acuity. Compared with GeESbETe5, it is found that Si2Sb2Te5 has a greater etch rate. Etching characteristics of Si2SbETe5 as a function of power and pressure were also studied. The smoothest surfaces and most vertical sidewalls were achieved using a CF4/Ar gas mixture ratio of 10/40, a background pressure of 40 mTorr, and power of 200 W.
基金supported by the National Natural Science Foundation of China(No.61078039)
文摘Reactive ion etching(RIE) of LiNbO_3(LN) in SF_6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid with a chromium film mask that has a Mach-Zehnder interferometer(MZI) array pattern.The experimental results indicate that the LN-etching rate(R_(LN)) and the Cr-etching rate(R_(Cr)) as well as the rate ratio R_(LN)/R_(Cr) increase with either increasing the radio-frequency(RF) power at a given SF_6 flow rate or increasing the SF_6 flow rate at a fixed RF power.The maximum values of R_(LN) = 43.2 nm/min and R_(LN)/R_(Cr) = 3.27 were achieved with 300 W RF power and 40 sccm SF_6 flow.When the SF_6 flow rate exceeds 40 sccm,an increase in the flow rate causes the etching rates and the rate ratio to decrease.The scanning electron microscope images of the LN ridge prepared after~20 min etching show that the ridge height is 680 nm and the sidewall slope angle is about 60°.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61575129 and 11375105the Postdoctoral Science Foundation of China under Grant No 2016M602511+1 种基金the Shenzhen Science and Technology Planning under Grant No JCYJ20160422142912923the State Key Laboratory of Nuclear Physics and Technology,Peking University
文摘We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths (around 800hm). The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti:sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm (at -30 dB points), from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.
基金Supported by National Natural Science Foundation of China (No.10975154)State Key Lab of Electroanalytical Chemistry,Changchun Institute of Applied Chemistry,CAS (SKLEA 201104)
文摘[Objective] The aim was to study the mechanism of the removal effect of methylene blue(MB) by rice husk ash(RHA).[Method] The effects of contact time and pH on the adsorption of MB by rice husk ash were investigated,and the mechanism was discussed.[Result] RHA exhibited a remarkable ability on the adsorption of MB.The process of adsorption reached the equilibrium after 30 min,at about pH 9.The adsorption effect was explored with the aid of ion beam etching technique,which displayed that there were two main adsorption manners.One was the electrostatic interactions,through which the negatively charged RHA could adsorb the positively charged MB,the other was the porous effect due to the huge specific surface area of the micro/nano-scale porous silica in RHA,and MB could be adsorbed and deposited into the pores.[Conclusion] RHA could be used in the treatment of textile wastewater.Ion beam technology might be used as an effective way to investigate the adsorption effect.
基金This work was supported by KIST(Korea Institute of Science and Technology)institutional grants(2E30965,and 2V07360)the National R&D Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(Nos.2020R1C1C1006065,2021M3F3A2A01037366)+1 种基金This work was also supported by the Korea Medical Device Development Fund grant funded by the Korea government(the Ministry of Science and ICT,the Ministry of Trade,Industry and Energy,the Ministry of Health&Welfarethe Ministry of Food and Drug Safety)(Project Number:9991006818,KMDF_PR_20200901_0145-2021).
文摘Out-of-plane microneedle structures are widely used in various applications such as transcutaneous drug delivery and neural signal recording for brain machine interface.This work presents a novel but simple method to fabricate high-density silicon(Si)microneedle arrays with various heights and diverse cross-sectional shapes depending on photomask pattern designs.The proposed fabrication method is composed of a single photolithography and two subsequent deep reactive ion etching(DRIE)steps.First,a photoresist layer was patterned on a Si substrate to define areas to be etched,which will eventually determine the final location and shape of each individual microneedle.Then,the 1st DRIE step created deep trenches with a highly anisotropic etching of the Si substrate.Subsequently,the photoresist was removed for more isotropic etching;the 2nd DRIE isolated and sharpened microneedles from the predefined trench structures.Depending on diverse photomask designs,the 2nd DRIE formed arrays of microneedles that have various height distributions,as well as diverse cross-sectional shapes across the substrate.With these simple steps,high-aspect ratio microneedles were created in the high density of up to 625 microneedles mm^(-2)on a Si wafer.Insertion tests showed a small force as low as~172μN/microneedle is required for microneedle arrays to penetrate the dura mater of a mouse brain.To demonstrate a feasibility of drug delivery application,we also implemented silk microneedle arrays using molding processes.The fabrication method of the present study is expected to be broadly applicable to create microneedle structures for drug delivery,neuroprosthetic devices,and so on.
基金funding from Marie Curie Actions under EU FP7 Initial Training Network SNAL 608184
文摘One of the major challenges faced by the biomedical industry is the development of robust synthetic surfaces that can resist bacterial colonization. Much inspiration has been drawn recently from naturally occurring mechano-bactericidal surfaces such as the wings of cicada(Psaltoda claripennis) and dragonfly(Diplacodes bipunctata) species in fabricating their synthetic analogs. However,the bactericidal activity of nanostructured surfaces is observed in a particular range of parameters reflecting the geometry of nanostructures and surface wettability. Here,several of the nanometer-scale characteristics of black silicon(bSi) surfaces including the density and height of the nanopillars that have the potential to influence the bactericidal efficiency of these nanostructured surfaces have been investigated. The results provide important evidence that minor variations in the nanoarchitecture of substrata can substantially alter their performance as bactericidal surfaces.
基金Brazilian agencies CNPq via grant Doctored sandwich (201271/2010-9) Fapesp project number 2010/ 10174-8 and 2010/07231-0
文摘Titanium and titanium alloys are currently being used for clinical biomedical applications due to their high strength, corrosion resistance and elastic modulus. The Ti-30Ta alloy has gotten extensive application as the important biomedical materials. The substrate surface of the Ti-30Ta alloy was altered either by chemical or topographical surface modification. The biocompatibility of an implant is closely related to its surface properties. Thus surface modification is one of effective methods for improving the biocompatibility of implants. The development status of biomedical materials has been summarized firstly, the biomedical application. In this study Ti-30Ta alloy surface was investigate as-casting (Group 1) modified with alkaline and heat-treatments in NaOH with 1.5M at 60°C for 24 hrs (Group 2), alkaline and heat-treatments with SBF-coatings by immersion in NaOH and SBFX5 for 24hrs (Group 3), anodization process was performed in an electrolyte solution containing HF (48%) and H2SO4 (98%) with the addition of 5% dimethyl sulfoxide (DMSO) 35V for 40 min (Group 4) and ion beam etching with 1200 eV ions with a beam current of 200 mA for a 3 hrs etch (Group 5). SEM was used to investigate the topography, EDS the chemical composition, and surface energy was evaluate with water contact angle measurement. SEM results show different structure on the surface for each group. EDS spectra identified similarity on Group 1, 4 and 5. The results indicate for group 2 an amorphous sodium tantalate hydrogel layer on the substrate surface and for group 3 the apatite nucleation on substrate surface. The Group 4 shows unorganized and vertically nanotubes and Group 5 shows a little alteration in the topography on the substrate surfaces. Overall the contact angle shows Group 5 the most hydrophobic and Group 4 the most hydrophilic. The study indicates Group 3 and 4 with potential for biomedical application. The next step the authors need to spend more time to study group 3 and 4 in the biomedical sciences.
基金supported by the National Key Research and Development Program of China(No.2021YFB3600402)the National Natural Science Foundation of China(No.62004039)+1 种基金Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(Nos.2020ZZ111 and 2020ZZ113)the National Natural Science Foundation of Fujian Province,China(No.2021J01577).
文摘In the time of Internet of Things(IoT),alternating current electroluminescence(ACEL)has unique advantages in the fields of smart display and human–computer interaction.However,their reliance on external high-voltage AC power supplies poses challenges in terms of wearability and limits their practical application.This paper proposed an innovative scheme for preparing a feather triboelectric nanogenerator(F-TENG)using recyclable and environmentally friendly material.The highest open-circuit voltage,short-circuit current,and transferred charge of SF6-treated F-TENGs can reach 449 V,63μA,and 152 nC,which enables easy lighting of BaTiO_(3)^(-)doped ACEL devices.Using a human electrical potential,a single-electrode F-TENG is combined with ACEL device for self-powered fingerprint recognition display.These works achieve self-powered flexible wearable ACEL devices,which are not only efficient and portable but also have good application prospects in the human–computer interaction,functional displays,and wearable electronic devices.
基金Funded by the National Natural Science Foundation of China(Nos.61705204 and 51606158)the Laser Fusion Research Center Funds for Young Talents(No.LFRC-PD011)
文摘Based on an advanced technology, randomly-aligned subwavelength structures(SWSs) were obtained by a metal-nanodot-induced one-step self-masking reactive-ion-etching process on a fused silica surface. Metal-fluoride(mainly ferrous-fluoride) nanodots induce and gather stable fluorocarbon polymer etching inhibitors in the reactive-ion-etching polymers as masks. Metal fluoride(mainly ferrous fluoride) is produced by the sputtering of argon plasma and the ion-enhanced chemical reaction of metal atoms. With an increase in CHF_3/Ar gas flow ratio, the average height of the SWSs increases, the number of SWSs per specific area increases and then decreases, and the optical transmittance of visible light increases and then decreases. The optimum CHF_3/Ar gas flow ratio for preparing SWSs is 1:5.
基金supported by the National Natural Science Foundation of China (Grant No. 51273007)the Program for New Century Excellent Talents in University of China (NCET)
文摘Three sample preparation techniques, focused ion beam (FIB), ion beam (IB) etching, and ultramicrotomy (UM) were used in comparison to analyze the interphase of carbon fiber 'epoxy composites using transmission electron microscopy. An intact interphase with a relatively uniform thickness was obtained by FIB. and detailed chemical analysis of the interphase was investigated by electron energy loss spectroscopy. It shows that the interphase region is 200 mn wide with an increasing oxygen-to-carbon ratio from 10% to 19% and an almost constant nitrogen-to-carbon ratio of about 3%. However, gallium implantation of FIB tends to hinder fine structure analysis of the interphase. For IB etching, the interphase region is observed with transition morphology frona amorphous resin to nano-crystalline carbon fiber, but the uneven sample thickness brings difficulty for quantitative chemical analysis. Moreover, UM tends to cause damage and/or deformation on the interphase. These results are meaningful for in-depth understanding on the interphase characteristic of carbon fiber composites.
基金This work was supported by the National Natural Science Foundation of China(No.20373019)the Program for New Century Excellent Talents in University,and the National Basic Research Program(Nos.2007CB808003 and 2009CB939701).
文摘Corrugated silicon nanocone(SiNC)arrays have been fabricated on a silicon wafer by two polystyrene-sphere-monolayer-masked etching steps in order to create high-performance antireflective coatings.The reflectance was reduced from above 35%to less than 0.7%in the range 400-1050 nm,and it remained below 0.5%at incidence angles up to 70°at 632.8 nm for both s-and p-polarized light.The fluorinated corrugated SiNC array surface exhibits superhydrophobic properties with a water contact angle of 164°.
基金Project supported by the National Major Science&Technology Program of China(No.2011ZX02507-001)
文摘A silicon pressure sensor is one of the very first MEMS components appearing in the microsystem area.The market for the MEMS pressure sensor is rapidly growing due to consumer electronic applications in recent years. Requirements of the pressure sensors with low cost, low power consumption and high accuracy drive one to develop a novel technology. This paper first overviews the historical development of the absolute pressure sensor briefly. It then reviews the state of the art technology for fabricating crystalline silicon membranes over sealed cavities by using the silicon migration technology in detail. By using only one lithographic step, the membranes defined in lateral and vertical dimensions can be realized by the technology. Finally, applications of MEMS through using the silicon migration technology are summarized.
文摘The fabrication of bit-patterned media (BPM) is crucial for new types of hard disk drives. The development of methods for the production of BPM is progressing rapidly. Conventional lithography reaches the limit regarding lateral resolution, and new routes are needed. In this study, we mainly focus on the dependence of the size and shape of magnetic nanodots on the Ar+-ion etching duration, using silica dots as masks. Two-dimensional (2D) arrays of magnetic nanostructures are created using silica-filled diblock-copolymer micelles as templates. After the self-assembly of the micelles into 2D hexagonal arrays, the polymer shell is removed, and the SiO2 cores are utilized to transform the morphology into a (Co/Pt)2-multilayer via ion etching under normal incidence. The number of preparation steps is kept as low as possible to simplify the formation of the nanostructure arrays. High-resolution in situ grazing-incidence small-angle X-ray scattering (GISAXS) investigations are performed during the Ar+-ion etching to monitor and control the fabrication process. The in situ investigation provides information on how the etching conditions can be improved for further ex situ experiments. The GISAXS patterns are compared with simulations. We observe that the dots change in shape from cylindrical to conical during the etching process. The magnetic behavior is studied by utilizing the magneto-optic Kerr effect. The Co/Pt dots exhibit different magnetic behaviors depending on their size, interparticle distance, and etching time. They show ferromagnetism with an easy axis of magnetization perpendicular to the film. A systematic dependence of the coercivitv on the dot size is observed.
基金This work was supported by the National Natu-ral Science Foundation of China(No.60537020 and60121503)the Science and Technology Ministry of China(No.2006CB921900)the Knowledge Innovation Program of the Chinese Academy of Sciences.
文摘The silica microdisk optical resonator which exhibits whispering-gallery-type modes with quality factors of 9.67 x 104 is fabricated with photolithographic techniques. Reactive ion beam etching (RIBE) is used to get the silica disks with photoresist masks on SiO2/Si made by standard ultraviolet (UV) photolithography, and spontaneous silicon etching by XeF2 is used to fabricate the silicon micropillars. This fabrication process can control the microcavity geometry, leading to high experiment repeatability and controllable cavity modes. These characteristics are important for many applications in which the microcavity is necessary, such as the auantum gate.
基金supported by the National High Technology Research and Development Program of China(No.2006AA03Z352)the Science and Technology Commission of Shanghai (No. 08QH14002)+1 种基金the Seed Funding for Key Project by Ministry of Educationthe '985'Micro/Nanoelectronics Science and Technology Innovation Platform
文摘We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography(EBL) and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the highly sensitive chemically amplified resist(CAR),NEB-22,with negative tone was used.The EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching(RIE) on the SiNx to form the desired templates.The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask.Nevertheless,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.