High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.

Phenotype Observation and Variation Analysis of F_2 Generation of Ion Implanted Chili Pepper Seeds

[Objective]The aim was to investigate inheritance of the mutagenic properties caused by ion implantation from F1 to F2 generation in chili pepper.[Method]Chili pepper seeds were implanted with different ion combinations at different doses,and the F1 generation seeds of five groups in which biological mutation occurred were selected to sow in the field.Then the main phenotype changes in F2 generation were observed,the biochemical changes caused by ion implantation were analyzed by determination of peroxidase isozyme.[Result]Seed implanted with 9×1011 P2＋/cm2 and 1×1012 Cu2＋/cm2（No.21）on its both sides could maintain the superiority in yield per plant to F2 generation,while the mutagenic effects of F1 generation in other groups were not inherited by the F2 generation.[Conclusion]The prominent biological characters induced in the seeds of group No.21 were relatively inherited,so the seeds were worth further breeding.

Load Dependence of Nanohardness in Nitrogen Ion Implanted Ti6Al4V Alloy and Fractal Characterization

Three different nitrogen ion doses were implanted into a Ti6A14V alloy to improve its mechanical surface properties for the application of artificial joints. The titanium nitride phase and nitrogen element distribution profile were characterized with X-ray photoelectron spectroscopy （XPS）. Nano-indentation tests were carried out on the surface of the Ti6A14V alloy and implanted samples on a large scale of applied loads. The XPS analysis results indicate that nitrogen diffuses into the titanium alloy and forms a hard TiN layer on the Ti6A14V alloy. The nanohardness results reveal that nitrogen ion implantation effectively enhances the surface hardness of Ti6A14V. In addition, the nanohardness clearly reveals load dependence over a large segment of the applied loads. Thus a concept of nanohardness fractal dimension is first proposed and the dual fractal model can effectively describe nonlinear deformation in indentation areas on the Ti6A14V surface. The fractal dimension shows a decreased trend in two regions of applied loads, indicating a decrease of the self-similarity complexity in surface indentation owing to an increase in nanohardness after nitrogen ion implantation.

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

An experimental study on the photocarrier radiometry signals of As^＋ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose （1×10^11-1×10^16/cm^2）, implantation energy （20-140 keV） and subsequent isochronical annealing temperature （500- 1100℃ are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Low frequency noise behaviors of partially depleted silicon-on-insulator(PDSOI) n-channel metal-oxide semiconductors(MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10V2·Hz-1and 2.7×10-8V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017cm-3·e V-1to 6.16×1018cm-3·e V-1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10-5to 1.34×10-2after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

Composition and Structure of Ti-6Al-4V Alloy Plasma-based Ion Implanted with Nitrogen

The composition and structure of Ti 6Al 4V alloy plasma based ion implanted with nitrogen was investigated.The nitrogen depth distribution shows more antiballistic with distribution peak heightened with increased implantation time(dose),and more like a parabola at the low implantation pulse voltage.When implantation pulse voltage is increased,the implantation depth increased with the nitrogen distribution peak being deepened,widened and lowered somewhat.TiN,TiN+Ti 2N,or Ti 2N second phases were formed in the implanted layer.The relative percentage of nitrogen content in the form of TiN increases when going deeper into the implanted(TiN formed) layer.The increase of implantation pulse width and/or time is favourable for the formation of TiN rather than Ti 2N.It is unfavourable for formation of any nitrides when implantation pulse voltage is decreased to 30kV or less.Tiny crystalline particles (made mainly of Ti 2N and a smaller percentage of TiO 2 phases) of regular shapes such as triangle and tetragon, etc .(about 20 nm) are found distrbuted dispersively in the near surface region of samples implanted at the high implantation pulse voltage (75kV).

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implar, tation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results.

SURFACE ANALYSES OF NITROGEN ION IMPLANTED Ti6Ai4V ALLOY

The techniques for surface analysis including AES,XPS and SIMS were employed to study the chemical composition and bond valence of nitrogen ion implanted surface of surgical implantation service alloy Ti6Al4V.The depth of implanted nitrogen ions and the sputtering rate of argon beams were determined using a profilometer.It was found that the combination of injected nitrogen ions with titanium resulted in the formation of hard TiN particles and the profile of nitrogen concentration approximately displayed gaussian distribution.The total depth of implanted nitrogen is about 350 nm and its maximum concentration appears in the depth of about 140 nm from the surface,in which the concentration ratio of nitrogen to titanium may be up to 1.1.

Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs

A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.

Planar nucleation and crystallization in the annealing process of ion implanted silicon

According to thermodynamic and kinetic theory,considering the variation of bulk free energy and superficial energy after nucleation as well as the migration of atoms,we study systematically the planar nucleation and crystallization that relate to two possible transition mechanisms in the annealing process of ion implanted S i：（1） liquid/solid transition：the critical nucleation work is equal to half the increased superficial energy and inversely proportional to the supercoolingΔT.Compared with bulk nucleation,the radius of the critical nucleus decreases by half,and the nucleation rate attains its maximum at T = Tm/2.（2） amorphous/crystalline transition：the atoms contained in the critical nucleus and situated on its surface,as well as critical nucleation work,are all directly proportional to the height of the nucleus,and the nucleation barrier is equal to half the superficial energy too.In addition,we take SiGe semiconductor as a specific example for calculation;a value of 0.03 eV/atom is obtained for the elastic strain energy,and a more reasonable result can be gotten after taking into account its effect on transition Finally,we reach the following conclusion as a result of the calculation：for the annealing of ion implanted Si,no matter what the transition method is—liquid or solid planar nucleation—the recrystallization process is actually carried out layer by layer on the crystal substrate,and the probability of forming a＂rod-like＂nucleus is much larger than that of a＂plate-like＂nucleus.

Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC

The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- served after 1650℃ annealing. Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region. The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method. A specific contact resistance as low as 4.4 × 10^-3Ω · cmA^2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2 X-ray diffraction analysis shows the formation of Ni2 Si and graphite phase at the interface after annealing. This provides the evidence that the car- bon vacancies,resulting from the out-diffusion of carbon atoms from SiC, contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.

Surface characteristics,corrosion behavior,and antibacterial property of Ag-implanted NiTi alloy

NiTi shape memory alloy was modified by Ag ion implantation with different incident doses to improve its antibacterial property. The atomic force microscopy, auger electron spectroscopy, and X-ray photoelectron spectroscopy show that the surface of NiTi alloy is covered by TiO2 nano-film with embedded pure Ag with a peak concentration of 5.0 at% at the incident dose of 1.5 x10^17 ions.cm-a, and Ni concentration is reduced in the super- ficial surface layer. The surface roughness reaches the maximum value nearly twice higher than the control sample at the incident dose of 1.5x10^17 ions.cm-2. The potentiodynamic anodic polarization curves show that the Ag-implanted NiTi samples possess higher self-corrosion potential （Ecorr） and lower self-corrosion current density （icor0 but lower breakdown potential （Ebr）. Therefore, the corrosion resistance of the Ag-NiTi is comparable to, if not better than, the untreated NiTi. The antibacterial tests reveal that there is a distinct reduction of the germ numbers on the Ag-NiTi, which is due to the direct contact between Ag and germ, and enhanced by the leaching Ag ions.

Antibacterial properties and corrosion resistance of AISI 420 stainless steels implanted by silver and copper ions

Silver or copper ions are often chosen as antibacterial agents. But a few reports are concerned with these two antibacterial agents for preparation of antibacterial stainless steel （SS）. The antibacterial properties and corrosion resistance of AISI 420 stainless steel implanted by silver and copper ions were investigated. Due to the cooperative antibacterial effect of silver and copper ions, the Ag/Cu implanted SS showed excellent antibacterial activities against both Gram-negative Escherichia coli （E. coli） and Gram-positive Staphylococcus aureus （S. aureus） at a total implantation dose of 2~ 1017 ions/cm2. Electrochemical polarization curves revealed that the corrosion resistance of Ag/Cu implanted SS was slightly enhanced as compared with that of un-implanted SS, The implanted layer was characterized by X-ray photoelec- tron spectroscopy （XPS）. Core level XPS spectra indicate that the implanted silver and copper ions exist in metallic state in the implanted layer.

Surface Carbon Chemical States of Ion Implanted AISI 440C Martensitic Stainless Steel

Carbon atoms segregate in the surface region for polished AISI 440C stainless steel After ion implanta tion, the surface carbon atoms exist in different forms. To elucidate their existence, surface structures and carbon chemical states o[ unimplanted, N~ implanted, Ti＋ implanted and N＋/Ti＋ co-implanted samples were analyzed by X-ray diffraction （XRD）, transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）. The results indicated that various phases form in the surface or subsurface region after ion implantation, while the surface topography of the samples remains intact. For polished unimplanted sample, besides some Fe3 C phase and C- C phase, Cr, Cs phase dominates its surface region. Little change of carbon chemical states occurs after N＋ ion im- plantation. For Ti＋ implanted sample, besides some metal oxycarbide phases, most carbon amorphous phases form in surface region. Concerning N＋/Ti＋ co-implantation, CrrCs compound as well as Fe^C phase dominates the sur face region while no C-C phase is found. In addition, compared with single ion implantation, N＋/Ti＋ co-implanta tion would increase the ion implantation depth significantly. The formed phases of the carbon atoms play an impor- tant role in affecting the surface properties of AISI 440C stainless steel.

Effect of thermal oxidation on the surface characteristics and corrosion behavior of a Ta-implanted Ti-50.6Ni shape memory alloy

A NiTi shape memory alloy （SMA） modified by Ta ion implantation was subjected to oxidation treatment in air at 723 and 873 K. Atomic force microscopy （AFM）, Auger electron spectroscopy （AES）, and grazing incidence X-ray diffraction （GIXRD） measurements were conducted to investigate the surface characteristics, including surface topography, elemental depth profiles, and surface phase structures. The surface roughness of the Ta-implanted NiTi increases after oxidation, and the higher the oxidation temperature is, the larger the value is. The surface of the Ta-implanted NiTi oxidized at 723 K is a nanolayer mainly composed of TiO2/Ta2O5 and TiO with depressed Ni content. The Ta-implanted NiTi oxidized at 873 K is mainly covered by rutile TiO2 in several micrometers of thickness. Potentiodynamic polarization tests indicated that the corrosion resistance of the Ta-implanted NiTi was improved after thermal oxidation at 723 K, but a negative impact was found for the Ta-implanted NiTi oxidized at 873 K.

Residual Stress Measurement for Ion-implanted NiTi Alloy by Using Moiré Interferometry and Hole-drilling Combined Method

Residual stresses in ion-implanted NiTi alloy are measured by a combined method ofMoir6 interferometry and hole-drilling. Oxygen ions are implanted into the NiTi alloy under a voltage of 30 kV by a dose of 1.0×10^17ions/cm^2 for one hour. Subsequently, in order to avoid dimensional error, a hole is drilled exactly in the center of the sample. The distribution of residual stresses around the hole is measured. It is indicated that the method which combines the Moire interferometry with hole-drilling is able to be used to measure residual stresses produced by ion implantation.

Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃annealing

A nano-twinned microstructure was found in amorphous SiC after high-temperature annealing.Grazing incidence x-ray diffraction,high-resolution transmission electron microscopy,and electron diffraction were performed to characterize the microstructure and phase transition in the recrystallization layer.After 1500℃or 2-h annealing,3C-SiC grains and numerous stacking faults on the{111}planes were visible.Some 3C-SiC grains have nano-twinned structure with{011}planes.Between the nano-twinned 3C-SiC grains,there is a stacking fault,indicating that the formation mechanisms of the nano-twinned structure are related to the disorder of Si atoms.The increase in the twin thickness with increasing annealing temperature demonstrates that the nano-twinned structure can sink for lattice defects,in order to improve the radiation tolerance of SiC.

THERMAL NUCLEATION AND GROWTH OF He BUBBLES IN He IMPLANTED STAINLESS STEELS

Nucleation and growth of He bubbles at different annealing temperatures T≤1023 K in stain- less steels HR-2 and SS321,implanted with He^+(40-70 keV.1×10^(16)-6× 10^(17) He^+/cm^2),were ohserved under TEM.T=0.45T_m seems to be a transition temperature.The He bubbles continue mainly their nucleation at 0.3T_m< T<0.45T_m,and grow predominantly at T≥0.45T_m,due probably to migration and coalescence by surface diffusion of metal atoms around the bubbles.The apparent activation energies for the growth are found to he 0.41 and 0.31 eV for HR-2 and SS321 respectively.The bubble density in HR-2 is greater than that in SS321 within whole measuring temperature range,and the onset temperature of rapid swelling is also higher.It is believed that the resistance of HR-2 to He is superior to that fo SS321.

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Ge^＋ ions are implanted into fused silica glass at room temperature and a fluence of 1 × 10^17 cm^-2. The as-implanted samples are annealed in O2, N2 and Ar atmospheres separately. Ge^0, GeO and GeO2 coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600℃ leads each composite to change its content. After annealing at 1000℃, there remains some amount of Ge^0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N2, Si N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O2 atmosphere, and a new absorption peak occurs at 418 nm after annealing in N2 atmosphere, which is attributed to the Si N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO2 nanoparticles in the annealed sample. In the present study, the GeO content and the GeO2 content depend on annealing temperature and atmosphere. Three photolumineseence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700℃ and their photoluminescences recover to the values of as-grown samples after annealing at 700℃. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.

Determination of activation energy of ion-implanted deuterium release from W–Y2O3

The retention and release of deuterium in W–2%Y2O3 composite materials and commercially pure tungsten after they have been implanted by deuterium plasma(flux ~ 3.71 × 1021 D/m2·s, energy ~ 25 eV, and fluence up to 1.3 × 1026D/m2)are studied. The results show that the total amount of deuterium released from W–2%Y2O3 is 5.23 × 1020 D/m2(2.5 K/min),about 2.5 times higher than that from the pure tungsten. Thermal desorption spectra(TDS) at different heating rates(2.5 K/min–20 K/min) reveal that both W and W–2%Y2O3 have two main deuterium trapped sites. For the low temperature trap, the deuterium desorption activation energy is 0.85 eV(grain boundary) in W, while for high temperature trap, the desorption activation energy is 1.57 eV(vacancy) in W and 1.73 eV(vacancy) in W–2%Y2O3.