Effects of the ion-beam voltage on the properties of the diamond-like carbon thin film prepared by ion-beam sputtering deposition

Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy （AFM）, Raman spectroscopy, nanoindentation, and Fourier transform infrared （FTIR） spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases.

Surface Metallization of Glass Fiber(GF)/Polyetheretherketone(PEEK) Composite with Cu Coatings Deposited by Magnetron Sputtering and Electroplating

Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)

This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.

High Permeability in Broadband of Co-sputtered [Fe-Fe_(20)Ni_(80)/Cr]_(n) Multilayer Films

To achieve high microwave permeability in wide-band for the micron-thick magnetic films,[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer structure was proposed by co-sputtering Fe and FeNi to form the magnetic layers and Cr to form the interlayers.The multilayer structure contributes to the high permeability by reducing the coercivity and diminishing out-of-plane magnetization.The maximum imaginary permeability of[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer film reaches a large value of 800 at 0.52 GHz even though its overall thickness exceeds 1μm.Besides,the magnetic resonance frequency of the multilayer film can be modulated from 0.52 to 1.35 GHz by adjusting the sputtering power of Fe from 0 to 86 W,and its bandwidth for μ’’>200(Δf) is as large as 2.0 GHz.The desirable broad Δf of magnetic permeability,which can be well fitted by the Landau-Lifshitz-Gilbert equations,is due to dual magnetic resonances originated from double magnetic phases of Fe and FeNi that are of different saturation magnetization.The micron-thick multilayer films with high permeability in extended waveband are promising candidate for electromagnetic noise suppression application.

Study of bias voltage effect on the performance of ta-C coating prepared by high power impulse magnetron sputtering

The mechanical and frictional properties of ta-C coatings deposited on the substrate surface affect applications in the field of cutting tools and wear-resistant components.In this paper,the effect of bias parameters on the performance of ta-C coatings was investigated based on high power impulse magnetron sputtering(HiPIMS)technology.The results show that bias voltage has a significant effect on the deposition rate,structure,and wear resistance of the coating.In the range of bias voltage−50 V to−200 V,the ta-C coating performance was the best under bias voltage−150 V.The thickness reached 530.4 nm,the hardness value reached 35.996 GPa,and the bonding force in-creased to 14.2 N.The maximum sp3 bond content was 59.53% at this condition.

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

The CuZnSn（CZT） precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu_2ZnSnSe_4（CZTSe） absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu^（1＋）, Zn^（2＋）, Sn^（4＋）, Se^（2）.With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV.

Investigation on the properties of high reflective mirror prepared by ion-beam sputtering

The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering （IBS）. When the incident light entered with 45°, the reflectance of p-polarized light at 1064 nm exceeded 99.5%. Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing （STL） technique. Laser-induced damage threshold （LIDT） was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark III-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm^2, which was 5 J/cm^2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.

Facile integration of an Al-rich Al_(1-x)In_(x)N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.

Si基SiC薄膜物理制备工艺研究进展

随着微纳电子器件集成化程度不断提高,用Si基SiC薄膜取代SiC体单晶引起了人们极大的兴趣,这种方法不仅有利于降低生产成本,还能与Si基大规模集成电路兼容。文章综述了磁控溅射、分子束外延、离子束溅射、离子注入4种物理制备Si基SiC薄膜主要工艺的研究进展,简单阐述了各种工艺对薄膜性能的影响,对各种工艺的优缺点和存在的问题进行了评述,同时指明了Si基SiC薄膜领域未来的发展方向。

大口径辅助阳极型辉光放电溅射源的设计与研究

辉光放电原子发射光谱分析技术可对金属样品表面进行沿深度方向的逐层分析与表征,具有溅射速率快、分析效率高、可大面积溅射的优点。另外,辉光放电等离子体能量较低,材料逐层溅射激发过程中不易引起材料本身组织结构的变化,能够实现沿样品深度方向逐层剥蚀制样。将辉光放电溅射源与扫描电镜、光谱分析检测仪器等联用,可作为金属材料高通量定量表征的有效手段。为了高通量地获取材料表面的成分分布信息,需要对材料表面在多尺寸、大面积溅射条件下进行辉光放电等离子体溅射。因此在传统辉光溅射源的基础上,改进了阳极筒结构,设计了4种直径为cm级的(15、20、30和40 mm)大口径阳极筒,并对其进行COMSOL数值模拟仿真和实际溅射效果研究。大尺寸溅射面可获得材料表面更为丰富的信息,但在相同溅射条件下,阳极口径增大也带来溅射速率下降、溅射面中心区域离子化率降低、影响溅射均匀性和坑型平整度等问题。为解决这些问题,设计了可应用于大口径直流辉光放电溅射源的辅助阳极结构,通过改变放电空间的电场分布情况调控等离子体分布,增强了阳极中心区域离子化率。详细阐述了辅助阳极结构的设计原理,并对传统阳极和辅助阳极进行了数值模拟仿真研究和实际溅射效果对比实验。结果表明增设辅助阳极对大口径溅射源溅射速率的提升效果明显,对阳极口径30 mm溅射源的溅射速率提升33%~48%,对阳极口径40 mm溅射源的溅射速率提升34%~57%。采用大口径辅助阳极型溅射源对紫铜样品进行了溅射激发,并用光学相干断层扫描仪(OCT)测试了溅射坑形貌,结果表明增设辅助阳极可有效改善溅射均匀性和坑型平整度。

ITO/AgNWs/ITO薄膜的制备及其性能研究

随着显示面板向超大尺寸、超高清、可触控的方向发展,单一的氧化铟锡(ITO)薄膜难以满足显示器件越来越高的光电性能要求,因此复合导电薄膜得以发展。本文制备了以二维银纳米线(AgNWs)导电网络嵌入ITO薄膜形成的ITO(222)/AgNWs/ITO(400)复合薄膜结构,系统研究了AgNWs添加量和上层ITO薄膜溅射温度对复合薄膜结构与光电性能的影响,AgNWs金属导电网络不仅提升了薄膜的电学性能,还保持了优良的光学性能。结果表明,在旋涂600μL的AgNWs分散液、上层ITO薄膜的溅射温度为175℃时,制备的复合ITO薄膜方阻为7.13Ω/□,在550 nm处透过率为91.52%,且品质因数为57.82×10^(-3)Ω^(-1),实现了超低电阻率和高可见光透过率复合ITO薄膜的制备。

磁控溅射玫瑰金靶材的刻蚀行为

[目的]磁控溅射玫瑰金膜层相比于电镀工艺具有突出的环保优势,但很少有关于磁控溅射靶材刻蚀行为的研究报道。[方法]以Au85玫瑰金制作平面溅射靶材,进行真空磁控溅射镀膜。研究了靶电流、功率密度、磁场布置等对靶材表面刻蚀行为的影响。[结果]靶电流和功率密度较低时辉光稳定,溅射过程平稳;靶材粒子会优先沿着某个晶面逐层溅射出来,形成阶梯状直线条纹;靶材表面形成V形刻蚀沟槽,刻蚀区斜坡与靶面法向夹角为75°~76°。随着靶电流和功率密度的增大,溅射过程偶有弧光放电现象发生,刻蚀区表面形成乳突状显微形貌;靶电流过高时,靶材在短时间内就会出现熔穿。靶座的磁场布置存在端部效应,使刻蚀槽的深度和宽度存在不均匀的现象。[结论]为提高贵金属平面靶的利用率,应改善磁场布置,并将功率密度控制在出现弧光放电的阈值内。

磁控溅射玫瑰金膜层的颜色及抗变色性能

[目的]玫瑰金因其优雅浪漫的颜色而被广泛用于装饰镀膜,但现有玫瑰金镀膜基本采用电镀工艺制备,存在严重的环境污染问题,需要寻求绿色环保的镀膜新工艺。[方法]采用磁控溅射镀膜工艺在316L不锈钢表面沉积Au85玫瑰金膜层。研究了溅射时间、靶电流和基体表面状态对膜层颜色的影响。检测了较佳工艺下所得膜层的抗变色性能。[结果]溅射时间在30 min以内变化时膜层颜色基本不受影响。靶电流从0.5 A增大至1.0 A时,膜层晶粒变粗,亮度下降,色度增大。基体表面状态会影响膜层颜色及不同方向的色差。在靶电流1.0 A下对镜面抛光的316L不锈钢磁控溅射15 min可获得较明亮的红色膜层,该膜层在模拟太阳光照射和人工模拟汗液浸泡试验中都表现出较好的抗变色性能。[结论]磁控溅射Au85玫瑰金镀膜工艺满足绿色环保和工艺饰品表面装饰要求,应用前景良好。

氩气和氪气磁控溅射对Zr-Co-RE薄膜微观结构和吸氢性能的影响

为了获得吸气性能较好的Zr-Co-RE(RE为La和Ce稀土元素)吸气剂薄膜,采用直流磁控溅射方法,分别在氩气和氪气气氛中,通过改变沉积气压研究制备了不同结构的Zr-Co-RE薄膜。运用场发射扫描电镜、X射线衍射仪分析了不同溅射气压下溅射气氛对薄膜结构的影响;采用动态定压法分别测试了在氩气和在氪气中沉积的薄膜的吸氢性能,分析了溅射气氛和薄膜结构对吸氢性能的影响。结果表明,在同等气压下,用氩气溅射沉积的薄膜较致密,用氪气溅射沉积的薄膜表面分布有较多的团簇结构和裂纹结构,薄膜呈明显的柱状结构,且柱状组织间分布着大量的界面和间隙,为气体扩散提供了更多的路径;随着氩气和氪气气压增大,薄膜含有更多的裂纹和间隙结构,连续性柱状结构生长更明显,裂纹更深更宽,比表面积更大,有利于提高薄膜的吸氢性能。

一种双靶磁控溅射制备的Mg掺杂的NiO薄膜

采用磁控溅射“共溅射”方法,将Ar气作为溅射气体,高纯NiO和MgO双陶瓷靶作为溅射靶材。当控制NiO和MgO靶的溅射功率分别为190 W和580 W,溅射真空度为2 Pa,衬底温度为300℃时,得到了Mg掺杂的NiO(Ni_(0.61)Mg_(0.39)O)薄膜。该薄膜是一种具有(200)择优取向的晶态薄膜。薄膜表面比较平整,晶粒分布致密,晶粒尺寸约46.9 nm。(200)衍射峰位置相对未掺杂的NiO薄膜向小角度偏移约0.2°。合金薄膜在可见光波段具有较大的透过率,而在300 nm附近透过率陡然下降,其光学带隙向高能方向移动到了3.95 eV。该研究为采用磁控溅射制备高质量的Mg掺杂的NiO薄膜提供了技术支撑。

五氧化二钒薄膜材料制备方法研究进展

由于V^(5+)的饱和氧化态,五氧化二钒成为钒体系中最稳定的氧化物。作为功能材料,五氧化二钒薄膜在众多科学领域有着巨大的应用潜力,因而受到越来越多的关注。这主要归功于其特殊的层状结构、高能量密度、良好的化学和热稳定性以及优异的光学和电学性能。五氧化二钒薄膜的制备方法很多,采用不同的实验方法在不同衬底上制备的五氧化二钒薄膜因化学成分和组织结构差异而造成其电学、光学性能也存在显著的差异。本文详细阐述了五氧化二钒薄膜现有的制备技术,并对五氧化二钒薄膜材料应用的发展趋势进行了展望,以期为五氧化二钒薄膜产业的发展提供参考。

高深宽比硅孔溅射铜种子层工艺的探索与研究

硅通孔技术(TSV)是当前非常热门的高密度封装技术,但由于常规薄膜沉积技术很难在高深宽比的硅孔内沉积铜、钨等金属种子层,硅通孔技术中存在深硅孔金属化困难的工艺问题。通过对倾斜溅射时铜原子二维非对心碰撞前后入射角度的变化关系进行模拟计算发现,当原子碰撞有能量损失时,入射到硅孔内的铜原子角度会发生改变,有助于其沉积在硅孔深处。本文利用负偏压辅助多个铜靶共焦溅射的方式,在不同深宽比的硅盲孔中沉积铜种子层,验证了该方法的可行性,并通过三靶共焦溅射成功在深宽比8∶1的硅孔内实现了铜种子层的沉积。

用于特殊环境的薄膜应变计的制备与表征

使用磁控溅射制备了卡玛合金薄膜应变计,研究了退火温度对薄膜微观结构的影响,测试了薄膜的电学性能以及压阻响应特性,并进行了环境实验。结果表明,随着退火温度升高,薄膜的电阻率逐渐下降,电阻温度系数则逐渐升高,在室温下有最小的电阻温度系数(TCR),约为59.9×10^(-6)/℃,经过200℃退火处理的薄膜应变计的应变灵敏度系数(GF)为2.2,TCR为64.4×10^(-6)/℃。经历温湿循环、盐雾、霉菌试验后,薄膜的压阻特性变化不大,能耐受海洋特殊环境。

氮含量对Ti-B-C-N薄膜微观结构和性能的影响

采用反应磁控溅射法在高速钢基体上制备氮原子分数分别为10.8%,15.6%,28.1%,36.4%的Ti-B-C-N薄膜,研究了氮含量对薄膜微观结构、硬度和摩擦磨损性能的影响。结果表明:Ti-B-C-N薄膜均由α-Fe和Ti(C,N)纳米晶组成,具有Ti(C,N)纳米晶镶嵌在非晶基体相中的纳米复合结构;随着氮含量增加,非晶相含量增加,Ti(C,N)纳米晶的含量和晶粒尺寸减小;随着氮含量增加,Ti-B-C-N薄膜的显微硬度增大,摩擦因数和磨损率均减小,表面磨痕变浅,磨损机制由剥落和微观犁削转变为微观抛光。